TAOS TPA6130A2

TPA6130A2
YZH
RTJ
www.ti.com
SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
138-mW DIRECTPATH™ STEREO HEADPHONE AMPLIFIER WITH I2C VOLUME CONTROL
•
FEATURES
1
• DirectPath™ Ground-Referenced Outputs
– Eliminates Output DC Blocking Capacitors
– Reduces Board Area
– Reduces Component Height and Cost
– Full Bass Response Without Attenuation
• Power Supply Voltage Range: 2.5 V to 5.5 V
• 64 Step Audio Taper Volume Control
• High Power Supply Rejection Ratio
(>100 dB PSRR)
• Differential Inputs for Maximum Noise
Rejection (68 dB CMRR)
• High-Impedance Outputs When Disabled
• Advanced Pop and Click Suppression
Circuitry
Digital I2C Bus Control
– Per Channel Mute and Enable
– Software Shutdown
– Multi-Mode Support: Stereo HP, Dual Mono
HP, and Single-Channel BTL Operation
– Amplifier Status
Space Saving Packages
– 20 Pin, 4 mm x 4 mm QFN
– 16 ball, 2 mm x 2 mm WCSP
ESD Protection of 8 kV HBM and IEC Contact
2
•
•
APPLICATIONS
•
•
•
•
Mobile Phones
Portable Media Players
Notebook Computers
High Fidelity Applications
DESCRIPTION
The TPA6130A2 is a stereo DirectPath™ headphone amplifier with I2C digital volume control. The TPA6130A2
has minimal quiescent current consumption, with a typical IDD of 4 mA, making it optimal for portable
applications. The I2C control allows maximum flexibility with a 64 step audio taper volume control, channel
independent enables and mutes, and the ability to configure the outputs into stereo, dual mono, or a single
receiver speaker BTL amplifier that drives 300 mW of power into 16 Ω loads.
The TPA6130A2 is a high fidelity amplifier with an SNR of 98 dB. A PSRR greater than 100 dB enables
direct-to-battery connections without compromising the listening experience. The output noise of 9 µVrms (typical
A-weighted) provides a minimal noise background during periods of silence. Configurable differential inputs and
high CMRR allow for maximum noise rejection in the noisy environment of a mobile device.
TPA6130A2 packaging includes a 2 by 2 mm chip-scale package, and a 4 by 4 mm QFN package.
SIMPLIFIED APPLICATION DIAGRAM
2
I C
GPIO
Audio Source
SCL SDA
SD
LEFTINM
Left Out M
HPLEFT
0.47 mF
Left Out P
LEFTINP
0.47 mF
Right Out M
RIGHTINM
TPA6130A2
HPRIGHT
0.47 mF
Right Out P
RIGHTINP
GND
0.47 mF
GND
CPP CPN
CPVSS
1 mF
VDD
1 mF
VDD
1 mF
1 mF
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DirectPath is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2008, Texas Instruments Incorporated
TPA6130A2
www.ti.com
SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
FUNCTIONAL BLOCK DIAGRAM
LEFTINM
Left
HPLEFT
LEFTINP
Gain
Control
De-Pop
RIGHTINM
HPRIGHT
Right
RIGHTINP
Thermal
Current
Limit
Charge
Pump
Power
Management
CPP
CPN
SD
I2C Interface
and Control
SDA
SCL
CPVSS
VDD
GND
VDD
GND
Headphone channels are independently enabled and muted. The I2C interface controls channel gain, device
modes, and charge pump activation. The charge pump generates a negative supply voltage for the output
amplifiers. This allows a 0 V bias at the outputs, eliminating the need for bulky output capacitors. The thermal
block detects faults and shuts down the device before damage occurs. The I2C register records thermal fault
conditions. The current limit block prevents the output current from getting high enough to damage the device.
The De-Pop block eliminates audible pops during power-up, power-down, and amplifier enable and disable
events.
2
Copyright © 2006–2008, Texas Instruments Incorporated
Product Folder Link(s): TPA6130A2
TPA6130A2
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A3
A2
A1
CPN
CPP
GND
VDD
VDD
GND
CPP
CPN
B1
B2
B3
B4
B4
B3
B2
B1
HPLEFT
CPVSS
LEFTINP
LEFTINM
LEFTINM
LEFTINP
CPVSS
HPLEFT
C1
C2
C3
C4
C4
C3
C2
C1
VDD
GND
GND
VDD
D1
D2
D3
D4
D4
D3
D2
D1
HPRIGHT
SCL
SDA
SD
SD
SDA
SCL
HPRIGHT
RIGHTINP RIGHTINM
RIGHTINM RIGHTINP
Top (Symbol Side) View WCSP Package (YZH)
GND
CPP
CPN
CPVSS
20
19
18
17
16
LEFTINM
1
15
CPVSS
LEFTINP
2
14
HPLEFT
GND
3
13
GND
RIGHTINP
4
12
VDD
RIGHTINM
5
11
HPRIGHT
T op View
6
7
8
9
10
GND
A4
GND
A4
SCL
A3
SDA
A2
SD
A1
VDD
SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
Bottom (Ball Side) View WCSP Package (YZH)
Top View QFN Package (RTJ)
TERMINAL FUNCTIONS
TERMINAL
INPUT/
OUTPUT/
POWER
(I/O/P)
DESCRIPTION
BALL
WCSP
PIN QFN
VDD
A4
20
P
Charge pump voltage supply. VDD must be connected to the common VDD voltage
supply. Decouple to GND (pin 19 on the QFN) with its own 1 µF capacitor.
GND
A3
19
P
Charge pump ground. GND must be connected to common supply GND. It is
recommended that this pin be decoupled to the VDD of the charge pump pin (pin 20 on
the QFN).
CPP
A2
18
P
Charge pump flying capacitor positive terminal. Connect one side of the flying capacitor
to CPP.
CPN
A1
17
P
Charge pump flying capacitor negative terminal. Connect one side of the flying capacitor
to CPN.
LEFTINM
B4
1
I
Left channel negative differential input. Impedance must be matched to LEFTINP.
Connect the left input to LEFTINM when using single-ended inputs.
LEFTINP
B3
2
I
Left channel positive differential input. Impedance must be matched to LEFTINM. AC
ground LEFTINP near signal source while maintaining matched impedance to LEFTINM
when using single-ended inputs.
CPVSS
B2
15, 16
P
Negative supply generated by the charge pump. Decouple to pin 19 on the QFN or a
GND plane. Use a 1 µF capacitor.
HPLEFT
B1
14
O
Headphone left channel output. Connect to left terminal of headphone jack.
RIGHTINM
C4
5
I
Right channel negative differential input. Impedance must be matched to RIGHTINP.
Connect the right input to RIGHTINM when using single-ended inputs.
RIGHTINP
C3
4
I
Right channel positive differential input. Impedance must be matched to RIGHTINM. AC
ground RIGHTINP near signal source while maintaining matched impedance to
RIGHTINM when using single-ended inputs.
GND
C2
3, 9, 10,
13
P
Analog ground. Must be connected to common supply GND. It is recommended that this
pin be used to decouple VDD for analog. Use pin 13 to decouple pin 12 on the QFN
package.
VDD
C1
12
P
Analog VDD. VDD must be connected to common VDD supply. Decouple with its own 1-µF
capacitor to analog ground (pin 13 on the QFN).
SD
D4
6
I
Shutdown. Active low logic. 5V tolerant input.
SDA
D3
7
I/O
SDA - I2C Data. 5V tolerant input.
SCL
D2
8
I
SCL - I2C Clock. 5V tolerant input.
HPRIGHT
D1
11
O
Headphone light channel output. Connect to the right terminal of the headphone jack.
Thermal
pad
N/A
Die Pad
P
Solder the thermal pad on the bottom of the QFN package to the GND plane of the PCB.
It is required for mechanical stability and will enhance thermal performance.
NAME
3
Copyright © 2006–2008, Texas Instruments Incorporated
Product Folder Link(s): TPA6130A2
TPA6130A2
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SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range, TA = 25°C (unless otherwise noted)
VALUE / UNIT
Supply voltage, VDD
VI
–0.3 V to 6.0 V
RIGHTINx, LEFTINx
Input voltage
–2.7 V to 3.6 V
SD, SCL, SDA
–0.3 V to 7 V
Output continuous total power dissipation
See Dissipation Rating Table
TA
Operating free-air temperature range
–40°C to 85°C
TJ
Operating junction temperature range
–40°C to 125°C
Tstg
Storage temperature range
–65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260°C
HBM Output Pins
ESD Protection
8 kV
HBM All Other Pins
IEC Contact ESD Protection (2)
3.5 kV
No External Protection
8 kV
V14MLA0603 Varistors Used for External Protection
15 kV
12.8 Ω
Minimum Load Impedance
(1)
(2)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Tested to IEC 61000-4-2 standards on a TPA6130A2 EVM.
DISSIPATION RATINGS TABLE
(1)
(2)
PACKAGE
TA ≤ 25°C
POWER RATING
RTJ
YZH
DERATING
FACTOR (1) (2)
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
4100 mW
41 mW/°C
2250 mW
1640 mW
970 mW
9.7 mW/°C
530 mW
390 mW
Derating factor measured with JEDEC High K board: 1S2P - One signal layer and two plane layers.
See JEDEC Standard 51-3 for Low-K board, JEDEC Standard 51-7 for High-K board, and JEDEC
Standard 51-12 for using package thermal information. Please see JEDEC document page for
downloadable copies: http://www.jedec.org/download/default.cfm.
AVAILABLE OPTIONS
TA
–40°C to 85°C
(1)
(2)
PACKAGED DEVICES (1)
PART NUMBER
SYMBOL
20-pin, 4 mm × 4 mm QFN
TPA6130A2RTJ (2)
BSG
16-ball, 1,98 mm × 1.98 mm
(+0,01mm, –0,09 mm)
TPA6130A2YZH
BRU
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
The RTJ package is only available taped and reeled. To order, add the suffix “R” to the end of the part number for a reel of 3000, or add
the suffix “T” to the end of the part number for a reel of 250 (e.g., TPA6130A2RTJR).
RECOMMENDED OPERATING CONDITIONS
Supply voltage, VDD
VIH
High-level input voltage
SCL, SDA, SD
MIN
MAX
2.5
5.5
1.3
SCL, SDA
VIL
Low-level input voltage
TA
Operating free-air temperature
–40
4
V
V
0.6
SD
UNIT
V
0.35
V
85
°C
Copyright © 2006–2008, Texas Instruments Incorporated
Product Folder Link(s): TPA6130A2
TPA6130A2
www.ti.com
SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
ELECTRICAL CHARACTERISTICS
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
|VOS|
Output offset voltage
VDD = 2.5 V to 5.5 V, inputs grounded
150
400
µV
PSRR
Power supply rejection ratio
VDD = 2.5 V to 5.5 V, inputs grounded
–109
–90
dB
CMRR
Common mode rejection ratio
VDD = 2.5 V to 5.5 V
|IIH|
High-level input current
VDD = 5.5 V, VI = VDD
|IIL|
Low-level input current
VDD = 5.5 V, VI = 0 V
–68
1
SD
10
SCL, SDA, SD
Supply current
µA
1
µA
4
6
mA
Shutdown mode, VDD = 2.5V to 5.5 V, SD = 0 V
0.4
1
µA
SW Shutdown mode, VDD = 2.5V to 5.5 V, SWS = 1
25
75
µA
Both HP amps disabled, VDD = 2.5V to 5.5 V,
SWS = 0, Charge Pump enabled, SD = VDD
1.4
2.5
mA
VDD = 2.5 V to 5.5 V, SD = VDD
IDD
dB
SCL, SDA
TIMING CHARACTERISTICS (1) (2)
For I2C Interface Signals Over Recommended Operating Conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
400
kHz
Frequency, SCL
tw(H)
Pulse duration, SCL high
0.6
µs
tw(L)
Pulse duration, SCL low
1.3
µs
tsu1
Setup time, SDA to SCL
300
ns
th1
Hold time, SCL to SDA
10
ns
t(buf)
Bus free time between stop and start condition
1.3
µs
tsu2
Setup time, SCL to start condition
0.6
µs
th2
Hold time, start condition to SCL
0.6
µs
tsu3
Setup time, SCL to stop condition
0.6
µs
(1)
(2)
No wait states
TYP
fSCL
VPull-up = VDD
A pull-up resistor ≤2 kΩ is required for a 5 V I2C bus voltage.
tw(L)
tw(H)
SCL
t su1
th1
SDA
Figure 1. SCL and SDA Timing
5
Copyright © 2006–2008, Texas Instruments Incorporated
Product Folder Link(s): TPA6130A2
TPA6130A2
www.ti.com
SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
SCL
th2
t(buf)
tsu2
tsu3
Start Condition
Stop Condition
SDA
Figure 2. Start and Stop Conditions Timing
OPERATING CHARACTERISTICS
VDD = 3.6 V , TA = 25°C, RL = 16 Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Stereo, Outputs out of phase,
THD = 1%, f = 1 kHz, Gain = 0.1 dB
PO
Output power
Bridge-tied load,
THD = 1%, f = 1 kHz, Gain = 0.1 dB
MIN
60
VDD = 3.6V
127
VDD = 5V
138
VDD = 2.5V
110
VDD = 3.6V
230
VDD = 5V
THD+N
kSVR
ΔAv
Total harmonic distortion
plus noise
Supply ripple rejection ratio
PO = 35 mW
0.0029%
f = 1 kHz
0.0055%
f = 20 kHz
0.0027%
200 mVpp ripple, f = 217 Hz
-97
200 mVpp ripple, f = 1 kHz
-93
200 mVpp ripple, f = 20 kHz
-76
fosc
Charge pump switching
frequency
See Figure 33
Signal-to-noise ratio
Po = 35 mW
ZO
Tri-state HP output
impedance
CO
Output capacitance
-90
dB
V/µs
9
300
Differential input impedance
Thermal shutdown
mW
0.3
VDD = 3.6V, A-weighted, Gain = 0.1 dB
Start-up time from shutdown
SNR
UNIT
1%
Slew rate
Noise output voltage
MAX
290
f = 100 Hz
Gain matching
Vn
TYP
VDD = 2.5V
400
µVRMS
500
kHz
5
ms
98
dB
Threshold
180
°C
Hysteresis
35
°C
HiZ left and right bits set. HP amps disabled. DC value.
25
MΩ
80
pF
6
Copyright © 2006–2008, Texas Instruments Incorporated
Product Folder Link(s): TPA6130A2
TPA6130A2
www.ti.com
SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
TYPICAL CHARACTERISTICS
C(PUMP, DECOUPLE, ,BYPASS, CPVSS) = 1 µF, CI = 2.2µF.
All THD + N graphs taken with outputs out of phase (unless otherwise noted).
Table of Graphs
FIGURE
Total harmonic distortion + noise
vs Output power
3–8
Total harmonic distortion + noise
vs Frequency
9–22
Supply voltage rejection ratio
vs Frequency
23-25
Common mode rejection ratio
vs Frequency
26-27
Output power
vs Load
28-29
Output voltage
vs Load
30-31
Power Dissipation
vs Output power
32
Differential Input Impedance
vs Gain
33
Shutdown time
34
Startup time
35
RL = 16 W,
1
Gain = 0.1 dB,
VDD = 3.6 V,
fIN = 1 kHz,
Stereo
0.1
In Phase
Out of Phase
0.01
0.001
100m
1m
10m
100m
1
10
RL = 32 W,
Gain = 0.1 dB,
VDD = 3.6 V,
1
fIN = 1 kHz,
Stereo
0.1
0.01
PO - Output Power - W
1m
10m
100m
PO - Output Power - W
1
10
RL = 16 W,
1
Gain = 0.1 dB,
fIN = 1 kHz,
Stereo
VDD = 2.5 V
VDD = 3 V
0.1
VDD = 3.6 V
0.01
VDD = 5 V
0.001
100m
1m
10m
100m
1
PO - Output Power - W
Figure 4.
Figure 5.
TOTAL HARMONIC DISTORTION +
NOISE
vs
OUTPUT POWER
TOTAL HARMONIC DISTORTION +
NOISE
vs
OUTPUT POWER
TOTAL HARMONIC DISTORTION +
NOISE
vs
OUTPUT POWER
10
RL = 32 W,
Gain = 0.1 dB,
fIN = 1 kHz,
1
Stereo
VDD = 2.5 V
0.1
VDD = 5 V
0.01
VDD = 3.6 V
0.001
100m
VDD = 3 V
1m
10m
100m
1
10
RL = 16 W,
Gain = 6.1 dB,
fIN = 1 kHz,
1
BTL
VDD = 2.5 V
VDD = 3 V
0.1
VDD = 3.6 V
VDD = 5 V
0.01
0.001
100m
1m
10m
100m
1 2
THD+N - Total Harmonic Distortion + Noise - %
Figure 3.
THD+N - Total Harmonic Distortion + Noise - %
THD+N - Total Harmonic Distortion + Noise - %
In Phase
Out of Phase
0.001
100m
TOTAL HARMONIC DISTORTION +
NOISE
vs
OUTPUT POWER
THD+N - Total Harmonic Distortion + Noise - %
10
TOTAL HARMONIC DISTORTION +
NOISE
vs
OUTPUT POWER
THD+N - Total Harmonic Distortion + Noise - %
THD+N - Total Harmonic Distortion + Noise - %
TOTAL HARMONIC DISTORTION +
NOISE
vs
OUTPUT POWER
10
RL = 32 W,
VDD = 5 V
Gain = 6.1 dB,
fIN = 1 kHz,
1
BTL
VDD = 3.6 V
VDD = 2.5 V
0.1
VDD = 3 V
0.01
0.001
100m
1m
10m
100m
PO - Output Power - W
PO - Output Power - W
PO - Output Power - W
Figure 6.
Figure 7.
Figure 8.
1 2
7
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TPA6130A2
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SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
RL = 16 W,
VDD = 2.5 V,
Gain = 0.1 dB,
Stereo
0.1
PO = 20 mW
PO = 1 mW
0.01
PO = 4 mW
0.001
20
100
1k
10k 20k
100
RL = 16 W,
VDD = 3 V,
10
Gain = 0.1 dB,
Stereo
1
PO = 40 mW
PO = 20 mW
0.1
PO = 5 mW
0.01
0.001
20
100
RL = 16 W,
VDD = 3.6 V,
Gain = 0.1 dB,
Stereo
0.1
PO = 70 mW
PO = 35 mW
0.01
PO = 5 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
Figure 11.
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
1
RL = 16 W,
VDD = 5 V,
Gain = 0.1 dB,
Stereo
0.1
PO = 50 mW
PO = 80 mW
0.01
PO = 5 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
1
RL = 32 W,
VDD = 2.5 V,
Gain = 0.1 dB,
Stereo
0.1
PO = 20 mW
PO = 1 mW
0.01
PO = 4 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
THD+N - Total Harmonic Distortion + Noise - %
Figure 10.
THD+N - Total Harmonic Distortion + Noise - %
Figure 9.
1
RL = 32 W,
VDD = 3 V,
Gain = 0.1 dB,
Stereo
0.1
PO = 20 mW
PO = 40 mW
0.01
PO = 5 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
Figure 13.
Figure 14.
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
1
RL = 32 W,
VDD = 3.6 V,
Gain = 0.1 dB,
Stereo
PO = 35 mW
0.1
PO = 70 mW
0.01
PO = 5 mW
0.001
20
100
1k
f - Frequency - Hz
Figure 15.
10k 20k
1
RL = 32 W,
VDD = 5 V,
Gain = 0.1 dB,
Stereo
0.1
PO = 50 mW
PO = 70 mW
0.01
PO = 5 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
Figure 16.
8
THD+N - Total Harmonic Distortion + Noise - %
Figure 12.
THD+N - Total Harmonic Distortion + Noise - %
THD+N - Total Harmonic Distortion + Noise - %
10k 20k
1
f - Frequency - Hz
f - Frequency - Hz
THD+N - Total Harmonic Distortion + Noise - %
1k
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
THD+N - Total Harmonic Distortion + Noise - %
1
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
THD+N - Total Harmonic Distortion + Noise - %
THD+N - Total Harmonic Distortion + Noise - %
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
1
RL = 16 W,
VDD = 2.5 V,
Gain = 6.1 dB,
BTL
0.1
PO = 100 mW
PO = 5 mW
0.01
PO = 25 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
Figure 17.
Copyright © 2006–2008, Texas Instruments Incorporated
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SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
VDD = 3.6 V,
Gain = 6.1 dB,
BTL
0.1
PO = 200 mW
PO = 25 mW
0.01
0.001
20
PO = 100 mW
100
1k
f - Frequency - Hz
10k 20k
1
RL = 16 W,
VDD = 5 V,
Gain = 6.1 dB,
BTL
0.1
PO = 200 mW
PO = 100 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
1
RL = 32 W,
VDD = 2.5 V,
Gain = 6.1 dB,
BTL
0.1
PO = 100 mW
PO = 5 mW
0.01
PO = 25 mW
0.001
20
100
1k
f - Frequency - Hz
10k 20k
Figure 18.
Figure 19.
Figure 20.
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
SUPPLY VOLTAGE REJECTION
RATIO
vs
FREQUENCY
RL = 32 W,
VDD = 3.6 V,
Gain = 6.1 dB,
BTL
0.1
PO = 200 mW
PO = 25 mW
0.01
0.001
20
PO = 100 mW
100
1k
f - Frequency - Hz
10k 20k
1
0
RL = 32 W,
VDD = 5 V,
Gain = 6.1 dB,
BTL
0.1
PO = 200 mW
PO = 25 mW
0.01
0.001
20
PO = 100 mW
100
1k
f - Frequency - Hz
kSVR - Supply Voltage Rejection Ratio - V
1
RL = 16 W,
-20
-40
-60
VDD = 3.6 V
VDD = 2.5 V
-80
-100
-120
20
10k 20k
Gain = 0.1 dB,
Cp = 1 mF,
Stereo
VDD = 5 V
100
1k
10k 20k
f - Frequency - Hz
Figure 21.
Figure 22.
Figure 23.
SUPPLY VOLTAGE REJECTION
RATIO
vs
FREQUENCY
SUPPLY VOLTAGE REJECTION
RATIO
vs
FREQUENCY
COMMON MODE REJECTION RATIO
vs
FREQUENCY
-20
Gain = 0.1 dB,
Cp = 1 mF,
Stereo
-40
VDD = 3.6 V
-60
VDD = 2.5 V
-80
-100
-120
20
VDD = 5 V
100
1k
10k 20k
f - Frequency - Hz
Figure 24.
CMRR - Common-Mode Rejection Ratio - dB
0
RL = 32 W,
kSVR - Supply Voltage Rejection Ratio - V
0
kSVR - Supply Voltage Rejection Ratio - V
PO = 25 mW
0.01
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
THD+N - Total Harmonic Distortion + Noise - %
RL = 16 W,
THD+N - Total Harmonic Distortion + Noise - %
1
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
THD+N - Total Harmonic Distortion + Noise - %
THD+N - Total Harmonic Distortion + Noise - %
THD+N - Total Harmonic Distortion + Noise - %
TOTAL HARMONIC DISTORTION +
NOISE
vs
FREQUENCY
RL = 16 W,
-20
Gain = 6.1 dB,
Cp = 1 mF,
BTL
-40
-60
-80
VDD = 2.5 V
VDD = 3.6 V
-100
-120
20
VDD = 5 V
100
1k
10k 20k
f - Frequency - Hz
Figure 25.
0
-10
-20
RL = 16 W,
Gain = 0.1 dB,
CI = 2.2 mF,
Stereo
-30
-40
-50
-60
VDD = 2.5 V
VDD = 3.6 V
-70
-80
20
VDD = 5 V
100
1k
10k 20k
f - Frequency - Hz
Figure 26.
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OUTPUT POWER
vs
LOAD
0
OUTPUT POWER
vs
LOAD
250
500
RL = 16 W,
Gain = 6.1 dB,
CI = 2.2 mF,
-20
200
BTL
-30
-40
-50
VDD = 2.5 V
-60
fIN = 1 kHz,
Gain = 0.1 dB,
THD+N = 1%,
Stereo
VDD = 5 V
VDD = 3.6 V
400
PO - Output Power - mW
-10
PO - Output Power - mW
CMRR - Common-Mode Rejection Ratio - dB
COMMON MODE REJECTION RATIO
vs
FREQUENCY
150
100
VDD = 3.6 V
50
-70
-80
20
100
1k
300
200
VDD = 3.6 V
100
VDD = 2.5 V
VDD = 2.5 V
VDD = 5 V
0
10
10k 20k
0
10
1k
100
f - Frequency - Hz
Load - W
Figure 27.
Figure 28.
Figure 29.
OUTPUT VOLTAGE
vs
LOAD
OUTPUT VOLTAGE
vs
LOAD
POWER DISSIPATION
vs
OUTPUT POWER
6
1
13
RL = 16 W,
4.5
4
VDD = 2.5 V
3
VDD = 3.6 V
THD + N = 1%
Gain = 0.1 dB,
fIN = 1 kHz,
2
VDD = 5 V
9
7
VDD = 3.6 V
5
VDD = 2.5 V
THD + N = 1%
Gain = 6.1 dB,
fIN = 1 kHz,
3
Stereo
1.5
PD - Power Dissipation - W
11
5
VO - Output Voltage - VPP
VO - Output Voltage - VPP
VDD = 5 V
2.5
Gain = 0.1 dB,
Stereo
0.8
VDD = 5 V
0.6
0.4
VDD = 3.6 V
0.2
VDD = 2.5 V
BTL
1
10
1k
100
Load - W
5.5
3.5
fIN = 1 kHz,
Gain = 6.1 dB,
THD+N = 1%,
BTL
VDD = 5 V
100
1
10
1000
0
100
Load - W
Load - W
Figure 30.
1000
0
50
100 150 200 250 300 350
400
PO - Output Power - mW
Figure 31.
Figure 32.
DIFFERENTIAL INPUT IMPEDANCE
vs
GAIN
Differential Input Impedance - kW
100
90
80
70
60
50
40
VDD = 3.6 V
30
-60
-50
-40
-30
-20
-10
0
10
Gain - dB
Figure 33.
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1
Output
SWS
Disable
0.75
Voltage - V
0.5
0.25
0
-0.25
-0.5
-0.75
-1
0
200m
400m
600m
800m
1m
1.2m
1.4m
1.6m
1.8m
2m
7m
8m
9m
10m
t - Time - s
Figure 34. Shutdown Time
1
Output
0.75
SWS Enable
Voltage - V
0.5
0.25
0
-0.25
-0.5
-0.75
-1
0
1m
2m
3m
4m
5m
6m
t - Time - s
Figure 35. Startup Time
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APPLICATION INFORMATION
SIMPLIFIED APPLICATIONS CIRCUIT
VDD
CPM
CPP
VDD
20
19
CPVSS
1 mF
GND
1 mF
18
17
16
LEFTINM
0.47 mF
1
15
2
14
LEFTINP
0.47 mF
1 mF
GND
13
TPA6130A2
3
CPVSS
HPLEFT
GND
VDD
5
11
SD
SD
8
9
HPRIGHT
1 mF
10
GND
7
GND
6
SCL
0.47 mF
VDD
SCL
RIGHTINM
12
SDA
0.47 mF
4
SDA
RIGHTINP
Headphone Amplifiers
Single-supply headphone amplifiers typically require dc-blocking capacitors. The capacitors are required because
most headphone amplifiers have a dc bias on the outputs pin. If the dc bias is not removed, the output signal is
severely clipped, and large amounts of dc current rush through the headphones, potentially damaging them. The
top drawing in Figure 36 illustrates the conventional headphone amplifier connection to the headphone jack and
output signal.
DC blocking capacitors are often large in value. The headphone speakers (typical resistive values of 16 Ω or 32
Ω) combine with the dc blocking capacitors to form a high-pass filter. Equation 1 shows the relationship between
the load impedance (RL), the capacitor (CO), and the cutoff frequency (fC).
1
fc +
2pRLC O
(1)
CO can be determined using Equation 2, where the load impedance and the cutoff frequency are known.
1
CO +
2pRLf c
(2)
If fc is low, the capacitor must then have a large value because the load resistance is small. Large capacitance
values require large package sizes. Large package sizes consume PCB area, stand high above the PCB,
increase cost of assembly, and can reduce the fidelity of the audio output signal.
Two different headphone amplifier applications are available that allow for the removal of the output dc blocking
capacitors. The Capless amplifier architecture is implemented in the same manner as the conventional amplifier
with the exception of the headphone jack shield pin. This amplifier provides a reference voltage, which is
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connected to the headphone jack shield pin. This is the voltage on which the audio output signals are centered.
This voltage reference is half of the amplifier power supply to allow symmetrical swing of the output voltages. Do
not connect the shield to any GND reference or large currents will result. The scenario can happen if, for
example, an accessory other than a floating GND headphone is plugged into the headphone connector. See the
second block diagram and waveform in Figure 36.
Conventional
VDD
CO
VOUT
CO
VDD/2
GND
Capless
VDD
VOUT
VBIAS
GND
VBIAS
DirectPathTM
VDD
GND
VSS
Figure 36. Amplifier Applications
The DirectPath™ amplifier architecture operates from a single supply but makes use of an internal charge pump
to provide a negative voltage rail. Combining the user provided positive rail and the negative rail generated by
the IC, the device operates in what is effectively a split supply mode. The output voltages are now centered at
zero volts with the capability to swing to the positive rail or negative rail. The DirectPath™ amplifier requires no
output dc blocking capacitors, and does not place any voltage on the sleeve. The bottom block diagram and
waveform of Figure 36 illustrate the ground-referenced headphone architecture. This is the architecture of the
TPA6130A2.
Input-Blocking Capacitors
DC input-blocking capacitors block the dc portion of the audio source, and allow the inputs to properly bias.
Maximum performance is achieved when the inputs of the TPA6130A2 are properly biased. Performance issues
such as pop are optimized with proper input capacitors.
The dc input-blocking capacitors may be removed provided the inputs are connected differentially and within the
input common mode range of the amplifier, the audio signal does not exceed ±3 V, and pop performance is
sufficient.
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CIN is a theoretical capacitor used for mathematical calculations only. Its value is the series combination of the dc
input-blocking capacitors, C(DCINPUT-BLOCKING). Use Equation 3 to determine the value of C(DCINPUT-BLOCKING). For
example, if CIN is equal to 0.22 µF, then C(DCINPUT-BLOCKING) is equal to about 0.47 µF.
1 C
CIN =
(DCINPUT-BLOCKING)
2
(3)
The two C(DCINPUT-BLOCKING) capacitors form a high-pass filter with the input impedance of the TPA6130A2. Use
Equation 3 to calculate CIN, then calculate the cutoff frequency using CIN and the differential input impedance of
the TPA6130A2, RIN, using Equation 4. Note that the differential input impedance changes with gain. See
Figure 33 for input impedance values. The frequency and/or capacitance can be determined when one of the two
values are given.
1
1
fc IN +
or C IN + 2p fc R
2p RIN C IN
IN IN
(4)
If a high pass filter with a -3 dB point of no more than 20 Hz is desired over all gain settings, the minimum
impedance would be used in the above equation. Figure 33 shows this to be 37 kΩ. The capacitor value by the
above equation would be 0.215 µF. However, this is CIN, and the desired value is for C(DCINPUT-BLOCKING).
Multiplying CIN by 2 yields 0.43 µF, which is close to the standard capacitor value of 0.47 µF. Place 0.47 µF
capacitors at each input terminal of the TPA6130A2 to complete the filter.
Charge Pump Flying Capacitor and CPVSS Capacitor
The charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage.
The CPVSS capacitor must be at least equal to the flying capacitor in order to allow maximum charge transfer.
Low ESR capacitors are an ideal selection, and a value of 1 µF is typical.
Decoupling Capacitors
The TPA6130A2 is a DirectPath™ headphone amplifier that requires adequate power supply decoupling to
ensure that the noise and total harmonic distortion (THD) are low. Use good low equivalent-series-resistance
(ESR) ceramic capacitors, typically 1.0 µF. Find the smallest package possible, and place as close as possible to
the device VDD lead. Placing the decoupling capacitors close to the TPA6130A2 is important for the performance
of the amplifier. Use a 10 µF or greater capacitor near the TPA6130A2 to filter lower frequency noise signals.
The high PSRR of the TPA6130A2 will make the 10 µF capacitor unnecessary in most applications.
Layout Recommendations
Exposed Pad On TPA6130A2RTJ Package Option
Solder the exposed metal pad on the TPA6130A2RTJ QFN package to the a pad on the PCB. The pad on the
PCB may be grounded or may be allowed to float (not be connected to ground or power). If the pad is grounded,
it must be connected to the same ground as the GND pins (3, 9, 10, 13, and 19). See the layout and mechanical
drawings at the end of the datasheet for proper sizing. Soldering the thermal pad improves mechanical reliability,
improves grounding of the device, and enhances thermal conductivity of the package.
GND Connections
The GND pin for charge pump should be decoupled to the charge pump VDD pin, and the GND pin adjacent to
the Analog VDD pin should be separately decoupled to each other.
I2C CONTROL INTERFACE DETAILS
Addressing the TPA6130A2
The device operates only as a slave device whose address is 1100000 binary.
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GENERAL I2C OPERATION
The I2C bus employs two signals; SDA (data) and SCL (clock), to communicate between integrated circuits in a
system. Data is transferred on the bus serially, one bit at a time. The address and data are transferred in byte
(8-bit) format with the most-significant bit (MSB) transferred first. In addition, each byte transferred on the bus is
acknowledged by the receiving device with an acknowledge bit. Each transfer operation begins with the master
device driving a start condition on the bus and ends with the master device driving a stop condition on the bus.
The bus uses transitions on the data terminal (SDA) while the clock is high to indicate start and stop conditions.
A high-to-low transition on SDA indicates a start and a low-to-high transition indicates a stop. Normal data-bit
transitions must occur within the low time of the clock period. These conditions are shown in Figure 37. The
master generates the 7-bit slave address and the read/write (R/W) bit to open communication with another
device and then wait for an acknowledge condition. The TPA6130A2 holds SDA low during acknowledge clock
period to indicate an acknowledgment. When this occurs, the master transmits the next byte of the sequence.
Each device is addressed by a unique 7-bit slave address plus R/W bit (1 byte). All compatible devices share the
same signals via a bidirectional bus using a wired-AND connection.
An external pull-up resistor must be used for the SDA and SCL signals to set the HIGH level for the bus. When
the bus level is 5 V, pull-up resistors between 1 kΩ and 2 kΩ in value must be used.
8- Bit Data for
Register (N)
8- Bit Data for
Register (N+1)
Figure 37. Typical I2C Sequence
There is no limit on the number of bytes that can be transmitted between start and stop conditions. When the last
word transfers, the master generates a stop condition to release the bus. A generic data transfer sequence is
shown in Figure 37.
SINGLE-AND MULTIPLE-BYTE TRANSFERS
The serial control interface supports both single-byte and multi-byte read/write operations for all registers.
During multiple-byte read operations, the TPA6130A2 responds with data, a byte at a time, starting at the register
assigned, as long as the master device continues to respond with acknowledges.
The TPA6130A2 supports sequential I2C addressing. For write transactions, if a register is issued followed by
data for that register and all the remaining registers that follow, a sequential I2C write transaction has taken
place. For I2C sequential write transactions, the register issued then serves as the starting point, and the amount
of data subsequently transmitted, before a stop or start is transmitted, determines to how many registers are
written.
SINGLE-BYTE WRITE
As shown in Figure 38, a single-byte data write transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. The read/write bit determines the direction of
the data transfer. For a write data transfer, the read/write bit must be set to 0. After receiving the correct I2C
device address and the read/write bit, the TPA6130A2 responds with an acknowledge bit. Next, the master
transmits the register byte corresponding to the TPA6130A2 internal memory address being accessed. After
receiving the register byte, the TPA6130A2 again responds with an acknowledge bit. Next, the master device
transmits the data byte to be written to the memory address being accessed. After receiving the data byte, the
TPA6130A2 again responds with an acknowledge bit. Finally, the master device transmits a stop condition to
complete the single-byte data write transfer.
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Start
Condition
Acknowledge
A6
A5
A4
A3
A2
A1
A0
Acknowledge
R/W ACK A7
A6
A5
I2C Device Address and
Read/Write Bit
A4
A3
A2
A1
Acknowledge
A0 ACK D7
D6
D5
Register
D4
D3
D2
D1
D0 ACK
Stop
Condition
Data Byte
Figure 38. Single-Byte Write Transfer
MULTIPLE-BYTE WRITE AND INCREMENTAL MULTIPLE-BYTE WRITE
A multiple-byte data write transfer is identical to a single-byte data write transfer except that multiple data bytes
are transmitted by the master device to the TPA6130A2 as shown in Figure 39. After receiving each data byte,
the TPA6130A2 responds with an acknowledge bit.
Register
Figure 39. Multiple-Byte Write Transfer
SINGLE-BYTE READ
As shown in Figure 40, a single-byte data read transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. For the data read transfer, both a write
followed by a read are actually done. Initially, a write is done to transfer the address byte of the internal memory
address to be read. As a result, the read/write bit is set to a 0.
After receiving the TPA6130A2 address and the read/write bit, the TPA6130A2 responds with an acknowledge
bit. The master then sends the internal memory address byte, after which the TPA6130A2 issues an
acknowledge bit. The master device transmits another start condition followed by the TPA6130A2 address and
the read/write bit again. This time the read/write bit is set to 1, indicating a read transfer. Next, the TPA6130A2
transmits the data byte from the memory address being read. After receiving the data byte, the master device
transmits a not-acknowledge followed by a stop condition to complete the single-byte data read transfer.
Repeat Start
Condition
Start
Condition
Acknowledge
A6
A5
A1
A0 R/W ACK A7
I2C Device Address and
Read/Write Bit
Acknowledge
A6
A5
A4
Register
A0 ACK
Not
Acknowledge
Acknowledge
A6
A5
A1
A0 R/W ACK D7
I2C Device Address and
Read/Write Bit
D6
D1
Data Byte
D0 ACK
Stop
Condition
Figure 40. Single-Byte Read Transfer
MULTIPLE-BYTE READ
A multiple-byte data read transfer is identical to a single-byte data read transfer except that multiple data bytes
are transmitted by the TPA6130A2 to the master device as shown in Figure 41. With the exception of the last
data byte, the master device responds with an acknowledge bit after receiving each data byte.
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Repeat Start
Condition
Start
Condition
Acknowledge
A6
A0 R/W ACK A7
Acknowledge
A6
I2C Device Address and
Read/Write Bit
A5
A0 ACK
Acknowledge
A6
A0 R/W ACK D7
I2C Device Address and
Read/Write Bit
Register
Acknowledge
D0
ACK D7
First Data Byte
Acknowledge
Not
Acknowledge
D0 ACK D7
D0 ACK
Stop
Condition
Last Data Byte
Other Data Bytes
Figure 41. Multiple-Byte Read Transfer
Register Map
Table 1. Register Map
Register
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
1
HP_EN_L
HP_EN_R
Mode[1]
Mode[0]
Reserved
Reserved
Thermal
SWS
2
Mute_L
Mute_R
Volume[5]
Volume[4]
Volume[3]
Volume[2]
Volume[1]
Volume[0]
3
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
HiZ_L
HiZ_R
4
Reserved
Reserved
RFT
RFT
Version[3]
Version[2]
Version[1]
Version[0]
5
RFT
RFT
RFT
RFT
RFT
RFT
RFT
RFT
6
RFT
RFT
RFT
RFT
RFT
RFT
RFT
RFT
7
RFT
RFT
RFT
RFT
RFT
RFT
RFT
RFT
8
RFT
RFT
RFT
RFT
RFT
RFT
RFT
RFT
Bits labeled "Reserved" are reserved for future enhancements. They may not be written to. When read, they will
show a "0" value.
Bits labeled "RFT" are reserved for TI testing. Under no circumstances must any data be written to these
registers. Writing to these bits may change the function of the device, or cause complete failure. If read, these
bits may assume any value.
Control Register (Address: 1)
BIT
7
6
5
4
3
2
1
0
Function
HP_EN_L
HP_EN_R
Mode[1]
Mode[0]
Reserved
Reserved
Thermal
SWS
Reset Value
0
0
0
0
0
0
0
0
HP_EN_L
Enable bit for the left-channel amplifier. Amplifier is active when bit is high.
HP_EN_R
Enable bit for the right-channel amplifier. Amplifier is active when bit is high.
Mode[1:0]
Mode bits Mode[1] and Mode[0] select one of three modes of operation. 00 is stereo headphone
mode. 01 is dual mono headphone mode. 10 is bridge-tied load mode.
Reserved
These bits are reserved for future enhancements. They may not be written to. When read they will
read as zero.
Thermal
A 1 on this bit indicates a thermal shutdown was initiated by the hardware. When the temperature
drops to safe levels, the device will start to operate again, regardless of bit status. This bit is
clear-on-read.
SWS
Software shutdown control. When the bit is one, the device is in software shutdown. When the bit
is low, the charge-pump is active. SWS must be low for normal operation.
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Volume and Mute Register (Address: 2)
BIT
7
6
5
4
3
2
1
0
Function
Mute_L
Mute_R
Volume[5]
Volume[4]
Volume[3]
Volume[2]
Volume[1]
Volume[0]
Reset
Value
1
1
0
0
0
0
0
0
Mute_L
Left channel mute. If this bit is High the left channel is muted.
Mute_R
Right channel mute. If this bit is High the right channel is muted.
Volume[5:0]
Six bits for volume control. 111111 indicates the highest gain and 000000 indicates the lowest
gain.
Output Impedance Register (Address: 3)
BIT
7
6
5
4
3
2
1
0
Function
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
HiZ_L
HiZ_R
Reset Value
0
0
0
0
0
0
0
0
Reserved These bits are reserved for future enhancements. They may not be written to. When read they will
read as zero. All writes to these bits will be ignored.
HiZ_L
Puts left-channel amplifier output in tri-state high impedance mode.
HiZ_R
Puts right-channel amplifier output in tri-state high impedance mode.
I2C address and Version Register (Address: 4)
BIT
7
6
5
4
3
2
1
0
Function
Reserved
Reserved
RFT
RFT
Version[3]
Version[2]
Version[1]
Version[0]
Reset Value
0
0
0
0
0
0
0
0
Reserved
These bits are reserved for future enhancements. They may not be written to. When read they will
read as zero.
Version[3:0] The version bits track the revision of the silicon. Valid values are 0010 for released TPA6130A2.
RFT
Reserved for Test. Do NOT write to these registers.
Reserved for test registers (Addresses: 5-8)
BIT
7
6
5
4
3
2
1
0
Function
RFT
RFT
RFT
RFT
RFT
RFT
RFT
RFT
Reset Value
x
x
x
x
x
x
x
x
RFT
Reserved for Test. Do NOT write to these registers.
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Modes of Operation
The TPA6130A2 supports numerous modes of operation.
Hardware Shutdown
Hardware shutdown occurs when the SD pin is set to logic 0. The device is completely shutdown in this mode,
drawing minimal current. This mode overrides all other modes. All information programmed into the registers is
lost. When the device starts up again, the registers go back to their default state.
Software Shutdown
Software shutdown is set by placing a logic 1 in register 1, bit 0. That is the SWS bit. The software shutdown
places the device in a low power state, although the current draw is higher than that of hardware shutdown (see
the Electrical Characteristics Table for values). Engaging software shutdown turns off the charge pump and
disables the outputs. The device is awakened by placing a logic 0 in the SWS bit.
Note that when the device is in SWS mode, register 1, bits 7 and 6 will be cleared to reflect the disabled state of
the amplifier. All other registers maintain their values. Re-enable the amplifer by placing a logic 0 in the SWS bit.
It is necessary to reset the entire register because a full word must be used when writing just one bit.
Charge Pump Enabled, HP Amplifiers Disabled
The output amplifiers of the TPA6130A2 are enabled by placing a logic 1 in register 1, bits 6 and 7. Place a logic
0 in register 1, bits 6 and 7 to disable the output amplifiers. The left and right outputs can be enabled and
disabled individually. When the output amplifiers are disabled, the charge-pump remains on.
HiZ State
HiZ is enabled by placing a logic 1 in register 3, bits 0 and 1. Place a logic 0 in register 3, bits 0 and 1 to disable
the HiZ state of the outputs. The left and right outputs can be placed into a HiZ state individually.
The HiZ state puts the outputs into a state of high impedance. Use this configuration when the outputs of the
TPA6130A2 share traces with other devices whose outputs may be active.
Note that to use the HiZ mode, the TPA6130A2 MUST be active (not in SWS or hardware shutdown).
Furthermore, the output amplifiers must NOT be enabled.
Stereo Headphone Drive
The device is in this mode when the MODE bits in register 1 are 00 and both headphone enable bits are
enabled. The two amplifier channels operate independently. This mode is appropriate for stereo playback.
Dual Mono Headphone Drive
The device is in this mode when the MODE bits in register 1 are 01 and both headphone enable bits are
enabled. The left channel is the active input. It is amplified and distributed to both the left and right headphone
outputs.
Bridge-Tied Load Receiver Drive
The device is in this mode when the MODE bits in register 1 are 10 and both headphone enable bits are
enabled. In this mode, the device will take the left channel input and drive a single load connected between
HPLEFT and HPRIGHT in a bridge-tied fashion. The minimum load for bridge-tied mode is the same as for
stereo mode (see table entitled "Absolute Maximum Ratings").
19
Copyright © 2006–2008, Texas Instruments Incorporated
Product Folder Link(s): TPA6130A2
TPA6130A2
www.ti.com
SLOS488B – NOVEMBER 2006 – REVISED FEBRUARY 2008
Default Mode
The TPA6130A2 starts up with the following conditions:
• SWS = Off, CHARGE PUMP = On
• HP ENABLES = Off
• HiZ = Off
• MODE = Stereo
• HP MUTES = On, VOLUME = -59.5 dB,
VOLUME CONTROL
The TPA6130A2 volume control is set through the I2C interface. The six volume control register bits are decoded
to 64 volume settings that employ an audio taper. See Table 2 for the gain table. The values listed in this table
are typical. Each gain step has a different input impedance. See Figure 33.
Table 2. Audio Taper Gain Values
Gain Control Word
(Binary) Mute [7:6],
V[5:0]
Nominal Gain (dB)
Nominal Gain (V/V)
Gain Control Word
(Binary) Mute [7:6],
V[5:0]
Nominal Gain
(dB)
Nominal Gain (V/V)
11XXXXXX
–100
0.00001
00100000
–10.9
0.283
00000000
–59.5
0.001
00100001
–10.3
0.305
00000001
–53.5
0.002
00100010
–9.7
0.329
00000010
–50.0
0.003
00100011
–9.0
0.353
00000011
–47.5
0.004
00100100
–8.5
0.379
00000100
–45.5
0.005
00100101
–7.8
0.405
00000101
–43.9
0.007
00100110
–7.2
0.433
00000110
–41.4
0.009
00100111
–6.7
0.462
00000111
–39.5
0.012
00101000
–6.1
0.493
00001000
–36.5
0.015
00101001
–5.6
0.524
00001001
–35.3
0.018
00101010
–5.1
0.557
00001010
–33.3
0.022
00101011
–4.5
0.591
00001011
–31.7
0.026
00101100
–4.1
0.627
00001100
–30.4
0.031
00101101
–3.5
0.664
00001101
–28.6
0.037
00101110
–3.1
0.702
00001110
–27.1
0.043
00101111
–2.6
0.742
00001111
–26.3
0.050
00110000
–2.1
0.783
00010000
–24.7
0.057
00110001
–1.7
0.825
00010001
–23.7
0.065
00110010
–1.2
0.870
00010010
–22.5
0.074
00110011
–0.8
0.915
00010011
–21.7
0.084
00110100
–0.3
0.962
00010100
–20.5
0.093
00110101
0.1
1.010
00010101
–19.6
0.104
00110110
0.5
1.061
00010110
–18.8
0.116
00110111
0.9
1.112
00010111
–17.8
0.129
00111000
1.4
1.165
00011000
–17.0
0.142
00111001
1.7
1.220
00011001
–16.2
0.156
00111010
2.1
1.277
00011010
–15.2
0.172
00111011
2.5
1.335
00011011
–14.5
0.188
00111100
2.9
1.395
00011100
–13.7
0.205
00111101
3.3
1.456
00011101
–13.0
0.223
00111110
3.6
1.520
00011110
–12.3
0.242
00111111
4.0
1.585
00011111
–11.6
0.262
20
Copyright © 2006–2008, Texas Instruments Incorporated
Product Folder Link(s): TPA6130A2
PACKAGE OPTION ADDENDUM
www.ti.com
16-Apr-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPA6130A2RTJR
ACTIVE
QFN
RTJ
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPA6130A2RTJRG4
ACTIVE
QFN
RTJ
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPA6130A2RTJT
ACTIVE
QFN
RTJ
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPA6130A2RTJTG4
ACTIVE
QFN
RTJ
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPA6130A2YZHR
ACTIVE
DSBGA
YZH
16
3000 Green (RoHS &
no Sb/Br)
Call TI
Level-1-260C-UNLIM
TPA6130A2YZHT
ACTIVE
DSBGA
YZH
16
250
Call TI
Level-1-260C-UNLIM
Green (RoHS &
no Sb/Br)
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Mar-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPA6130A2RTJR
Package Package Pins
Type Drawing
QFN
RTJ
20
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
3000
330.0
12.4
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
4.3
4.3
1.5
8.0
12.0
Q2
TPA6130A2RTJT
QFN
RTJ
20
250
180.0
12.4
4.3
4.3
1.5
8.0
12.0
Q2
TPA6130A2YZHR
DSBGA
YZH
16
3000
180.0
8.4
2.07
2.07
0.81
4.0
8.0
Q1
TPA6130A2YZHR
DSBGA
YZH
16
3000
180.0
8.4
2.07
2.07
0.81
4.0
8.0
Q1
TPA6130A2YZHR
DSBGA
YZH
16
3000
180.0
8.4
2.07
2.07
0.81
4.0
8.0
Q1
TPA6130A2YZHT
DSBGA
YZH
16
250
180.0
8.4
2.07
2.07
0.81
4.0
8.0
Q1
TPA6130A2YZHT
DSBGA
YZH
16
250
180.0
8.4
2.07
2.07
0.81
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Mar-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPA6130A2RTJR
QFN
RTJ
20
3000
346.0
346.0
29.0
TPA6130A2RTJT
QFN
RTJ
20
250
190.5
212.7
31.8
TPA6130A2YZHR
DSBGA
YZH
16
3000
190.5
212.7
31.8
TPA6130A2YZHR
DSBGA
YZH
16
3000
190.5
212.7
31.8
TPA6130A2YZHR
DSBGA
YZH
16
3000
220.0
220.0
34.0
TPA6130A2YZHT
DSBGA
YZH
16
250
190.5
212.7
31.8
TPA6130A2YZHT
DSBGA
YZH
16
250
220.0
220.0
34.0
Pack Materials-Page 2
D: Max = 1964 µm, Min = 1904 µm
E: Max = 1964 µm, Min = 1904 µm
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