WEITRON 2SC3838

2SC3838
High-Frequency Amplifier Transistor
NPN Silicon
COLLECTOR
3
P b Lead(Pb)-Free
3
1
1
BASE
2
EMITTER
2
SOT-23
MAXIMUM RATINGS (Ta=25ºC)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
11
20
Unit
V
V
V
mA
3.0
50
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1)
TA =25°C
Symbol
PD
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Value
150
Unit
mW
R θJA
625
°C/W
TJ, Tstg
-55 to +150
°C
Device Marking
2SC3838=AD
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(I C =1mA, IB =0)
V(BR)CEO
11
-
V
Collector-Base Breakdown Voltage(I C =10µA, IE =0)
V(BR)CBO
20
-
V
Emitter-Base Breakdown Voltage(IE =10µA, I C =0)
V(BR)EBO
3.0
-
V
Collector Cufoff Current(VCB =10V, IE =0)
ICBO
-
0.5
µA
Emitter Cufoff Current(VEB =2V, I C=0)
IEBO
-
0.5
µA
Characteristics
1. FR-5=1.0 I I0.75 I I0.062 in
WEITRON
http://www.weitron.com.tw
1/3
Rev.A 23-Jan-09
2SC3838
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Symbol
Characteristics
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
VCE=10V ,IC= 5mA
hFE
27
-
270
-
Transition Frequency
VCE=10V ,IC= 10mA, f=500MHz
fT
1.4
-
-
GHz
VCE(sat)
-
-
0.5
V
F
-
-
4.0
dB
Collector-Emitter Saturation Voltage
IC=-10 mA, IB=5mA
Noise Factor
VCE=6V, IC=2mA, f=500MHz
CLASSIFICATION OF hFE
Rank
N
P
Range
56-120
82-180
WEITRON
http://www.weitron.com.tw
2/3
Rev.A 25-Sep-08
2SC3838
SOT-23 Package OutlineDimensions
Unit:mm
Dim
A
B
C
D
E
G
H
J
K
L
M
A
B
TOP V I EW
E
G
C
D
H
K
J
WEITRON
http://www.weitron.com.tw
L
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
M
3/3
23-Apr-07