KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -2.0 A Collector Power Disspation PC 0.5 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg -55 to 150 ˚C WEITRON http://www.weitron.com.tw 1/3 05-Feb-09 KTA1666 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=-1mA,IE=0 BVCBO -50 - - V Collector-Emitter Breakdown Voltage IC=-10mA,I B =0 BVCEO -50 - - V Emitter-Base Breakdown Voltage IC=0,IE=-1mA BVEBO -5 - - V IE=0,VCB=-50V ICBO - - -0.1 µA IC=0,VEB=-5V IEBO - - -0.1 µA DC Current Gain IC=-0.5A,VCE=-2V IC=-1.5A,VCE=-2V hFE(1) hFE(2) 70 40 - 240 - - Collector-Emitter Saturation Voltage IC=-1A, IB =-50mA VCE(sat) - - -0.5 V Base-Emitter Saturation Voltage IC=-1A, IB =-50mA VBE(sat) - - -1.2 V ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Transition Frequency IC=-500mA,VCE =-2V fT - 120 - MHz Cob - 40 - pF Turn on Time t on - 0.1 - Storage Time tstg - 1.0 - Fall Time tf - 0.1 - Collector Output Capacitance IE=0,VCB=-10V,f=1MHz Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A CLASSIFICATION OF hFE(1) Rank O Y Range 70-140 120-240 Marking WO WY WEITRON http://www.weitron.com.tw 2/3 05-Feb-09 KTA1666 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 3/3 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 05-Feb-09