WEITRON KTA1666

KTA1666
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
ABSOLUTE MAXIMUM RATINGS(Ta
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current-Continuous
IC
-2.0
A
Collector Power Disspation
PC
0.5
W
Junction Temperature
TJ
150
˚C
Storage Temperature
Tstg
-55 to 150
˚C
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KTA1666
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC=-1mA,IE=0
BVCBO
-50
-
-
V
Collector-Emitter Breakdown Voltage
IC=-10mA,I B =0
BVCEO
-50
-
-
V
Emitter-Base Breakdown Voltage
IC=0,IE=-1mA
BVEBO
-5
-
-
V
IE=0,VCB=-50V
ICBO
-
-
-0.1
µA
IC=0,VEB=-5V
IEBO
-
-
-0.1
µA
DC Current Gain
IC=-0.5A,VCE=-2V
IC=-1.5A,VCE=-2V
hFE(1)
hFE(2)
70
40
-
240
-
-
Collector-Emitter Saturation Voltage
IC=-1A, IB =-50mA
VCE(sat)
-
-
-0.5
V
Base-Emitter Saturation Voltage
IC=-1A, IB =-50mA
VBE(sat)
-
-
-1.2
V
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Transition Frequency
IC=-500mA,VCE =-2V
fT
-
120
-
MHz
Cob
-
40
-
pF
Turn on Time
t on
-
0.1
-
Storage Time
tstg
-
1.0
-
Fall Time
tf
-
0.1
-
Collector Output Capacitance
IE=0,VCB=-10V,f=1MHz
Switching Time
VCC=30V,IC=1A,IB1=-IB2=-0.05A
Switching Time
VCC=30V,IC=1A,IB1=-IB2=-0.05A
Switching Time
VCC=30V,IC=1A,IB1=-IB2=-0.05A
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
70-140
120-240
Marking
WO
WY
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KTA1666
SOT-89 Outline Dimensions
Dim
E
G
H
B
K
A
B
C
D
E
G
H
J
K
L
A
C
J
unit:mm
D
L
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SOT-89
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
05-Feb-09