KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics. 3 SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 2 A Collector Power Disspation PC 0.5 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg -55 - 150 ˚C WEITRON http://www.weitron.com.tw 1/4 10-Jul-07 KTC4377 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=1mA,IE=0 BVCBO 30 - - V Collector-Emitter Breakdown Voltage IC=10mA,IB=0 BVCEO 10 - - V Emitter-Base Breakdown Voltage IC=0,IE=1mA BVEBO 6 - - V Collector Cut-Off Current IE=0,VCB=30V ICBO - - 0.1 µA Emitter-Cut-Off Current IC=0,VEB=6V IEBO - - 0.1 µA DC Current Gain IC=0.5A,VCE=1V IC=2A,VCE=1V hFE(1) 140 - 600 - hFE(2) 70 - - - Collector-Emitter Saturation Voltage IC=2A, IB=50mA VCE(sat) - - 0.5 V Base-emitter on voltage IC=2A,VCE=1V VBE(on) - - 1.5 V fT - 150 - MHz Cob - 27 - pF ON CHARACTERISTICS* *Pulse Test: Pluse Width ≤ 380µs, Duty Cycle ≤ 2%. DYNAMIC CHARACTERISTICS Transition Frequency IC=0.5A,VCE=1V Collector Output Capacitance IE=0,VCB=10V,f=1MHz CLASSIFICATION OF hFE(1) Rank A B C D Range 140-240 200-330 300-450 420-600 Marking SA SB SC SD WEITRON http://www.weitron.com.tw 2/4 10-Jul-07 KTC4377 Typical Characterisrics 60 1k COMMON EMITTER 25 15 3.0 hFE,DC CURRENT GAIN IC[mA],COLLECTOR CURRENT 4.0 10 2.0 IB = 5mA 1.0 0 0 0 1.0 2.0 3.0 4.0 5.0 500 300 100 50 30 COMMON EMITTER VCE = 1V 10 6.0 0.01 0.03 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA],COLLECTOR CURRENT IC[mA],COLLECTOR CURRENT IC/IB = 10 0.3 0.1 0.05 0.03 0.01 0.01 0.03 0.1 0.3 1 3 4.0 3.2 2.4 1.6 0.8 0 10 0 0.4 COLLECTOR POWER DISSIPATION PC (W) 0.3 0.1 0.03 0.01 0.1 s m 10 IC[mA],COLLECTOR CURRENT IC MAX(PULSE) DC 10 0m S O PE RA TI O N SING NONREPETITIVE CURVES MUST BE DERATED LINEARLY WITH IN CREASE IN TEMPERATURE 0.3 1 1.6 2.0 2.4 2.8 Fig.4 IC - VBE 10 IC MAX(CONTINUOUS) 1.2 0.8 VBE[V], BASE EMITTER VOLTAGE Fig.3 VCE(sat) - IC 1 10 COMMON EMITTER VCE = 1V VCE[V], COLLECTOR-EMITTER VOLTAGE 3 3 Fig.2 hFE - IC COMMON EMITTER 0.5 1 0.3 IC[mA], COLLECTOR CURRENT Fig.1 IC - VCE 1 0.1 3 10 30 1.2 1 1 1.0 MOUNTED ON CERAMIC SUBSTRATE (250mm 2x0.8t) 2 0.8 0.6 2 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Fig.6 PC - Ta 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Fig.5 SAFE OPERATING AREA WEITRON http://www.weitron.com.tw 3/4 10-Jul-07 KTC4377 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 4/4 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 10-Jul-07