KTD1304 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 3 1 2 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 12 V Collector Current-Continuous IC 0.3 A Collector Power Disspation PC 0.2 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg -55 - 150 ˚C WEITRON http://www.weitron.com.tw 1/4 05-Feb-09 KTD1304 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=0.1mA,I E =0 BVCBO 25 - - V Collector-Emitter Breakdown Voltage IC=1mA,I B=0 BVCEO 20 - - V Emitter-Base Breakdown Voltage IC=0,IE=0.1mA BVEBO 12 - - V IE=0,VCB=25V ICBO - - 0.1 µA IC=0,VEB=12V IEBO - - 0.1 µA ON CHARACTERISTICS DC Current Gain IC=4mA,VCE=2V IC=4mA,VCE=2V hFE(FOR) hFE(REV) 200 20 - 800 - - Collector-Emitter Saturation Voltage IC=0.1A, IB =10mA VCE(sat) - - 0.25 V Base-Emitter Saturation Voltage IC=0.1A, IB =10mA VBE(sat) - - 1 V fT - 60 - MHz Collector Output Capacitance IE=0,VCB=10V,f=1MHz Cob - 10 - pF On Resistance IB=1mA,Vin =0.3V,f=1KHz R (on) - 0.6 - Ω DYNAMIC CHARACTERISTICS Transition Frequency IC=1mA,VCE=10V,f=100MHz WEITRON http://www.weitron.com.tw 2/4 05-Feb-09 KTD1304 Typical characteristics WEITRON http://www.weitron.com.tw 3/4 05-Feb-09 KTD1304 SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 05-Feb-09