ADPOW APT10M11JVRU2

APT10M11JVRU2
ISOTOP® Boost chopper
MOSFET Power Module
K
D
S
K
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very rugged
• Low profile
D
G
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
Features
• Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
G
S
VDSS = 100V
RDSon = 11mΩ max @ Tj = 25°C
ID = 142A @ Tc = 25°C
ISOTOP
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
IFA V
IFRMS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
Tc = 25°C
Tc = 90°C
Max ratings
100
142
106
576
±30
11
450
144
50
2500
30
47
Unit
V
A
V
mΩ
W
A
mJ
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APT10M11JVRU2 – Rev 0 October, 2004
Absolute maximum ratings
APT10M11JVRU2
All ratings @ Tj = 25°C unless otherwise specified
Symbol
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
VF
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Rise Time
Turn-off Delay Time
Fall Time
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IRRM
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 71A
VGS = VDS, ID = 2.5mA
VGS = ±20 V, VDS = 0V
2
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 50V
ID = 50A @ TJ=25°C
Typ
8600
3200
1180
300
Unit
V
250
1000
11
4
±100
mΩ
V
nA
Max
Unit
µA
pF
nC
110
16
48
ns
51
9
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
21
IF = 30A
VR = 133V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
3
6
33
150
31
335
19
IF = 30A
VR = 133V
di/dt =1000A/µs
Max
95
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 200V
VR = 200V
VR = 200V
IF=1A,VR=30V
di/dt =200A/µs
Reverse Recovery Time
IRRM
Min
100
VGS = 15V
VBus = 50V
ID = 142A @ TJ=25°C
R G = 0.6Ω
Diode ratings and characteristics
Symbol
Test Conditions
VGS = 0V, ID = 250µA
Min
Typ
1.1
1.4
0.9
250
500
94
Tj = 125°C
APT website – http://www.advancedpower.com
Max
1.15
Unit
V
µA
pF
ns
A
nC
ns
nC
A
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APT10M11JVRU2 – Rev 0 October, 2004
Electrical Characteristics
APT10M11JVRU2
Thermal and package characteristics
Symbol
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Characteristic
Min
Typ
MOSFET
Diode
Junction to Case
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
Max
0.28
1.21
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
APT website – http://www.advancedpower.com
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APT10M11JVRU2 – Rev 0 October, 2004
Typical MOSFET Performance Curve
APT website – http://www.advancedpower.com
4–7
APT10M11JVRU2 – Rev 0 October, 2004
APT10M11JVRU2
APT10M11JVRU2
APT website – http://www.advancedpower.com
5–7
APT10M11JVRU2 – Rev 0 October, 2004
Typical Diode Performance Curve
APT website – http://www.advancedpower.com
6–7
APT10M11JVRU2 – Rev 0 October, 2004
APT10M11JVRU2
APT10M11JVRU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
Cathode
30.1 (1.185)
30.3 (1.193)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
7–7
APT10M11JVRU2 – Rev 0 October, 2004
7.8 (.307)
8.2 (.322)