ADPOW APTM100U13S

APTM100U13S
Single switch
Series & parallel diodes
MOSFET Power Module
SK
VDSS = 1000V
RDSon = 130mΩ typ @ Tj = 25°C
ID = 65A @ Tc = 25°C
Application
CR1
D
S
•
•
•
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Q1
•
G
•
•
Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
65
48
260
±30
145
1250
17
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–5
APTM100U13S – Rev 2 July, 2005
•
•
•
APTM100U13S
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 500V
ID = 65A
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, R G = 1.5Ω
Eon
Turn-on Switching Energy
Inductive switching @ 125°C
Eoff
Turn-off Switching Energy
RthJC
Junction to Case
Symbol Characteristic
VRRM
Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF(A V)
Maximum Average Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Test Conditions
VR=200V
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 133V
di/dt = 400A/µs
mΩ
V
nA
Unit
116
180
nC
660
1000
nF
ns
125
40
2.6
1.6
4.2
µJ
µJ
1.82
Typ
0.1
°C/W
Max
Unit
V
350
600
Tj = 125°C
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
120
Tj = 125°C
500
µA
A
1.15
V
ns
nC
0.46
APT website – http://www.advancedpower.com
µA
Max
31.6
3.32
1.72
2000
120
1.1
1.4
0.9
Junction to Case
Unit
Typ
26.4
2.38
1.16
1340
20
Min
200
Tj = 25°C
Tj = 125°C
Tc = 80°C
Max
100
400
145
4
±200
20
VGS = 15V, VBus = 667V
ID = 65A, R G = 1.5Ω
Series diode ratings and characteristics
VF
130
2
Inductive Switching @ 25°C
VGS = 15V
VBus = 667V
ID = 65A
R G = 1.5Ω
Rise Time
Typ
°C/W
2–5
APTM100U13S – Rev 2 July, 2005
Symbol Characteristic
APTM100U13S
Parallel diode ratings and characteristics
Symbol Characteristic
VRRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
IRM
Maximum Reverse Leakage Current
VR=1000V
IF(A V)
Maximum Average Forward Current
50% duty cycle
Diode Forward Voltage
IF = 100A
IF = 200A
IF = 100A
VF
trr
Reverse Recovery Time
IF = 100A
VR = 667V
Qrr
Reverse Recovery Charge
di/dt = 200A/µs
RthJC
Min
1000
Tj = 25°C
Tj = 125°C
Tc = 40°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
300
360
800
Tj = 125°C
4050
Junction to Case
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
M4
M6
Max
250
500
100
1.9
2.2
1.7
Thermal and package characteristics
Symbol
VISOL
TJ
TSTG
TC
Typ
Min
2500
-40
-40
-40
3
Typ
Unit
V
µA
A
2.5
V
ns
nC
0.6
°C/W
Max
Unit
V
150
125
100
1.2
5
400
°C
N.m
g
APT website – http://www.advancedpower.com
3–5
APTM100U13S – Rev 2 July, 2005
J3 Package outline (dimensions in mm)
APTM100U13S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.1
0.02
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
V GS =15V
150
ID, Drain Current (A)
ID, Drain Current (A)
10
200
200
5V
100
4.5V
50
4V
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
150
100
50
T J=125°C
TJ =-55°C
TJ =25°C
0
0
0
5
10
15
VDS , Drain to Source Voltage (V)
20
0
RDS(on) vs Drain Current
1.30
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
70
Normalized to
VGS =10V @ 32.5A
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
1
V GS =10V
1.20
1.10
VGS =20V
1.00
0.90
60
50
40
30
20
10
0
0
50
100
150
ID, Drain Current (A)
200
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4–5
APTM100U13S – Rev 2 July, 2005
Thermal Impedance (°C/W)
0.12
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100U13S
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
100000
1.2
25 50
75 100 125 150
Capacitance vs Drain to Source Voltage
Ciss
1.1
C, Capacitance (pF)
VGS (TH), Threshold Voltage
(Normalized)
0
T J, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
0.9
0.8
0.7
0.6
Gate Charge vs Gate to Source Voltage
18
16
14
IDR , Reverse Drain Current (A)
ID=65A
T J=25°C
VDS=500V
12
VDS=200V
10
8
VDS=800V
6
4
2
0
10000
Coss
1000
Crss
100
0.01
0.1
1
10
100
VDS, Drain to Source Voltage (V)
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS, Gate to Source Voltage (V)
ON resistance vs Temperature
VGS=10V
ID=32.5A
1000
100
Source to Drain Diode Forward Voltage
TJ=150°C
10
TJ=25°C
1
0
500
1000
1500
Gate Charge (nC)
2000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VS D, Source to Drain Voltage (V)
Operating Frequency vs Drain Current
250
ZVS
ZCS
150
100
50
V DS=667V
D=50%
R G=1.5Ω
T J=125°C
T C=75°C
Hard
switching
0
10
20
30
40
50
ID, Drain Current (A)
60
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5–5
APTM100U13S – Rev 2 July, 2005
Frequency (kHz)
200