INTERSIL HGTG24N60D1

HGTG24N60D1
24A, 600V N-Channel IGBT
May 1995
Features
Package
• 24A, 600V
JEDEC STYLE TO-247
EMITTER
• Latch Free Operation
COLLECTOR
• Typical Fall Time <500ns
GATE
• High Input Impedance
COLLECTOR
(BOTTOM SIDE
METAL)
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
G
PACKAGING AVAILABILITY
PART NUMBER
HGTG24N60D1
PACKAGE
TO-247
Absolute Maximum Ratings
BRAND
E
G24N60D1
TC = +25oC, Unless Otherwise Specific
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125 inch from case for 5s)
HGTG24N60D1
600
600
40
24
96
±25
60A at 0.8 BVCES
125
1.0
-55 to +150
260
UNITS
V
V
A
A
A
V
W
W/oC
oC
oC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-103
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2831.3
Specifications HGTG24N60D1
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
Collector-Emitter Breakdown Voltage
BVCES
Collector-Emitter Leakage Voltage
ICES
Collector-Emitter Saturation Voltage
VCE(SAT)
Gate-Emitter Threshold Voltage
TEST CONDITIONS
IC = 250µA, VGE = 0V
MIN
TYP
MAX
UNITS
600
-
-
V
VCE = BVCES
TC = +25oC
-
-
1.0
mA
VCE = 0.8 BVCES
TC = +125oC
-
-
4.0
mA
IC = IC90,
VGE = 15V
TC = +25oC
-
1.7
2.3
V
TC = +125oC
-
1.9
2.5
V
3.0
4.5
6.0
V
TC= +25oC
VGE(TH)
IC = 250µA,
VCE = VGE
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±500
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
6.3
-
V
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
-
120
155
nC
VGE = 20V
-
155
200
nC
-
100
-
ns
-
150
-
ns
tD(OFF)I
-
700
900
ns
tFI
-
450
600
ns
Turn-Off Energy (Note 1)
WOFF
-
4.3
-
mJ
Thermal Resistance
RθJC
-
-
1.00
oC/W
On-State Gate Charge
QG(ON)
Current Turn-On Delay Time
tD(ON)I
Current Rise Time
tRI
Current Turn-Off Delay Time
Current Fall Time
L = 500µH, IC = IC90, RG = 25Ω,
VGE = 15V, TJ = +150oC,
VCE = 0.8 BVCES
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A) The HGTG24N60D1 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 15V
30
20
TC = +150oC
TC = +25oC
10
TC =
-40oC
VGE = 15V
35
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = +25oC
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
40
30
25
20
15
10
5
VGE = 10V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
VGE = 5.5V
VGE = 5.0V
0
0
0
2
4
6
8
10
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-104
5
HGTG24N60D1
Typical Performance Curves (Continued)
1000
50
800
40
tFI , FALL TIME (ns)
30
20
10
700
600
500
400
300
200
100
0
0
+25
+50
+75
+100
+125
+150
1
10
TC , CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
600
VCE, COLLECTOR-EMITTER VOLTAGE (V)
6000
f = 1MHz
C, CAPACITANCE (pF)
5000
4000
CISS
3000
2000
COSS
1000
CRSS
10
VCC = BVCES
450
300
VCC = BVCES
5
0.75 BVCES 0.75 BVCES
0.25 BVCES 0.25 BVCES
150
2.5
RL = 30Ω
IG(REF) = 1.83mA
VGE = 10V
0
0
5
10
15
20
0
IG(REF)
25
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
7.5
0.50 BVCES 0.50 BVCES
0
IG(ACT)
IG(REF)
80
TIME (µs)
IG(ACT)
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
7.00
TJ =
WOFF , TURN-OFF SWITCHING LOSS (mJ)
3
VCE(ON), SATURATION VOLTAGE (V)
40
ICE, COLLECTOR-EMITTER CURRENT (A)
VGE, GATE-EMITTER VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
VCE = 480V, VGE = 10V AND 15V,
TJ = +150oC, RG = 25Ω, L = 500µH
900
VGE = 15V
+150oC
VGE = 10V
2
VGE = 15V
1
TJ = +150oC, RG = 25Ω,
L = 500µH
VCE = 480V, VGE = 10V, 15V
1.00
VCE = 240V, VGE = 10V, 15V
0.10
0.05
0
1
10
1
40
ICE, COLLECTOR-EMITTER CURRENT (A)
10
40
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
3-105
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
HGTG24N60D1
Typical Performance Curves (Continued)
80
1200
VCE = 480V, VGE = 10V
1100
VCE = 480V, VGE = 15V
fOP , OPERATING FREQUENCY (kHz)
tD(OFF)I , TURN-OFF DELAY (ns)
1300
1000
T = +150oC
900 J
RGE = 25Ω
800 L = 500µH
700
600
VCE = 240V, VGE = 10V
500
VCE = 240V, VGE = 15V
400
10
TJ = +150oC, TC = +100oC,
RGE = 25Ω, L = 500µH
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
PC = DUTY FACTOR = 50%
RθJC = 1.0oC/W
VCE = 480V, VGE = 10V, 15V
VCE = 240V, VGE = 10V, 15V
1
1
10
50
ICE, COLLECTOR-EMITTER CURRENT (A)
NOTE:
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
300
1
10
40
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible.
tD(OFF)I is defined as the time between the 90% point of the
trailing edge of the input pulse and the point where the
collector current falls to 90% of its maximum value. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJMAX. tD(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable
dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum
of device switching and conduction losses must not exceed PD.
A 50% duty factor was used (Figure 10) and the conduction
losses (PC) are approximated by PC = (VCE • ICE)/2. WOFF is
defined as the integral of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (ICE = 0A).
The switching power loss (Figure 10) is defined as fMAX2 • WOFF.
Turn-on switching losses are not included because they can be
greatly influenced by external circuit conditions and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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