APTDC902U1201G Single SiC Diode Power Module VRRM = 1200V IF = 90A @ Tc = 80°C Application • • • • Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits All multiple inputs and outputs must be shorted together 1/2 ; 5/6 ; 7/8 ; 11/12 • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 80°C TC = 25°C Max ratings Unit 1200 V 90 1100 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDC902U1201G – Rev 0 February, 2009 Absolute maximum ratings (per leg) APTDC902U1201G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Test Conditions Min Tj = 25°C Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 90A, VR = 600V di/dt =4500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V IF = 90A Typ 1.6 2.3 288 504 Max 1.8 3.0 1800 9000 Unit V µA 360 nC 864 621 pF Thermal and package characteristics (per leg) Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Typ Max 0.22 175 125 100 4.7 80 Unit °C/W V °C N.m g 2-4 APTDC902U1201G – Rev 0 February, 2009 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDC902U1201G SP1 Package outline (dimensions in mm) www.microsemi.com 3-4 APTDC902U1201G – Rev 0 February, 2009 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTDC902U1201G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.24 0.9 0.2 0.7 0.16 0.5 0.12 0.3 0.08 0.1 0.04 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics TJ=25°C 160 IR Reverse Current (µA) IF Forward Current (A) 900 TJ=75°C 120 80 TJ=125°C TJ=175°C 40 750 600 450 TJ=75°C 300 TJ=125°C 150 TJ=175°C TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 6300 5400 4500 3600 2700 1800 900 0 10 100 VR Reverse Voltage 1000 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDC902U1201G – Rev 0 February, 2009 1