MICROSEMI APT2X61DC120J

APT2X61DC120J
APT2X60DC120J
ISOTOP® SiC Diode
Power Module
2
2
3
1
4
VRRM = 1200V
IF = 60A @ TC = 100°C
3
Application
• Uninterruptible Power Supply (UPS)
• Induction heating
• Welding equipment
• High speed rectifiers
Anti-Parallel
1
APT2X60DC120J
4
Parallel
APT2X61DC120J
3
2
4
1
Features
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Low losses
• Low noise switching
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
ISOTOP®
Symbol
VR
VRRM
IF(AV)
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward Current Duty cycle = 50%
Non-Repetitive Forward Surge Current
10 µs
TC = 100°C
TC = 25°C
Max ratings
Unit
1200
V
60
750
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APT2X61_60DC120J – Rev 0 December, 2007
Absolute maximum ratings (per leg)
APT2X61DC120J
APT2X60DC120J
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic
Test Conditions
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
QC
Total Capacitive Charge
C
Total Capacitance
Min
Tj = 25°C
IF = 60A
Tj = 175°C
Tj = 25°C
VR = 1200V
Tj = 175°C
IF = 60A, VR = 600V
di/dt =3000A/µs
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
Typ
1.6
2.3
192
336
Max
1.8
3.0
1200
6000
Unit
V
µA
240
nC
576
414
pF
Thermal and package characteristics (per leg)
Symbol
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Characteristic
Junction to Case Thermal resistance
Junction to Ambient (IGBT & Diode)
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-55
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Typ
Max
0.26
20
Unit
°C/W
V
175
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
3
30.1 (1.185)
30.3 (1.193)
4
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
2
1
Dimensions in Millimeters and (Inches)
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APT2X61_60DC120J – Rev 0 December, 2007
7.8 (.307)
8.2 (.322)
APT2X61DC120J
APT2X60DC120J
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.3
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
120
600
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
100
TJ=75°C
80
60
TJ=125°C
40
TJ=175°C
20
500
400
300
TJ=75°C
200
TJ=125°C
100
TJ=175°C
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
0
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
4200
3600
3000
2400
1800
1200
0
1
10
100
VR Reverse Voltage
1000
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT2X61_60DC120J – Rev 0 December, 2007
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