AOSMD AO4803A

AO4803A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4803A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4803A is Pb-free
(meets ROHS & Sony 259 specifications)
VDS (V) = -30V
ID = -5 A (VGS = -10V)
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 74mΩ (VGS = -4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
SOIC-8
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D1
D2
D2
D1
D1
G1
Pulsed Drain Current
TA=25°C
ID
IDM
TA=70°C
B
Maximum
-30
Units
V
±20
V
B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
A
-4
-30
2
PD
TA=70°C
Repetitive avalanche energy 0.3mH
S2
-5
TA=25°C
Power Dissipation
Avalanche Current B
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current AF
D2
W
1.3
IAR
11
A
EAR
18
mJ
-55 to 150
°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
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AO4803A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
±100
nA
-2.5
V
37
46
52
68
VGS=-4.5V, ID=-4A
60
74
VDS=-5V, ID=-5A
11
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
µA
-2
VGS=-10V, ID=5.0A
Coss
Units
V
TJ=55°C
VGS(th)
IS
Max
-1
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
A
-0.77
668
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
mΩ
mΩ
S
-1
V
-2
A
830
pF
126
pF
92
pF
6
9
Ω
12.7
16
nC
6.4
nC
2
nC
4
nC
7.7
ns
6.8
ns
20
ns
10
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
15
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
Rev0: Feb 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4803A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
40
-10V
35
-8V
VDS=-5V
-5V
8
25
-4.5V
20
-4V
125°C
6
-ID(A)
-ID (A)
30
25°C
4
15
VGS=-3.5V
10
2
-40°C
5
0
0
0
1
2
3
4
5
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics
100
VGS=-4.5V
60
VGS=-10V
40
Normalized On-Resistance
1.6
80
RDS(ON) (mΩ)
2
VGS=-10V
ID=-5A
1.4
1.2
VGS=-4.5V
ID=-4A
1.0
0.8
20
0
2
4
IF6=-6.5A, dI/dt=100A/µs
8
10
0.6
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
ID=-5A
150
200
1E+00
1E-01
-IS (A)
RDS(ON) (mΩ)
100
1E+01
120
100
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
140
0
125°C
1E-02
125°C
80
1E-03
25°C FOR THE CONSUMER
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED
MARKET. APPLICATIONS OR USES AS CRITICAL
60
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
25°C
-40°CDESIGN,
-40°C
OUT OF SUCH
APPLICATIONS
OR
USES
OF
ITS
PRODUCTS.
AOS
RESERVES
THE
RIGHT TO IMPROVE PRODUCT
40
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20
1E-06
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-V
(Volts)
SD
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4803A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
Ciss
Capacitance (pF)
-VGS (Volts)
1000
VDS=-15V
ID=-5A
8
6
4
2
800
600
400
Coss
200
Crss
0
0
0
3
6
9
12
15
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
40
30
RDS(ON)
limited
10
100µs
1ms
1
Power (W)
-ID (Amps)
TJ(Max)=150°C
TA=25°C
10ms
TJ(Max)=150°C
TA=25°C
0.1
10
100ms
1s
10s
DC
0.1
0
0.001
dI/dt=100A/µs
IF=-6.5A,
10
100
1
ZθJA Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR D=T
SYSTEMS
ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
on/T
OUT OF SUCH
AOS
RESERVES
THE
RIGHT
TO
IMPROVE
PRODUCT DESIGN,
=T
+P
.Z
.R
0.01APPLICATIONS OR USES OF ITSTPRODUCTS.
J,PK
A
DM θJA θJA
Ton
R
=110°C/W
FUNCTIONS AND RELIABILITY
WITHOUT
NOTICE.
T
θJA
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com