AO4803A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4803A is Pb-free (meets ROHS & Sony 259 specifications) VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 74mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D1 D2 D2 D1 D1 G1 Pulsed Drain Current TA=25°C ID IDM TA=70°C B Maximum -30 Units V ±20 V B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. A -4 -30 2 PD TA=70°C Repetitive avalanche energy 0.3mH S2 -5 TA=25°C Power Dissipation Avalanche Current B G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF D2 W 1.3 IAR 11 A EAR 18 mJ -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W www.aosmd.com AO4803A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 ±100 nA -2.5 V 37 46 52 68 VGS=-4.5V, ID=-4A 60 74 VDS=-5V, ID=-5A 11 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time µA -2 VGS=-10V, ID=5.0A Coss Units V TJ=55°C VGS(th) IS Max -1 VDS=-30V, VGS=0V IGSS RDS(ON) Typ A -0.77 668 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-5A VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω mΩ mΩ S -1 V -2 A 830 pF 126 pF 92 pF 6 9 Ω 12.7 16 nC 6.4 nC 2 nC 4 nC 7.7 ns 6.8 ns 20 ns 10 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 15 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating. Rev0: Feb 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4803A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 40 -10V 35 -8V VDS=-5V -5V 8 25 -4.5V 20 -4V 125°C 6 -ID(A) -ID (A) 30 25°C 4 15 VGS=-3.5V 10 2 -40°C 5 0 0 0 1 2 3 4 5 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=-4.5V 60 VGS=-10V 40 Normalized On-Resistance 1.6 80 RDS(ON) (mΩ) 2 VGS=-10V ID=-5A 1.4 1.2 VGS=-4.5V ID=-4A 1.0 0.8 20 0 2 4 IF6=-6.5A, dI/dt=100A/µs 8 10 0.6 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage ID=-5A 150 200 1E+00 1E-01 -IS (A) RDS(ON) (mΩ) 100 1E+01 120 100 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 140 0 125°C 1E-02 125°C 80 1E-03 25°C FOR THE CONSUMER THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED MARKET. APPLICATIONS OR USES AS CRITICAL 60 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25°C -40°CDESIGN, -40°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT 40 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS (Volts) -V (Volts) SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4803A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 Ciss Capacitance (pF) -VGS (Volts) 1000 VDS=-15V ID=-5A 8 6 4 2 800 600 400 Coss 200 Crss 0 0 0 3 6 9 12 15 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100 40 30 RDS(ON) limited 10 100µs 1ms 1 Power (W) -ID (Amps) TJ(Max)=150°C TA=25°C 10ms TJ(Max)=150°C TA=25°C 0.1 10 100ms 1s 10s DC 0.1 0 0.001 dI/dt=100A/µs IF=-6.5A, 10 100 1 ZθJA Normalized Transient Thermal Resistance 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR D=T SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING on/T OUT OF SUCH AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, =T +P .Z .R 0.01APPLICATIONS OR USES OF ITSTPRODUCTS. J,PK A DM θJA θJA Ton R =110°C/W FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T θJA Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com