AO4724 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4724 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard product AO4724 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V (VGS = 10V) ID = 10.5A RDS(ON) < 17.5mΩ (VGS = 10V) RDS(ON) < 29 mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D SOIC-8 TM D D D D S S S G SRFET Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain AF Current Symbol ±20 TA=25°C 10.5 ID TA=70°C Pulsed Drain Current B Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. 6.2 A 3.1 1.7 2.0 1.1 W IAR 13 A EAR 25 mJ -55 to 150 °C TJ, TSTG Symbol t ≤ 10s V 80 PD TA=70°C Units V 7.7 8.5 IDM TA=25°C Power Dissipation Avalanche Current B Maximum 10 Sec Steady State 30 RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4724 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 80 RDS(ON) Static Drain-Source On-Resistance 17.5 VGS=4.5V, ID=8A 22.7 29.0 VDS=5V, ID=10.5A 23 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 0.4 696 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10.5A V A 25.8 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current nA 2 14.4 Forward Transconductance Reverse Transfer Capacitance 1.64 21.5 TJ=125°C VSD mA 20 100 VGS=10V, ID=10.5A Crss V TJ=55°C gFS Units 0.1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS IS Typ mΩ mΩ S 0.5 V 4.8 A 900 pF 199 pF 81 pF 1.2 1.8 Ω 12.4 16 nC 6.1 8 nC 2.04 nC Gate Drain Charge 2.7 nC Turn-On DelayTime 2.6 ns VGS=10V, VDS=15V, RL=1.43Ω, RGEN=3Ω 6.8 ns 17 ns 3.6 trr Body Diode Reverse Recovery Time IF=10.5A, dI/dt=300A/µs 20.2 Qrr Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=300A/µs 7.9 ns 26 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with AT=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev1: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4724 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 80 10V 8V VDS=5V 5V 60 24 6V 18 ID(A) ID (A) 4.5V 40 4V 12 3.5V 20 125°C 6 VGS=3V 25°C 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance RDS(ON) (mΩ) 800 140 80 ID=10.5A 0.5 1.8 VGS=4.5V 22 18 14 VGS=10V 10 3 4 5 1.6 220 140 VGS=10V 15 7 1.4 VGS=4.5V 1.2 1 0.8 0 6 12 18 24 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 1.0E+01 ID=10.5A 46 1.0E+00 125°C 1.0E-01 125°C 30 IS (A) 38 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 54 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics 30 26 1 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1.0E-03MARKET. APPLICATIONS OR USES AS CRITICAL 22 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-04THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 14 25°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE 1.0E-05 6 0.0 0.2 0.4 0.6 0.8 1.0 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4724 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=10.5A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 0 3 6 9 12 Crss 0 15 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 0.1s TJ(Max)=150°C TA=25°C 1.0 1s 20 25 30 220 140 TJ(Max)=150°C TA=25°C 40 10µs 10.0 Power (W) ID (Amps) 800 140 80 0.5 50 10ms 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10 1ms 15 7 30 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES PD NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Single Pulse 0.01 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com