AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4716 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Drain-Source Voltage Avalanche Current 10 Sec VDS IDSM IDM B B Repetitive avalanche energy L=0.3mH B TA=25°C Power Dissipation 16.5 12.0 13.0 9.6 IAR EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient AF t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. RθJA RθJL A 180 A 25 A 94 PDSM TA=70°C Units V V ±20 TA=25°C TA=70°C Steady State 30 VGS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Symbol mJ 3.1 1.7 2.0 1.1 W °C -55 to 150 Typ 31 59 Max 40 75 Units °C/W °C/W 16 24 °C/W www.aosmd.com AO4716 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V VDS=30V, V GS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, V DS=5V 180 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 20 0.1 1.6 2 mA µA V A 5.8 9.9 7.0 12.3 mΩ VGS=4.5V, ID=13A 8.2 10.0 mΩ VDS=5V, ID=16.5A 55 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Units V TJ=125°C VGS=10V, ID=16.5A Coss Max 0.1 IDSS IS Typ 0.33 2154 S 0.5 V 5.5 A 2650 pF VGS=0V, VDS=15V, f=1MHz 474 VGS=0V, VDS=0V, f=1MHz 0.75 1.1 Ω 37 45 nC 17.8 23 nC pF 185 VGS=10V, VDS=15V, ID=16.5A pF 6.6 nC Qgd Gate Drain Charge 7.6 nC tD(on) Turn-On DelayTime 6.8 ns tr Turn-On Rise Time 7.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=16.5A, dI/dt=300A/us 12 Qrr Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/us 10.5 VGS=10V, V DS=15V, R L=0.8Ω, RGEN=3Ω 25.2 ns 5.8 ns 18 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤10s thermal resistance rating. Rev1:May 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 30 10V 5V 6V 150 4.5V 7V 120 20 4V 90 ID(A) ID (A) VDS=5V 25 3.5V 60 125°C 15 10 25°C VGS=3V 30 5 0 0 0 1 2 3 4 1 5 2 VDS (Volts) Figure 1: On-Region Characteristics 3 12 1.8 Normalized On-Resistance ID=16.5A 10 RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics VGS=4.5V 8 6 VGS=10V 4 VGS=10V 1.6 1.4 VGS=4.5V 1.2 1 2 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 13 60 120 150 180 1.0E+02 1.0E+01 125°C 125°C 1.0E+00 IS (A) 9 7 25°C 1.0E-01 1.0E-02 1.0E-03 25°C 5 90 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID=16.5A 11 RDS(ON) (mΩ) 30 1.0E-04 1.0E-05 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 3000 VDS=15V ID=16.5A 6 4 Ciss 2500 Capacitance (pF) VGS (Volts) 8 2000 1500 Crss 1000 Coss 2 500 0 0 8 16 24 32 0 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10.0 100µ 0.1s 1ms 10s 1s DC 0.1 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=150°C TA=25°C 80 10µs Power (W) ID (Amps) 100.0 RDS(ON) limited 10 100 TJ(Max)=150°C T A=25°C 1.0 5 60 40 20 0.0 0.1 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.9 0.8 1.0E-02 10A 0.6 VDS=12V VSD(V) IR (A) VDS=24V 1.0E-03 20A 0.7 1.0E-04 0.5 5A 0.4 0.3 0.2 1.0E-05 IS=1A 0.1 1.0E-06 0 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 70 8 Irm trr (ns) 5 25ºC 10 Irm (A) 6 125ºC 2.5 125ºC 20 25ºC 30 2 trr 15 25ºC 1.5 10 25ºC S 1 5 0.5 125ºC 0 4 0 5 10 15 20 25 8 125ºC 7 25ºC 4 30 Qrr 20 3 2 10 1 Irm 0 0 200 400 600 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 20 25 30 3 Is=20A 25 trr (ns) 5 25ºC 15 30 6 125ºC 40 10 35 Irm (A) Is=20A 50 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 60 0 0 30 125ºC 2 25ºC 20 25ºC trr 15 10 S 0 Qrr (nC) 3 di/dt=800A/us Qrr 20 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 25 7 50 40 50 125ºC di/dt=800A/us 60 Qrr (nC) 0 S 0 1 S 125ºC 5 0 0 200 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com