AOSMD AO4926

AO4926
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
Features
FET1
FET2
VDS (V) = 30V
VDS(V) = 30V
ID=7.3A (VGS = 10V)
ID = 9.5A
RDS(ON) < 13.5mΩ <24mΩ
(VGS = 10V)
<29mΩ
(VGS = 4.5V)
RDS(ON) < 16mΩ
The AO4926 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost efficiency
further. Standard Product AO4926 is Pb-free (meets
ROHS & Sony 259 specifications).
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1 Max FET2
VDS
Drain-Source Voltage
30
30
VGS
Gate-Source Voltage
±12
±12
Continuous Drain
9.5
7.3
TA=25°C
AF
Current
TA=70°C
7.8
5.9
IDSM
Pulsed Drain Current
B
Units
V
V
A
IDM
40
40
A
Avalanche Current B
IAR
22
12
A
Repetitive avalanche energy L=0.3mH B
EAR
mJ
TA=25°C
Power Dissipation
PDSM
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics FET1
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Thermal Characteristics FET2
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
73
22
2.0
2.0
1.3
1.3
°C
-55 to 150 -55 to 150
Symbol
RθJA
RθJL
Symbol
Alpha & Omega Semiconductor, Ltd.
W
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4926
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.5
VGS=4.5V, VDS=5V
40
ID(ON)
TJ=125°C
VGS=10V, ID=9.5A
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
IS
VDS=5V, ID=9.5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Max
0.02
0.1
10
20
0.1
µA
1.8
2.4
V
11
13.5
17.1
21.3
13
16.0
mΩ
0.5
V
4
A
2574
pF
30
IDSS
VGS(th)
Typ
V
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=9A
VGS=10V, VDS=15V, RL=1.6Ω,
RGEN=3Ω
mA
A
78
0.38
1980
VGS=0V, VDS=15V, f=1MHz
Units
mΩ
S
317
pF
111
pF
1.3
2.0
33.0
43
15.0
20
Ω
nC
5.3
nC
6.0
nC
5.5
ns
5.5
ns
27.0
ns
4.3
ns
trr
Body Diode Reverse Recovery Time
IF=9.5A, dI/dt=300A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=9.5A, dI/dt=300A/µs
7
13
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
80
VDS=5V
25
6V
4.5V
20
ID(A)
ID (A)
60
15
40
10
VGS=3.5V
20
5
0
125°
0
0
1
2
3
4
1
5
1.5
VDS (Volts)
16
2.5
3
3.5
4
Normalized On-Resistance
2
VGS=4.5V
14
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics
12
VGS=10V
10
8
VGS=10V
ID=9.5A
1.8
1.6
VGS=4.5V
1.4
ID=7A
1.2
1
0.8
0
5
10
15
20
25
30
0
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
1.0E+02
1.0E+01
ID=9.5A
25
125°C
1.0E+00
125°C
20
IS (A)
RDS(ON) (mΩ )
25°C
15
25°C
1.0E-01
1.0E-02
1.0E-03
10
25°C
1.0E-04
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
2500
VDS=15V
ID=9.5A
6
Capacitance (pF)
VGS (Volts)
8
4
Ciss
2000
1500
1000
Crss
2
500
0
Coss
0
0
5
10
15
20
25
30
35
40
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
DYNAMIC PARAMETERS
100.0
90
100µs
RDS(ON)
limited
70
1ms
1.0
10s
1s
DC
0.1
TJ(Max)=150°C
TA=25°C
80
10ms
Power (W)
10.0
ID (Amps)
30
100
10µs
60
50
40
30
TJ(Max)=150°C
TA=25°C
20
10
0.0
0.01
0.1
1
VDS (Volts)
10
0
0.0001
100
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
1.0E-02
20A
0.8
VDS=24V
0.7
VSD(V)
IR (A)
1.0E-03
VDS=12V
1.0E-04
0.6
0.5
10A
5A
0.4
0.3
1.0E-05
0.2
IS=1A
0.1
1.0E-06
0
DYNAMIC
50
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
PARAMETERS
Junction Temperature
25
8
20
2.5
trr (ns)
4
Irm (A)
125ºC
di/dt=800A/us
12
25ºC
Qrr
10
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
15
6
15
50
125ºC
di/dt=800A/us
Qrr (nC)
0
Irm
2
125ºC
9
1.5
trr
S
0
25ºC
6
1
25ºC
25ºC
2
5
S
3
0.5
125ºC
0
0
0
5
10
15
20
25
10
125ºC
7
6
5
125º
10
25ºC
5
Qrr
4
3
0
0
200
400
600
800
0
1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
25
30
2.5
25ºC
2
9
1.5
trr
25ºC
6
1
2
1
Irm
20
Is=20A
125ºC
12
trr (ns)
Qrr (nC)
25ºC
15
15
3
15
8
Is=20A
10
18
9
Irm (A)
20
5
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
0
0
30
S
0
3
0
0
200
0.5
S
125ºC
400
600
800
0
1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
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AO4926
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
0.002
1
30
VDS=30V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
V
TJ=55°C
VGS=10V, ID=7.3A
5
1
VGS=4.5V, ID=6A
23.5
29
mΩ
48
mΩ
VGS=2.5V, ID=5A
34.7
26
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
Qgs
Gate Source Charge
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
0.71
900
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=7.3A
VGS=10V, VDS=15V, RL=2Ω,
RGEN=6Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs
IF=7.3A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
mΩ
S
1
V
2.8
A
1100
pF
88
pF
65
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgd
V
24
VDS=5V, ID=7.3A
Rg
1.5
35
Forward Transconductance
Reverse Transfer Capacitance
nA
20
gFS
Output Capacitance
100
28
TJ=125°C
Static Drain-Source On-Resistance
Coss
µA
A
RDS(ON)
Crss
Units
pF
0.95
1.5
Ω
10
12
nC
1.8
nC
3.75
nC
3.2
ns
3.5
ns
21.5
ns
2.7
ns
16.8
21
8
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 1: June 2007
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
20
10V
50
40
3V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
30
2.5V
125°C
8
20
25°C
10
4
VGS=2V
0
0
0
1
2
3
4
5
0
VDS (Volts)
Figure 1: On-Region Characteristics
1.5
2
2.5
3
Normalized On-Resistance
1.8
VGS=4.5V
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics
30
25
20
VGS=10V
15
ID=6A
VGS=4.5V
1.5
1.2
VGS=10V
ID=7.3A
0.9
0.6
0
5
10
15
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100 125 150 175
1.0E+01
55
1.0E+00
50
ID=7.3A
1.0E-01
40
125°C
IS (A)
45
35
-25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
RDS(ON) (mΩ )
0.5
125°C
1.0E-02
1.0E-03
30
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
25°C
OR USES AS CRITICAL
25
1.0E-04 MARKET. APPLICATIONS
20
1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°COF ITS PRODUCTS. AOS RESERVES
OUT OF SUCH APPLICATIONS OR USES
15
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4926
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=7.3A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1000
800
600
400
Crss
1
Coss
200
0
0
0
2
4
6
8
10
12
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
100µs
1ms
1.00
10s
1s
DC
0.10
TJ(Max)=150°C
TA=25°C
40
Power (W)
ID (Amps)
RDS(ON)
limited
30
50
10µs
10.00
10
30
20
10
TJ(Max)=150°C
TA=25°C
0
0.01
0.01
0.1
1
VDS (Volts)
10
0.0001 0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED
FOR
OR USES AS CRITICAL
D
D=T
/TTHE CONSUMER MARKET.PAPPLICATIONS
on
COMPONENTS
ARE
NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
0.01 IN LIFE SUPPORT DEVICES OR SYSTEMS
TJ,PK=T
A+PDM.ZθJA.RθJA
T
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS
PRODUCT DESIGN,
RθJA=62.5°C/WRESERVES THE RIGHT TOonIMPROVE
T
Single
Pulse NOTICE.
FUNCTIONS AND RELIABILITY
WITHOUT
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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