AO4940 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4940 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4940 is Pb-free (meets ROHS & Sony 259 specifications). FET1 VDS (V) = 30V ID = 9.1A RDS(ON) < 15mΩ RDS(ON) < 23mΩ SOIC-8 FET2 V DS(V) = 30V I D=7.5A (VGS = 10V) < 23mΩ (V GS = 10V) < 36mΩ (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Max FET1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Symbol VDS 10 sec TA=70°C IDSM 10 sec 30 Steady-State 30 ±20 VGS TA=25°C Steady-State Max FET2 ±20 Units V V 9.1 7.6 7.5 6.2 7.3 6.1 6.0 5.0 A Pulsed Drain Current B IDM 100 50 A Avalanche Current B IAR 17 13 A Repetitive avalanche energy L=0.3mH B TA=25°C Power DissipationA TA=70°C 43 EAR PDSM 25 mJ 2 1.4 2 1.4 1.3 0.9 1.3 0.9 -55 to 150 -55 to 150 °C Thermal Characteristics FET1(Intergrated Schottky Diode) Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State Steady-State RθJL Maximum Junction-to-Lead C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Thermal Characteristics FET2 Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State Steady-State RθJL Maximum Junction-to-Lead C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. TJ, TSTG W www.aosmd.com AO4940 FET1(Intergrated Schottky Diode) Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 100 TJ=125°C VGS=10V, ID=9.1A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=7.3A gFS Forward Transconductance VDS=5V, ID=9.1A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 10 VGS=0V, VDS=0V, f=1MHz 0.1 µA 2.5 V 12.5 15 18 22 18.5 23 mΩ 0.5 V 3 A 1100 pF A 26 0.43 225 pF 91 pF 3.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.3 20 Qg(4.5V) Total Gate Charge 7.8 10 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=300A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V,RL=1.65Ω, RGEN=3Ω IF=9.1A, dI/dt=300A/µs mΩ S 1.7 VGS=10V, VDS=15V, ID=9.1A mA 1.65 903 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ Ω nC 2.0 nC 3.9 nC 5.0 ns 9.2 ns 17.8 ns 4.4 ns 17 20 30.0 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 0: Mar. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4940 FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 20 60 ID(A) ID (A) 4.5V 15 4V 40 10 125° 20 25°C 5 VGS=3V 0 0 0 1 2 3 4 1 5 2 VDS (Volts) 25 5 Normalized On-Resistance 1.8 VGS=4.5V 20 RDS(ON) (mΩ ) 4 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 15 10 VGS=10V 5 ID=9.1A VGS=10V 1.6 1.4 ID=7.3A 1.2 VGS=4.5V 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 45 1.0E+02 40 1.0E+01 ID=9.1A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ ) 3 125°C 25 25°C 1.0E-01 1.0E-02 20 1.0E-03 15 1.0E-04 10 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4940 FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=15V ID=9.1A 1200 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 800 600 400 Coss 2 Crss 200 0 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 100.0 TJ(Max)=150°C TA=25°C 80 RDS(ON) limited 10.0 10µs 100µ 1m 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 DC 1 VDS (Volts) Power (W) ID (Amps) 5 1s 10s 10 60 40 20 0 0.0001 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4940 FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 50 VGS=10V, ID=7.5A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=7.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz µA ±100 nA 1.6 2.5 V 19 23 27 34 29 36 mΩ 1 V 3 A 820 pF A 22 0.75 621 VGS=0V, VDS=15V, f=1MHz Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ mΩ S 118 pF 85 pF 0.8 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11.3 17 nC Qg(4.5V) Total Gate Charge 5.7 8.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=7.5A 2.1 nC 3 nC 4.5 ns VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω 3.1 ns 15.1 ns IF=7.5A, dI/dt=100A/µs 15.5 Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs 7.1 Body Diode Reverse Recovery Time 2.7 ns 21 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 0: Mar. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4940 FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 6V 50 VDS=5V 16 12 4.5V ID(A) ID (A) 40 30 8 20 125°C VGS=3.5V 4 10 0 25°C 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 40 Normalized On-Resistance 1.6 VGS=4.5V 35 RDS(ON) (mΩ ) 2.5 30 25 20 15 VGS=10V 10 VGS=10V 1.4 1.2 VGS=4.5V 1 0.8 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=7.5A 1.0E+00 1.0E-01 40 IS (A) RDS(ON) (mΩ ) 50 125°C 125°C 1.0E-02 25°C AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com