AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOL1454 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 40V ID = 50A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View Fits SOIC8 footprint ! D D S Bottom tab connected to drain G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C H Continuous Drain Current A Units V ±20 V 50 ID IDM TC=100°C Pulsed Drain Current Maximum 40 C A 48 100 TA=25°C 17 A 13 Avalanche Current C IDSM IAR 30 A Repetitive avalanche energy L=0.3mH C EAR 135 mJ TA=70°C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C Junction and Storage Temperature Range 5.0 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 3.2 TJ, TSTG t ≤ 10s Steady-State Steady-State W 30 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient D Maximum Junction-to-Case 60 PD RθJA RθJC Typ 20 50 1.8 °C Max 25 60 2.5 Units °C/W °C/W °C/W www.aosmd.com AOL1454 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 100 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=4.5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 2 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 3 V 9.0 mΩ 10 10.3 13 mΩ 1 V 50 A 1920 pF 47 0.7 1600 VGS=0V, VDS=20V, f=1MHz uA A 7.5 TJ=125°C Forward Transconductance uA 5 ±100 VGS=10V, ID=20A VSD Units V VDS=40V, VGS=0V Zero Gate Voltage Drain Current gFS Max 40 IDSS IS Typ S 320 pF 100 pF 3.4 Ω 22 nC 10.5 nC 4.2 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time 12.5 ns 33 ns 16 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. Rev0: Oct 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V ID=250uA, VGS=0V 5V 80 -40°C VDS=5V 25°C 80 VDS=40V, V4V GS=0V 125°C 60 ±100 ID(A) ID (A) 60 40 40 VGS=3.5V 20 uA 20 VGS=3V -40°C 125°C 25°C 0 0 0 1 2 3 4 2 5 2.5 3.5 4 4.5 12 Normalized On-Resistance VGS=4.5V 10 9 8 VGS=10V 7 6 0 5 10 15 20 25 5.5 500 150 60 1.6 11 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (mΩ) 3 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 0.6 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+01 ID=20A 1.0E+00 25 IS (A) RDS(ON) (mΩ) 1.0E-01 20 15 125°C 1.0E-02 1.0E-03 125°C 10 1.0E-04 25°C -40°C 25°C 1.0E-05 5 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=20V ID=20A 2000 ID=250uA, VGS=0V VDS=40V, VGS=0V 6 4 Capacitance (pF) VGS (Volts) 8 Ciss 1600 ±100 1200 800 Coss Crss 2 400 0 0 4 8 12 16 20 0 24 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 10.0 500 150 60 140 1m 1.0 TJ(Max)=175°C TC=25°C 0.0 0.01 120 100 80 60 40 20 0.1 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C Tc=25°C 160 10ms DC 0.1 40 180 Power (W) ID (Amps) 5 200 10µs 100.0 ZθJC Normalized Transient Thermal Resistance uA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 100 ID=250uA, VGS=0V 80 VDS=40V, VGS=0V 60 TA=150°C TA=25°C 40 20 70 Power Dissipation (W) ID(A), Peak Avalanche Current 120 60 50 ±100 40 30 20 10 0 0.000001 0.00001 0.0001 0 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 75 100 125 150 175 500 150 60 100 90 50 TA=25°C 80 70 40 Power (W) Current rating ID(A) 50 TCASE (°C) Figure 13: Power De-rating (Note B) 60 30 20 60 50 40 30 20 10 10 0 0.001 0 0 25 50 75 100 125 150 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance uA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com