AOD603 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -60V VDS (V) = 60V ID = 12A (V GS=10V) -12A (VGS=-10V) RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115m Ω (VGS =- 10V) < 150m Ω (VGS = -4.5V) < 85mΩ (VGS=4.5V) The AOD603 uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOD603 is Pb-free (meets ROHS & Sony 259 specifications). AOD603L is a Green Product ordering option. AOD603 and AOD603L are electrically identical. TO-252 D-PAK D1 D2 Top View Drain Connected to Tab G2 G1 S2 S1 n-channel p-channel S1 G1 D1/D2 G2 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS 60 Drain-Source Voltage VGS Gate-Source Voltage ±20 Continuous Drain Current G Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range ±20 V 12 -12 12 -10 30 -30 IAR 12 -12 A EAR 23 23 mJ 20 37.5 10 18.8 PD TJ, TSTG A W 2 2.5 1.3 1.6 -55 to 175 -55 to 175 PDSM Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case B A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. Units V ID IDM TC=25°C TC=100°C Max p-channel -60 Symbol RθJA RθJC RθJA RθJC W °C Device n-ch n-ch n-ch Typ 17.4 50 4 Max 30 60 7.5 °C/W °C/W °C/W p-ch p-ch p-ch 16.7 40 2.5 25 50 4 °C/W °C/W °C/W AOD603 N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=12A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=12A µA 100 nA 2.4 3 V 47 60 mΩ 85 mΩ A 85 67 14 0.74 450 VGS=0V, VDS=30V, f=1MHz Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=48V, VGS=0V IGSS RDS(ON) Typ S 1 V 12 A 540 pF 61 pF 27 pF 1.35 2 Ω 7.5 10 nC 3.8 5 nC 1.2 nC 1.9 nC 4.2 ns VGS=10V, VDS=30V, RL=2.5Ω, RGEN=3Ω 3.4 ns 16 ns 2 ns IF=12A, dI/dt=100A/µs 27.6 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 35 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD603 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 7V 6V 20 VDS=5V 15 5V 15 ID(A) ID (A) 20 10V 4.5V 25°C VGS=4V 10 125°C 10 5 3.5V 5 0 0 0 1 2 3 4 2 5 2.5 80 4 4.5 5 Normalized On-Resistance 2.2 70 RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 60 VGS=10V 50 40 0 4 8 12 16 20 2 VGS=10V, 12A 1.8 1.6 VGS=4.5V,6A 1.4 1.2 1 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 140 1.0E+00 ID=12A 120 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 3 100 80 1.0E-02 25°C 1.0E-03 25°C 60 1.0E-04 40 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD603 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 Capacitance (pF) 8 VGS (Volts) 600 VDS=30V ID=12A 6 4 2 Ciss 500 400 300 Coss 200 100 0 0 2 4 6 0 8 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 10.0 1ms 10ms DC 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=175°C TA=25°C 120 80 40 0.1 0.1 10 160 100µs 1.0 5 200 TJ(Max)=175°C, TA=25°C Power (W) ID (Amps) 100.0 Crss 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD603 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 12 tA = 10 L ⋅ ID BV − V DD Power Dissipation (W) ID(A), Peak Avalanche Current 14 8 6 4 TA=25°C 2 0 0.00001 20 15 10 5 0 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 125 150 175 50 12 TA=25°C 40 10 Power (W) Current rating ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) 14 8 6 4 30 20 10 2 0 0.001 0 0 25 50 75 100 125 150 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 50 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.001 0.00001 PD Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD603 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -60 VDS=-48V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 VGS=-10V, ID=-12A TJ=125°C Static Drain-Source On-Resistance VGS=-4.5V, ID=-6A gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-12A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr Body Diode Reverse Recovery Time -0.003 -1 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-12A VGS=-10V, VDS=-30V, RL=2.5Ω, RGEN=3Ω IF=-12A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs µA ±100 nA -2.1 -3 V 91 115 A 150 114 150 12.8 -0.76 987 VGS=0V, VDS=-30V, f=1MHz Units V -5 VGS(th) IS Max TJ=55°C IGSS RDS(ON) Typ mΩ mΩ S -1 V -12 A 1185 pF 114 pF 46 pF 7 10 Ω 15.8 20 nC 7.4 9 nC 3 nC 3.5 nC 9 ns 10 ns 25 ns 11 ns 27.5 35 30 ns nC A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD603 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) 30 10 -10V 25 -6V -7V VDS=-5V 8 -5V -4.5V 15 -ID(A) -ID (A) 20 VGS=-4V 10 6 125°C 4 25°C -3.5V 5 2 -3V 0 0 0 1 2 3 4 0 5 1 220 4 5 2 180 Normalized On-Resistance 200 RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 160 140 VGS=-10V 120 100 80 0 5 VGS=-10V ID=-12A 1.8 1.6 VGS=-4.5V ID=-6A 1.4 1.2 1 0.8 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 300 ID=-12A 1.0E+00 250 1.0E-01 125°C 200 -IS (A) RDS(ON) (mΩ) 2 150 25°C 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 100 1.0E-05 1.0E-06 50 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD603 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) 1200 10 Ciss VDS=-30V ID=-12A A Capacitance (pF) -VGS (Volts) 8 1000 6 4 400 Crss 200 0 0 0 4 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0 16 10.0 100µs 1ms 10ms 1.0 DC 1 10 100 30 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W TJ(Max)=175°C TA=25°C 120 80 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 40 0.1 0.1 10 160 Power (W) RDS(ON) limited 5 200 TJ(Max)=175°C, TA=25°C 10µs -ID (Amps) 600 Coss 2 ZθJC Normalized Transient Thermal Resistance 800 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD603 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) 40 tA = 12 L⋅ ID BV − VDD Power Dissipation (W) -ID(A), Peak Avalanche Current 14 10 8 TA=25°C 30 20 10 0 6 0.00001 0.0001 0 0.001 25 60 12 50 10 Power (W) Current rating -ID(A) 14 8 6 4 75 100 125 150 175 TA=25°C 40 30 20 10 2 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000