AOL1722 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1722/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AOL1722 and AOL1722L are electrically identical. -RoHS Compliant -AOL1722L is Halogen Free VDS (V) = 30V (V GS = 10V) ID =65A RDS(ON) < 4.5mΩ (V GS = 10V) RDS(ON) < 5.8mΩ (V GS = 4.5V) Ultra SO-8TM Top View Fits SOIC8 footprint ! D D S Bottom tab connected to drain G G S Absolute Maximum Ratings T C=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=100°C Units V ±12 V A 65 ID IDM Pulsed Drain Current C 80 TA=25°C Continuous Drain Current A Maximum 30 65 TC=25°C Continuous Drain Current B, H SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode 15 A 12 Avalanche Current C IDSM IAR 38 A Repetitive avalanche energy L=0.3mH C EAR 217 mJ TA=70°C TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range 2.1 TJ, TSTG A t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 1.3 -55 to 175 Symbol A W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient D Maximum Junction-to-Case 100 RθJA RθJC Typ 19.6 50 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AOL1722 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 On state drain current VGS=10V, VDS=5V 80 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode + Schottky Diode Continuous Current Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 20 VDS=0V, VGS= ±12V 1.8 nA 2.5 V A 3.8 4.5 6.6 VGS=4.5V, ID=20A 4.4 5.8 VDS=5V, ID=20A 90 0.36 H 3956 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mA ±100 5.5 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V TJ=125°C VGS=10V, ID=20A Crss Units 0.1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ mΩ S 0.5 V 65 A 5620 pF 630 pF 270 pF 0.72 1.2 Ω 73 95 nC 35 nC 10.4 nC Gate Drain Charge 12.4 nC Turn-On DelayTime 9.8 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.4 ns 45 ns 10 trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 32 ns 43 ns nC A: The value of RθJA is measured with the device in a still air environment with TA=25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. Rev0: March. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1722 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 100 VDS=5V 10V 80 4.5V 60 3.5V 40 ID(A) ID (A) 60 VGS=3.0V 40 125°C 20 20 25°C 0 0 0 0.5 1 1.5 2 2.5 3 1 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 5 4 Normalized On-Resistance 1.9 VGS=4.5V 4.5 RDS(ON) (mΩ) 2 4 VGS=10V 3.5 3 ID=20A 1.7 VGS=10V 1.5 VGS=4.5V 1.3 1.1 0.9 0.7 0 5 10 15 20 25 30 -40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 10 35 60 85 110 135 160 185 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 12 100 10 10 8 1 IS (A) RDS(ON) (mΩ) ID=20A 125°C 6 125°C 0.1 25°C 4 0.01 25°C 2 0.001 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1722 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Capacitance (nF) VGS (Volts) 8 6 4 2 Ciss 4000 3000 2000 Coss Crss 1000 0 0 0 10 20 30 40 50 60 70 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10000 TJ(Max)=175°C TC=25°C 100µ RDS(ON) limited 10.0 10ms 100ms Power (W) ID (Amps) 1ms 1000 100 DC 1.0 TJ(Max)=175°C TC=25°C 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc .RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1722 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 TC=25°C 60 40 100 80 60 40 20 0 20 1.0E-06 1.0E-05 1.0E-04 0 1.0E-03 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 80 100 TJ(Max)=150°C TA=25°C 80 60 Power (W) Current rating ID(A) 25 40 20 60 40 20 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJc .RθJc RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com