JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) CLASSIFICATION OF hFE(1) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 µA, IC=0 -6 V Collector cut-off current ICBO VCB= -40 V, IE=0 -1 µA Collector cut-off current ICEO VCE=-30 V, IB=0 -10 µA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 µA hFE(1) VCE= -2V, IC= -1A 60 hFE(2) VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V 400 DC current gain VCE= -5V, Transition frequency C=-0.1A fT 50 MHz f = 10MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400