JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR (NPN) SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 0. 35 1. 9 1. 60¡ À0. 05 2. 92¡ À0. 05 PCM: 1. 02 Power dissipation TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 100µA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 µA Emitter cut-off current IEBO VEB= 6V , 0.1 µA hFE(1) IC=0 VCE=6V, IC=1mA 150 800 hFE(2) VCE=6V, IC=0.1mA 50 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V DC current gain fT Transition frequency VCE=6V, IC= 10mA 180 MHz CLASSIFICATION OF hFE(1) Marking Range LE LF LG 150-300 250-500 400-800