DATA SHEET GaAs HBT INTEGRATED CIRCUIT μPG2318T5N ED 2.4 GHz SINGLE BAND POWER AMPLIFIER FOR W-LAN DESCRIPTION The μPG2318T5N is a GaAs HBT MMIC power amplifier for 2.4 GHz band wireless LAN. This device realizes high efficiency, high gain and high output power by using InGaP HBT. IN U This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package, and is suitable for high-density surface mounting. FEATURES • Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Control voltage : Venable = 0 to 3.0 V (2.8 V TYP.) • Supply voltage : VCC1, 2 = 3.0 to 4.6 V (3.3 V TYP.) • Circuit current : ICC = 120 mA TYP. @ VCC1, 2 = 3.3 V, Venable = 2.8 V, Pout = +18 dBm (at OFDM modulation : 64QAM/54 Mbps) : GP = 28 dB TYP. @ VCC1, 2 = 3.3 V, Venable = 2.8 V, NT • Power gain Pout = +18 dBm (at OFDM modulation : 64QAM/54 Mbps) • Gain flatness : ΔGP = 0.8 dB TYP. @ f = 2.4 to 2.5 GHz, VCC1, 2 = 3.3 V, Venable = 2.8 V, • Error vector magnitude • Harmonics Pout = +18 dBm (at OFDM modulation : 64QAM/54 Mbps) : EVM = 2.5% TYP. @ VCC1, 2 = 3.3 V, Venable = 2.8 V, Pout = +18 dBm (at OFDM modulation : 64QAM/54 Mbps) : 2f0 = 30 dBc TYP. @ VCC1, 2 = 3.3 V, Venable = 2.8 V, SC O Pout = +18 dBm (at OFDM modulation : 64QAM/54 Mbps) • High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm) APPLICATIONS • Power Amplifier for 802.11b/g • 2.4 GHz ISM Band Transceivers ORDERING INFORMATION Order Number μPG2318T5N-E2 μPG2318T5N-E2-A DI Part Number Package 6-pin plastic TSON (Pb-Free) Marking G5G Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μPG2318T5N-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PG10668EJ02V0DS (2nd edition) Date Published July 2007 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2007 μPG2318T5N PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 2 3 G5G 1 (Bottom View) (Top View) Bias Circuit 6 6 2 5 5 3 4 4 6 1 5 4 1 Pin No. Pin Name 1 Venable 2 INPUT 3 VCC1 4 OUTPUT 5 VCC2 6 Vdet ED (Top View) 2 3 Remark Exposed pad : GND Parameter IN U ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Symbol Supply Voltage VCC1, 2 Control Voltage Venable Pin Power Dissipation PD Operating Ambient Temperature TA Storage Temperature Tstg Unit 5.0 V 4.0 V +10 dBm 500 mW Note −45 to +85 °C −55 to +150 °C NT Input Power Ratings Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit fopt 2 400 2 450 2 500 MHz Supply Voltage VCC1, 2 3.0 3.3 4.6 V Control Voltage Venable 0 2.8 3.0 V DI SC O Operating Frequency 2 Data Sheet PG10668EJ02V0DS μPG2318T5N ELECTRICAL CHARACTERISTICS (TA = +25°C, f = 2 400 to 2 500 MHz, OFDM modulation : 64QAM/54 Mbps, VCC1, 2 = 3.3 V, Venable = 2.8 V, external input and output matching, unless otherwise specified) Symbol Test Conditions ICC Pout = +18 dBm Power Gain GP Pout = +18 dBm Gain Flatness ΔGP Pout = +18 dBm Control Current Ienable Pout = +18 dBm Error Vector Magnitude EVM Pout = +18 dBm Input Return Loss RLin Pout = −30 dBm (no-modulation) Output Return Loss RLout Pout = −30 dBm (no-modulation) TYP. MAX. Unit − 120 140 mA 25.5 28 − dB − 0.8 1.3 dB − 3.2 − mA − 2.5 − % − 15 − dB − 5 − dB IN U Circuit Current MIN. ED Parameter 2f0 Pout = +18 dBm − 30 − dBc 3rd Harmonics 3f0 Pout = +18 dBm − 48 − dBc Power Detector Voltage Vdet Pout = +18 dBm − 0.7 − V DI SC O NT 2nd Harmonics Data Sheet PG10668EJ02V0DS 3 μPG2318T5N EVALUATION CIRCUIT 1 100 pF INPUT Bias Circuit 6 1 000 pF 2 5 3 4 VCC2 OUTPUT 2.2 nH IN U 0.1 μF 2 kΩ 0.1 μF 2.7 nH VCC1 Vdet ED Venable SC O NT The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. DI <R> 4 Data Sheet PG10668EJ02V0DS μPG2318T5N –5 7 18 6 15 5 12 4 3 ICC/10 6 EVM 3 0 2 0 5 10 1 15 20 0 25 30 POWER GAIN, CIRCUIT CURRENT, EVM vs. OUTPUT POWER 27 10 8 7 21 6 18 5 15 12 4 ICC/10 9 3 2 6 3 0 EVM 0 5 10 3 –20 –25 –30 2 2f0 –35 –40 15 Vdet –45 0 5 10 15 20 2f0, CONTROL CURRENT, Vdet, vs. OUTPUT POWER 0 f = 2.40 GHz 2.45 GHz 2.50 GHz –5 NT 9 GP 24 4 1 0 25 Output Power Pout (dBm) SC O Power Gain GP (dB), Circuit Current ICC/10 (mA) Output Power Pout (dBm) Ienable –15 –50 5 f = 2.40 GHz 2.45 GHz 1 2.50 GHz 0 20 25 –10 Ienable –15 –20 5 4 3 –25 2f0 –30 2 –35 –40 1 –45 –50 Vdet 0 Output Power Pout (dBm) 5 10 15 20 Control Current Ienable (mA), Power Detector Voltage Vdet (V) 9 –10 IN U 8 21 f = 2.45 GHz Control Current Ienable (mA), Power Detector Voltage Vdet (V) 0 9 2f0, CONTROL CURRENT, Vdet, vs. OUTPUT POWER ED GP 24 10 2nd Harmonics 2f0 (dBc) f = 2.45 GHz 27 2nd Harmonics 2f0 (dBc) 30 Error Vector Magnitude EVM (%) POWER GAIN, CIRCUIT CURRENT, EVM vs. OUTPUT POWER Error Vector Magnitude EVM (%) Power Gain GP (dB), Circuit Current ICC/10 (mA) TYPICAL CHARACTERISTICS 1 (TA = +25°C, VCC1, 2 = 3.3 V, Venable = 2.8 V, OFDM modulated signal : 64QAM/54 Mbps, with external input and output matching circuits, unless otherwise specified) 0 25 Output Power Pout (dBm) DI Remark The graphs indicate nominal characteristics. Data Sheet PG10668EJ02V0DS 5 μPG2318T5N TYPICAL CHARACTERISTICS 2 (TA = +25°C, f = 2.45 GHz, OFDM modulated signal : 64QAM/54 Mbps, with external input and output matching circuits, unless otherwise specified) 7 18 6 15 5 12 4 3 6 3 0 2 Venable = 2.7 V 2.8 V 1 2.9 V 0 20 25 EVM 5 10 15 POWER GAIN, EVM vs. OUTPUT POWER 9 GP 24 8 7 21 6 18 5 15 12 4 EVM 9 3 2 SC O 6 3 0 5 10 15 15 7 5 ICC/10 12 9 6 4 Vdet 3 0 5 10 15 20 CIRCUIT CURRENT, Vdet, vs. OUTPUT POWER 30 Venable = 2.8 V 27 VCC = 3.0 V 3.3 V 1 4.2 V 0 20 25 VCC = 3.0 V 3.3 V 4.2 V 24 21 3 2 1 0 25 7 5 ICC/10 12 4 3 9 6 2 Vdet 3 5 DI Remark The graphs indicate nominal characteristics. Data Sheet PG10668EJ02V0DS 9 6 15 0 10 8 18 Output Power Pout (dBm) 6 8 6 18 NT 27 Power Gain GP (dB) 10 Venable = 2.8 V 21 Output Power Pout (dBm) Output Power Pout (dBm) 30 24 10 15 1 20 Output Power Pout (dBm) 0 25 Power Detector Voltage Vdet (V) 9 10 9 Venable = 2.7 V 2.8 V 2.9 V IN U 8 21 VCC1 = VCC2 = 3.3 V Power Detector Voltage Vdet (V) 27 Circuit Current ICC/10 (mA) 24 30 9 Circuit Current ICC/10 (mA) Power Gain GP (dB) GP 10 Error Vector Magnitude EVM (%) VCC1 = VCC2 = 3.3 V 27 Error Vector Magnitude EVM (%) 30 CIRCUIT CURRENT, Vdet, vs. OUTPUT POWER ED POWER GAIN, EVM vs. OUTPUT POWER μPG2318T5N S-PARAMETERS (Reference Data) –This data is included external matching components– Condition : TA = +25°C, f = 0.1 to 8.1 GHz, VCC1, 2 = 3.3 V, Venable = 2.8 V, Pin = −30 dBm S21-FREQUENCY S11-FREQUENCY 1: –15.41 dB 2: –16.03 dB 3: –14.79 dB 4: –4.39 dB 1 23 0 dB 4 4 10 dB/div STOP 8.1 GHz S12-FREQUENCY START 0.1 GHz –34.79 dB –35.02 dB –34.80 dB –30.19 dB 0 dB 0 dB 1 4 10 dB/div SC O 23 START 0.1 GHz 10 dB/div STOP 8.1 GHz S22-FREQUENCY NT 1: 2: 3: 4: IN U 23 START 0.1 GHz 26.08 dB 26.44 dB 25.59 dB –4.49 dB ED 0 dB 1: 2: 3: 4: 1 STOP 8.1 GHz 1 23 START 0.1 GHz 1: 2: 3: 4: –5.13 dB –4.80 dB –5.51 dB –0.66 dB 4 5 dB/div STOP 8.1 GHz Remark 1. The graphs indicate nominal characteristics. 2. Marker1 : 2.45 GHz Marker2 : 2.40 GHz Marker3 : 2.50 GHz Marker4 : 4.90 GHz DI <R> Data Sheet PG10668EJ02V0DS 7 μPG2318T5N MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) 0.3 0.2 0.5 IN U 1.0 0.5 0.3 0.5 0.3 ED MOUNTING PAD 0.3 NT SOLDER MASK 0.15 0.5 0.475 0.35 0.5 0.25 0.55 SC O 0.475 0.25 Solder thickness : 0.08 mm DI Remark The mounting pad and solder mask layouts in this document are for reference only. 8 Data Sheet PG10668EJ02V0DS μPG2318T5N PACKAGE DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) (Top View) (Bottom View) (Side View) 1.2±0.1 IN U 0.5±0.06 0.2+0.07 –0.05 1.5±0.1 ED 0.3±0.07 1.5±0.1 0.2±0.1 0.7±0.1 DI SC O NT 0.37+0.03 –0.05 Data Sheet PG10668EJ02V0DS 9 μPG2318T5N RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Time at temperature of 220°C or higher Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Condition Symbol Peak temperature (molten solder temperature) IR260 ED Infrared Reflow Soldering Conditions For soldering : 60 seconds or less : 3 times : 0.2%(Wt.) or below : 260°C or below Time at peak temperature : 10 seconds or less Maximum number of flow processes : 1 time Peak temperature (terminal temperature) : 350°C or below Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 IN U Preheating temperature (package surface temperature) : 120°C or below Maximum chlorine content of rosin flux (% mass) Partial Heating Soldering time (per side of device) : 0.2%(Wt.) or below : 3 seconds or less DI SC O NT Caution Do not use different soldering methods together (except for partial heating). 10 Data Sheet PG10668EJ02V0DS HS350 ED μPG2318T5N SC O NT IN U • The information in this document is current as of July, 2007. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 Data Sheet PG10668EJ02V0DS 11 μPG2318T5N Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. ED 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. 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