SILICON RFIC LOW CURRENT AMPLIFIER UPC8179TB FOR MOBILE COMMUNICATIONS FEATURES POWER GAIN vs. FREQUENCY • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm) +20 VCC = 3.0 V • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V 2.4 GHz TA = -40°C TA = +25°C +10 TA = +85°C • HIGH EFFICIENCY: PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz 0 –10 • POWER GAIN: GP = 13.5 dB TYP at f = 1.0 GHz GP = 15.5 dB TYP at f = 1.9 GHz GP = 15.5 dB TYP at f = 2.4 GHz –20 • EXCELLENT ISOLATION: ISL = 44 dB TYP at f = 1.0 GHz ISL = 42 dB TYP at f = 1.9 GHz ISL = 41 dB TYP at f = 2.4 GHz –40 • LOW CURRENT CONSUMPTION: ICC = 4.0 mA TYP AT VCC = 3.0 V • OPERATING FREQUENCY: ICC = 4.0 mA TYP AT VCC = 3.0 V • LIGHT WEIGHT: 7 mg (standard Value) APPLICATIOIN • Buffer amplifiers for 0.1 to 2.4 GHz mobile communications systems. ELECTRICAL CHARACTERISTICS, 1.0 GHz –30 1.9 GHz 0.1 0.3 1.0 3.0 Output match for best performance at each frequency DESCRIPTION NEC's UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can be realized on internal 50Ω wideband matched IC. This low current amplifier uns on 3.0 V. This IC is manufactured using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has exellent performance uniformity and reliability. (Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPC8179TB S06 UNITS MIN TYP MAX ICC Circuit Current (no input signal) mA 2.9 4.0 5.4 GP Power Gain, f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm dB 11.0 13.0 13.0 13.5 15.5 15.5 15.5 17.5 17.5 ISOL Isolation, f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm dB 39.0 37.0 36.0 44.0 42.0 41.0 – – – P1dB Output Power at 1 dB gain compression, f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz dB -0.5 -2.0 -3.0 3.0 1.5 1.0 – – – Noise Figure, f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz dB – – – 5.0 5.0 5.0 6.5 6.5 6.5 Input Return Loss, (without matching circuit) f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm dB 4.0 4.0 6.0 7.0 7.0 9.0 – – – NF RLIN California Eastern Laboratories UPC8179TB ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage, Pins 4 & 6 V 3.6 SYMBOLS ICC Circuit Current mA 15 VCC mW 270 TA °C -40 to +85 °C -55 to +150 dBm +5 Dissipation2 PD Power TOP Operating Temperature TSTG Storage Temperature PIN Input Power PARAMETERS UNITS MIN TYP MAX Supply Voltage V 2.7 3.0 3.3 Operating Ambient Temperature °C -40 +25 +85 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C). PIN FUNCTIONS Pin No. Symbol 1 INPUT Pin Voltage Description Signal Input Pin. A internal matching circuit, configured with resistors, enable 50 W connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. 1.09 V 2 3 5 GND through external inductor 4 OUTPUT Same as VCC voltage 6 VCC Internal Equivalent Circuit 6 4 Ground pin. This pin should be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 2 Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with matching LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. 1 3 5 Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. 2.4 to 3.3 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C) CIRCUIT CURRENT vs. TEMPERATURE CIRCUIT CURRENT vs. VOLTAGE 5 5 No signals Vcc = 3.0 V 4 Circuit Current, ICC (mA) Circuit Current, ICC (mA) No signals 3 2 1 0 4 3 2 1 0 0 1 2 Voltage, VCC (V) 3 4 –60 –40 –20 0 +20 +40 +60 Temperature, TA (°C) +80 +100 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C) 1.0 GHz Output Port Matching ISOLATION vs. FREQUENCY GAIN vs. FREQUENCY – 10 +20 Vcc = 3.0 V VCC = 3.0 V TA = –40 ºC –20 Isolation, ISOL (dB) Gain, GP (dB) +10 0 TA = +25 ºC –10 TA = +85ºC –20 –30 TA = –40 ºC TA = +25ºC –40 –50 –60 –30 TA = +85 ºC –70 –40 0.1 0.3 0.1 3.0 1.0 0.3 1.0 Frequency, f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY +5 0 VCC = 3.0 V Output Return Loss, RLOUT (dBm) Input Return Loss, RLIN (dB) Vcc = 3.0 V TA = +85 ºC –5 –10 TA = +25 ºC TA = –40 ºC –15 –20 –25 –30 0 TA = –40ºC –5 TA = +25ºC –10 TA = +85ºC –15 –20 –25 0.1 0.3 1.0 0.1 3.0 0.3 3.0 1.0 Frequency, f (GHz) Frequency, f (GHz) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE OUTPUT POWER vs. INPUT POWER +10 0 Thirf Order Intermodulation Distortion, IM3 (dBc) VCC = 3.0 V +5 Output Power, POUT (dBm) 3.0 Frequency, f (GHz) TA = –40ºC 0 TA = +85ºC –5 TA = +25ºC –10 –15 –20 –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power, PIN (dBm) 0 +5 f1 = 1 000 MHz f2 = 1 001 MHz -10 -20 Vcc = 2.4 V -30 Vcc = 3.0 V -40 Vcc = 3.3 V -50 -60 –20 –15 –10 –5 0 +5 Output Power of Each Tone, POUT (dBm) TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C) 1.0 GHz Output Port Matching NOISE FIGURE vs. VOLTAGE 6.0 TA = +85 ºC Noise Figure, NF (dB) 5.5 5.0 TA = +25 ºC 4.5 4.0 TA = –40 ºC 3.5 3.0 2.0 2.5 3.0 3.5 Voltage, VCC (V) 1.9 GHz Output Port Matching ISOLATION vs. FREQUENCY GAIN vs. FREQUENCY –10 +20 Vcc = 3.0 V Vcc = 3.0 V TA = –40ºC –20 +10 Isolation, ISOL (dB) Gain, GP (dB) TA = +25ºC 0 TA = +85ºC –10 –20 –30 TA = –40ºC TA = +25ºC –40 –50 TA = +85ºC –60 –30 –70 –40 0.1 0.3 1.0 0.1 3.0 3.0 +5 0 VCC = 3.0 V Output Return Loss, RLOUT (dBm) TA = +85ºC Input Return Loss, RLIN (dB) 1.0 OUTPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY –5 TA = +25ºC –10 TA = –40ºC –15 –20 –25 –30 0.3 Frequency, f (GHz) Frequency, f (GHz) Vcc = 3.0 V 0.1 0.3 1.0 Frequency, f (GHz) 3.0 0 –5 –10 TA = +85ºC –15 TA = +25ºC –20 TA = –40ºC –25 0.1 0.3 1.0 Frequency, f (GHz) 3.0 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C) 1.9 GHz Output Port Matching OUTPUT POWER vs. INPUT POWER +10 0 Thirf Order Intermodulation Distortion, IM3 (dBc) TA = –40ºC Output Power, POUT (dBm) +5 0 TA = +25ºC –5 –10 TA = +85ºC –15 –20 –25 VCC = 3.0 V –30 –40 –35 –30 –25 –20 –15 –10 –5 0 f1 = 1 900 MHz f2 = 1 901 MHz -10 -20 Vcc = 3.3 V -30 Vcc = 3.0 V Vcc = 2.4 V -40 -50 -60 –20 +5 –15 –10 –5 0 +5 Output Power of Each Tone, POUT (dBm) Input Power, PIN (dBm) NOISE FIGURE vs. VOLTAGE 5.5 Noise Figure, NF (dB) TA = +85 ºC 5.0 4.5 TA = +25 ºC 4.0 3.5 TA = –40 ºC 3.0 2.0 2.5 3.5 3.0 Voltage, VCC (V) 2.4 GHz Output Port Matching ISOLATION vs. FREQUENCY GAIN vs. FREQUENCY –10 +20 VCC = 3.0 V VCC = 3.0 V TA = –40ºC –20 +10 Isolation, ISOL (dB) Gain, GP (dB) TA = +25ºC 0 –10 –20 TA = +85ºC TA = +25ºC –30 –40 TA = –40ºC –50 –30 –60 –40 –70 TA = +85ºC 0.1 0.3 1.0 Frequency, f (GHz) 3.0 0.1 0.3 1.0 Frequency, f (GHz) 3.0 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C) 2.4 GHz Output Port Matching OUTPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY +5 0 VCC = 3.0 V Output Return Loss, RLOUT (dBm) TA = +85ºC Input Return Loss, RLIN (dB) –5 –10 TA = +25ºC –15 TA = –40ºC –20 –25 VCC = 3.0 V –30 0 –5 –10 TA = +85ºC –15 TA = +25ºC –20 TA = –40ºC –25 0.1 0.3 1.0 0.1 3.0 0.3 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE OUTPUT POWER vs. INPUT POWER +10 Thirf Order Intermodulation Distortion, IM3 (dBc ) 0 VCC = 3.0 V +5 Output Power, POUT (dBm) 3.0 Frequency, f (GHz) Frequency, f (GHz) 0 TA = +25ºC –5 –10 TA = –40ºC –15 –20 TA = +85ºC –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 0 +5 NOISE FIGURE vs. VOLTAGE 5.5 TA = +85ºC 5.0 4.5 TA = +25 4.0 TA = –40ºC 3.5 3.0 2.0 2.5 3.0 Voltage, VCC (V) f1 = 2 400 MHz f2 = 2 401 MHz -10 Vcc = 2.4 V -20 -30 Vcc = 3.0 V -40 Vcc = 3.3 V -50 -60 –20 –15 –10 –5 0 +5 Output Power of Each Tone, POUT (dBm) Input Power, PIN (dBm) Noise Figure, NF (dB) 1.0 3.5 UPC8179TB TYPICAL SCATTERING PARAMETERS (TA = 25˚C) 0.1 G 1.0 G 0.1 G 3.0 G 2.0 G 1.0 G 2.0 G 3.0 G Coordinates in Ohms Frequency in GHz S11 S22 VCC = VOUT = 3.0 V, ICC = 4.0 mA VCC = VOUT = 3.0 V, ICC = 4.0 mA FREQUENCY S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 0.824 0.692 0.594 0.533 0.499 0.474 0.460 0.450 0.441 0.438 0.431 0.426 0.427 0.417 0.413 0.408 0.398 0.387 0.380 0.366 0.352 0.341 0.330 0.320 0.304 0.296 0.285 0.272 0.267 0.256 0.248 -17.1 -25.9 -29.2 -30.7 -31.1 -32.0 -32.7 -34.0 -35.6 -37.7 -39.8 -42.0 -44.8 -48.1 -50.6 -54.6 -57.6 -61.6 -64.9 -69.1 -72.1 -75.6 -79.4 -82.4 -85.6 -88.2 -91.7 -94.3 -96.9 -99.5 -101.9 1.181 1.181 1.247 1.370 1.514 1.677 1.885 2.050 2.237 2.460 2.627 2.772 2.965 3.123 3.199 3.351 3.345 3.103 3.361 3.375 3.350 3.304 3.347 3.325 3.275 3.284 3.283 3.224 3.333 3.251 3.381 -177.7 -172.4 -167.4 -164.1 -162.4 -162.9 -163.8 -166.3 -169.2 -173.1 -177.3 178.4 173.2 168.0 161.8 156.8 151.2 145.5 140.9 136.3 132.3 127.9 124.8 121.2 117.3 113.7 111.0 106.5 104.3 101.1 96.0 0.002 0.003 0.004 0.005 0.005 0.006 0.006 0.006 0.005 0.007 0.007 0.005 0.005 0.004 0.006 0.005 0.003 0.005 0.005 0.004 0.003 0.003 0.006 0.006 0.006 0.004 0.005 0.005 0.008 0.009 0.008 108.8 64.7 51.3 55.8 60.6 46.6 42.9 45.9 42.1 34.0 46.9 27.7 40.2 24.4 45.5 44.6 42.4 44.6 59.5 45.4 58.3 73.9 81.1 98.3 100.5 114.6 104.8 114.1 127.8 126.3 134.1 0.996 0.986 0.980 0.965 0.958 0.950 0.941 0.935 0.929 0.918 0.914 0.903 0.895 0.891 0.884 0.877 0.867 0.877 0.859 0.852 0.846 0.847 0.839 0.839 0.838 0.834 0.830 0.831 0.837 0.831 0.833 -2.4 -4.0 -5.8 -7.5 -8.6 -10.1 -11.2 -12.4 -13.8 -14.9 -16.0 -17.0 -18.3 -19.5 -20.4 -21.1 -22.1 -21.1 -24.4 -25.1 -25.9 -26.4 -27.4 -28.2 -29.1 -29.7 -30.6 -31.4 -32.0 -33.4 -34.0 UPC8179TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD COMPONENT LIST 1.0 GHz Output Port Matching 1000 pF 0.75 pF 10 pF 12 nH AMP-4 C1 C2 C3 L1 IN C2 L1 C3C OUT Top View C1 Mounting Direction C3 AMP-4 COMPONENT LIST 1.9GHz Output Port Matching 1000 pF 0.75 pF 10 pF 3.3 nH OUT L2 IN L1 C1, C3, C5, C6 C2 C4 L1 C2 C3 C1 C6 C4 C5 AMP-4 COMPONENT LIST OUT L2 IN L1 C1, C2, C4, C5 C3 L1 L2 2.4 GHz Output Port Matching 1000 pF 10 pF 1.8 nH 2.7 nH C1 C3 C4 C5 C2 UPC8179TB TEST CIRCUITS <1> f = 1.0 GHz Vcc C3 Output port matching circuit L1 6 50 Ω C1 IN C2 4 1 50 Ω OUT 2, 3, 5 <2> f = 1.9 GHz Vcc C4 C6 C5 Output port matching circuit L1 6 50 Ω C1 IN C2 4 1 C3 50 Ω OUT 2, 3, 5 <3> f = 2.4 GHz Vcc C3 C5 C4 Output port matching circuit L1 6 50 Ω IN C1 4 1 L2 2, 3, 5 50 Ω OUT C2 UPC8179TB SYSTEM APPLICATION EXAMPLE Low Noise Tr. RX I Q DEMOD .. N PLL PLL SW I 0° φ TX 90° PA Q LEAD CONNECTIONS OUTLINE DIMENSIONS (Units in mm) (Top View) PACKAGE OUTLINE S06 (Bottom View) 3 1.25±0.1 2.0±0.2 0.65 3 4 0.65 2 5 0.2 +0.1 -0 2 1.3 1 1 6 0.7 0 ~0.1 4 4 3 5 5 2 6 6 1 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC DOT ON BOTTOM SIDE 0.9 ± 0.1 C3C 2.1±0.1 +0.1 0.15 -0.5 RECOMMENDED P.C.B. LAYOUT (Units in mm) ORDERING INFORMATION Note: All dimensions are typical unless otherwise specified. PART NUMBER UPC8179TB-E3-A 0.4 QTY 3K/Reel Note: 1.9 0.8 Embossed tape, 8 mm wide. Pins 1, 2, 3 are in tape pull-out direction. 0.65 0.65 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 919-2500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 05/03/2006 5-10 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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