NEC UPC8128TB

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8179TB
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
wideband matched IC. This low current amplifier operates on 3.0 V.
This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Low current consumption
: ICC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage
: VCC = 2.4 to 3.3 V
• High efficiency
: PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz
PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz
PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz
• Power gain
: GP = 13.5 dB TYP. @ f = 1.0 GHz
GP = 15.5 dB TYP. @ f = 1.9 GHz
GP = 15.5 dB TYP. @ f = 2.4 GHz
• Excellent isolation
: ISL = 44 dB TYP. @ f = 1.0 GHz
ISL = 42 dB TYP. @ f = 1.9 GHz
ISL = 41 dB TYP. @ f = 2.4 GHz
• Operating frequency
: 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Light weight
: 7 mg (Standard value)
APPLICATION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14730EJ2V0DS00 (2nd edition)
Date Published August 2000 N CP(K)
Printed in Japan
©
2000
µPC8179TB
ORDERING INFORMATION
Part Number
µPC8179TB-E3
Package
Marking
6-pin super minimold
Supplying Form
C3C
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8179TB)
PIN CONNECTIONS
3
2
1
2
C3C
(Top View)
(Bottom View)
4
4
3
5
5
2
6
6
1
Data Sheet P14730EJ2V0DS00
Pin No.
Pin Name
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
µPC8179TB
PRODUCT LINE-UP (TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω)
Parameter
1.0 GHz output port
matching frequency
1.66 GHz output port
matching frequency
1.9 GHz output port
matching frequency
2.4 GHz output port
matching frequency
ICC
(mA)
GP
(dB)
ISL
(dB)
PO(1 dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1 dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1 dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1 dB)
(dBm)
µPC8178TB
1.9
11
39
−4.0
−
−
−
11.5
40
−7.0
11.5
38
−7.5
C3B
µPC8179TB
4.0
13.5
44
+3.0
−
−
−
15.5
42
+1.5
15.5
41
+1.0
C3C
µPC8128TB
2.8
12.5
39
−4.0
13
39
−4.0
13
37
−4.0
−
−
−
C2P
µPC8151TB
4.2
12.5
38
+2.5
15
36
+1.5
15
34
+0.5
−
−
−
C2U
µPC8152TB
5.6
23
40
−4.5
19.5
38
−8.5
17.5
35
−8.5
−
−
−
C2V
Part No.
Marking
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
SYSTEM APPLICATION EXAMPLE
Location examples in digital cellular
Low Noise Tr.
RX
I
Q
DEMOD.
÷N
SW
PLL
PLL
I
0°
TX
φ
PA
90°
Q
These ICs can be added to your system around V parts, when you need more isolation or gain. The application
herein, however, shows only examples, therefore the application can depend on your kit evaluation.
Data Sheet P14730EJ2V0DS00
3
µPC8179TB
PIN EXPLANATION
Pin
No.
Pin
Name
Applied
Voltage
(V)
Pin
Voltage
Note
(V)
1
INPUT
−
1.09
Signal input pin. A internal
matching circuit, configured with
resisters, enables 50 Ω connection over a wide band. This pin
must be coupled to signal source
with capacitor for DC cut.
2
3
5
GND
0
−
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
All the ground pins must be connected together with wide ground
pattern to decrease impedance
defference.
4
6
OUTPUT
VCC
voltage
as same
as VCC
through
external
inductor
−
2.4 to 3.3
−
Function and Applications
Signal output pin. This pin is designed as collector output. Due
to the high impedance output,
this pin should be externally
equipped with LC matching
circuit to next stage. For L, a
size 1005 chip inductor can be
chosen.
Power supply pin. This pin
should be externally equipped
with bypass capacitor to
minimize its impedance.
Note Pin voltage is measured at VCC = 3.0 V.
4
Data Sheet P14730EJ2V0DS00
Internal Equivalent Circuit
6
4
↓
2
3
1
5
µPC8179TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25 °C, Pin 4, Pin 6
3.6
V
Circuit Current
ICC
TA = +25 °C
15
mA
Power Dissipation
PD
Mounted on double sided copper clad 50 × 50 × 1.6
mm epoxy glass PWB (TA = +85 °C)
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+5
dBm
TA = +25 °C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Remarks
Supply Voltage
VCC
2.4
3.0
3.3
V
The same voltage should be applied
to pin 4 and pin 6.
Operating Ambient Temperature
TA
−40
+25
+85
°C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No signal
2.9
4.0
5.4
mA
Power Gain
GP
f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
11.0
13.0
13.0
13.5
15.5
15.5
15.5
17.5
17.5
dB
Isolation
ISL
f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
39
37
36
44
42
41
−
−
−
dB
Po(1dB)
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
−0.5
−2.0
−3.0
+3.0
+1.5
+1.0
−
−
−
dBm
Noise Figure
NF
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
−
−
−
5.0
5.0
5.0
6.5
6.5
6.5
dB
Input Return Loss
(Without matching circuit)
RLin
f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
4
4
6
7
7
9
−
−
−
dB
1 dB Gain Compression Output
Power
Data Sheet P14730EJ2V0DS00
5
µPC8179TB
TEST CIRCUITS
<1> f = 1.0 GHz
VCC
C3
Output port matching circuit
L1
6
50 Ω
C1
50 Ω
C2
4
1
IN
OUT
2, 3, 5
<2> f = 1.9 GHz
VCC
C4
C6
C5
Output port matching circuit
L1
6
50 Ω
C1
C2
4
1
IN
C3 50 Ω
OUT
2, 3, 5
<3> f = 2.4 GHz
VCC
C3
C5
C4
Output port matching circuit
L1
6
50 Ω
IN
C1
50 Ω
4
1
OUT
L2
2, 3, 5
6
Data Sheet P14730EJ2V0DS00
C2
µPC8179TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
<1> f = 1.0 GHz
AMP-4
Top View
L1
C3C
OUT
IN
C2
Connector
C1
Connector
Mounting direction
C3
COMPONENT LIST
1.0 GHz Output Port Matching
C1
1 000 pF
C2
0.75 pF
C3
10 pF
L1
12 nH
Data Sheet P14730EJ2V0DS00
7
µPC8179TB
<2> f = 1.9 GHz
AMP-4
Top View
L1
C3C
OUT
IN
Connector
C1
C4
Mounting direction
C5
COMPONENT LIST
1.9 GHz Output Port Matching
8
C2
C1, C3, C5, C6
1 000 pF
C2
0.75 pF
C4
10 pF
L1
3.3 nH
Data Sheet P14730EJ2V0DS00
C6
C3
Connector
µPC8179TB
<3> f = 2.4 GHz
AMP-4
Top View
Connector
C2
L1
C3C
OUT
L2
IN
Connector
C1
C5
C3
Mounting direction
C4
COMPONENT LIST
2.4 GHz Output Port Matching
C1, C2, C4, C5
1 000 pF
C3
10 pF
L1
1.8 nH
L2
2.7 nH
NOTES
(∗1) 42 × 35 × 0.4 mm double sided copper clad polyimide board
(∗2) Solder plated on pattern
(∗3) Back side: GND pattern
(∗4)
: Through holes
Data Sheet P14730EJ2V0DS00
9
µPC8179TB
TYPICAL CHARACTERISTICS (unless otherwise specified, TA = +25°°C)
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
5
5
No signals
VCC = 3.0 V
4
3
2
1
0
10
Circuit Current ICC (mA)
Circuit Current ICC (mA)
No signals
0
2
3
1
Supply Voltage VCC (V)
4
4
3
2
1
0
–60 –40 –20 0 +20 +40 +60 +80 +100
Operating Ambient Temperature TA (°C)
Data Sheet P14730EJ2V0DS00
µPC8179TB
1.0 GHz OUTPUT PORT MATCHING
S-PARAMETER (monitored at connector on board)
TA = +25°C, VCC = Vout = 3.0 V
S11
1:
73.629 Ω
–61.461 Ω
2.5895 pF
1 000.000 000 MHz
MARKER 1
1 GHz
1
START 100.000 000 MHz
S22
1:
STOP 3 100.000 000 MHz
50.812 Ω
20.338 Ω
3.2369 nH
1 000.000 000 MHz
MARKER 1
1 GHz
1
START 100.000 000 MHz
STOP 3 100.000 000 MHz
Data Sheet P14730EJ2V0DS00
11
µPC8179TB
1.0 GHz OUTPUT PORT MATCHING
POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
+20
+20
VCC = 3.3 V
Power Gain GP (dB)
Power Gain GP (dB)
0
VCC = 3.0 V
–10
VCC = 2.4 V
–20
–30
0
TA = +25°C
–10
TA = +85°C
–20
–30
–40
0.1
3.0
1.0
0.3
Frequency f (GHz)
–20
–20
Isolation ISL (dB)
Isolation ISL (dB)
–10
–30
VCC = 3.3 V
VCC = 3.0 V
–50
–60
3.0
1.0
0.3
Frequency f (GHz)
ISOLATION vs. FREQUENCY
ISOLATION vs. FREQUENCY
–10
–40
TA = –40°C
+10
+10
–40
0.1
VCC = 3.0 V
VCC = 3.0 V
–30
TA = –40°C
–40
TA = +25°C
–50
–60
VCC = 2.4 V
TA = +85°C
–70
0.1
–70
0.1
3.0
1.0
0.3
Frequency f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
VCC = 3.0 V
12
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
VCC = 2.4 V
–5
–10
VCC = 3.0 V
–15
VCC = 3.3 V
–20
–25
–30
0.1
1.0
0.3
Frequency f (GHz)
3.0
1.0
0.3
Frequency f (GHz)
3.0
–5
TA = +85°C
–10
TA = +25°C
–15
TA = –40°C
–20
–25
–30
0.1
Data Sheet P14730EJ2V0DS00
1.0
0.3
Frequency f (GHz)
3.0
µPC8179TB
1.0 GHz OUTPUT PORT MATCHING
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
+5
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
+5
0
–5
VCC = 2.4 V
–10
VCC = 3.0 V
–15
VCC = 3.3 V
–20
–25
0.1
0
–5
TA = –40°C
–10
TA = +25°C
–15
TA = +85°C
–20
–25
0.1
3.0
1.0
0.3
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
+10
VCC = 3.0 V
VCC = 3.3 V
+5
Output Power Pout (dBm)
Output Power Pout (dBm)
+5
VCC = 3.0 V
VCC = 2.4 V
–5
–10
–15
–20
–25
TA = +85°C
–5
TA = +25°C
–10
–15
–20
–30
–40 –35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
+5
–10
–20
Pout(each)
–40
IM3
–60
–70
–80
0
–40 –35 –30 –25 –20 –15 –10 –5
Input Power of Each Tone Pin(each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power of Each Tone Pout(each) (dBm)
0
3RD ORDER INTERMODULATION DISTORTION,
OUTPUT POWER OF EACH TONE
vs. INPUT POWER OF EACH TONE
+20
+10 VCC = 3.0 V
f1 = 1 000 MHz
0 f2 = 1 001 MHz
–50
TA = –40°C
0
–25
–30
–40 –35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
–30
3.0
1.0
0.3
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
+10
0
VCC = 3.0 V
0
+5
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
60
VCC = 3.3 V f1 = 1 000 MHz
f2 = 1 001 MHz
50
40
VCC = 2.4 V
VCC = 3.0 V
30
20
10
0
–20
Data Sheet P14730EJ2V0DS00
+5
–15
0
–10
–5
Output Power of Each Tone Pout(each) (dBm)
13
µPC8179TB
1.0 GHz OUTPUT PORT MATCHING
NOISE FIGURE vs. SUPPLY VOLTAGE
6.0
TA = +85°C
Noise Figure NF (dB)
5.5
5.0
4.5
TA = +25°C
4.0
TA = –40°C
3.5
3.0
2.0
14
3.0
2.5
Supply Voltage VCC (V)
3.5
Data Sheet P14730EJ2V0DS00
µPC8179TB
1.9 GHz OUTPUT PORT MATCHING
S-PARAMETER (monitored at connector on board)
TA = +25°C, VCC = Vout = 3.0 V
S11
1:
38.717 Ω
–48.486 Ω
1.7276 pF
1 900.000 000 MHz
MARKER 1
1.9 GHz
1
START 100.000 000 MHz
S22
1:
STOP 3 100.000 000 MHz
62.379 Ω
–6.1953 Ω
13.521 pF
1 900.000 000 MHz
MARKER 1
1.9 GHz
1
START 100.000 000 MHz
STOP 3 100.000 000 MHz
Data Sheet P14730EJ2V0DS00
15
µPC8179TB
1.9 GHz OUTPUT PORT MATCHING
POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
+20
+20
VCC = 3.3 V
VCC = 3.0 V
0
–10
–20
VCC = 2.4 V
–30
–40
0.1
TA = +85°C
–10
–20
–30
–40
0.1
3.0
1.0
0.3
Frequency f (GHz)
TA = +25°C
0
–20
–20
–30
VCC = 3.3 V
VCC = 3.0 V
–50
VCC = 2.4 V
VCC = 3.0 V
TA = –40°C
–30
TA = +25°C
–40
–50
TA = +85°C
–60
–60
–70
0.1
–70
0.1
3.0
1.0
0.3
Frequency f (GHz)
1.0
0.3
Frequency f (GHz)
0
16
TA = +85°C
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
VCC = 2.4 V
–5
VCC = 3.3 V
VCC = 3.0 V
–15
–20
–25
–30
0.1
3.0
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
–10
3.0
1.0
0.3
Frequency f (GHz)
ISOLATION vs. FREQUENCY
–10
Isolation ISL (dB)
Isolation ISL (dB)
ISOLATION vs. FREQUENCY
–10
–40
TA = –40°C
+10
Power Gain GP (dB)
Power Gain GP (dB)
+10
VCC = 3.0 V
1.0
0.3
Frequency f (GHz)
3.0
–5
TA = +25°C
–10
TA = –40°C
–15
–20
–25
VCC = 3.0 V
–30
1.0
0.1
0.3
Frequency f (GHz)
Data Sheet P14730EJ2V0DS00
3.0
µPC8179TB
1.9 GHz OUTPUT PORT MATCHING
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
+5
+5
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
VCC = 3.0 V
0
–5
–10
VCC = 3.3 V
VCC = 3.0 V
–15
VCC = 2.4 V
–20
–25
0.1
–5
–10
TA = +85°C
–15
TA = +25°C
–20
TA = –40°C
–25
0.1
3.0
1.0
0.3
Frequency f (GHz)
0
OUTPUT POWER vs. INPUT POWER
3.0
1.0
0.3
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
+10
+10
+5
+5
VCC = 3.3 V
Output Power Pout (dBm)
0
–5
VCC = 3.0 V
–10
–15
VCC = 2.4 V
–20
0
TA = +25°C
–5
–10
–15
TA = +85°C
–20
–25
–25
–30
–40 –35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
VCC = 3.0 V
–30
+5
–40 –35 –30 –25 –20 –15 –10 –5 0
Input Power Pin (dBm)
0
+5
3RD ORDER INTERMODULATION DISTORTION,
OUTPUT POWER OF EACH TONE
vs. INPUT POWER OF EACH TONE
+20
+10
0
Pout(each)
–10
–20
IM3
–30
–40
–50
–60
–70
VCC = 3.0 V
f1 = 1 900 MHz
f2 = 1 901 MHz
–80
0
–40 –35 –30 –25 –20 –15 –10 –5
Input Power of Each Tone Pin(each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power of Each Tone Pout(each) (dBm)
Output Power Pout (dBm)
TA = –40°C
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
60
f1 = 1 900 MHz
f2 = 1 901 MHz
50
40
VCC = 3.3 V
30
VCC = 2.4 V
VCC = 3.0 V
20
10
0
–20
Data Sheet P14730EJ2V0DS00
+5
–15
0
–10
–5
Output Power of Each Tone Pout(each) (dBm)
17
µPC8179TB
1.9 GHz OUTPUT PORT MATCHING
NOISE FIGURE vs. SUPPLY VOLTAGE
5.5
Noise Figure NF (dB)
TA = +85°C
5.0
4.5
TA = +25°C
4.0
3.5
3.0
2.0
18
TA = –40°C
3.0
2.5
Supply Voltage VCC (V)
3.5
Data Sheet P14730EJ2V0DS00
µPC8179TB
2.4 GHz OUTPUT PORT MATCHING
S-PARAMETER (monitored at connector on board)
TA = +25°C, VCC = Vout = 3.0 V
S11
1:
31.709 Ω
–36.367 Ω
1.8235 pF
2 400.000 000 MHz
MARKER 1
2.4 GHz
1
START 100.000 000 MHz
S22
1:
STOP 3 100.000 000 MHz
41.473 Ω
8.8828 Ω
589.06 pH
2 400.000 000 MHz
1
START 100.000 000 MHz
STOP 3 100.000 000 MHz
Data Sheet P14730EJ2V0DS00
19
µPC8179TB
2.4 GHz OUTPUT PORT MATCHING
POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
+20
+20
VCC = 3.3 V
Power Gain GP (dB)
Power Gain GP (dB)
VCC = 3.0 V
0
–10
–20
VCC = 2.4 V
–30
TA = +25°C
0
–10
–20
TA = +85°C
–30
–40
0.1
3.0
1.0
0.3
Frequency f (GHz)
–20
–20
VCC = 3.3 V
–30
–40
VCC = 3.0 V
–50
VCC = 3.0 V
TA = +25°C
–30
–40
TA = –40°C
–50
–60
–60
VCC = 2.4 V
TA = +85°C
–70
0.1
3.0
1.0
0.3
Frequency f (GHz)
0
TA = +85°C
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
VCC = 2.4 V
20
3.0
1.0
0.3
Frequency f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
–5
VCC = 3.0 V
–10
VCC = 3.3 V
–15
–20
–25
–30
0.1
3.0
1.0
0.3
Frequency f (GHz)
ISOLATION vs. FREQUENCY
–10
Isolation ISL (dB)
Isolation ISL (dB)
ISOLATION vs. FREQUENCY
–10
–70
0.1
TA = –40°C
+10
+10
–40
0.1
VCC = 3.0 V
1.0
0.3
Frequency f (GHz)
3.0
–5
–10
TA = +25°C
–15
TA = –40°C
–20
–25
VCC = 3.0 V
–30
1.0
0.1
0.3
Frequency f (GHz)
Data Sheet P14730EJ2V0DS00
3.0
µPC8179TB
2.4 GHz OUTPUT PORT MATCHING
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
+5
+5
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
VCC = 3.0 V
0
–5
–10
VCC = 2.4 V
–15
VCC = 3.0 V
VCC = 3.3 V
–20
–25
0.1
–5
–10
TA = +85°C
–15
TA = +25°C
–20
–25
0.1
3.0
1.0
0.3
Frequency f (GHz)
0
OUTPUT POWER vs. INPUT POWER
TA = –40°C
3.0
1.0
0.3
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
+10
+10
+5
+5
VCC = 3.3 V
Output Power Pout (dBm)
Output Power Pout (dBm)
VCC = 3.0 V
0
–5
VCC = 3.0 V
–10
–15
VCC = 2.4 V
–20
–25
+10
Pout(each)
–10
–20
–30
IM3
–50
–60
–70
–10
TA = –40°C
–15
–20
TA = +85°C
–30
–40 –35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
+5
VCC = 3.0 V
f1 = 2 400 MHz
f2 = 2 401 MHz
–80
0
–40 –35 –30 –25 –20 –15 –10 –5
Input Power of Each Tone Pin(each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power of Each Tone Pout(each) (dBm)
0
3RD ORDER INTERMODULATION DISTORTION,
OUTPUT POWER OF EACH TONE
vs. INPUT POWER OF EACH TONE
+20
–40
TA = +25°C
–5
–25
–30
–40 –35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
0
0
0
+5
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
60
f1 = 2 400 MHz
f2 = 2 401 MHz
50
VCC = 3.3 V
40
VCC = 3.0 V
30
20
VCC = 2.4 V
10
0
–20
Data Sheet P14730EJ2V0DS00
+5
–15
0
–10
–5
Output Power of Each Tone Pout(each) (dBm)
21
µPC8179TB
2.4 GHz OUTPUT PORT MATCHING
NOISE FIGURE vs. SUPPLY VOLTAGE
5.5
Noise Figure NF (dB)
TA = +85°C
5.0
4.5
TA = +25°C
4.0
3.5
3.0
2.0
TA = –40°C
3.0
2.5
Supply Voltage VCC (V)
3.5
Remark The graphs indicate nominal characteristics.
22
Data Sheet P14730EJ2V0DS00
µPC8179TB
S-PARAMETER (VCC = Vout = 3.0 V)
S11-FREQUENCY
0.1 G
3.0 G
1.0 G
2.0 G
S22-FREQUENCY
0.1 G
1.0 G
2.0 G
3.0 G
Data Sheet P14730EJ2V0DS00
23
µPC8179TB
TYPICAL S-PARAMETER VALUES (TA = +25°°C)
VCC = Vout = 3.0 V, ICC = 4.0 mA
FREQUENCY
24
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100.0000
0.824
−17.1
1.181
−177.7
0.002
108.8
0.996
−2.4
200.0000
0.692
−25.9
1.181
−172.4
0.003
64.7
0.986
−4.0
300.0000
0.594
−29.2
1.247
−167.4
0.004
51.3
0.980
−5.8
400.0000
0.533
−30.7
1.370
−164.1
0.005
55.8
0.965
−7.5
500.0000
0.499
−31.1
1.514
−162.4
0.005
60.6
0.958
−8.6
600.0000
0.474
−32.0
1.677
−162.9
0.006
46.6
0.950
−10.1
700.0000
0.460
−32.7
1.885
−163.8
0.006
42.9
0.941
−11.2
800.0000
0.450
−34.0
2.050
−166.3
0.006
45.9
0.935
−12.4
900.0000
0.441
−35.6
2.237
−169.2
0.005
42.1
0.929
−13.8
1000.0000
0.438
−37.7
2.460
−173.1
0.007
34.0
0.918
−14.9
1100.0000
0.431
−39.8
2.627
−177.3
0.007
46.9
0.914
−16.0
1200.0000
0.426
−42.0
2.772
178.4
0.005
27.7
0.903
−17.0
1300.0000
0.427
−44.8
2.965
173.2
0.005
40.2
0.895
−18.3
1400.0000
0.417
−48.1
3.123
168.0
0.004
24.4
0.891
−19.5
1500.0000
0.413
−50.6
3.199
161.8
0.006
45.5
0.884
−20.4
1600.0000
0.408
−54.6
3.351
156.8
0.005
44.6
0.877
−21.1
1700.0000
0.398
−57.6
3.345
151.2
0.003
42.4
0.867
−22.1
1800.0000
0.387
−61.6
3.403
145.5
0.005
42.7
0.861
−23.0
1900.0000
0.380
−64.9
3.361
140.9
0.005
59.5
0.859
−24.4
2000.0000
0.366
−69.1
3.375
136.3
0.004
45.4
0.852
−25.1
2100.0000
0.352
−72.1
3.350
132.3
0.003
58.3
0.846
−25.9
2200.0000
0.341
−75.6
3.304
127.9
0.003
73.9
0.847
−26.4
2300.0000
0.330
−79.4
3.347
124.8
0.006
81.1
0.839
−27.4
2400.0000
0.320
−82.4
3.325
121.2
0.006
98.3
0.839
−28.2
2500.0000
0.304
−85.6
3.275
117.3
0.006
100.5
0.838
−29.1
2600.0000
0.296
−88.2
3.284
113.7
0.004
114.6
0.834
−29.7
2700.0000
0.285
−91.7
3.283
111.0
0.005
104.8
0.830
−30.6
2800.0000
0.272
−94.3
3.224
106.5
0.005
114.1
0.831
−31.4
2900.0000
0.267
−96.9
3.333
104.3
0.008
127.8
0.837
−32.0
3000.0000
0.256
−99.5
3.251
101.1
0.009
126.3
0.831
−33.4
3100.0000
0.248
−101.9
3.381
96.0
0.008
134.1
0.833
−34.0
Data Sheet P14730EJ2V0DS00
µPC8179TB
PACKAGE DIMENSIONS
6 PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
Data Sheet P14730EJ2V0DS00
0.15 +0.1
–0.05
0 to 0.1
0.7
0.1 MIN.
0.9±0.1
2.0±0.2
1.25±0.1
25
µPC8179TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values
should be adjusted for applied frequency to match impedance to next stage.
(5) The DC capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
26
Data Sheet P14730EJ2V0DS00
µPC8179TB
[MEMO]
Data Sheet P14730EJ2V0DS00
27
µPC8179TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
• The information in this document is current as of August, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4