DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 V. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 15.5 dB TYP. @ f = 2.4 GHz • Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz ISL = 42 dB TYP. @ f = 1.9 GHz ISL = 41 dB TYP. @ f = 2.4 GHz • Operating frequency : 0.1 to 2.4 GHz (Output port LC matching) • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) • Light weight : 7 mg (Standard value) APPLICATION • Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14730EJ2V0DS00 (2nd edition) Date Published August 2000 N CP(K) Printed in Japan © 2000 µPC8179TB ORDERING INFORMATION Part Number µPC8179TB-E3 Package Marking 6-pin super minimold Supplying Form C3C Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8179TB) PIN CONNECTIONS 3 2 1 2 C3C (Top View) (Bottom View) 4 4 3 5 5 2 6 6 1 Data Sheet P14730EJ2V0DS00 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC µPC8179TB PRODUCT LINE-UP (TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Parameter 1.0 GHz output port matching frequency 1.66 GHz output port matching frequency 1.9 GHz output port matching frequency 2.4 GHz output port matching frequency ICC (mA) GP (dB) ISL (dB) PO(1 dB) (dBm) GP (dB) ISL (dB) PO(1 dB) (dBm) GP (dB) ISL (dB) PO(1 dB) (dBm) GP (dB) ISL (dB) PO(1 dB) (dBm) µPC8178TB 1.9 11 39 −4.0 − − − 11.5 40 −7.0 11.5 38 −7.5 C3B µPC8179TB 4.0 13.5 44 +3.0 − − − 15.5 42 +1.5 15.5 41 +1.0 C3C µPC8128TB 2.8 12.5 39 −4.0 13 39 −4.0 13 37 −4.0 − − − C2P µPC8151TB 4.2 12.5 38 +2.5 15 36 +1.5 15 34 +0.5 − − − C2U µPC8152TB 5.6 23 40 −4.5 19.5 38 −8.5 17.5 35 −8.5 − − − C2V Part No. Marking Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. SYSTEM APPLICATION EXAMPLE Location examples in digital cellular Low Noise Tr. RX I Q DEMOD. ÷N SW PLL PLL I 0° TX φ PA 90° Q These ICs can be added to your system around V parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation. Data Sheet P14730EJ2V0DS00 3 µPC8179TB PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage Note (V) 1 INPUT − 1.09 Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. 2 3 5 GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. 4 6 OUTPUT VCC voltage as same as VCC through external inductor − 2.4 to 3.3 − Function and Applications Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet P14730EJ2V0DS00 Internal Equivalent Circuit 6 4 ↓ 2 3 1 5 µPC8179TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25 °C, Pin 4, Pin 6 3.6 V Circuit Current ICC TA = +25 °C 15 mA Power Dissipation PD Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85 °C) 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +5 dBm TA = +25 °C RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage VCC 2.4 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency) Parameter Symbol Conditions MIN. TYP. MAX. Unit Circuit Current ICC No signal 2.9 4.0 5.4 mA Power Gain GP f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 11.0 13.0 13.0 13.5 15.5 15.5 15.5 17.5 17.5 dB Isolation ISL f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 39 37 36 44 42 41 − − − dB Po(1dB) f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz −0.5 −2.0 −3.0 +3.0 +1.5 +1.0 − − − dBm Noise Figure NF f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz − − − 5.0 5.0 5.0 6.5 6.5 6.5 dB Input Return Loss (Without matching circuit) RLin f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 4 4 6 7 7 9 − − − dB 1 dB Gain Compression Output Power Data Sheet P14730EJ2V0DS00 5 µPC8179TB TEST CIRCUITS <1> f = 1.0 GHz VCC C3 Output port matching circuit L1 6 50 Ω C1 50 Ω C2 4 1 IN OUT 2, 3, 5 <2> f = 1.9 GHz VCC C4 C6 C5 Output port matching circuit L1 6 50 Ω C1 C2 4 1 IN C3 50 Ω OUT 2, 3, 5 <3> f = 2.4 GHz VCC C3 C5 C4 Output port matching circuit L1 6 50 Ω IN C1 50 Ω 4 1 OUT L2 2, 3, 5 6 Data Sheet P14730EJ2V0DS00 C2 µPC8179TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD <1> f = 1.0 GHz AMP-4 Top View L1 C3C OUT IN C2 Connector C1 Connector Mounting direction C3 COMPONENT LIST 1.0 GHz Output Port Matching C1 1 000 pF C2 0.75 pF C3 10 pF L1 12 nH Data Sheet P14730EJ2V0DS00 7 µPC8179TB <2> f = 1.9 GHz AMP-4 Top View L1 C3C OUT IN Connector C1 C4 Mounting direction C5 COMPONENT LIST 1.9 GHz Output Port Matching 8 C2 C1, C3, C5, C6 1 000 pF C2 0.75 pF C4 10 pF L1 3.3 nH Data Sheet P14730EJ2V0DS00 C6 C3 Connector µPC8179TB <3> f = 2.4 GHz AMP-4 Top View Connector C2 L1 C3C OUT L2 IN Connector C1 C5 C3 Mounting direction C4 COMPONENT LIST 2.4 GHz Output Port Matching C1, C2, C4, C5 1 000 pF C3 10 pF L1 1.8 nH L2 2.7 nH NOTES (∗1) 42 × 35 × 0.4 mm double sided copper clad polyimide board (∗2) Solder plated on pattern (∗3) Back side: GND pattern (∗4) : Through holes Data Sheet P14730EJ2V0DS00 9 µPC8179TB TYPICAL CHARACTERISTICS (unless otherwise specified, TA = +25°°C) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 5 5 No signals VCC = 3.0 V 4 3 2 1 0 10 Circuit Current ICC (mA) Circuit Current ICC (mA) No signals 0 2 3 1 Supply Voltage VCC (V) 4 4 3 2 1 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (°C) Data Sheet P14730EJ2V0DS00 µPC8179TB 1.0 GHz OUTPUT PORT MATCHING S-PARAMETER (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 1: 73.629 Ω –61.461 Ω 2.5895 pF 1 000.000 000 MHz MARKER 1 1 GHz 1 START 100.000 000 MHz S22 1: STOP 3 100.000 000 MHz 50.812 Ω 20.338 Ω 3.2369 nH 1 000.000 000 MHz MARKER 1 1 GHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14730EJ2V0DS00 11 µPC8179TB 1.0 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY +20 +20 VCC = 3.3 V Power Gain GP (dB) Power Gain GP (dB) 0 VCC = 3.0 V –10 VCC = 2.4 V –20 –30 0 TA = +25°C –10 TA = +85°C –20 –30 –40 0.1 3.0 1.0 0.3 Frequency f (GHz) –20 –20 Isolation ISL (dB) Isolation ISL (dB) –10 –30 VCC = 3.3 V VCC = 3.0 V –50 –60 3.0 1.0 0.3 Frequency f (GHz) ISOLATION vs. FREQUENCY ISOLATION vs. FREQUENCY –10 –40 TA = –40°C +10 +10 –40 0.1 VCC = 3.0 V VCC = 3.0 V –30 TA = –40°C –40 TA = +25°C –50 –60 VCC = 2.4 V TA = +85°C –70 0.1 –70 0.1 3.0 1.0 0.3 Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = 3.0 V 12 Input Return Loss RLin (dB) Input Return Loss RLin (dB) VCC = 2.4 V –5 –10 VCC = 3.0 V –15 VCC = 3.3 V –20 –25 –30 0.1 1.0 0.3 Frequency f (GHz) 3.0 1.0 0.3 Frequency f (GHz) 3.0 –5 TA = +85°C –10 TA = +25°C –15 TA = –40°C –20 –25 –30 0.1 Data Sheet P14730EJ2V0DS00 1.0 0.3 Frequency f (GHz) 3.0 µPC8179TB 1.0 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY +5 Output Return Loss RLout (dB) Output Return Loss RLout (dB) +5 0 –5 VCC = 2.4 V –10 VCC = 3.0 V –15 VCC = 3.3 V –20 –25 0.1 0 –5 TA = –40°C –10 TA = +25°C –15 TA = +85°C –20 –25 0.1 3.0 1.0 0.3 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +10 VCC = 3.0 V VCC = 3.3 V +5 Output Power Pout (dBm) Output Power Pout (dBm) +5 VCC = 3.0 V VCC = 2.4 V –5 –10 –15 –20 –25 TA = +85°C –5 TA = +25°C –10 –15 –20 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) +5 –10 –20 Pout(each) –40 IM3 –60 –70 –80 0 –40 –35 –30 –25 –20 –15 –10 –5 Input Power of Each Tone Pin(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power of Each Tone Pout(each) (dBm) 0 3RD ORDER INTERMODULATION DISTORTION, OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE +20 +10 VCC = 3.0 V f1 = 1 000 MHz 0 f2 = 1 001 MHz –50 TA = –40°C 0 –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) –30 3.0 1.0 0.3 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +10 0 VCC = 3.0 V 0 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 VCC = 3.3 V f1 = 1 000 MHz f2 = 1 001 MHz 50 40 VCC = 2.4 V VCC = 3.0 V 30 20 10 0 –20 Data Sheet P14730EJ2V0DS00 +5 –15 0 –10 –5 Output Power of Each Tone Pout(each) (dBm) 13 µPC8179TB 1.0 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 6.0 TA = +85°C Noise Figure NF (dB) 5.5 5.0 4.5 TA = +25°C 4.0 TA = –40°C 3.5 3.0 2.0 14 3.0 2.5 Supply Voltage VCC (V) 3.5 Data Sheet P14730EJ2V0DS00 µPC8179TB 1.9 GHz OUTPUT PORT MATCHING S-PARAMETER (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 1: 38.717 Ω –48.486 Ω 1.7276 pF 1 900.000 000 MHz MARKER 1 1.9 GHz 1 START 100.000 000 MHz S22 1: STOP 3 100.000 000 MHz 62.379 Ω –6.1953 Ω 13.521 pF 1 900.000 000 MHz MARKER 1 1.9 GHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14730EJ2V0DS00 15 µPC8179TB 1.9 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY +20 +20 VCC = 3.3 V VCC = 3.0 V 0 –10 –20 VCC = 2.4 V –30 –40 0.1 TA = +85°C –10 –20 –30 –40 0.1 3.0 1.0 0.3 Frequency f (GHz) TA = +25°C 0 –20 –20 –30 VCC = 3.3 V VCC = 3.0 V –50 VCC = 2.4 V VCC = 3.0 V TA = –40°C –30 TA = +25°C –40 –50 TA = +85°C –60 –60 –70 0.1 –70 0.1 3.0 1.0 0.3 Frequency f (GHz) 1.0 0.3 Frequency f (GHz) 0 16 TA = +85°C Input Return Loss RLin (dB) Input Return Loss RLin (dB) VCC = 2.4 V –5 VCC = 3.3 V VCC = 3.0 V –15 –20 –25 –30 0.1 3.0 INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 –10 3.0 1.0 0.3 Frequency f (GHz) ISOLATION vs. FREQUENCY –10 Isolation ISL (dB) Isolation ISL (dB) ISOLATION vs. FREQUENCY –10 –40 TA = –40°C +10 Power Gain GP (dB) Power Gain GP (dB) +10 VCC = 3.0 V 1.0 0.3 Frequency f (GHz) 3.0 –5 TA = +25°C –10 TA = –40°C –15 –20 –25 VCC = 3.0 V –30 1.0 0.1 0.3 Frequency f (GHz) Data Sheet P14730EJ2V0DS00 3.0 µPC8179TB 1.9 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY +5 +5 Output Return Loss RLout (dB) Output Return Loss RLout (dB) VCC = 3.0 V 0 –5 –10 VCC = 3.3 V VCC = 3.0 V –15 VCC = 2.4 V –20 –25 0.1 –5 –10 TA = +85°C –15 TA = +25°C –20 TA = –40°C –25 0.1 3.0 1.0 0.3 Frequency f (GHz) 0 OUTPUT POWER vs. INPUT POWER 3.0 1.0 0.3 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +10 +10 +5 +5 VCC = 3.3 V Output Power Pout (dBm) 0 –5 VCC = 3.0 V –10 –15 VCC = 2.4 V –20 0 TA = +25°C –5 –10 –15 TA = +85°C –20 –25 –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) VCC = 3.0 V –30 +5 –40 –35 –30 –25 –20 –15 –10 –5 0 Input Power Pin (dBm) 0 +5 3RD ORDER INTERMODULATION DISTORTION, OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE +20 +10 0 Pout(each) –10 –20 IM3 –30 –40 –50 –60 –70 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz –80 0 –40 –35 –30 –25 –20 –15 –10 –5 Input Power of Each Tone Pin(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power of Each Tone Pout(each) (dBm) Output Power Pout (dBm) TA = –40°C 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 f1 = 1 900 MHz f2 = 1 901 MHz 50 40 VCC = 3.3 V 30 VCC = 2.4 V VCC = 3.0 V 20 10 0 –20 Data Sheet P14730EJ2V0DS00 +5 –15 0 –10 –5 Output Power of Each Tone Pout(each) (dBm) 17 µPC8179TB 1.9 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 5.5 Noise Figure NF (dB) TA = +85°C 5.0 4.5 TA = +25°C 4.0 3.5 3.0 2.0 18 TA = –40°C 3.0 2.5 Supply Voltage VCC (V) 3.5 Data Sheet P14730EJ2V0DS00 µPC8179TB 2.4 GHz OUTPUT PORT MATCHING S-PARAMETER (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 1: 31.709 Ω –36.367 Ω 1.8235 pF 2 400.000 000 MHz MARKER 1 2.4 GHz 1 START 100.000 000 MHz S22 1: STOP 3 100.000 000 MHz 41.473 Ω 8.8828 Ω 589.06 pH 2 400.000 000 MHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14730EJ2V0DS00 19 µPC8179TB 2.4 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY +20 +20 VCC = 3.3 V Power Gain GP (dB) Power Gain GP (dB) VCC = 3.0 V 0 –10 –20 VCC = 2.4 V –30 TA = +25°C 0 –10 –20 TA = +85°C –30 –40 0.1 3.0 1.0 0.3 Frequency f (GHz) –20 –20 VCC = 3.3 V –30 –40 VCC = 3.0 V –50 VCC = 3.0 V TA = +25°C –30 –40 TA = –40°C –50 –60 –60 VCC = 2.4 V TA = +85°C –70 0.1 3.0 1.0 0.3 Frequency f (GHz) 0 TA = +85°C Input Return Loss RLin (dB) Input Return Loss RLin (dB) VCC = 2.4 V 20 3.0 1.0 0.3 Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 –5 VCC = 3.0 V –10 VCC = 3.3 V –15 –20 –25 –30 0.1 3.0 1.0 0.3 Frequency f (GHz) ISOLATION vs. FREQUENCY –10 Isolation ISL (dB) Isolation ISL (dB) ISOLATION vs. FREQUENCY –10 –70 0.1 TA = –40°C +10 +10 –40 0.1 VCC = 3.0 V 1.0 0.3 Frequency f (GHz) 3.0 –5 –10 TA = +25°C –15 TA = –40°C –20 –25 VCC = 3.0 V –30 1.0 0.1 0.3 Frequency f (GHz) Data Sheet P14730EJ2V0DS00 3.0 µPC8179TB 2.4 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY +5 +5 Output Return Loss RLout (dB) Output Return Loss RLout (dB) VCC = 3.0 V 0 –5 –10 VCC = 2.4 V –15 VCC = 3.0 V VCC = 3.3 V –20 –25 0.1 –5 –10 TA = +85°C –15 TA = +25°C –20 –25 0.1 3.0 1.0 0.3 Frequency f (GHz) 0 OUTPUT POWER vs. INPUT POWER TA = –40°C 3.0 1.0 0.3 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +10 +10 +5 +5 VCC = 3.3 V Output Power Pout (dBm) Output Power Pout (dBm) VCC = 3.0 V 0 –5 VCC = 3.0 V –10 –15 VCC = 2.4 V –20 –25 +10 Pout(each) –10 –20 –30 IM3 –50 –60 –70 –10 TA = –40°C –15 –20 TA = +85°C –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) +5 VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz –80 0 –40 –35 –30 –25 –20 –15 –10 –5 Input Power of Each Tone Pin(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power of Each Tone Pout(each) (dBm) 0 3RD ORDER INTERMODULATION DISTORTION, OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE +20 –40 TA = +25°C –5 –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 0 0 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 f1 = 2 400 MHz f2 = 2 401 MHz 50 VCC = 3.3 V 40 VCC = 3.0 V 30 20 VCC = 2.4 V 10 0 –20 Data Sheet P14730EJ2V0DS00 +5 –15 0 –10 –5 Output Power of Each Tone Pout(each) (dBm) 21 µPC8179TB 2.4 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 5.5 Noise Figure NF (dB) TA = +85°C 5.0 4.5 TA = +25°C 4.0 3.5 3.0 2.0 TA = –40°C 3.0 2.5 Supply Voltage VCC (V) 3.5 Remark The graphs indicate nominal characteristics. 22 Data Sheet P14730EJ2V0DS00 µPC8179TB S-PARAMETER (VCC = Vout = 3.0 V) S11-FREQUENCY 0.1 G 3.0 G 1.0 G 2.0 G S22-FREQUENCY 0.1 G 1.0 G 2.0 G 3.0 G Data Sheet P14730EJ2V0DS00 23 µPC8179TB TYPICAL S-PARAMETER VALUES (TA = +25°°C) VCC = Vout = 3.0 V, ICC = 4.0 mA FREQUENCY 24 S11 S21 S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 100.0000 0.824 −17.1 1.181 −177.7 0.002 108.8 0.996 −2.4 200.0000 0.692 −25.9 1.181 −172.4 0.003 64.7 0.986 −4.0 300.0000 0.594 −29.2 1.247 −167.4 0.004 51.3 0.980 −5.8 400.0000 0.533 −30.7 1.370 −164.1 0.005 55.8 0.965 −7.5 500.0000 0.499 −31.1 1.514 −162.4 0.005 60.6 0.958 −8.6 600.0000 0.474 −32.0 1.677 −162.9 0.006 46.6 0.950 −10.1 700.0000 0.460 −32.7 1.885 −163.8 0.006 42.9 0.941 −11.2 800.0000 0.450 −34.0 2.050 −166.3 0.006 45.9 0.935 −12.4 900.0000 0.441 −35.6 2.237 −169.2 0.005 42.1 0.929 −13.8 1000.0000 0.438 −37.7 2.460 −173.1 0.007 34.0 0.918 −14.9 1100.0000 0.431 −39.8 2.627 −177.3 0.007 46.9 0.914 −16.0 1200.0000 0.426 −42.0 2.772 178.4 0.005 27.7 0.903 −17.0 1300.0000 0.427 −44.8 2.965 173.2 0.005 40.2 0.895 −18.3 1400.0000 0.417 −48.1 3.123 168.0 0.004 24.4 0.891 −19.5 1500.0000 0.413 −50.6 3.199 161.8 0.006 45.5 0.884 −20.4 1600.0000 0.408 −54.6 3.351 156.8 0.005 44.6 0.877 −21.1 1700.0000 0.398 −57.6 3.345 151.2 0.003 42.4 0.867 −22.1 1800.0000 0.387 −61.6 3.403 145.5 0.005 42.7 0.861 −23.0 1900.0000 0.380 −64.9 3.361 140.9 0.005 59.5 0.859 −24.4 2000.0000 0.366 −69.1 3.375 136.3 0.004 45.4 0.852 −25.1 2100.0000 0.352 −72.1 3.350 132.3 0.003 58.3 0.846 −25.9 2200.0000 0.341 −75.6 3.304 127.9 0.003 73.9 0.847 −26.4 2300.0000 0.330 −79.4 3.347 124.8 0.006 81.1 0.839 −27.4 2400.0000 0.320 −82.4 3.325 121.2 0.006 98.3 0.839 −28.2 2500.0000 0.304 −85.6 3.275 117.3 0.006 100.5 0.838 −29.1 2600.0000 0.296 −88.2 3.284 113.7 0.004 114.6 0.834 −29.7 2700.0000 0.285 −91.7 3.283 111.0 0.005 104.8 0.830 −30.6 2800.0000 0.272 −94.3 3.224 106.5 0.005 114.1 0.831 −31.4 2900.0000 0.267 −96.9 3.333 104.3 0.008 127.8 0.837 −32.0 3000.0000 0.256 −99.5 3.251 101.1 0.009 126.3 0.831 −33.4 3100.0000 0.248 −101.9 3.381 96.0 0.008 134.1 0.833 −34.0 Data Sheet P14730EJ2V0DS00 µPC8179TB PACKAGE DIMENSIONS 6 PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet P14730EJ2V0DS00 0.15 +0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 25 µPC8179TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 26 Data Sheet P14730EJ2V0DS00 µPC8179TB [MEMO] Data Sheet P14730EJ2V0DS00 27 µPC8179TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES • The information in this document is current as of August, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4