JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V Collector cut-off current ICBO VCB= 600V, IE=0 100 µA Emitter cut-off current IEBO VEB= 6V, IC=0 100 µA hFE(1) VCE= 10V, IC= 200 mA 9 hFE(2) VCE= 10V, IC= 10 mA 6 Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40 mA 1.1 V VCE=10V, Ic=100mA 40 5 MHz Transition frequency fT Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 µs Storage time ts VCC=100V 2.5 µs f =1MHz CLASSIFICATION OF hFE(1) Range 9-15 15-20 20-25 25-30 30-35 35-40