DC COMPONENTS CO., LTD. 2SB507 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in power amplifier and switching circuits. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -3 A Total Power Dissipation PD 2 W Total Power Dissipation(TC=25 C) PD 30 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO -60 - - V IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -60 - - V IC=-10mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -5 - - V IE=-1mA, IC=0 ICBO - - -0.1 mA VCB=-20V, IE=0 ICEO - - -5 mA VCE=-60V, IB=0 Collector Cutoff Current Emitter Cutoff Current IEBO - - -1 mA Collector-Emitter Saturation Voltage(1) VCE(sat) - - -1 V Base-Emitter On Voltage(1) VBE(on) - - -1.5 V IC=-1A, VCE=-2V hFE1 40 - - - IC=-0.1A, VCE=-2V hFE2 40 - 320 - IC=-1A, VCE=-2V fT - 8 - MHz DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE2 Rank C D E F Range 40~80 60~120 100~200 160~320 VEB=-4V, IC=0 IC=-2A, IB=-0.2A IC=-500mA, VCE=-5V, f=100MHz