EUDYNA F0100504B

F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
02.09.02
Features
F0100504B
-
2.2kΩ high transimpedance
-
29dB gain
3.3V/5V 2.5Gb/s NRZ Receiver
-
Low noise (typ.6pΑ/√Ηz@100MHz)
Transimpedance Amplifier
-
Typical 1900MHz O/E Bandwidth
-
Over 25dB wide dynamic range
-
3.3V or 5.0V single Voltage Supply operation
-
Differential output
Applications
-
Preamplifier of an optical receiver circuit for OC-48/STM-16 (2.5Gb/s)
Functional Description
The F0100504B is stable GaAs integrated transimpedance amplifier. Typical Applications are for 2.5Gb/s
optical receiver circuit, for example, OC-48/STM-16, instrumentation, and measurement applications. The
integrated feedback loop design provides broad bandwidth and stable operation. The F0100504B typically
specifies a high transimpedance of 2.2kΩ (RL=50Ω) at a typical 1900MHz O/E bandwidth (-3dB-cutoff
frequency) with a dynamic range of over 26dB. It also provides a large optical input overload of more than
+1dBm. Furthermore, it can operate with a low supply voltage of single +3.3V. It features a typical dissipation
current of 50mA.
Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the
packaged preamplifier cannot operate with the maximum performance owing to parasitic element of the package.
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Absolute Maximum Ratings
All published data at Ta=25°C unless otherwise indicated. This device isn’t guaranteed opto-electric
characteristics in these ranges. At least, this device isn’t broken in these ranges.
VSS=0V
Parameter
Symbol
Value
Units
Attentions
Supply Voltage
VDD3.3
-0.3 to +5.0V
V
at 3.3V operation
Supply Voltage
VDD5.0
-0.3 to +7.0V
V
at 5.0V operation
Input Current
Iinpeak
4
mA
-
Ambient Operating Temperature
Ta
-40 to +90
°C
-
Storage Temperature
Tstg
-50 to 125
°C
-
Recommended Operating Conditions
VSS=0V,unless specified
Parameter
Value
Symbol
Unit
Supply Voltage
VDD3.3
MIN.
3.10
Supply Voltage
VDD5.0
4.75
5.00
5.25
V
Operating Temperature
Tc*
0
25
85
°C
Input Capacitance
Cpd
-
0.3
-
pF
* Tc:Back side temperature of wafer
Attentions
TYP.
3.30
MAX.
3.60
V
at 3.3V operation
at 5.0V operation
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Electrical Characteristics
Tc*=0 to 85°C, VDD3.3=3.1 to 3.6V, VSS=0V,unless specified
Parameters
Symbol
Test Conditions
Value
MIN.
35
0.7
1.6
TYP.
50
0.94
2.1
MAX
65
1.1
2.6
Units
Supply Current
Input Voltage
Output Voltage (positive)
IDD
Vi
Vop
DC
*1
*1
Output Voltage (negative)
Von
*1
1.6
2.1
2.6
V
Gain (positive)
S21p
Single-ended, f=1MHz *1
27.0
29.0
33.0
dB
Gain (negative)
S21n
Single-ended, f=1MHz *1
27.0
29.0
33.0
dB
-3dB High Frequency
Cut-off (positive)
-3dB High Frequency
Cut-off (positive)
Input Impedance
Fcp
S21p-3dB
900
1200
1500
MHz
Fcn
S21p-3dB
850
1050
1400
MHz
Ri
f =1MHz, *1
85
100
120
Ω
Output Impedance (positive)
Rout
f =1MHz, *1
35
55
75
Ω
Output Impedance (negative)
Rout
f =1MHz, *1
35
55
75
Ω
Transimpedance (positive)
Ztp
RL=50Ω,Single-ended, *2
1.70
2.20
2.70
kΩ
1.70
2.20
2.70
kΩ
5
10
30
Transimpedance (negative)
Ztn
RL=50Ω,Single-ended ,*2
AGC time constant
Tagc
Cout=470pF
mA
V
V
µsec
* Tc:Back side temperature of wafer
*1 Test circuit is shown [Test Circuits / 1] AC Characteristics].
*2 Zt(p,n)=10^(S21(p,n)/20)×(Ri+50)/2
Optical and Electrical Characteristics
This table values are specified on condition of F0832483T. F0832483T is 2.5Gbps NRZ PIN-PD preamplifier
module using F0100504B. Test circuits of F0832483T are shown in [Test Circuits].
λ=1.3µm, VDD=VPD=+3.1~+3.6V, VSS=GND, Tcm*3=-20~+85°C, unless specified
Parameters
Symbol
Transimpedance
Ztm
O/E High Cut-off Frequency
Value
Test Conditions
Unit
MIN.
TYP.
MAX
1.6
2.0
-
kΩ
Fcoeh
RL=50Ω,Single-ended,
f =100MHz, *4
Ztm-3dB, *4
1450
1900
-
MHz
O/E Low Cut-off Frequency
Fcoel
Cout=470pF
5
17
40
kHz
Equivalent Input Noise
Inoise
f =100MHz
-
6.0
8.5
pA/√Hz
Sensitivity
Pin-min
-
-24
-21
dBm
Overload
Pin-max
2.48832Gbps, PRBS2^23-1,
BER=1E-10, *5
Output Impedance
Routm
No input, f=1MHz, *4
*3 Tcm : case temperature
*4 Show [Test Circuits / 3] Optical & Electrical Characteristics].
*5 Show [Test Circuits / 4] Sensitivity Characteristics].
+2
-
-
dBm
40
60
80
Ω
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Block Diagram
VDD3.3
VDD5.0
OUT
IN
OUTB
AGC
Rf
CAP
COUT
VSS
Symbol
Description
VDD3.3
Supply Voltage for 3.3V operation, It is not requierd for 5.0V operation.
VDD5.0
VSS
Supply Voltage for 5.0V operation, For 3.3V operation, VDD3.0 must be
opened.
Suplly Voltage Generaly Vss is connected to GND.
IN
Input
OUT
Non-inverted data output, must be AC coupled.
OUTB
Inverted data output, must be AC coupled.
CAP
Connected to outer capasitance
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Die Pad Assignment
A
12
11
10
9
8
13
7
14
6
820um
5
1
3
2
4
O
820um
No.
Symbol
Center Coordinates (um)
No.
Symbol
Center Coordinates (um)
1
VDD3.3
(75,140)
10
Vss
(395,715)
2
VDD5.0
(395,75)
11
VDD3.3
(235,715)
3
OUTB
(555,75)
12
CAP
(75,715)
4
Vss
(715,75)
13
Vss
(75,555)
5
OUTB
(715,235)
14
IN
(75,395)
6
Vss
(715,395)
7
OUT
(715,555)
8
Vss
(715,715)
O
(0,0)
9
OUT
(555,715)
A
(790,790)
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Test Circuits
1) AC Characteristics
Network Analyzer
50Ω
50Ω
Pin=-50dBm
f=300kHz to 3GHz
VDD
IN
OUT
F0100504B
Switch
OUTB
0.22uF
VSS
50Ω
Prober
2) Block Diagram of F0832483T
VDD
VPD
C2
R
Diode
C3
PD
R=3kΩ
C1=200pF
C2=100pF
C3=2200pF
Cout=470pF
CPD = 0.3pF(typical value)
VDD3.3
OUT
IN
C1
F0100504B
CAP
OUTB
COUT
VSS
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
3) Optical & Electrical Characteristics
3.3V
VPD
0.022uF
Optical
Attenuator
F0832483T
VDD
3.3V
0.022uF
Optical
Component
50Ω
Analyzer *
* Agilent 8702 Systems
4) Sensitivity Characteristics
3.3V
VPD
E/O
Optical
Converter
Attenuator
Pulse
F0832483T
0.022uF
VDD
3.3V
0.022uF
CLK
0.22uF
Pattern
Generator
Comparator
SEI
F0321818M
50Ω
OUT
OUTB
Bit Error
Rate Tester
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Examples of AC Characteristics
(1) Gain (S21p)
Ta=25°C, VDD=3.30V, VSS=0V, Pin=-50dBm, RL=50 , 300kHz to 3GHz
35
30
Gain (dB)
25
20
15
10
5
0
0.1
1
10
100
1000
10000
frequency (MHz)
(2) Gain (S21n)
Ta=25°C, VDD=3.30V, VSS=0V, Pin=-50dBm, RL=50 , 300kHz to 3GHz
35
30
Gain (dB)
25
20
15
10
5
0
0.1
1
10
100
frequency (MHz)
1000
10000
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Examples of Optical & Electrical Characteristics
(1) Frequency response of Transimpedance (Ta=25°C)
Transimpedance (pA/√Hz)
80
70
60
50
40
30
3.1V
3.3V
3.6V
20
10
0
1
10
100
1000
10000
Frequency (MHz)
(2) Frequency response of Equivalent input noise (Ta=25°C, VDD=3.3V)
18
16
Inoise (pA/√Hz)
14
12
10
8
6
4
2
0
10
100
1000
Frequency (MHz)
10000
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
(3) Typical Bit Error Rate
Data rate: 2.48832Gb/s, PRBS2^23-1, Ta=25°C, VDD=3.3V, VSS=0V, RL=50Ω
10-3
10-4
10-5
Bit Error Rate
10-6
10-7
10-8
10-9
10-10
10-11
10-12
-29
-27
-25
-23
Optical Input Power (dBm)
-21
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
(3) Eye Diagram (Ta=25°C, VDD=3.3V, 50Ωroad single-end)
(3)-1. Average input Optical Power –20dBm (λ =1310nm, 2.48832Gb/s, NRZ, PRBS2^23-1)
10 mV/div
100ps/div
(3)-2. Average input Optical Power +2dBm (λ =1310nm, 2.48832Gb/s, NRZ, PRBS2^23-1)
100mV/div
100ps/div
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
General Description
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo
current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so
on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the
input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not
always be achieved according to the employed PD and package, the assembling design, and
other technical experts. This is the major reason that there is no product lineup of packaged
transimpedance amplifiers.
Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to
design the input capacitance carefully.
Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an
important point of the design, because very faint photo-current floes into the transimpedance
amplifier. Therefore, in the assembly design of the interconnection between a PD and a
transimpedance, noise should be taken into consideration.
Recommendation
SEI basically recommends The F08 series PD preamplifier modules for customers of the
transimpedance amplifiers. In these modules, a transimpedace amplifier, a PD, and a noise filter
circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically
a fiber pigtail. The F08series lineups are the best choice for customers to using the F01series
transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design
issues and to shorten the development lead time.
Noise Performance
F0100504B based on GaAs MES FET’s shows excellent low-noise characteristics compared
with IC’s based on the silicon bipolar process. Many transmission systems often demand
superior signal-to –noise ratio, that is, high sensitivity; F0100504B is the best Choice for such
applications.
The differential circuit configuration in the output enable a complete differential operation to
reduce common mode noise: simple single ended output operation is also available.
Die-Chip Description
F0100504B is shipped like the die-chip described above. The die thickness is typically 280um ±
20um with the available pad size uncovered by a passivation film of 95um square.The material of
the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
F0100504B
3.3V/5V 2.5Gbps Transimpedance Amplifier
Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wire-pull and
die share strength. The heating time of one minute at the temperature of 310°C gave satisfactory
results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the
temperature of 150°C by a ball-bonding machine effective.
Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of quality
assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI
will not ship them if customers do not agree on this point. On the other hand, the lot assurance
test is performed completely without any problems according to SEI’s authorized rules. A
microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7.
Precautions
Owing to their small dimensions, the GaAsFET’s from which the F0100504B is designed are
easily damaged or destroyed if subjected to large transient voltages. Such transients can be
generated by power supplies when switched on if not properly decoupled. It is also possible to
induce spikes from static-electricity-charged operations or ungrounded equipment.