02.08.06 ♦ Features F0100404B 3.3V/5V 1.25 Gb/s Receiver • +3.3V or +5.0 V single power supply • transimpedance 600 Ω (50 Ω load) • Typical 2200 MHz broad bandwidth • 16 dB high gain • Over 20 dB wide dynamic range • Differential output • Excellent equivalent input noise current of 9 pA/√Hz Transimpedance Amplifier ♦ Applications • G bit Ethernet (1.25 Gb/s) • Preamplifier of an optical receiver circuit for fiber channel (1.0625 Gb/s) ♦ Functional Description The F0100404B is a stable GaAs integrated transimpedance amplifier capable of 16 dB gain at a typical 1900 MHz 3 dB-cutoff-frequency, making it ideally suited for an optical receiver circuit for a Gbit Ethernet (1.25 Gb/s), instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100404B typically specifies a high transimpedance of 600 Ω (RL=50 Ω) with a wide dynamic range of over 20 dB. Furthermore, it can operate with a supply voltage of single +3.3V or +5.0 V. It features a typical dissipation current of 43 mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance owing to parasitic capacitance of the package. F0100404B 1.25Gb/s Transimpedance Amplifier ♦ Absolute Maximum Ratings Ta=25 °C, unless specified Parameter Symbol Value Units VDD3.3 VSS-0.5 to VSS+4.0 V VDD5.0 VSS-0.5 to VSS+7.0 V Supply Current IDD 65 mA Ambient Operating Temperature Ta -40 to +90 °C Storage Temperature Tstg -55 to +125 °C Supply Voltage ♦ Recommended Operating Conditions Ta=25 °C, VSS=GND, unless specified Value Parameter Symbol Supply Voltage Units Min. Max. VDD3.3 2.8 3.6 V VDD5.0 4.5 5.25 V Ta 0 85 °C Ambient Operating Temperature ♦ Electrical Characteristics Ta=25 °C, VDD=3.3V, VSS=GND, unless specified Value Parameter Supply Current Symbol Test Conditions Units Min. Typ. Max. IDD DC 29 43 60 mA Gain(Positive) *1 S21P PIN=-50dBm f=1MHz, RL=50Ω 13.0 16.0 21.0 dB Gain(negative) *1 S21N PIN=-50dBm f=1MHz, RL=50Ω 13.0 16.0 21.0 dB High Frequency Cut-off (positive) *1 FCP PIN=-50dBm RL=50Ω 1.25 1.9 3 GHz High Frequency Cut-off (negative) *1 FCN PIN=-50dBm RL=50Ω 1.25 1.7 3 GHz Input Impedance RI f=1MHz 80 95 160 Ω Trans-Impedance(positive) *1,*2 ZTP f=1MHz 450 600 - Ω Trans-Impedance(negative) *1,*2 ZTN f=1MHz 450 625 - Ω Output Voltage(positive) *1 VOP DC 1.4 1.7 2.4 V Output Voltage(negative) *1 VON DC 1.5 2.0 2.5 V Input Voltage VIN DC 0.75 0.9 1.15 V 3.3 V Terminal Voltage *3 V33 DC 2.8 - 3.6 V S21P,N 20 *1 Defined at OUT and OUT *2 ZTP,N= RI+50 ×10 2 *3 Voltage of V DD3.3 pad when supplied the voltage(4.50~5.25 V) to VDD5.0 pad F0100404B 1.25Gb/s Transimpedance Amplifier ♦ Block Diagram VDD5.0 VDD3.3 OUT OUT Level Shift Buffer OUTB IN VSS OUTB ♦ Die Pad Description VDD3.3 Power Supply VDD5.0 Power Supply VSS Power Supply IN Input OUT Output OUTB Output F0100404B 1.25Gb/s Transimpedance Amplifier ♦ Die Pad Assignments (12) (10) (11) (9) (8) (13) (7) (14) (6) (5) (1) (2) No. Symbol (3) Center Coordinates(µm) No. (4) Symbol Center Coordinates(µm) (1) VDD3.3 (75,155) (10) VSS (395,715) (2) VDD5.0 (315,75) (11) VDD3.3 (235,715) (3) OUTB (555,75) (12) VDD3.3 (75,715) (4) VSS (715,75) (13) VSS (75,555) (5) OUTB (715,235) (14) IN (75,395) (6) VSS (715,395) (7) OUT (715,555) (8) VSS (715,715) O (0,0) (9) OUT (555,715) A (790,790) F0100404B 1.25Gb/s Transimpedance Amplifier ♦ Test Circuits 1) AC Characteristics Network Analyzer 50Ω Pin=-50 dBm f=300 kHz~3 GHz VDD IN 50Ω OUT DUT Switch VSS OUT 50Ω Prober 2) Sensitivity Characteristics VPD 5V 0.022µF E/O Converter Pulse Pattern Generator Optical Attenuater VCC PD DUT CLK 0.022µF Comparator SEI F0311018S Bit Error Rate Tester 5V 0.022µF F0100404B 1.25Gb/s Transimpedance Amplifier ♦ Examples of AC Characteristics (1) Gain (S21P) Ta=25 °C, VDD=+5.0 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz 24 21 18 S21(dB) 15 12 9 6 3 0 1M 10M 100M 1G f(Hz) (2) Gain (S21N) Ta=25 °C, VDD=+5.0 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz 24 21 18 S21(dB) 15 12 9 6 3 0 1M 10M 100M f(Hz) 1G F0100404B 1.25Gb/s Transimpedance Amplifier (3) Input Noise Current Density & Transimpedance INPUT NOISE CURRENT DENSITY & TRANSIMPEDANCE(Typical Vaiues) Freq. (MHz) Zt(Ω) (RF transimpedance) Ini(pA/√Hz) (Equivalent input noise currentdensity) 10 683 9.68 20 682 8.96 30 679 9.29 50 663 8.08 80 656 8.72 100 649 8.60 200 652 9.07 300 642 8.54 400 649 8.25 500 641 8.68 600 662 8.90 700 663 10.80 800 670 10.60 900 685 10.30 1000 685 8.96 F0100404B 1.25Gb/s Transimpedance Amplifier ♦ Typical Bit Error Rate DATA RATE: 1.25 Gb/s PRBS 223-1, Ta=25 °C, VDD=+5.0 V, VSS=GND, RL=50 Ω 10 -3 -1.2 10 0 3.0V 3.3V 3.6V 0 -1.3 10 10 -4 Bit Error Ratio -1.4 10 0 10 -5 -1.5 10 0 100-6 -1.6 10 10 -7 -1.7 10 0-8 10 -1.8 10 100-9 10 -10 0 -1.9 10 10 -11 10 -12 -30 -29 -28 -27 -26 -25 -24 -23 Optical Input Power (dBm) -22 1.25Gb/s Transimpedance Amplifier F0100404B ♦ General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. ♦ Recommendation SEI basically recommends the F08 series PINAMP modules for customers of the transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the F01 series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. ♦ Noise Performance The F0100404B based on GaAs FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; the F0100404B is the best choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. 1.25Gb/s Transimpedance Amplifier F0100404B ♦ Die-Chip Description The F0100404B is shipped like the die-chip described above. The die thickness is typically 280 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. ♦ Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 °C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective. ♦ Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7. ♦ Precautions Owing to their small dimensions, the GaAs FET’s from which the F0100404B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment. Electron Device Department