01.08.28 ♦ Features F0100106B 3.3 V / 156 Mb/s Receiver • Low voltage of +3.3 V single power supply • 15.5 kΩ high transimpedance • Typical 250 MHz broad bandwidth • 31.5 dB high gain • 0 dBm large optical input • Over 35 dB wide dynamic range • Differential output Transimpedance Amplifier ♦ Applications • Preamplifier of an optical receiver circuit for OC-3/STM-1 (156 Mb/s) ♦ Functional Description The F0100106B is a stable GaAs integrated transimpedance amplifier capable of 31.5 dB gain at a typical 250 MHz 3 dB-cutoff-frequency, making it ideally suited for a 156 Mb/s optical receiver circuit, for example, OC-3/STM-1, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100106B typically specifies a high transimpedance of 15.5 kΩ (Rs=RL=50Ω) with a wide dynamic range of over 35 dB. It also provides a large optical input overload of more than 0 dBm. Furthermore, it can operate with a low supply voltage of single +3.3 V. It features a typical dissipation current of 24 mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance owing to parasitic capacitance of the package. F0100106B 3.3 V / 156 Mb/s Transimpedance Amplifier ♦ Absolute Maximum Ratings Ta=25 °C, unless specified Parameter Symbol Value Units Supply Voltage VDD VSS-0.5 to VSS+4.0 V Supply Current IDD 50 mA Ambient Operating Temperature Ta -40 to +90 °C Storage Temperature Tstg -50 to +125 °C ♦ Recommended Operating Conditions Ta=25 °C, VDD=+3.3 V, VSS=GND, unless specified Value Parameter Symbol Units Min. Max. Supply Voltage VDD 2.9 3.6 V Ambient Operating Temperature Ta 0 85 °C ♦ Electrical Characteristics Ta=25 °C, VDD=3.3 V, VSS= GND, unless specified Value Parameter Symbol Test Conditions Units Min. Typ. Max. Supply Current IDD DC 18.0 35.0 45.0 mA Gain(Positive) S21P PIN=-50dBm f=1MHz, RL=50Ω 29.5 31.5 35.0 dB Gain(negative) S21N PIN=-50dBm f=1MHz, RL=50Ω 29.5 31.5 35.0 dB -3dB High Frequency Cut-off (positive) FCP PIN=-50dBm RL=50Ω 155 250 500 MHz -3dB High Frequency Cut-off (negative) FCN PIN=-50dBm RL=50Ω 155 240 500 MHz Input Impedance RI f=1MHz 55 0 750 900 Ω Trans-Impedance(positive) ZTP *1, f=1MHz 12.5 15.5 - KΩ Trans-Impedance(negative) ZTN *1, f=1MHz 12.5 15.5 - KΩ Output Voltage(positive) VOP DC 1.4 2.3 2.9 V Output Voltage(negative) VON DC 1.6 2.4 2.9 V VI DC 0.70 0.93 1.1 V Input Voltage *1 ZTP, N= (R I +50) 2 ×10 S21P,N 20 F0100106B 3.3 V / 156 Mb/s Transimpedance Amplifier ♦ Block Diagram VDD OUT Level Shift Buffer OUT IN VSS Variable Feedback Resistance ♦ Die Pad Description VDD VSS IN OUT OUT Supply Voltage Supply Voltage Input Output Output F0100106B 3.3 V / 156 Mb/s Transimpedance Amplifier ♦ Die Pad Assignments (13) (12) Symbol (9) (10) (14) (8) (15) (7) (16) (6) (1) No. (11) (2) (3) (4) (5) Center Coordinates(µm) No. Symbol Center Coordinates(µm) (1) VDD3.3 (75,75) (10) OUT (555,715) (2) VDD5.0 (235,75) (11) VSS (396,715) (3) VDD5.0 (395,75) (12) VDD3.3 (235,715) (4) OUT (555,75) (13) VDD3.3 (75,715) (5) VSS (715,75) (14) VSS (75,555) (6) OUT (715,235) (15) IN (75,395) (7) VSS (715,395) (16) VDD3.3 (75,235) (8) OUT (715,555) O (0,0) (9) VSS (715,715) A (790,790) F0100106B 3.3 V / 156 Mb/s Transimpedance Amplifier ♦ Test Circuits 1) AC Characteristics Network Analyzer 50Ω Pin=-50 dBm f=300 kHz~3 GHz VDD IN 50Ω OUT DUT VSS Switch OUT 50Ω Prober 2) Sensitivity Characteristics VPD 3.3V 0.022µF E/O Converter Pulse Pattern Generator Optical Attenuater VCC PD DUT CLK 0.022µF Comparator SEI F0300232Q Bit Error Rate Tester 3.3V 0.022µF F0100106B 3.3 V / 156 Mb/s Transimpedance Amplifier ♦ Examples of AC Characteristics (1) Gain (S21P) Ta=25 °C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz 39 36 33 30 Gain[dB] 27 24 21 18 15 12 9 1M 10M 100M 1G Frequency[Hz] (2) Gain (S21N) Ta=25 °C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz 39 36 33 Gain[dB] 30 27 24 21 18 15 12 9 1M 10M 100M 1G Frequency[Hz] F0100106B 3.3 V / 156 Mb/s Transimpedance Amplifier (3) Input Noise Current Density & Transimpedance INPUT NOISE CURRENT DENSITY & TRANSIMPEDANCE(Typical Vaiues) Freq. (MHz) Zt(Ω) (RF transimpedance) Ini(pA/√Hz) (Equivalent input noise currentdensity) 10 19817 0.76 20 19327 0.72 30 19507 0.79 50 19128 0.92 80 17953 0.93 100 16876 1.01 200 10915 1.63 300 6620 2.17 400 4378 2.84 500 2748 3.63 600 1874 4.34 700 1157 6.51 800 957 5.42 900 750 6.23 1000 587 7.30 F0100106B 3.3 V / 156 Mb/s Transimpedance Amplifier ♦ Typical Bit Error Rate PRBS 223-1, Ta=25 °C, VDD=3.3 V, VSS=GND, RL=50 Ω 10-3 25 °C/3.0V 25 °C/3.3V 25 °C/3.6V Bit Error Ratio 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 -42 -40 -38 -36 -34 Optical Input Power (dBm) -32 3.3 V / 156 Mb/s Transimpedance Amplifier F0100106B ♦ General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. ♦ Low Voltage Operation The F0100106B features a single 3.3 V supply operation, which is in great demand recently, because most of logic IC’s operate with the supply voltage of 3.3 V. The analog IC’s with a single 3.3 V supply for use in fiber optic communication systems are offered by only SEI. ♦ Recommendation SEI basically recommends the F08 series PINAMP modules for customers of the transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the F01 series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. ♦ Noise Performance The F0100106B based on GaAs FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; the F0100106B is the best 3.3 V / 156 Mb/s Transimpedance Amplifier F0100106B choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. ♦ Die-Chip Description The F0100106B is shipped like the die-chip described above. The die thickness is typically 280 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. ♦ Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 °C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective. ♦ Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7. ♦ Precautions Owing to their small dimensions, the GaAs FET’s from which the F0100106B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equip- Electron Device Department