EUDYNA F0100106B

01.08.28
♦ Features
F0100106B
3.3 V / 156 Mb/s Receiver
• Low voltage of +3.3 V single power supply
• 15.5 kΩ high transimpedance
• Typical 250 MHz broad bandwidth
• 31.5 dB high gain
• 0 dBm large optical input
• Over 35 dB wide dynamic range
• Differential output
Transimpedance Amplifier
♦ Applications
• Preamplifier of an optical receiver circuit for
OC-3/STM-1 (156 Mb/s)
♦ Functional Description
The F0100106B is a stable GaAs integrated transimpedance amplifier capable of 31.5
dB gain at a typical 250 MHz 3 dB-cutoff-frequency, making it ideally suited for a 156 Mb/s
optical receiver circuit, for example, OC-3/STM-1, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100106B typically specifies a high transimpedance of 15.5 kΩ (Rs=RL=50Ω)
with a wide dynamic range of over 35 dB. It also provides a large optical input overload of
more than 0 dBm. Furthermore, it can operate with a low supply voltage of single +3.3 V. It
features a typical dissipation current of 24 mA.
Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance
owing to parasitic capacitance of the package.
F0100106B
3.3 V / 156 Mb/s Transimpedance Amplifier
♦ Absolute Maximum Ratings
Ta=25 °C, unless specified
Parameter
Symbol
Value
Units
Supply Voltage
VDD
VSS-0.5 to VSS+4.0
V
Supply Current
IDD
50
mA
Ambient Operating Temperature
Ta
-40 to +90
°C
Storage Temperature
Tstg
-50 to +125
°C
♦ Recommended Operating Conditions
Ta=25 °C, VDD=+3.3 V, VSS=GND, unless specified
Value
Parameter
Symbol
Units
Min.
Max.
Supply Voltage
VDD
2.9
3.6
V
Ambient Operating Temperature
Ta
0
85
°C
♦ Electrical Characteristics
Ta=25 °C, VDD=3.3 V, VSS= GND, unless specified
Value
Parameter
Symbol
Test Conditions
Units
Min.
Typ.
Max.
Supply Current
IDD
DC
18.0
35.0
45.0
mA
Gain(Positive)
S21P
PIN=-50dBm f=1MHz,
RL=50Ω
29.5
31.5
35.0
dB
Gain(negative)
S21N
PIN=-50dBm f=1MHz,
RL=50Ω
29.5
31.5
35.0
dB
-3dB High Frequency Cut-off
(positive)
FCP
PIN=-50dBm RL=50Ω
155
250
500
MHz
-3dB High Frequency Cut-off
(negative)
FCN
PIN=-50dBm RL=50Ω
155
240
500
MHz
Input Impedance
RI
f=1MHz
55 0
750
900
Ω
Trans-Impedance(positive)
ZTP
*1, f=1MHz
12.5
15.5
-
KΩ
Trans-Impedance(negative)
ZTN
*1, f=1MHz
12.5
15.5
-
KΩ
Output Voltage(positive)
VOP
DC
1.4
2.3
2.9
V
Output Voltage(negative)
VON
DC
1.6
2.4
2.9
V
VI
DC
0.70
0.93
1.1
V
Input Voltage
*1 ZTP, N=
(R I +50)
2
×10
S21P,N
20
F0100106B
3.3 V / 156 Mb/s Transimpedance Amplifier
♦ Block Diagram
VDD
OUT
Level Shift
Buffer
OUT
IN
VSS
Variable Feedback Resistance
♦ Die Pad Description
VDD
VSS
IN
OUT
OUT
Supply Voltage
Supply Voltage
Input
Output
Output
F0100106B
3.3 V / 156 Mb/s Transimpedance Amplifier
♦ Die Pad Assignments
(13)
(12)
Symbol
(9)
(10)
(14)
(8)
(15)
(7)
(16)
(6)
(1)
No.
(11)
(2)
(3)
(4)
(5)
Center Coordinates(µm)
No.
Symbol
Center Coordinates(µm)
(1)
VDD3.3
(75,75)
(10)
OUT
(555,715)
(2)
VDD5.0
(235,75)
(11)
VSS
(396,715)
(3)
VDD5.0
(395,75)
(12)
VDD3.3
(235,715)
(4)
OUT
(555,75)
(13)
VDD3.3
(75,715)
(5)
VSS
(715,75)
(14)
VSS
(75,555)
(6)
OUT
(715,235)
(15)
IN
(75,395)
(7)
VSS
(715,395)
(16)
VDD3.3
(75,235)
(8)
OUT
(715,555)
O
(0,0)
(9)
VSS
(715,715)
A
(790,790)
F0100106B
3.3 V / 156 Mb/s Transimpedance Amplifier
♦ Test Circuits
1) AC Characteristics
Network Analyzer
50Ω
Pin=-50 dBm
f=300 kHz~3 GHz
VDD
IN
50Ω
OUT
DUT
VSS
Switch
OUT
50Ω
Prober
2) Sensitivity Characteristics
VPD
3.3V
0.022µF
E/O
Converter
Pulse
Pattern
Generator
Optical
Attenuater
VCC
PD
DUT
CLK
0.022µF
Comparator
SEI
F0300232Q
Bit Error
Rate Tester
3.3V
0.022µF
F0100106B
3.3 V / 156 Mb/s Transimpedance Amplifier
♦ Examples of AC Characteristics
(1) Gain (S21P)
Ta=25 °C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz
39
36
33
30
Gain[dB]
27
24
21
18
15
12
9
1M
10M
100M
1G
Frequency[Hz]
(2) Gain (S21N)
Ta=25 °C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz
39
36
33
Gain[dB]
30
27
24
21
18
15
12
9
1M
10M
100M
1G
Frequency[Hz]
F0100106B
3.3 V / 156 Mb/s Transimpedance Amplifier
(3) Input Noise Current Density & Transimpedance
INPUT NOISE CURRENT DENSITY & TRANSIMPEDANCE(Typical Vaiues)
Freq. (MHz)
Zt(Ω)
(RF transimpedance)
Ini(pA/√Hz)
(Equivalent input noise currentdensity)
10
19817
0.76
20
19327
0.72
30
19507
0.79
50
19128
0.92
80
17953
0.93
100
16876
1.01
200
10915
1.63
300
6620
2.17
400
4378
2.84
500
2748
3.63
600
1874
4.34
700
1157
6.51
800
957
5.42
900
750
6.23
1000
587
7.30
F0100106B
3.3 V / 156 Mb/s Transimpedance Amplifier
♦ Typical Bit Error Rate
PRBS 223-1, Ta=25 °C, VDD=3.3 V, VSS=GND, RL=50 Ω
10-3
25 °C/3.0V
25 °C/3.3V
25 °C/3.6V
Bit Error Ratio
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
10-12
-42
-40
-38
-36
-34
Optical Input Power (dBm)
-32
3.3 V / 156 Mb/s Transimpedance Amplifier
F0100106B
♦ General Description
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint
photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter
descriptions can not always be achieved according to the employed PD and package, the
assembling design, and other technical experts. This is the major reason that there is no
product lineup of packaged transimpedance amplifiers.
Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully.
Hardness to electro-magnetic interference and fluctuation of a power supply voltage is
also an important point of the design, because very faint photo-current flows into the
transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration.
♦ Low Voltage Operation
The F0100106B features a single 3.3 V supply operation, which is in great demand recently, because most of logic IC’s operate with the supply voltage of 3.3 V. The analog IC’s
with a single 3.3 V supply for use in fiber optic communication systems are offered by only
SEI.
♦ Recommendation
SEI basically recommends the F08 series PINAMP modules for customers of the
transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise
filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having
typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the
F01 series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve
troublesome design issues and to shorten the development lead time.
♦ Noise Performance
The F0100106B based on GaAs FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often
demand superior signal-to-noise ratio, that is, high sensitivity; the F0100106B is the best
3.3 V / 156 Mb/s Transimpedance Amplifier
F0100106B
choice for such applications.
The differential circuit configuration in the output enable a complete differential operation
to reduce common mode noise: simple single ended output operation is also available.
♦ Die-Chip Description
The F0100106B is shipped like the die-chip described above. The die thickness is
typically 280 µm ± 20 µm with the available pad size uncovered by a passivation film of 95
µm square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
♦ Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 °C
gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic
wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective.
♦ Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of
quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand,
the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7.
♦ Precautions
Owing to their small dimensions, the GaAs FET’s from which the F0100106B is designed
are easily damaged or destroyed if subjected to large transient voltages. Such transients
can be generated by power supplies when switched on if not properly decoupled. It is also
possible to induce spikes from static-electricity-charged operations or ungrounded equip-
Electron Device Department