F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 03.05.27 Features F0100406B - 5kΩ high transimpedance - 30dB high gain 3.3V 1.25Gbit/s NRZ Receiver - Low noise (typ.3.5pΑ/√Ηz@100MHz) Transimpedance Amplifier - Typical 900MHz O/E Bandwidth - Over 30dB wide dynamic range - 3.3V single Voltage supply operation - Differential output - AGC with proper time constant Applications - Preamplifier of an optical receiver circuit for GbE (1.25Gbit/s) Functional Description The F0100406B is stable GaAs integrated transimpedance amplifier. Typical Applications are for 1.25Gbit/s optical receiver circuit, for example, GbE, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100406B typically specifies a high transimpedance of 5.0Ω (RL=50Ω) at a typical 900MHz O/E bandwidth (-3dB-cutoff frequency) with a dynamic range of over 30dB. It also provides a large optical input overload of more than +2dBm. Furthermore, it can operate with a low supply voltage of single +3.3V. It features a typical dissipation current of 45mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier cannot operate with the maximum performance owing to parasitic element of the package. F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier Absolute Maximum Ratings All published data at Ta=25°C unless otherwise indicated. This device isn’t guaranteed opto-electric characteristics in these ranges. At least, this device isn’t broken in these ranges. VSS=0V Parameter Symbol Value Units Attentions Supply Voltage VDD -0.3 to +5.0V V Input Current Iinpeak 4 mA - Ambient Operating Temperature Ta -40 to +90 °C - Storage Temperature Tstg -50 to 125 °C - Recommended Operating Conditions VSS=0V,unless specified Parameter Value Symbol Unit Supply Voltage VDD MIN. 3.10 Operating Temperature Tc* 0 25 85 °C Input Capacitance Cpd - 0.6 - pF * Tc:Back side temperature of wafer TYP. 3.30 MAX. 3.60 V Attentions F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier Electrical Characteristics Tc*=0 to 85°C, VDD=3.1 to 3.6V, VSS=0V,unless specified Parameters Symbol Test Conditions Value MIN. - TYP. 45 0.95 2.1 Units MAX - Supply Current Input Voltage Output Voltage (positive) IDD Vi Vop DC *1 *1 mA V V Output Voltage (negative) Von *1 - 2.1 - V Gain (positive) S21p Single-ended, f=1MHz *1 - 30.0 - dB Gain (negative) S21n Single-ended, f=1MHz *1 - 30.0 - dB -3dB High Frequency Cut-off (positive) -3dB High Frequency Cut-off (positive) Input Impedance Fcp S21p-3dB - 1200 - MHz Fcn S21p-3dB - 1100 - MHz Ri f =1MHz, *1 - 190 - Ω Output Impedance (positive) Rout f =1MHz, *1 - 55 - Ω Output Impedance (negative) Rout f =1MHz, *1 - 55 - Ω Transimpedance (positive) Ztp RL=50Ω,Single-ended, *2 - 5 - kΩ Transimpedance (negative) Ztn RL=50Ω,Single-ended ,*2 - 5 - kΩ AGC time constant Tagc Cout=470pF - 24 - µsec * Tc:Back side temperature of wafer *1 Test circuit is shown [Test Circuits / 1] AC Characteristics]. *2 Zt(p,n)=10^(S21(p,n)/20)×(Ri+50)/2 Optical and Electrical Characteristics This table values are specified on condition of F0832483T. F0832483T is 2.5Gbps NRZ PIN-PD preamplifier module using F0100504B. Test circuits of F0832483T are shown in [Test Circuits]. λ=1.3µm, VDD=VPD=+3.1~+3.6V, VSS=GND, Tcm*3=-20~+85°C, unless specified Parameters Symbol Value Test Conditions Unit MIN. TYP. MAX - 5 - kΩ - 900 - MHz Transimpedance Ztm O/E High Cut-off Frequency Fcoeh RL=50Ω,Single-ended, f =100MHz, *4 Ztm-3dB, *4 O/E Low Cut-off Frequency Fcoel Cout=470pF - 17 - kHz Equivalent Input Noise Inoise f =100MHz - 3.5 - pA/√Hz Sensitivity Pin-min - -29 - dBm Overload Pin-max 2.48832Gbps, PRBS2^23-1, BER=1E-10, *5 +1 - - dBm Output Impedance Routm - 55 - Ω No input, f=1MHz, *4 *3 Tcm : case temperature *4 Show [Test Circuits / 3] Optical & Electrical Characteristics]. *5 Show [Test Circuits / 4] Sensitivity Characteristics]. F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier Block Diagram VDD OUT IN OUTB AGC Rf CAP COUT VSS Symbol Description VDD Supply Voltage VSS Suplly Voltage Generaly Vss is connected to GND. IN Input OUT Non-inverted data output, must be AC coupled. OUTB Inverted data output, must be AC coupled. CAP Connected to outer capasitance F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier Die Pad Assignment A 7 6 5 4 8 3 9 1 660um 2 O 720um No. Symbol Center Coordinates (um) No. Symbol Center Coordinates (um) 1 VDD (65,65) 7 CAP (65,565) 2 OUTB (625,65) 8 VSS (65,415) 3 VSS (625,315) 9 IN (65,265) 4 OUT (625,565) 5 VSS (420,565) O (0,0) 6 VDD (270,565) A (790,790) F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier Test Circuits 1) AC Characteristics Network Analyzer 50Ω 50Ω Pin=-50dBm f=300kHz to 3GHz VDD IN OUT F0100406B Switch OUTB 0.22uF VSS 50Ω Prober 2) Block Diagram of F0831252T VDD VPD R Diod C2 R=3kΩ C1=200pF C2=100pF Cout=470pF CPD = 0.6pF(typical value) PD VDD IN OUT C1 F0100406 CAP COUT OUTB VSS VSS F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 3) Optical & Electrical Characteristics 3.3V VPD 0.022uF Optical Attenuator F0831252T VDD 3.3V 0.022uF Optical Component 50Ω Analyzer * * Agilent 8702 Systems 4) Sensitivity Characteristics 3.3V VPD E/O Optical Converter Attenuator Pulse F0831252T 0.022uF VDD 3.3V 0.022uF CLK 0.22uF Pattern Generator Comparator SEI F0321818M 50Ω OUT OUTB Bit Error Rate Tester F0100406B Examples of AC Characteristics 3.3V 1.25Gbit/s Transimpedance Amplifier F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current floes into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. Recommendation SEI basically recommends The F08 series PD preamplifier modules for customers of the transimpedance amplifiers. In these modules, a transimpedace amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08series lineups are the best choice for customers to using the F01series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. Noise Performance F0100406B based on GaAs MES FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often demand superior signal-to –noise ratio, that is, high sensitivity; F0100406B is the best Choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. Die-Chip Description F0100406B is shipped like the die-chip described above. The die thickness is typically 280um ± 20um with the available pad size uncovered by a passivation film of 95um square.The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wire-pull and die share strength. The heating time of one minute at the temperature of 310°C gave satisfactory results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the temperature of 150°C by a ball-bonding machine effective. Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7. Precautions Owing to their small dimensions, the GaAsFET’s from which the F0100406B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.