Preliminary 02.05.21 ♦ Features • 1.5kΩ high transimpedance • 28 dB gain • Low noise (typ.8.2 pA/√Hz@100 MHz) • Typical 2400 MHz O/E bandwidth • Over 25 dB wide dynamic range • 3.3 V or 5.0 V single voltage supply operation • Differential output F0100505B 3.3 V /5V 2.5 Gb/s NRZ Receiver Transimpedance Amplifier ♦ Applications • Preamplifier of an optical receiver circuit for OC-48/STM-16 (2.7 Gb/s (FEC available)) ♦ Functional Description The F0100505B is stable GaAs integrated transimpedance amplifier. Typical Applications are for 2.7 Gb/s (FEC avaiable) optical receiver circuit, for example, OC-48/STM-16, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100505B typically specifies a high transimpedance of 1.5 kΩ (RL=50 Ω) at a typical 2400 MHz O/E bandwidth (-3 dB-cutoff frequency) with a dynamic range of over 25 dB. It also provides a large optical input overload of more than +1 dBm. Furthermore, it can operate with a low supply voltage of single +3.3 V. It features a typical dissipation current of 45 mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier cannot operate with the maximum performance owing to parasitic element of the package. F0100505B 3.3 V / 5V 2.5Gb/s Transimpedance Amplifier ♦ Absolute Maximum Ratings All published data at Ta=25 °C unless otherwise indicated. This device isn't guaranteed opto-electric characteristics in these ranges. At least, this device isn't broken in these ranges. VSS=0 V Parameter Symbol Value Units Attentions Supply Voltage VDD3.3 -0.3 to +4.0 V V at 3.3 V operation Supply Voltage IDD5.0 -0.3 to +7.0 V mA at 5.0 V operation Input Current Iinpeak 4 mA - Ambient Operating Temperature Ta -40 to +90 °C - Storage Temperature Tstg °C - -50 to 125 ♦ Recommended Operating Conditions VSS=0 V, unless specified Parameter Value Symbol Min. Typ. Max. Units Attentions Supply Voltage VDD3.3 3.10 3.30 3.60 V at 3.3 V operation Supply Voltage IDD5.0 4.75 5.00 5.25 V at 5.0 V operation Ambient Operating Temperature Ta 0 25 85 °C Input Capacitance Cpd - 0.25 - pF at Vb=-2 V* * Vb is the bias between IN and VPD. Show [Test Circuits / 2 ] Block Diagram of F0832483T] F0100505B 3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier ♦ Electrical Characteristics Ta=25 °C, VDD3.3=3.3 V, VSS=0, unless specified Value Parameter Symbol Test Conditions Units Min. Typ. Max. Supply Current IDD DC - 50 - mA Input Voltage Vi *1 - 0.96 - V Output Voltage(positive) Vop *1 - 2.13 - V Output Voltage(negative) Von *1 - 2.04 - V Gain(positive) S21p Single-ended, f=1 MHz *1 - 27.6 - dB Gain(negative) S21n Single-ended, f=1 MHz *1 - 27.4 - dB -3dB High Frequency Cut-off (positive) Fcp S21p-3dB - 1130 - MHz -3dB High Frequency Cut-off (negative) Fcn S21p-3dB - 1010 - MHz Input Impedance Ri f=1 MHz, *1 - 67 - Ω Output Impedance(positive) Rout f=1 MHz, *1 - 59 - Ω Output Impedance(negative) Rout f=1 MHz, *1 - 55 - Ω Transimpedance(positive) Ztp RL=-50 Ω, Single-ended, *2 - 1.5 - kΩ Transimpedance(negative) Ztn RL=-50 Ω, Single-ended, *2 - 1.5 - kΩ AGC time constant tagc Cout=470 pF - 10 - µsec * 1 Test circuit is shown [Test Circuits / 1] AC Characteristics]. * 2 Zt(p,n)=10^(S21(p,n)/20×(Ri+50)/2 ♦ Optical and Electrical Characteristics This table values are specified by F0832671T. F0832671T is 2.7 Gb/s (FEC available) NRZ PIN-PD preamplifier module using F0100505B. Test circuits of F0832671T are shown in [Test Circuits]. Ta=25 °C, VDD3.3=3.3 V, VSS=0 V, unless specified Parameter Transimpedance Symbol Ztm Test Conditions RL=50 Ω, Single-ended f=100 MHz,*3 Min. Value Typ. Max. Units - 1.4 - kΩ O/E High Cut-off Frequency Fcoeh Ztm-3dB,*3 - 2400 - MHz O/E Low Cut-off Frequency Fcoel Cout=470pF - 17 - kHz Equivalent Input Noise Inoise f=100 MHz - 8.2 - pA/√Hz - -23 - dBm +2 - - dBm - TBD - Ω Sensitivity Pin-min Overload Pin-max Output Impedance Routm 2.66606 Gb/s, PRBS2^23-1, BER=1E-10,*4 No input, f=1 MHz, *3 * 3 Shown [Test Circuits/3] Optical & Electrical Characteristics]. * 4 Shown [Test Circuits/4] Sensitivity Characteristics]. F0100505B 3.3 V / 5V 2.5Gb/s Transimpedance Amplifier ♦ Block Diagram VDD5.0 VDD3.3 OUT IN OUTB CAP Rf AGC Cout VSS Symbol VDD3.3 VDD5.0 VSS IN OUT OUTB CAP Description Supply Voltage for 3.3 V operation, it is not required for 5.0 V operation. Supply Voltage for 5.0 V operation, For 3.3 V operation, VDD3.0 must be opened. Supply Voltage Generally VSS is connected to GND. Input Non-inverted data output, must be AC coupled. Inverted data output, must be AC coupled. Connected to outer capacitance F0100505B 3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier ♦ Die Pad Assignments A 12 11 10 9 8 13 7 14 6 820µm 5 1 2 3 4 O 820µm No. Symbol Center Coordinates (µm) No. Symbol Center Coordinates (µm) 1 VDD3.3 (75,140) 10 VSS (395,715) 2 VDD5.0 (395,75) 11 VDD3.3 (235,715) 3 OUTB (555,75) 12 CAP (75,715) 4 VSS (715,75) 13 VSS (75,555) 5 OUTB (715,235) 14 IN (75,395) 6 VSS (715,395) 7 OUT (715,555) 8 VSS (715,715) O (0,0) 9 OUT (555,715) A (790,790) F0100505B 3.3 V / 5V 2.5Gb/s Transimpedance Amplifier ♦ Test Circuits 1) AC Characteristics Network Analyzer 50 Ω 50 Ω Pin=-50dBm f=300kHz to 3GHz VDD OUT IN F0100505B Switch OUTB VSS 0.22µF 50 Ω Prober 2) Block Diagram of F0832483T VDD VPD R=3 kΩ C1=200 pF C2 R Diode C3 C2=100 pF C3=2200 pF Cout=470 pF CPD=0.25 pF (typical value) PD VDD3.3 OUT IN C1 F0100505B CAP OUTB COUT VSS F0100505B 3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier 3) Optical & Electrical Characteristics 3.3V 0.022µF VPD Optical Attenuator F0832671T VDD 3.3V 0.022µF Optical Component Analyzer* 50Ω *Agilent 8702 Systems 4) Sensitivity Characteristics 3.3V 0.022µF VPD E/O Converter Pulse Pattern Generator Optical Attenuator F0832671T VDD 3.3V 0.022µF CLK 0.022µF Comparator SEI F0321818M OUT OUTB Bit Error Rate Tester 50Ω F0100505B 3.3 V / 5V 2.5Gb/s Transimpedance Amplifier ♦ Examples of AC Characteristics 1) Gain (S21p) Ta=25 °C, VDD=3.30 V, VSS=0 V, Pin=-50 dBm, RL=50 Ω, 300 kHz to 3 GHz 35 30 Gain(dB) 25 20 15 10 5 0 0.1 1 10 100 1000 10000 Frequency(MHz) 2) Gain (S21n) Ta=25 °C, VDD=3.30 V, VSS=0 V, Pin=-50 dBm, RL=50 Ω, 300 kHz to 3 GHz 35 30 Gain(dB) 25 20 15 10 5 0 0.1 1 10 100 Frequency(MHz) 1000 10000 F0100505B 3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier ♦ Examples of Optical & Electrical Characteristics 1) Frequency response of Transimpedance (Ta=25 °C) Transimpedance(dBΩ) 80 70 60 50 40 3.6V 30 3.3V 20 3.1V 10 0 0.1 1 10 100 1000 10000 Frequency (MHz) 2) Typical Bit Error Rate Date rate : 2.666,6Gb/s, PRBS2^23-1, Ta=25°C, VDD=3.3V, VSS=0V, RL=50Ω 10-3 10-4 Bit Error Rate 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 -29 -27 -25 O p tical In p ut Power -23 (dBm ) -21 3.3 V / 5V 2.5Gb/s Transimpedance Amplifier F0100505B 3) Eye Diagram (Ta=25 °C, VDD=3.3 V, RL=50 Ω road single-end) Average input Optical Power -20 dBm (λ=1310nm, 2.66606 Gb/s, NRZ, PRBS2^23-1) 5 mV/div 100 ps/div Average input Optical Power +2 dBm (λ=1310nm, 2.66606 Gb/s, NRZ, PRBS2^23-1) 100 mV/div 100 ps/div 3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier F0100505B ♦ General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. ♦ Recommendation SEI basically recommends the F08 series PINAMP modules for customers of the transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the F01 series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. ♦ Noise Performance The F0100505B based on GaAs FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; the F0100505B is the best choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. 3.3 V / 5V 2.5Gb/s Transimpedance Amplifier F0100505B ♦ Die-Chip Description The F0100505B is shipped like the die-chip described above. The die thickness is typically 280 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. ♦ Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 °C gave satisfactory results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective. ♦ Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7. ♦ Precautions Owing to their small dimensions, the GaAs FET’s from which the F0100505B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment. Electron Device Department