FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 12.5 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Limit Typ. Max. Unit Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with gate resistance of 250Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 800 1200 mA Transconductance gm VDS = 5V, IDS = 500mA - 400 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 40mA -1.0 -2.0 -3.5 V -5 - - V 31.5 32.5 - dBm 6.0 7.0 - dB - 28 - % - 10 12 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -40µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12.5 GHz Channel to Case CASE STYLE: MH Edition 1.1 August 1999 G.C.P.: Gain Compression Point 1 FLX207MH-12 X, Ku Band Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 1000 POWER DERATING CURVE VGS =0V 800 Drain Current (mA) 12 8 4 -0.5V 600 -1.0V 400 -1.5V 200 -2.0V 50 100 150 0 200 2 f = 12.5GHz IDS ≈ 0.6 IDSS VDS=10V VDS=8.5V 24 P1dB (dBm) 40 20 ηadd (%) Pout ηadd 10 f = 12.5 GHz IDS ≈ 0.6 IDSS 30 26 8 P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER 28 6 Drain-Source Voltage (V) Case Temperature (°C) 32 4 33 P1dB 32 31 30 30 20 29 10 8 16 18 20 22 24 26 40 ηadd 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 16 FLX207MH-12 X, Ku Band Power GaAs S11 S22 +j50 8 +j25 +j100 9 14GHz S21 S12 +90° 10 12 13 14GHz 12 +j250 11 +j10 10 9 8 0 11 11 13 8 10 9 12 10 25 50Ω 100 10 12 11 8 250 180° 1.6 1.2 .8 -j25 14GHz 0° .02 SCALE FOR |S12| -j250 13 .4 SCALE FOR |S21| -j10 13 14GHz .04 .06 .08 -j100 -j50 -90° S11 S-PARAMETERS VDS = 10V, IDS = 480mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 500 .954 -136.6 7.426 115.6 .021 1000 .945 -161.8 4.100 105.6 8000 .892 101.8 .684 8500 .877 94.1 9000 .853 9500 S22 MAG ANG 33.0 .312 -147.0 .021 32.1 .363 -147.5 112.8 .017 138.1 .832 175.4 .685 114.2 .017 136.1 .857 173.1 85.3 .702 113.2 .019 136.5 .872 170.1 .831 75.3 .735 113.3 .020 128.3 .875 167.3 10000 .778 63.9 .781 109.2 .022 130.8 .898 163.8 10500 .713 51.0 .806 109.0 .030 117.1 .917 159.0 11000 .609 37.1 .967 104.9 .031 105.6 .903 154.8 11500 .466 21.2 1.051 94.2 .035 95.1 .887 150.9 12000 .251 9.9 1.167 85.6 .040 83.4 .894 142.8 12500 .087 73.9 1.214 70.1 .039 65.3 .873 136.8 13000 .307 108.5 1.114 55.1 .038 39.5 .858 129.7 13500 .475 90.2 1.053 41.7 .038 10.3 .873 122.5 14000 .603 73.4 .926 18.0 .043 -14.2 .872 109.5 Download S-Parameters, click here 3 FLX207MH-12 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style "MH" Metal-Ceramic Hermetic Package 2-Ø1.8±0.15 (0.071) 0.1 (0.004) 3.5±0.15 (0.138) 1 3 2 0.5 (0.020) 1.0 Min. (0.039) 4 1.65±0.15 (0.065) 2.8 Max. (0.110) 3.5±0.3 (0.138) 1.0 (0.039) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 6.7±0.2 (0.264) 10.0±0.3 (0.394) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4