EUDYNA FLL21E045IY

FLL21E045IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET
・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.)
・Broad Frequency Range : 2110 to 2170MHz
・High Reliability
DESCRIPTION
The FLL21E045IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
T stg
T ch
Rating
Unit
32
-3
92
65 to +175
200
V
V
W
o
C
o
C
Limit
Unit
<28
<176
>-15.9
155
V
mA
mA
o
C
Condition
o
T C=25 C
(Case Tem perature)
o
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C)
Item
Symbol
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF
IGR
T ch
Condition
RG=2Ω
RG=2Ω
o
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C)
Item
Symbol
Pinch-Off Voltage
Gate-Source Breakdown Voltage
3rd Order Intermodulation Distortion
Power Gain
Drain Efficiency
VP
VGSO
IM 3
GP
ηD
Adjacent Channel Leakage Power Ratio
Themal Resistance
ACLR
Rth
Condition
VDS=5V, IDS=75.4mA
IGS=-754uA
VDS=28V
IDS(DC)=500mA
Pout=40dBm(Avg.)
Note 1
Channel to Case
Limit
Min.
-0.1
-5
14.5
-
Typ.
-0.2
-33
15.5
26
Max.
-0.5
-30
-
-
-35
1.7
1.9
Unit
V
V
dBc
dB
%
dBc
C/W
o
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f 0-15MHz and f 1+15MHz.
ACLR : f 0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f 0+/-5MHz
ESD
CLASS III
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k Ω)
CASE STYLE : IY
Edition 1.1
June 2004
1
2000V ~
FLL21E045IY
L,S-band High Power GaAs FET
50
Output Power & Drain Efficiency vs. Input Power
VDS=28V, IDS=500mA, f=2.14GHz
50
100
48
48
46
46
44
42
40
38
36
2.10
2.12
2.14
2.16
2.18
2.20
Frequncy [GHz]
Pin=22dBm
Pin=28dBm
Pin=24dBm
Pin=30dBm
Pin=26dBm
Pin=32dBm
90
80
Pout
44
70
42
60
40
50
38
40
ηd
36
30
34
20
32
10
30
0
18
20
22
24
26
28
30
32
34
36
Input Power [dBm]
-25
40
-30
35
-30
35
-35
30
-35
30
-40
25
-40
25
-45
20
-45
20
-50
15
-50
15
-55
10
-55
10
-60
5
-60
ACLR[dBc]
40
Drain Efficiency[%]
IMD[dBc]
-25
5
24 26 28 30 32 34 36 38 40 42 44
24 26 28 30 32 34 36 38 40 42 44
Output Power[dBm]
Output Power[dBm]
IM3
IM5
Drain Efficiency
+/-5MHz
2
+/-10MHz
Drain Efficiency[%]
Single-Carrier ACLR vs. Output Power
VDS=28V, IDS=500mA, f0=2.135GHz
W-CDMA 3GPP BS-1 64ch Modulation
Two-Carrier IMD(ACLR) vs. Output Power
VDS=28V, IDS=500mA, f0=2.135, f1=2.145GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Drain Efficiency
Drain Efficiency [%]
Output Power [dBm]
Output Power [dBm]
Output Power vs. Frequency
VDS=28V, IDS=500mA
FLL21E045IY
L,S-band High Power GaAs FET
■Board Layout
VGS
C14 C13
C11
R2
C17
C16
C15
C10
VDS
C18
C12
R1
C1
C3
C2
C4
L1
C8
C9x5
εr=3.5 t=0.8mm
■ Circuit Diagram of the Board
C14 C13 C12 C11 C10
C15 C16 C18
C17
R2
Z5
Z1
Z2
C1
Z1, Z11
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z3 R1
Z6
Z4
C8
C3
Z7
Z8
L11
Z9
Z10
C4
Z11
C2
C9x5
9.00mm x 1.78mm Transmission Line
25.5mm x 1.78mm Transmission Line
7.30mm x 1.78mm Transmission Line
6.00mm x 13.0mm Transmission Line
23.0mm x 0.50mm Transmission Line
3.00mm x 25.0mm Transmission Line
3.00mm x 13.0mm Transmission Line
23.0mm x 1.50mm Transmission Line
7.30mm x 1.78mm Transmission Line
25.5mm x 1.78mm Transmission Line
C1,C2
C3
C4
C8
C9
C10,C15
C11,C16
C12,C17
C13,C14
3
10pF
1.5pF
2.0pF
1.5pF
0.1uF
20pF
100nF
1000pF
10uF
C18
L1
R1
R2
22uF
3.3nF
2.0ohm
51ohm
Board
input size εr=3.5 t=0.8mm
50mm x 50mm
output size εr=3.5 t=0.8mm
50mm x 50mm
FLL21E045IY
L,S-band High Power GaAs FET
■ S-Parameters @VDS=28V, IDS=500mA, f=1.0 to 3.0 GHz
+50j
+25j
+100j
10Ω
2.1
[GHz]
25
+250j
+10j
2.0G H z
2.0G H z
0
∞
2.1
-10j
2.2
-250j
2.2
-25j
-100j
S 11
-50j
S 22
+90°
2.2
2.1
4
Scale for |S21|
2.2
2.0GHz
2.1
2.0GHz
0.15
0.3
-90°
0°
Scale for |S 12|
±180° 8
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang)
0.961
-176.09
0.475
0.09
0.002
72.44
0.941
-173.21
0.955
-176.12
0.465
-4.08
0.003
72.31
0.941
-174.11
0.955
-176.17
0.474
-8.51
0.003
73.23
0.938
-174.90
0.946
-176.41
0.512
-13.28
0.004
78.24
0.939
-175.61
0.938
-177.38
0.574
-19.09
0.005
73.43
0.937
-176.50
0.929
-178.32
0.676
-25.53
0.007
68.02
0.928
-177.31
0.903
-179.71
0.858
-34.12
0.008
60.18
0.922
-178.49
0.868
178.18
1.156
-46.13
0.011
51.50
0.901
179.94
0.802
175.71
1.676
-62.08
0.015
37.37
0.877
178.21
0.676
173.72
2.636
-86.18
0.022
13.74
0.879
174.82
0.482
178.20
4.384
-122.79
0.033
-20.98
0.898
162.03
0.441
-135.80
6.693
171.86
0.040
-88.96
0.634
102.88
0.490
-131.54
6.712
162.88
0.039
-97.96
0.560
90.14
0.540
-130.55
6.645
154.26
0.038
-107.99
0.484
75.71
0.596
-130.03
6.434
145.37
0.036
-116.93
0.414
58.35
0.649
-130.79
6.205
136.83
0.034
-127.37
0.353
36.86
0.692
-132.19
5.853
128.55
0.031
-133.60
0.323
12.79
0.731
-133.90
5.525
121.00
0.028
-145.32
0.321
-11.35
0.761
-135.91
5.126
113.86
0.026
-151.02
0.345
-32.46
0.783
-137.02
4.769
107.68
0.023
-156.69
0.384
-48.97
0.811
-138.98
4.402
101.97
0.021
-162.23
0.426
-61.84
0.823
-140.79
4.071
96.45
0.018
-168.12
0.472
-72.06
0.883
-148.92
1.953
62.43
0.006
140.62
0.742
-115.08
0.907
-152.47
1.125
44.59
0.003
131.01
0.838
-128.68
0.919
-154.44
0.742
32.86
0.002
67.07
0.885
-135.53
0.923
-156.00
0.539
24.36
0.000
145.10
0.909
-139.52
0.928
-157.30
0.423
17.45
0.001
-166.69
0.920
-141.86
0.930
-158.48
0.353
10.90
0.002
133.58
0.925
-143.60
0.929
-159.87
0.310
6.75
0.003
143.82
0.928
-145.78
0.925
-161.40
0.292
0.72
0.002
121.54
0.916
-147.36
S 12
S 21
4
FLL21E045IY
L,S-band High Power GaAs FET
■ IY Package Outline
9.98
R1.524
4.826
3.251
9.779
4.826
12.7
0.152
29.50
1.575
34.036
Unit : mm
5
FLL21E045IY
L,S-band High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
6