FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATING Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PT T stg T ch Rating Unit 32 -3 134 65 to +175 200 V V W o C o C Limit Unit <28 <352 >-31 155 V mA mA o C Condition o T C=25 C (Case Tem perature) o RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item Symbol DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature VDS IGF IGR T ch Condition RG=2Ω RG=2Ω o ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item Symbol Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency VP VGSO IM 3 GP ηD Adjacent Channel Leakage Power Ratio Themal Resistance ACLR Rth Condition VDS=5V, IDS=151mA IGS=-1.51mA VDS=28V IDS(DC)=750mA Pout=43dBm(Avg.) Note 1 Channel to Case Limit Min. -0.1 -5 14.5 - Typ. -0.2 -33 15.5 26 Max. -0.5 -30 - - -35 1.1 1.3 Unit V V dBc dB % dBc C/W o Note 1 : IM3, ACLR and Gain test conditions as follows IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f 0-15MHz and f 1+15MHz. ACLR : f 0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f 0+/-5MHz CLASS III ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k Ω) CASE STYLE : IY Edition 1.1 June 2004 1 2000V ~ FLL21E090IY L,S-band High Power GaAs FET Output Power & Drain Efficiency vs. Input Power VDS=28V, IDS=750mA, f=2.14GHz 52 100 50 90 2.1 2.12 2.14 2.16 2.18 2.2 Frequency [GHz] 46 Pin=26dBm Pin=34dBm Pin=38dBm 60 42 50 40 40 38 30 ηd 36 20 34 10 32 0 22 24 Pin=30dBm 26 28 30 32 34 36 38 40 Input Pow er [dBm ] Single-Carrier ACLR vs. Output Power VDS=28V IDS=750mA fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation Two-Carrier IMD(ACLR) vs. Output Power VDS=28V IDS=750mA fo=2.1325, f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation 35 -25 35 -30 30 -30 30 -35 25 -35 25 -40 20 -40 20 -45 15 -45 15 -50 10 -50 10 -55 5 -55 5 -60 ACLR[dBc] -25 Drain Efficiency[%] IMD[dBc] 70 44 20 Pin=22dBm 80 P out 0 -60 0 26 28 30 32 34 36 38 40 42 44 46 26 28 30 32 34 36 38 40 42 44 46 Output Power[dBm] Output Power[dBm] IM3 IM5 Drain Efficiency +/-5MHz 2 +/-10MHz Drain Efficiency Drain Efficiency [%] 48 Drain Efficiency[%] 52 50 48 46 44 42 40 38 36 34 32 30 2.08 Output Power [dBm] Output Power [dBm] Output Power vs. Frequency VDS=28V, IDS=750mA FLL21E090IY L,S-band High Power GaAs FET CW IMD vs. Tone Spacing @VDS=28V, IDS=750mA, fc=2.14GHz Pout=43dBm -20 -25 ΔIM3[dBc] -30 -35 -40 -45 -50 -55 -60 0.1 1 10 100 Tw o-Tone Spacing[MHz] 3 FLL21E090IY L,S-band High Power GaAs FET ■Board Layout VGS C11 C14 C13 R2 C17 C16 C15 C10 VDS C18 C12 R1 C1 C3 C2 C5 C6 C7 C4 L1 C8 C9x5 εr=3.5 t=0.8mm ■ Circuit Diagram of the Board C14 C13C12 C11 C10 C15 C16 C18 C17 R2 Z8 Z5 Z6 Z2 Z1 C1 Z3 C3 R1 Z4 C8 Z7 Z9 C2 L1 C5 C4 Z11 Z10 C6 C7 C9x5 Z1, Z11 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 9.00mm x 1.78mm Transmission Line 26.2mm x 1.78mm Transmission Line 6.60mm x 1.78mm Transmission Line 6.00mm x 13.0mm Transmission Line 23.0mm x 0.50mm Transmission Line 3.00mm x 25.0mm Transmission Line 3.00mm x 13.0mm Transmission Line 23.0mm x 1.50mm Transmission Line 10.8mm x 1.78mm Transmission Line 22.0mm x 1.78mm Transmission Line C1,C2 10pF C3 1.0pF C4 2.0pF C5,C6,C7 0.5pF C8 1.5pF C9 0.1uF C10,C15 20pF C11,C16 100nF C12,C17 1000pF C13,C14 10uF 4 C18 L1 R1 R2 22uF 3.3nF 2.0ohm 51ohm Board input size εr=3.5 t=0.8mm 50mm x 50mm output size εr=3.5 t=0.8mm 50mm x 50mm FLL21E090IY L,S-band High Power GaAs FET ■S-Parameters @VDS=28V, IDS=750mA, f=1.0 to 3.0 GHz +50j [GHz] +25j 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 S11 +100j S22 +10j +250j 2.1 0 2.0GHz 2.2 50Ω 2.0GHz - 10j ∞ 2.1 2.2 - 250j - 100j - 25j - 50j +90° S21 S12 3.0 2.5 ±180° 0.08 0.1 0° Scale for S 21 S cale for S 12 2.0 G H z 2.2 2.1 -90° 5 M AG 0.9634 0.9567 0.9592 0.9583 0.9524 0.9571 0.9465 0.9396 0.918 0.8744 0.7691 0.6787 0.6782 0.6957 0.7087 0.7284 0.749 0.7702 0.785 0.8009 0.8271 0.84 0.9158 0.9361 0.9386 0.9455 0.9501 0.9493 0.9576 0.9579 ANG -172.52 -171.64 -170.81 -170.19 -169.69 -168.96 -168.85 -168.87 -169.14 -169.91 -169.68 -155.22 -153.28 -151.96 -150.22 -148.84 -147.98 -147.49 -146.95 -146.8 -146.95 -146.99 -149.95 -151.12 -151.16 -150.74 -150.74 -149.64 -149.8 -149.24 M AG 0.185 0.1738 0.1796 0.1856 0.2063 0.2399 0.3019 0.4171 0.5432 0.8481 1.4267 2.3705 2.4453 2.5065 2.5554 2.5928 2.6012 2.6085 2.5937 2.5666 2.5421 2.5068 1.781 0.9958 0.5194 0.3276 0.1998 0.1465 0.1235 0.0903 ANG 21.926 22.708 23.891 22.494 23.295 20.502 19.887 9.7863 -0.3251 -13.596 -39.755 -86.126 -92.117 -98.556 -104.83 -111.25 -117.67 -124.11 -130.41 -136.59 -142.62 -148.63 154.66 115.92 93.577 82.725 72.912 77.149 67.632 65.358 M AG 0.0011 0.0012 0.0014 0.0016 0.0016 0.0026 0.0031 0.0039 0.004 0.0056 0.0064 0.0054 0.0049 0.0047 0.0044 0.0038 0.0035 0.0032 0.0034 0.0032 0.0033 0.0033 0.0048 0.0035 0.0019 0.0013 0.001 0.0019 0.0022 0.004 ANG 91.071 105.34 106.3 119.39 112.69 122.64 127.43 122.24 113.26 111.46 73.076 15.023 4.6718 -10.341 -21.605 -31.755 -51.932 -66.043 -81.24 -99.392 -115.92 -139.05 129.47 97.983 94.352 88.626 -156.21 -171.48 -161.33 -162.61 M AG 0.9638 0.9571 0.9589 0.9571 0.9566 0.9558 0.9539 0.9461 0.9385 0.9276 0.9273 0.9018 0.8894 0.8739 0.8562 0.8371 0.8094 0.7809 0.7498 0.7194 0.6822 0.6444 0.4764 0.7412 0.8586 0.9035 0.9267 0.9347 0.947 0.947 ANG -171.69 -171.44 -170.97 -170.73 -170.11 -169.73 -169.55 -169.47 -169.79 -170.16 -171.5 -177.51 -178.55 -179.66 179.2 178.16 177.06 176.19 175.39 174.76 174.43 174.64 -147.42 -138.53 -142.64 -145.25 -147.06 -147.9 -148.56 -148.91 FLL21E090IY L,S-band High Power GaAs FET ■IY Package Outline 9.98 R1.524 4.826 3.251 9.779 4.826 12.7 0.152 29.50 1.575 34.036 Unit : mm 6 FLL21E090IY L,S-band High Power GaAs FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 7