ETC FLM5359-12F

FLM5359-12F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 41.5dBm (Typ.)
High Gain: G1dB = 9.5dB (Typ.)
High PAE: ηadd = 38% (Typ.)
Low IM3 = -46dBc@Po = 30.5dBm
Broad Band: 5.3 ~ 5.9GHz
Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM5359-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
57.6
W
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Test Conditions
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 3400mA
Vp
VDS = 5V, IDS = 300mA
-1.0
-2.0
-3.5
mS
V
IGS = -300µA
-5.0
-
-
V
40.5
41.5
-
dBm
8.5
9.5
-
dB
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Idsr
ηadd
Power-added Efficiency
Limit
Typ. Max.
5800 8700
2900
Symbol
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 5.3 ~ 5.9 GHz,
ZS=ZL= 50 ohm
Min.
-
-
3250 3800
Unit
mA
mA
-
38
-
%
-
-
±0.6
dB
-44
-46
-
dBc
Gain Flatness
∆G
3rd Order Intermodulation
Distortion
IM3
f = 5.9 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 30.5dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
2.3
2.6
°C/W
10V x Idsr x Rth
-
-
80
°C
Channel Temperature Rise
CASE STYLE: IK
Edition 1.3
August 2004
∆Tch
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
FLM5359-12F
C-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM3 vs. INPUT POWER
Output Power (S.C.L.) (dBm)
50
40
30
20
10
VDS=10V
f1 = 5.9 GHz
f2 = 5.91 GHz
2-tone test
37
35
33
Pout
31
29
-20
27
-30
25
-40
IM3
23
0
50
100
150
IM3 (dBc)
Total Power Dissipation (W)
60
-50
200
Case Temperature (°C)
17
19
21
23
25 27
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V
P1dB
VDS=10V
Pin=33dBm
41
31dBm
40
39
29dBm
38
42 f = 5.6 GHz
40
Pout
38
45
36
34
30
ηadd
32
37
15
27dBm
5.3
5.5
5.7
Frequency (GHz)
5.9
21
23
25
27
29
31
Input Power (dBm)
33
ηadd (%)
42
Output Power (dBm)
Output Power (dBm)
43
OUTPUT POWER vs. INPUT POWER
FLM5359-12F
C-Band Internally Matched FET
S11
S22
+j100
+j25
5.9
5.7
+j10
0.1
+j250
6.1
6.1
5.9
5.1GHz
5.7
0
10
5.5
5.1GHz
5.5
100
50Ω
6.1
180°
250
5.9
-j250
5.1GHz
5.3
2
5.3
5.9
5.5
6.1 5.7
5.3
-j10
S21
S12
+90°
0.2
SCALE FOR |S12|
+j50
5.3
4
6
8
SCALE FOR |S21|
5.5
5.7
5.1GHz
-j100
-j25
-j50
-90°
S11
S-PARAMETERS
VDS = 10V, IDS = 3400mA
S21
S12
MAG
ANG
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
S22
5100
.722
-100.8
2.867
43.0
.027
21.1
.434
-91.7
5200
.670
-118.0
3.100
25.4
.031
-4.1
.401
-113.1
5300
.608
-137.4
3.299
7.2
.038
-26.3
.372
-136.6
5400
.543
-159.6
3.429
-11.6
.044
-49.2
.352
-161.0
5500
.485
175.3
3.497
-30.0
.050
-71.0
.343
175.8
5600
.448
148.0
3.502
-48.4
.054
-91.6
.344
155.0
5700
.441
120.7
3.449
-66.1
.057
-110.3
.344
137.0
5800
.458
96.4
3.357
-83.2
.060
-128.1
.346
121.8
5900
.485
76.0
3.250
-99.5
.063
-144.4
.350
108.2
6000
.513
59.3
3.141
-114.9
.064
-159.7
.357
96.8
6100
.536
45.2
3.053
-129.7
.066
-174.1
.365
86.8
0°
FLM5359-12F
C-Band Internally Matched FET
2.0 Min.
(0.079)
Case Style "IK"
Metal-Ceramic Hermetic Package
0.1
(0.004)
2
3
0.6
(0.024)
2.0 Min.
(0.079)
4-R 1.3±0.15
(0.051)
17.4±0.3
(0.685)
8.0±0.2
(0.315)
1
1.4
(0.055)
14.9
(0.587)
20.4±0.3
(0.803)
2.4±0.15
(0.094)
5.5 Max.
(0.217)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
24±0.5
(0.945)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.