EUDYNA FMM5118X

FMM5118X
20-32GHz Doubler MMIC
FEATURES
• Integrated Monolithic Doubler
• High Harmonic Rejection
• Single Supply Voltage
• High Reliability
DESCRIPTION
The FMM5118X is a doubler, consisting of an X2 multiplier
followed by a buffer amplifier for applications with an output
frequency of 20 to 32 GHz. This doubler is uniquely suited for
point-to-point radios, local multi-point distribution systems
(LMDS) and satellite communications, as it offers a high
dynamic range over a large bandwidth.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
VDD1,2
Rating
8
Unit
V
Input Power
Pin
10
dBm
Storage Temperature
Tstg
-65 to +175
°C
DC Supply Voltage
RECOMMENDED OPERATING CONDITIONS
Item
DC Supply Voltage
Input Drive Power
Operating Backside Temperature
Symbol
Pin
Min.
3.0
0.0
Tbs
-45
VDD1,2
Recommend
Typ.
-
Unit
3.0
Max.
6.0
5.0
V
dBm
25
110
°C
Note 1: This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Min.
Limits
Typ. Max.
16
Unit
Input Frequency Range
Output Frequency Range
fin
10
fout
20
-
32
GHz
Output Power
Pout
14
18
20
dBm
Conversion Gain
Gc
11
14
17
dB
Conversion Gain Flatness
∆G
-
2.5
-
dB
-
15
-
dB
-
25
-
dB
VDD1,2=5V,
Pin=3dBm
GHz
Input Return Loss
Fundamental Rejection
RLin
RJ1st
3rd Harmonic Rejection
RJ3rd
-
30
-
dB
DC Current Consumption
IDC
-
100
150
mA
RF Current Consumption
IRF
-
140
200
mA
Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1)
Edition 1.2
May 2003
1
FMM5118X
20-32GHz Doubler MMIC
VDD-Output Power Dependency
OUTPUT POWER vs. FREQUENCY
30
25
VDD1,2=5V,
Pin=3dBm
Fundamental (fo)
2nd Harmonic (2 x fo)
19
18
15
17
Output Power (dBm)
Output Power (dBm)
3rd Harmonic (3 x fo)
20
10
5
0
-5
-10
-15
16
15
14
Pin=3dBm
13
12
-20
Pout@VDD1,2=6V
Pout@VDD1,2=5V
Pout@VDD1,2=4V
11
-25
9
10
11
12
13
14
15
16
17
9
10
Input Frequency (GHz)
13
14
15
16
17
RF CURRENT vs. FREQUENCY
Pin=
VDD1,2=5V,
Pin=3dBm
0dBm
1dBm
2dBm
3dBm
4dBm
5dBm
20
160
RF Current (IRF) (mA)
Output Power (2 x fo) (dBm)
12
Input Frequency (GHz)
OUTPUT POWER vs. FREQUENCY
VDD1,2=5V
11
15
150
140
130
10
120
5
9
10
11
12
13
14
15
16
17
9
Input Frequency (GHz)
10
11
12
13
14
15
Input Frequency (GHz)
2
16
17
FMM5118X
20-32GHz Doubler MMIC
SMALL SIGNAL RETURN LOSS vs. FREQUENCY
0
S22
VDD1,2=5V,
Pin=-10dBm
Input/Output Return Loss (dB)
–5
–10
S11
–15
–20
–25
5
10
15
20
25
30
35
40
Frequency (GHz)
Block Diagram
VGG=0V (GND)
fo IN
X2
VDD1=5V
VDD2=5V
3
2 x fo OUT
FMM5118X
20-32GHz Doubler MMIC
Bonding Diagram
VGG=GND
2 x fo OUT
fo IN
0.15µF
C=220pF
VDD=5V
4
FMM5118X
20-32GHz Doubler MMIC
Notes:
5
FMM5118X
20-32GHz Doubler MMIC
CHIP OUTLINE
Unit: µm
2030
Chip Size: 2.14mm x 2.03mm
Chip Thickness: 110µm (Typ.)
Pad Dimensions: 1. fo IN: 80 x 160µm
2. VGG: 100 x 100µm
3. 2x fo OUT: 80 x 160µm
4. VDD1: 100 x 100µm
5. VDD2: 80 x 80µm
1760
VGG
675
2x fo OUT
440
fo IN
180
170
0
VDD1
0 170 185
VDD2
730
880
2005 2140
For further information please contact:
CAUTION
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder,
or liquid through burning, crushing, or chemical processing
as these by-products are dangerous to the human body
if inhaled, ingested, or swallowed.
• Observe government laws and company regulations
when discarding this product. This product must be
discarded in accordance with methods specified
by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
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Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0502M200
6