FMM5117X 20-32GHz Downconverter MMIC FEATURES • • • • Integrated Monolithic Downconverter High Linearity Single Supply Voltage Operation High Reliability DESCRIPTION The FMM5117X is a double, single balanced diode mixer downconverter designed for applications in the 20 to 32GHz frequency range. The device consists of a low noise mixer, LO amplifier, and LO frequency doubler. This downconverter is uniquely suited for point-to-point radios, local multi-point distribution systems (LMDS) and satellite communications, as it offers a high dynamic range over a large bandwidth. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter DC Supply Voltage Symbol Rating VDD1,2 8 Unit V Input Power PinRF 20 dBm Input Power Storage Temperature PinLO Tstg 10 -65 to +175 dBm °C RECOMMENDED OPERATING CONDITIONS Item DC Supply Voltage Input LO Power Level Operating Backside Temperature Symbol Min. VDD1,2 PinLO Tbs 0.0 -45 Recommend Typ. 5.0 3.0 Max. Unit 5.0 110 V dBm °C 25 Note 1: This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Min. Limits Typ. Max. 32 GHz Unit RF Frequency Range fRF 20 LO Frequency Range fLO 9.5 - 16.5 GHz IF Frequency Range (Note 2) fIF 0.1 - 3 GHz Conversion Gain G -18 -10 - dB - 5 - dB - 2 - dB Conversion Gain Flatness (fixed fIF, swept fLO) (fIF=1.0GHz) ∆G Conversion Gain Flatness (fixed fLO, swept fIF) (fLO=13.5GHz) ∆G Return Loss (RF/LO) RLRF, RLLO VDD1,2=5V, VGG=0V, PLO=3dBm, PRF=0dBm - 12 - dB RLIF - 4 - dB P1dBRFIN - 15 - dBm 3rd Order Input Intercept Point DC Current Consumption IIP3 IDC - 23 100 150 dBm mA RF Current Consumption IRF - 140 200 mA Return Loss (IF) Input P1dB at RF Port Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1) Note 2: The IF frequency range is dependent on the selected LO and RF frequency. Edition 1.3 May 2003 FMM5117X 20-32GHz Downconverter MMIC CONVERSION GAIN (LSB) vs. FREQUENCY Conversion Gain (LSB) (dB) -4 VDD1,2=5V, PLO=3dBm, PRF=0dBm fIF=1GHz fIF=2GHz -2 fIF=3GHz -4 Conversion Gain (USB) (dB) -2 CONVERSION GAIN (USB) vs. FREQUENCY -6 -8 -10 -12 -14 -8 -10 -12 -14 -16 -18 -18 18 20 22 24 26 28 30 32 34 fIF=3GHz -6 -16 -20 fIF=1GHz fIF=2GHz VDD1,2=5V, PLO=3dBm, PRF=0dBm -20 36 18 20 22 2 x LO Frequency (GHz) 26 28 30 32 34 IM3 vs. FREQUENCY 2xLO OUTPUT POWER vs. FREQUENCY 30 0 VDD1,2=5V PLO=3dBm, PRF=0dBm, fIF=1GHz, IIP3 20 IM3 Suppression (dBc) / IIP3 (dBm) -5 2x LO Output Power (dBm)@RF Port 24 2 x LO Frequency (GHz) -10 -15 -20 -25 -30 10 0 VDD1,2=5V, fIF=1GHz -10 ∆f=10MHz -20 PLO=3dBm, PRF=0dBm, -30 -40 IM3 -35 -50 -40 9 10 11 12 13 14 15 16 17 -60 9 11 LO Frequency (GHz) 13 15 LO Frequency (GHz) RF RETURN LOSS vs. FREQUENCY IF RETURN LOSS vs. FREQUENCY RF Return Loss; fIF=1GHz fLO=13GHz -5 -10 IF Return Loss (dB) RF Return Loss (dB) -2 -15 -20 -4 -6 -8 -25 20 22 24 26 28 RF Frequency (GHz) 30 32 0.5 1 1.5 2 2.5 IF Frequency (GHz) 3 3.5 4 36 FMM5117X 20-32GHz Downconverter MMIC BONDING DIAGRAM VDD1,2=5V C=220pF LO RF VGG=GND IF FUNCTIONAL DIAGRAM IF OUT RF IN X2 LO IN FMM5117X 20-32GHz Downconverter MMIC CHIP OUTLINE VDD1 VDD2 Unit: µm 2260 2045 LO 1775 1690 RF Chip Size: 3.085mm x 2.26mm Chip Thickness: 110µm (Typ.) Pad Dimensions: 1. RF: 80 x 160µm 2. VDD1: 80 x 80µm 3. VDD2: 100 x 100µm 4. LO: 80 x 160µm 5. VGG: 100 x 100µm 6. IF: 80 x 120µm VGG 460 190 0 IF 0190 1195 2135 2300 2865 3085 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0502M200