Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 2500 V TC = 80 °C IC,nom. 500 A TC = 25 °C IC 800 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 1000 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 5,2 kW VGES +/- 20V V IF 500 A IFRM 1000 A 2 I t 100 kA2s VISOL 5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 3,0 3,5 V - 3,8 4,3 V VGE(th) 4,3 5,3 6,3 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 500A, V GE = 15V, Tvj = 25°C VCE sat IC = 500A, V GE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 40mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V ... +15V QG - 9 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 48 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 4 - nF VCE = 2500V, V GE = 0V, Tvj = 25°C ICES - - 10 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: Oliver Schilling date of publication: 01.09.2001 approved by: Thomas Schütze revision: 3 Kollektor-Emitter Reststrom collector-emitter cut-off current 1 [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Charakteristische Werte / Characteristic values min. typ. max. - 1,4 - µs - 1,5 - µs - 0,25 - µs - 0,25 - µs - 2,2 - µs - 2,2 - µs - 0,2 - µs - 0,2 - µs Eon - 700 - mWs Eoff - 500 - mWs ISC - 200 - A LsCE - 25 - nH RCC´+EE´ - 0,37 - mΩ min. typ. max. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) IC = 500A, V CE = 1200V turn on delay time (inductive load) VGE = ±15V, RG = 2,7Ω, CGE=68nF, Tvj = 25°C, td,on VGE = ±15V, RG = 2,7Ω, CGE=68nF, Tvj = 125°C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 500A, V CE = 1200V VGE = ±15V, RG = 2,7Ω, CGE=68nF, Tvj = 25°C, tr VGE = ±15V, RG = 2,7Ω, CGE=68nF, Tvj = 125°C, Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 500A, V CE = 1200V VGE = ±15V, RG = 5,6Ω, CGE=68nF, Tvj = 25°C, td,off VGE = ±15V, RG = 5,6Ω, CGE=68nF, Tvj = 125°C, Fallzeit (induktive Last) fall time (inductive load) IC = 500A, V CE = 1200V VGE = ±15V, RG = 5,6Ω, CGE=68nF, Tvj = 25°C, tf VGE = ±15V, RG = 5,6Ω, CGE=68nF, Tvj = 125°C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 500A, V CE = 1200V, V GE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 500A, V CE = 1200V, V GE = ±15V Kurzschlußverhalten SC Data RG = 2,7Ω, CGE=68nF, Tvj = 125°C , L S = 60nH RG = 5,6Ω, CGE=68nF, Tvj = 125°C , L S = 60nH tP ≤ 10µsec, V GE ≤ 15V TVj≤125°C, VCC=1200V, VCEmax=VCES -LsCE ·dI/dt Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip Diode / Diode Durchlaßspannung forward voltage IF = 500A, V GE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 500A, - diF/dt = 2000A/µs VF IF = 500A, V GE = 0V, Tvj = 125°C VR = 1200V, VGE = -10V, T vj = 25°C IRM VR = 1200V, VGE = -10V, T vj = 125°C Sperrverzögerungsladung recovered charge 2,3 2,7 V 2,3 2,7 V - 480 - A - 500 - A - 260 - µAs - 450 - µAs - 160 - mWs - 300 - mWs IF = 500A, - diF/dt = 2000A/µs VR = 1200V, VGE = -10V, T vj = 25°C Qr VR = 1200V, VGE = -10V, T vj = 125°C Abschaltenergie pro Puls reverse recovery energy - IF = 500A, - diF/dt = 2000A/µs VR = 1200V, VGE = -10V, T vj = 25°C VR = 1200V, VGE = -10V, T vj = 125°C 2 Erec [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K typ. max. - - 0,024 K/W - - 0,048 K/W RthCK - 0,016 - K/W Tvj - - 150 °C Tvj,op -40 - 125 °C Tstg -40 - 125 °C Diode/Diode, DC Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature min. RthJC Transistor / transistor, DC Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Material Modulbodenplatte material of module baseplate AlSiC Innere Isolation internal insulation AlN Kriechstrecke creepage distance 32 mm Luftstrecke clearance 19,1 mm CTI comperative tracking index >400 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M4 M2 terminals M8 Gewicht weight G 1000 5 Nm 2 Nm 8 - 10 Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (V CE) V GE = 15V 1000 900 Tj = 25°C 800 Tj = 125°C IC [A] 700 600 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 5,5 6,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (V CE) T vj = 125°C 1000 900 VGE = 20V 800 VGE = 15V VGE = 12V 700 VGE = 10V IC [A] VGE = 9V 600 VGE = 8V 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Übertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (V GE) VCE = 10V 1000 Tj = 25°C 900 Tj = 125°C 800 IC [A] 700 600 500 400 300 200 100 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (V F) 1000 900 Tj = 25°C Tj = 125°C 800 IF [A] 700 600 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VF [V] 5 [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Schaltverluste (typisch) Eon = f (I C) , Eoff = f (I C) , Erec = f (I C) Rgon =2,7Ω Ω , Rgoff=5,6Ω Ω , CGE=68nF , V GE=±15V, V CE = 1200V, T j = 125°C, L S = 60nH Switching losses (typical) 3000 2750 Eon 2500 Eoff Erec 2250 E [mJ] 2000 1750 1500 1250 1000 750 500 250 0 0 100 200 300 400 500 600 700 800 900 1000 IC [A] Schaltverluste (typisch) Switching losses (typical) E on = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 500A , V CE = 1200V , V GE=±15V, CGE = 68nF, T j = 125°C, L S = 60nH 2500 2250 Eon Eoff 2000 Erec 1750 E [mJ] 1500 1250 1000 750 500 250 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 RG [Ω Ω] 6 [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) Rg = 5,6 Ohm, C GE = 68nF, T vj= 125°C 1000 800 IC [A] 600 400 IC,Modul 200 IC,Chip 0 0 500 1000 1500 2000 2500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) T vj= 125°C 1000 IR [A] 800 600 400 200 0 0 500 1000 1500 2000 2500 VR [V] 7 [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Transienter Wärmewiderstand Transient thermal impedance Z thJC = f (t) ZthJC [K / W] 0,1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i 1 2 3 4 ri [K/kW] : IGBT 2,7 6,6 11,1 3,6 τi [sec] : IGBT 0,011 0,052 0,103 0,95 ri [K/kW] : Diode 6,3 15 13,5 13,2 τi [sec] : Diode 0,025 0,056 0,1 1,31 8 [email protected] Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Äußere Abmessungen und Schaltbild / extenal dimensions and circuit diagram 55,2 11,85 130 114 29,5 1 3 2 for M8 E1 external connections (to be done) C2 E1 7 for M4 C1 C1 28 7 E2 G2 3,5 deep 4 10 E2 G1 E1 25,5 29,5 45 3,5 deep 5 C2 C2 E1 C2 G1 G2 C1 C1 E2 E2 6 for M6 29,5 43 47 IH6 9 [email protected]