Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Tvj =25°C VRRM 800 V Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip TC =80°C IFRMSM 29 A Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output TC =80°C IRMSmax 36 A IFSM 262 A Stoßstrom Grenzwert tP = 10 ms, T vj = surge forward current tP = 10 ms, T vj = 150°C 25°C Grenzlastintegral tP = 10 ms, T vj = I2t - value tP = 10 ms, T vj = 150°C 2 I t 25°C 215 A 344 A2 s 231 A2 s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj =25°C VCES 600 V TC = 65°C IC,nom. 20 A TC = 25 °C IC 25 A ICRM 40 A Ptot 78 W VGES +/- 20V V IF 20 A IFRM 40 A I t 2 62 A s Tvj =25°C VCES 600 V TC = 65 °C IC,nom. 20 A TC = 25 °C IC 25 A ICRM 40 A Ptot 78 W VGES +/- 20V V IF 20 A IFRM 40 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25°C T c=65°C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral 2 I t - value VR = 0V, t p = 10ms, T vj = 125°C 2 Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25°C T c=65°C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Thomas Passe date of publication: 2002-02-14 approved by: Ingo Graf revision: 4 1(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 0,95 - V Diode Gleichrichter/ Diode Rectifier Durchlaßspannung forward voltage Tvj = 150°C, Schleusenspannung threshold voltage Tvj = 150°C V(TO) - 0,71 - V Ersatzwiderstand slope resistance Tvj = 150°C rT - 12 - mW Sperrstrom reverse current Tvj = 150°C, IR - 5 - mA RAA'+CC' - 11 - mW min. typ. max. I F = 20 A V R = 800 V Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, T vj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, T vj = 125°C, I C = 20 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, I C = 0,5mA Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, V GE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse VGE = 0V, Tvj =125°C, V CE = 600V VCE = 0V, V GE =20V, Tvj =25°C 47 Ohm VGE = ±15V, Tvj = 125°C, R G = 47 Ohm 47 Ohm VGE = ±15V, Tvj = 125°C, R G = 47 Ohm 47 Ohm VGE = ±15V, Tvj = 125°C, R G = 47 Ohm 47 Ohm VGE = ±15V, Tvj = 125°C, R G = 47 Ohm IC = INenn, S 4,5 5,5 6,5 V Cies - 1,1 - nF ICES - 5,0 - mA IGES - - 400 nA td,on - 22 - ns - 31 - ns tr - 23 - ns - 37 - ns td,off - 143 - ns - 154 - ns tf - 22 - ns - 38 - ns 47 Ohm Eon - 0,7 - mWs Eoff - 0,6 - mWs ISC - 90 - A = 80 nH V CC = 300 V VGE = ±15V, Tvj = 125°C, R G = L Kurzschlußverhalten SC Data VGE(TO) V CC = 300 V VGE = ±15V, Tvj = 125°C, R G = L Abschaltverlustenergie pro Puls turn-off energy loss per pulse V V CC = 300 V VGE = ±15V, Tvj = 25°C, R G = IC = INenn, V - V CC = 300 V VGE = ±15V, Tvj = 25°C, R G = IC = INenn, 2,55 2,2 V CC = 300 V VGE = ±15V, Tvj = 25°C, R G = IC = INenn, 1,95 V CC = 300 V VGE = ±15V, Tvj = 25°C, R G = IC = INenn, - I C = 20 A Tvj = 25°C, IC = INenn, VCE sat S 47 Ohm = 80 nH tP £ 10µs, V GE £ 15V, RG = 47 Ohm Tvj£125°C, VCC = 360 V 2(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip min. typ. max. LsCE - - 40 nH RCC'+EE' - 13 - mW min. typ. max. - 1,7 2,15 V - 1,7 - V Diode Wechselrichter/ Diode Inverter Durchlaßspannung forward voltage VGE = 0V, Tvj = 25°C, I F = 20 A VGE = 0V, Tvj = 125°C, I F = 20 A Rückstromspitze peak reverse recovery current IF=INenn, Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy - diF/dt = 1000 A/us VGE = -10V, Tvj = 25°C, V R = 300 V VGE = -10V, Tvj = 125°C, V R = 300 V IF=INenn, 300 V VGE = -10V, Tvj = 125°C, V R = 300 V IF=INenn, - 20 - A - 23 - A Qr - 1 - µAs - 1,7 - µAs - diF/dt = 1000 A/us VGE = -10V, Tvj = 25°C, V R = 300 V VGE = -10V, Tvj = 125°C, V R = 300 V I C = 20,0 A collector-emitter saturation voltage VGE = 15V, T vj = 125°C, I C = 20,0 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, I C = 0,5mA Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, V GE = 0 V Gate-Emitter Reststrom gate-emitter leakage current IRM - diF/dt = 1000 A/us VGE = -10V, Tvj = 25°C, V R = Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, T vj = 25°C, Kollektor-Emitter Sättigungsspannung Kollektor-Emitter Reststrom collector-emitter cut-off current VF Tvj = 25°C, Erec VCE sat Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25°C, Durchlaßspannung forward voltage Tvj = 125°C, 20A IF= 20A NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance TC = 25°C Abweichung von R100 deviation of R100 TC = 100°C, R 100 = 493 W Verlustleistung power dissipation TC = 25°C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] - mWs - mWs min. typ. max. - 1,95 2,55 V 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,1 - nF - 5,0 - mA - - 400 nA min. typ. max. - 2,45 2,9 V - 2,55 - V min. typ. max. R25 - 5 - kW DR/R -5 5 % 20 mW IGES IF= 0,2 0,35 - VGE = 0V, Tvj = 125°C, V CE = 600V VCE = 0V, V GE = 20V, Tvj = 25°C - VF P25 3(12) B25/50 3375 K Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to heatsink Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink min. typ. max. - 2,1 - K/W Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 1,8 - K/W Diode Wechsr./ Diode Inverter - 3,7 - K/W Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH Trans. Bremse/ Trans. Brake - 1,8 - K/W Diode Bremse/ Diode Brake - 4,3 - K/W - - 2 K/W Trans. Wechsr./ Trans. Inverter - - 1,6 K/W Diode Wechsr./ Diode Inverter - - 2,7 K/W Trans. Bremse/ Trans. Brake - - 1,6 K/W Diode Bremse/ Diode Brake - - 3,1 K/W RthJC Gleichr. Diode/ Rectif. Diode Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthCH - 0,3 - K/W Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 0,4 - K/W Diode Wechsr./ Diode Inverter - 1,3 - K/W Trans. Bremse/ Trans. Brake - 0,4 - K/W Diode Bremse/ Diode Brake - 1,5 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 Anpreßkraft f. mech. Befestigung mounting force F Gewicht weight Kontakt - Kühlkörper terminal to heatsink Terminal - Terminal terminal to terminal G 40...80 N 36 g 13,5 mm Luftstrecke clearance 12 mm Kriechstrecke creeping distance 7,5 mm Luftstrecke clearance 7,5 mm Kriechstrecke creeping distance 4(12) Technische Information / Technical Information FP20R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 40 Tj = 25°C 35 Tj = 125°C 30 IC [A] 25 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 4,00 4,50 5,00 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) T vj = 125°C 40 VGE = 8V 35 VGE = 9V VGE = 10V 30 Vge=12V Vge=15V IC [A] 25 Vge=20V 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VCE [V] 5(12) 3,50 Technische Information / Technical Information FP20R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Übertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) IC = f (VGE) VCE = 20 V 40 Tj = 25°C Tj = 125°C 35 30 IC [A] 25 20 15 10 5 0 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 VGE [V] Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) IF = f (VF) 40 Tj = 25°C 35 Tj = 125°C 30 IF [A] 25 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 VF [V] 6(12) 2,50 3,00 Technische Information / Technical Information FP20R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) T j = 125°C, V GE = ±15 V, VCC = 300 V R Gon = RGoff = 47 Ohm 3 Eon Eoff 2,5 Erec E [mWs] 2 1,5 1 0,5 0 0 5 10 15 20 25 30 35 40 45 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) T j = 125°C, V GE = +-15 V , I c = Inenn , V CC = 300 V 110 120 3 Eon Eoff 2,5 Erec E [mWs] 2 1,5 1 0,5 0 40 50 60 70 80 90 RG [W] 7(12) 100 Technische Information / Technical Information FP20R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Transienter Wärmewiderstand Wechselr. Transient thermal impedance Inverter ZthJH = f (t) 10,000 Zth-IGBT ZthJH [K/W] Zth-FWD 1,000 i 1 2 3 IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3 ti [s]: 3e-6 FWD: r i [K/W]: 245,4e-3 ti [s]: 4 624,52e-3 79,74e-3 1,22 10,28e-3 956,8e-3 226,61e-3 1,27 80,4e-3 10,35e-3 227,3e-3 3e-6 0,100 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE) Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, V GE = ±15V, R G = 47 Ohm 45 40 35 IC,Modul IC,Chip IC [A] 30 25 20 15 10 5 0 0 100 200 300 400 VCE [V] 8(12) 500 600 700 Technische Information / Technical Information FP20R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE) Output characteristic brake-chopper-IGBT (typical) VGE = 15 V 40 Tj = 25°C 35 Tj = 125°C 30 IC [A] 25 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 40 Tj = 25°C 35 Tj = 125°C 30 IF [A] 25 20 15 10 5 0 0 0,5 1 1,5 2 2,5 VF [V] 9(12) 3 3,5 4 Technische Information / Technical Information FP20R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Durchlaßkennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) IF = f (VF) 40 Tj = 25°C 35 Tj = 150°C 30 IF [A] 25 20 15 10 5 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[W] 10000 1000 100 0 20 40 60 80 TC [°C] 10(12) 100 120 140 Technische Information / Technical Information FP20R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Schaltplan/ Circuit diagram J Gehäuseabmessungen/ Package outlines Bohrplan / drilling layout 11(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Gehäuseabmessungen Forts. / Package outlines contd. 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