EUPEC FB20R06KL4

Technische Information / Technical Information
FB20R06KL4
IGBT-Module
IGBT-Modules
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Tvj =25°C
VRRM
800
V
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip
TC =80°C
IFRMSM
58
A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
TC =80°C
IRMSmax
96
A
IFSM
448
A
Stoßstrom Grenzwert
tP = 10 ms, T vj =
surge forward current
tP = 10 ms, T vj = 150°C
25°C
Grenzlastintegral
tP = 10 ms, T vj =
I2t - value
tP = 10 ms, T vj = 150°C
2
I t
25°C
358
A
1000
A2 s
642
A2 s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Tvj =25°C
VCES
600
V
TC = 65°C
IC,nom.
20
A
TC = 25 °C
IC
25
A
ICRM
40
A
Ptot
80
W
VGES
+/- 20V
V
IF
20
A
IFRM
40
A
2
I t
62
A2 s
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
T C =65°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral
2
I t - value
VR = 0V, t p = 10ms, T vj = 125°C
prepared by: Thomas Passe
date of publication: 2002-02-27
approved by: Ingo Graf
revision: 5
1(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB20R06KL4
Vorläufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
VF
-
0,85
-
V
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
Tvj = 150°C
V(TO)
-
0,63
-
V
Ersatzwiderstand
slope resistance
Tvj = 150°C
rT
-
10
-
mW
Sperrstrom
reverse current
Tvj = 150°C,
IR
-
5
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
RAA'+CC'
-
4
-
mW
min.
typ.
max.
-
1,95
2,55
V
-
2,2
-
V
VGE(TO)
4,5
5,5
6,5
V
Cies
-
1,1
-
nF
ICES
-
5,0
-
mA
IGES
-
-
400
nA
I F = 20 A
V R = 800 V
Transistor Wechselrichter/ Transistor Inverter
VGE = 15V, T vj = 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, T vj = 125°C,
I C = 20 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE,
I C = 0,5mA
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, V GE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I C = 20 A
Tvj = 25°C,
VGE = 0V, Tvj = 125°C, VCE = 600V
VCE = 0V, V GE =20V, Tvj =25°C
IC = INenn,
V CC = 300 V
VGE = ±15V, Tvj = 25°C, R G =
47 Ohm
VGE = ±15V, Tvj = 125°C, R G =
47 Ohm
IC = INenn,
47 Ohm
VGE = ±15V, Tvj = 125°C, R G =
47 Ohm
47 Ohm
VGE = ±15V, Tvj = 125°C, R G =
47 Ohm
47 Ohm
VGE = ±15V, Tvj = 125°C, R G =
47 Ohm
IC = INenn,
S
ns
ns
tr
-
23
-
ns
-
37
-
ns
td,off
-
143
-
ns
-
154
-
ns
tf
-
22
-
ns
-
38
-
ns
47 Ohm
Eon
-
0,73
-
mWs
Eoff
-
0,56
-
mWs
ISC
-
80
-
A
= 80 nH
V CC = 300 V
VGE = ±15V, Tvj = 125°C, R G =
L
Kurzschlußverhalten
SC Data
-
V CC = 300 V
VGE = ±15V, Tvj = 125°C, R G =
L
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
22
31
V CC = 300 V
VGE = ±15V, Tvj = 25°C, R G =
IC = INenn,
-
V CC = 300 V
VGE = ±15V, Tvj = 25°C, R G =
IC = INenn,
td,on
V CC = 300 V
VGE = ±15V, Tvj = 25°C, R G =
IC = INenn,
VCE sat
S
47 Ohm
= 80 nH
tP £ 10µs, V GE £ 15V,
RG =
47 Ohm
Tvj£125°C,
VCC =
360 V
2(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB20R06KL4
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
TC = 25°C
VGE = 0V, Tvj = 25°C,
I F = 20 A
VGE = 0V, Tvj = 125°C,
I F = 20 A
IF=INenn,
VGE = -10V, Tvj = 25°C, V R =
300 V
300 V
max.
LsCE
-
-
40
nH
RCC'+EE'
-
13
-
mW
min.
typ.
max.
-
1,7
2,15
V
-
1,7
-
V
VF
IRM
-
20
-
A
-
23
-
A
- diF/dt = 1000 A/us
VGE = -10V, Tvj = 25°C, V R =
300 V
VGE = -10V, Tvj = 125°C, V R =
300 V
IF=INenn,
typ.
- diF/dt = 1000 A/us
VGE = -10V, Tvj = 125°C, V R =
IF=INenn,
min.
Qr
-
1
-
µAs
-
1,7
-
µAs
- diF/dt = 1000 A/us
VGE = -10V, Tvj = 25°C, V R =
300 V
VGE = -10V, Tvj = 125°C, V R =
300 V
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
TC = 25°C
Abweichung von R100
deviation of R100
TC = 100°C, R 100 = 493 W
Verlustleistung
power dissipation
TC = 25°C
B-Wert
B-value
R2 = R1 exp [B(1/T2 - 1/T1)]
Erec
-
0,2
-
mWs
-
0,35
-
mWs
min.
typ.
max.
R25
-
5
-
kW
DR/R
-5
5
%
20
mW
P25
3(11)
B25/50
3375
K
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB20R06KL4
Vorläufig
Preliminary
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to heatsink
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
min.
typ.
max.
-
1,1
-
K/W
Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K
-
1,8
-
K/W
Diode Wechsr./ Diode Inverter
-
3,7
-
K/W
-
-
1
K/W
Trans. Wechsr./ Trans. Inverter
-
-
1,6
K/W
Diode Wechsr./ Diode Inverter
-
-
2,7
K/W
Gleichr. Diode/ Rectif. Diode
lPaste=1W/m*K
RthJH
RthJC
Gleichr. Diode/ Rectif. Diode
lPaste=1W/m*K
RthCH
-
0,2
-
K/W
Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K
-
0,4
-
K/W
Diode Wechsr./ Diode Inverter
-
1,3
-
K/W
Gleichr. Diode/ Rectif. Diode
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj
-
-
150
°C
Betriebstemperatur
operation temperature
Top
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al2O3
CTI
comperative tracking index
225
Anpreßkraft f. mech. Befestigung pro Feder
mounting force per clamp
F
Gewicht
weight
Kontakt - Kühlkörper
terminal to heatsink
Terminal - Terminal
terminal to terminal
G
40...80
N
36
g
13,5
mm
Luftstrecke
clearance
12
mm
Kriechstrecke
creeping distance
7,5
mm
Luftstrecke
clearance
7,5
mm
Kriechstrecke
creeping distance
4(11)
Technische Information / Technical Information
FB20R06KL4
IGBT-Module
IGBT-Modules
Vorläufig
Preliminary
Ausgangskennlinienfeld Wechselr. (typisch)
IC = f (VCE)
Output characteristic Inverter (typical)
VGE = 15 V
40
Tj = 25°C
35
Tj = 125°C
30
IC [A]
25
20
15
10
5
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
4,00
4,50
5,00
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch)
IC = f (VCE)
Output characteristic Inverter (typical)
T vj = 125°C
40
VGE = 8V
35
VGE = 9V
30
IC [A]
VGE = 10V
25
Vge=12V
20
Vge=15V
Vge=20V
15
10
5
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
VCE [V]
5(11)
3,50
Technische Information / Technical Information
FB20R06KL4
IGBT-Module
IGBT-Modules
Vorläufig
Preliminary
Übertragungscharakteristik Wechselr. (typisch)
Transfer characteristic Inverter (typical)
IC = f (VGE)
VCE = 20 V
40
Tj = 25°C
35
Tj = 125°C
30
IC [A]
25
20
15
10
5
0
5,00
6,00
7,00
8,00
9,00
10,00
11,00
12,00
VGE [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch)
Forward characteristic of FWD Inverter (typical)
IF = f (VF)
40
Tj = 25°C
35
Tj = 125°C
30
IF [A]
25
20
15
10
5
0
0,00
0,50
1,00
1,50
2,00
VF [V]
6(11)
2,50
3,00
Technische Information / Technical Information
FB20R06KL4
IGBT-Module
IGBT-Modules
Vorläufig
Preliminary
Schaltverluste Wechselr. (typisch)
Eon = f (IC), Eoff = f (IC), Erec = f (IC)
Switching losses Inverter (typical)
T j = 125°C,
V GE = ±15 V,
VCC =
300 V
47 Ohm
R Gon = RGoff =
3
Eon
Eoff
2,5
Erec
E [mWs]
2
1,5
1
0,5
0
0
5
10
15
20
25
30
35
40
45
IC [A]
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Eon = f (RG), Eoff = f (RG), Erec = f (RG)
T j = 125°C, V GE = +-15 V ,
I c = Inenn ,
V CC =
300 V
3
Eon
2,5
Eoff
Erec
E [mWs]
2
1,5
1
0,5
0
40
50
60
70
80
90
RG [W]
7(11)
100
110
120
Technische Information / Technical Information
FB20R06KL4
IGBT-Module
IGBT-Modules
Vorläufig
Preliminary
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
ZthJH = f (t)
10,000
Zth-IGBT
ZthJH [K/W]
Zth-FWD
1,000
i
1
2
3
IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3
ti [s]:
3e-6
FWD: r i [K/W]: 245,4e-3
ti [s]:
4
624,52e-3
79,74e-3
1,22
10,28e-3
956,8e-3
226,61e-3
1,27
80,4e-3
10,35e-3
227,3e-3
3e-6
0,100
0,001
0,01
0,1
1
10
t [s]
Sicherer Arbeitsbereich Wechselr. (RBSOA)
IC = f (VCE)
Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, V GE = ±15V, R G =
47 Ohm
45
40
35
IC,Modul
IC,Chip
IC [A]
30
25
20
15
10
5
0
0
100
200
300
400
VCE [V]
8(11)
500
600
700
Technische Information / Technical Information
FB20R06KL4
IGBT-Module
IGBT-Modules
Vorläufig
Preliminary
Durchlaßkennlinie der Gleichrichterdiode (typisch)
Forward characteristic of Rectifier Diode (typical)
IF = f (VF)
40
Tj = 25°C
35
Tj = 150°C
30
IF [A]
25
20
15
10
5
0
0,00
0,20
0,40
0,60
0,80
1,00
1,20
VF [V]
NTC- Temperaturkennlinie (typisch)
R = f (T)
NTC- temperature characteristic (typical)
100000
Rtyp
R[W]
10000
1000
100
0
20
40
60
80
TC [°C]
9(11)
100
120
140
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB20R06KL4
Vorläufig
Preliminary
Schaltplan/ Circuit diagram
J
Gehäuseabmessungen/ Package outlines
Bohrplan /
drilling layout
10(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB20R06KL4
Gehäuseabmessungen Forts. / Package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
11(11)
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