DATE DRAWN FEB. -20-‘ 07 CHECKED FEB. -20-‘ 07 CHECKED FEB.-20-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ir d par t y n or u s e d f or t he m an uf ac tur ing p urp os e s w ith ou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. S P E C I F I C AT I O N Device Name ： SILICON DIODE Type Name ： ESAD92M-03RR Spec. No. ： MS5D3003 Fuji Electric Device Technology Co.,Ltd. MS5D3003 1/12 H04-004-07b Date FEB.-20 -2007 Classification Ind. Content Applied date Enactment ― ―――――― Issued date Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Revised Records Drawn Checked MS5D3003 Approved 2/12 H04-004-06b 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE ESAD92M-03RR 2. OUT VIEW , MARKING , MOLDING RESIN , CHARACTERISTICS (1) Out view is shown MS5D3003 9/12 (2) Marking is shown MS5D3003 9/12 It is marked to type name or abbreviated type name, polarity and Lot No. (3) Molding resin Epoxy resin UL:V-0 MS5D3003 Bar Code Label of EIAJ C-3 Specification. (1) Type Name (2) Production Code (3) Quantity (4) Lot №(Date code) (5) Company Code 10/12～12/12 Indispensable description items are shown as below. 3. RATINGS 3.1 MAXIMUM RATINGS (at Ta=25℃ unless otherwise specified.) ITEM SYMBOL RATINGS UNITS 300 V 1500 V 50Hz Square wave duty =1/2 Tc = 96℃ 20* A Sine wave, 10ms 1shot 80 A Tj 150 ℃ Tstg -40～+150 ℃ Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current Io Non-repetitive forward surge current** IFSM Operating junction temperature Storage temperature * CONDITIONS Terminals-to-Case,AC.1min Out put current of center tap full wave connection. ** Rating per element 3.2 ELECTRICAL (at Ta=25℃ unless otherwise specified.) ITEM SYMBOL CONDITIONS MAXIMUM UNITS Forward voltage *** VF IF = 10A 1.2 V Reverse current *** IR VR = VRRM 200 μA Reverse recovery time*** trr IF=0.1A,IR=0.2A,Irec=0.05A 0.04 μs Junction to case 2.0 Thermal resistance Rth(j-c) ℃/W *** Rating per element 3.3 MECHANICAL CHARACTERISTICS Mounting torque Recommended torque 0.4～0.6 N･m 6 g Approximate mass Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. (4) Characteristics is shown MS5D3003 3/12 H04-004-03a 4. TEST AND INSPECTION 4.1 STANDARD TEST CONDITION Standard test condition is Ta=25℃、65%R.H. If judgment is no doubt, the test condition is possible to test in normal condition Ta=5～35℃、48～85%R.H. 4.2 STRUCTURE INSPECTION It inspect with eye and measure, Item 2 shall be satisfied. 4.3 FORWARD AND REVERSE CHARACTERISTICS It inspect on the standard condition, Item 3.2 shall be satisfied. 4.4 TEST Reference Test No. Items Testing methods and Conditions Terminal Pull force : 25N Strength Force maintaining duration :10±1s (Tensile) 2 Terminal Load force : 10N Strength Number of times : 2times(90deg./time) (Bending) 3 Mounting Screwing torque value:(M3) : 50±10N・cm Strength 4 Vibration EIAJ Sampling number Acceptance number EIAJ ED4701/401 method 1 5 EIAJ ED4701/401 method 3 5 EIAJ ED4701/402 method 2 5 EIAJ ED4701/403 test code D 5 EIAJ ED4701/404 test code D 5 Frequency : 100Hz to 2kHz Acceleration : 100m/s 2 Sweeping time : 4min./1 cycle Mechanical test Standard ED4701 1 4times for each X, Y&Z directions. 5 Shock Peak amplitude : 15km/s 2 Duration time : 0.5ms 3times for each X, Y&Z directions. 6 Solder ability 1 (0 : 1) EIAJ ED4701/303 test code A Solder : Sn-37Pb Solder temp. : 235±5℃ 5 Immersion time : 5±0.5s Apply to flux Solder ability 2 Solder : Sn-3Ag-0.5Cu Solder temp. : 245±5℃ 5 Immersion time : 5±0.5s Apply to flux 7 Resistance to Solder temp. : 260±5°C Soldering Immersion time : 10±1s Heat Number of times : 1times Fuji Electric Device Technology Co.,Ltd. EIAJ ED4701/302 test code A DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Test MS5D3003 5 4/12 H04-004-03a Test Test No. Items 1 2 3 4 Reference Testing methods and Conditions Standard Sampling Acceptance number number EIAJ ED4701 High Temp. Temperature :Ｔstg max Storage Test duration : 1000h Low Temp. Temperature :Ｔstg min Storage Test duration : 1000h Temperature Temperature : 85±2°C Humidity Relative humidity : 85±5% Storage Test duration : 1000h Temperature Temperature : 85±2°C Humidity Relative humidity : 85±5% Bias Bias Voltage : VRRM× 0.8 EIAJ ED4701/201 22 EIAJ ED4701/202 22 EIAJ ED4701/103 test code C 22 EIAJ ED4701/103 test code C 22 EIAJ ED4701/103 test code F 22 EIAJ ED4701/105 22 EIAJ ED4701/307 test code A 22 Test duration : 1000h Unsaturated Temperature : 130±2°C Pressurized Relative humidity : 85±5% Vapor Vapor pressure : 230kPa Test duration : 48h Endurance test 6 Temperature High temp. side : Tstg max Cycle Room temp. : 5～35℃ Low temp. side : Tstg min (0 : 1) Duration time : HT 30min,RT 5min LT 30min Number of cycles : 100 cycles 7 Thermal Fluid : pure water(running water) Shock High temp. side : 100+0/-5°C Low temp. side : 0+5/-0°C Duration time : HT 5min,LT 5min Number of cycles : 100 cycles 8 9 10 Steady state Ta=25±5°C Operating Rated load life Test duration : 1000h Intermittent Tj=Tjmax ～50℃ Operating 3min ON, 3min OFF life Test duration : 10000cycles High Temp. Temperature : Ta=100 °C Reverse Bias Voltage : VR=VRRM duty=1/2 Bias Test duration : 1000h Failure Criteria IR ≦USL x 5 22 EIAJ ED4701/106 22 EIAJ ED4701/101 22 USL : Upper specification Limit VF≦USL x 1.1 Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. 5 MS5D3003 5/12 H04-004-03a 5.Cautions ・Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. ・The products described in this specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ・Computers ・OA equipment ・Communications equipment (Terminal devices) ・Measurement equipment ・Machine tools ・AV equipment ・Electrical home appliances ・Personal equipment ・Industrial robots etc. ・The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate ・Transportation equipment (automobiles, trains, ships, etc.) ・Backbone network equipment ・Traffic-signal control equipment ・Gas alarms, leakage gas auto breakers ・Submarine repeater equipment ・Burglar alarms, fire alarms, emergency equipment ・Medical equipment ・Nuclear control equipment etc. ・Do not use the products in this Specification for equipment requiring strict reliability such as (but not limited to): ・Aerospace equipment ・Aeronautical equipment 6.Warnings ・The Diodes should be used in products within their absolute maximum rating (voltage, current, temperature, etc. ). The diodes may be destroyed if used beyond the rating. ・The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc…). ・Use the Diodes within their reliability and lifetime under certain environments or conditions. The Diodes may fail before the target lifetime of your products if used under certain reliability conditions. ・You must design the Diodes to be operated within the specified maximum ratings (voltage, current, temperature, etc. ) to prevent possible failure or destruction of devices. ・Consider the possible temperature rise not only for the junction and case, but also for the outer leads. ・Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to avoid electric shock and burns. ・The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame. Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke or flame in case the Diodes become even hotter during operation. Design the arrangement to prevent the spread of fire. ・The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas. (hydrogen sulfide, sulfurous acid gas.) ・The Diodes should not used in an irradiated field since they are not radiation proof. Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. safety measures such as a backup system to prevent the equipment from malfunctioning. MS5D3003 6/12 H04-004-03a Installation ・Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Table 1: Solder temperature and duration Solder Method Duration temperature Flow 260±5℃ 10±1sec Soldering iron 350±10℃ 3.5±0.5sec ・The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. ・When flow-soldering, be careful to avoid immersing the package in the solder bath. ・Refer to the following torque reference When mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will Table 2:Recommended tightening torque Package style Screw Recommended tightening torque TO-3PF M3 0.4～0.6N・m ・The heat sink should have a flatness within ±30μm and roughness within 10μm. Also, keep the tightening torque within the limits of this specification. ・Improper handling may cause isolation breakdown leading to a critical accident. ・We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage ・The Diodes must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45 to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. ・The Diodes should not be subjected to rapid changes in temperature to avoid condensation on the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is steady. ・The Diodes should not be stored on top of each other, since this may cause excessive external force on the case. ・The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to go fail during later processing. ・The Diodes should be stored in antistatic containers or shipping bags. Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. increase the thermal resistance, both of which conditions may destroy the device. MS5D3003 7/12 H04-004-03a 7.Appendix ・This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. ・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘ Cl eanAi r ActofUS’ law. ・If you have any questions about any part of this Specification, please contact Fuji Electric Device Technology or its sales agent before using the product ・Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. ・The application examples described in this specification are merely typical uses of Fuji Electric DeviceTechnology products. license for such rights. Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. This specification does not confer any industrial property rights or other rights, nor constitute a MS5D3003 8/12 H04-004-03a Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Sn-Cu dipping(Pb＜1000ppm) MS5D3003 9/12 H04-004-03a Reverse Characteristic Forward Characteristic (typ.) (typ.) 2 10 Tj=125°C Tj=150°C Tj=150°C Tj=25°C 1 10 Tj=125°C Reverse Current IF Forward Current (A) Tj=100°C 0 10 Tj=75°C 10 -1 10 -2 10 -3 ＩR 1 Tj=25°C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 50 100 150 ＶR 200 250 300 Reverse Voltage 350 400 （Ｖ） VF Forward Voltage (V) Reverse Power Dissipation (max.) Forward Power Dissipation (max.) 2.4 14 2.2 Square wave =120° 360° 360° DC 12 Sine wave =180° 2.0 VR I0 Square wave =180° 1.8 λ (W) Reverse Power Dissipation DC Square wave =60° 8 6 α 1.6 1.4 1.2 =180° 1.0 0.8 4 PR 0.6 0.4 2 Per 1element 0 0 2 4 Io 6 8 10 12 0.2 0.0 0 Average Forward Current (A) Fuji Electric Device Technology Co.,Ltd. 100 VR DWG.NO. Forward Power Dissipation (W) 10 WF T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. （ｍＡ） 10 200 Reverse Voltage MS5D3003 300 (V) 10/12 H04-004-03a Tc Cj Case Temperature (°C) 80 Sine wave =180° 70 Square wave =180° Square wave =120° 60 Square wave =60° 0 1 2 Junction Capacitance (pF) 90 5 10 3 15 4 5 6 7 8 Fuji Electric Device Technology Co.,Ltd. DWG.NO. ‚h FSM PeakHal f-WaveCur r ent ( A) T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. 150 Current Derating (Io-Tc) (max.) Junction Capacitance Characteristic (typ.) 140 130 120 DC 110 100 10 50 40 30 20 10 0 Io Average Output Current (A) ƒÉ :Conduct i onangl eoff or war dcur r entf oreachr ect i f i erel ement Io:Output current of center-tap full wave connection 20 50 VR Reverse Voltage (V) 100 MS5D3003 150 200 250 300 100 Surge Capability (max.) 80 60 40 20 Number of Cycles at 50Hz 9 10 11/12 H04-004-03a 10-1 10 -3 10 -2 10-1 t Time Fuji Electric Device Technology Co.,Ltd. DWG.NO. Transient Thermal Impedance T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. (°C/W) Transient Thermal Impedance (max.) 10 2 10 1 Rth j-c:2.0°C/W 10 0 (sec) 10 0 101 102 MS5D3003 12/12 H04-004-03a