FUJI YA982C6R

Spec. No.
DAT E
DRAWN Oct.-19-‘07
CHECKED Oct.-19-‘07
CHECKED Oct.-19-‘07
NAME
APPROVED
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y n or u s e d
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
S P E C I F I C AT I O N
Device Name :
SILICON DIODE
Type Name :
YA982C6R
:
MS5D3304
Fuji Electric Device Technology Co.,Ltd.
MS5D3304
1/12
H04-004-07b
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Revised
Records
Date
Classification
Ind.
Content
Applied
date
Oct.-19
-2007
Enactment
―
――――――
Issued
date
Drawn
Checked
MS5D3304
Approved
2/12
H04-004-06b
1. SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
YA982C6R
2. OUT VIEW, MOLDING RESIN, CHARACTERISTICS
Ordering code
Package type
Out view
Molding resin
YA982C6R
TO-220
Page 9/12
UL:V-0
Characteristics
Page
10/12∼12/12
Bar code label is EIAJ C-3 specification. Indispensable description items are shown as below.
(1) Type name
(2) Production code
(3) Quantity
(4) Lot №(Date code)
(5) Company code
3.1 MAXIMUM RATINGS (at Ta=25℃ unless otherwise specified.)
Item
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Symbol
Conditions
Ratings
Units
600
V
16 *
A
40
A
150
℃
VRRM
50Hz Square wave duty =1/2
Io
Tc = 88℃
IFSM
Sine wave, 10ms 1shot
Tj
Tstg
-40∼+150
* Out put current of center tap full wave connection.
**Rating per element
℃
3.2 ELECTRICAL CHARACTERISTICS (at Ta=25℃ unless otherwise specified.)
Item
Symbol
Conditions
Maximum
Units
Forward voltage***
VF
IF = 8 A
3.0
V
Reverse current***
IR
VR = VRRM
25
μA
Reverse recovery time
trr
IF=0.1A,IR=0.2A,Irec=0.05A
0.026
μs
1.5
℃/W
0.3∼0.5
N・m
2.0
g
Thermal resistance
Rth(j-c)
Junction to case
***Rating per element
3.3 MECHANICAL CHARACTERISTICS
Mounting torque
Recommended torque
Approximate mass
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
3.RATINGS
MS5D3304
3/12
H04-004-03a
4.TEST AND INSPECTION
4.1 STANDARD TEST CONDITION
Standard test condition is Ta=25℃、65%R.H.
If judgment is no doubt, the test condition is possible to test in normal condition
Ta=5∼35℃、48∼85%R.H.
4.2 STRUCTURE INSPECTION
It inspect with eye and measure, Item 2 shall be satisfied.
4.3 FORWARD AND REVERSE CHARACTERISTICS
It inspect on the standard condition, Item 3.2 shall be satisfied.
4.4 TEST
2
3
Mechanical test
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
1
Test
items
Terminal
strength
(Tensile)
Terminal
strength
(Bending)
Mounting
strength
4
Vibration
5
Shock
Solder ability 1
6
Solder ability 2
7
Resistance to
soldering heat
Testing methods and conditions
Pull force : 10N
Force maintaining duration :10±1s
Load force : 5N
Number of times : 2times(90deg./time)
Screwing torque value:(M3) : 40±10N・cm
Frequency : 100Hz to 2kHz
2
Acceleration : 100m/s
Sweeping time : 4min./1 cycle
4times for each X, Y&Z directions.
Peak amplitude : 15km/s2
Duration time : 0.5ms
3times for each X, Y&Z directions.
Solder : Sn-37Pb
Solder temp. : 235±5℃
Immersion time : 5±0.5s
Apply to flux
Solder : Sn-3Ag-0.5Cu
Solder temp. : 245±5℃
Immersion time : 5±0.5s
Apply to flux
Solder temp. : 260±5°C
Immersion time : 10±1s
Number of times : 1time
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
Test
No.
Reference
standard
EIAJ
ED4701
EIAJ
ED4701/401
method 1
EIAJ
ED4701/401
method 3
EIAJ
ED4701/402
method 2
Sampling
number
5
5
5
EIAJ
ED4701/403
test code D
5
EIAJ
ED4701/404
test code D
5
EIAJ
ED4701/303
test code A
5
−
5
EIAJ
ED4701/302
test code A
5
MS5D3304
Acceptance
number
(0 : 1)
4/12
H04-004-03a
High temp.
Storage
Low temp.
Storage
Temperature
humidity
storage
1
2
Endurance test
3
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Test
items
4
Temperature
humidity
bias
5
Unsaturated
pressurized
vapor
6
Temperature
cycle
7
Thermal
shock
8
9
10
Steady state
operating
life
Intermittent
operating
life
High temp.
Reverse
bias
Failure criteria
Testing methods and conditions
Temperature :Tstg max
Test duration : 1000h
Temperature :Tstg min
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Bias voltage : VRRM× 0.8
Test duration : 1000h
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48h
High temp. side : Tstg max
Room temp. : 5∼35℃
Low temp. side : Tstg min
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
Fluid : pure water(running water)
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
Ta=25±5°C
Rated load
Test duration : 1000h
Tj=Tjmax ∼50℃
3min ON, 3min OFF
Test duration : 10000cycles
Temperature : Ta=100 °C
Bias voltage : VR=VRRM duty=1/2
Test duration : 1000h
IR ≦USL x 5
VF≦USL x 1.1
Fuji Electric Device Technology Co.,Ltd.
Reference
standard
EIAJ ED4701
Sampling
number
EIAJ
ED4701/201
22
EIAJ
ED4701/202
22
EIAJ
ED4701/103
test code C
22
EIAJ
ED4701/103
test code C
22
EIAJ
ED4701/103
test code F
22
EIAJ
ED4701/105
22
EIAJ
ED4701/307
test code A
22
−
22
EIAJ
ED4701/106
22
EIAJ
ED4701/101
22
Acceptance
number
(0 : 1)
USL : Upper specification limit
DWG.NO.
Test
No.
MS5D3304
5/12
H04-004-03a
5.CAUTIONS
・Although Fuji Electric is continually improving product quality and reliability, a small percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from
causing physical injury, fire, or other problem in case any of the products fail. It is recommended to
make your design fail-safe, flame retardant, and free of malfunction.
・The products described in this specification are intended for use in the following electronic and
electrical equipment which has normal reliability requirements.
・Computers
・OA equipment ・Communications equipment (Terminal devices)
・Measurement equipment
・Machine tools
・AV equipment
・Electrical home appliances
・Personal equipment
・Industrial robots etc.
・The products described in this specification are not designed or manufactured to be used in equipment
or systems used under life-threatening situations. If you are considering using these products in the
equipment listed below, first check the system construction and required reliability, and take adequate
・Transportation equipment (automobiles, trains, ships, etc.)
・Backbone network equipment
・Traffic-signal control equipment
・Gas alarms, leakage gas auto breakers
・Submarine repeater equipment
・Burglar alarms, fire alarms, emergency equipment
・Medical equipment
・Nuclear control equipment etc.
・Do not use the products in this specification for equipment requiring strict reliability such as (but not
limited to):
・Aerospace equipment
・Aeronautical equipment
6.WARNINGS
・The Diodes should be used in products within their absolute maximum rating (voltage, current,
temperature, etc. ). The diodes may be destroyed if used beyond the rating.
・The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc…).
・Use the Diodes within their reliability and lifetime under certain environments or conditions.
The Diodes may fail before the target lifetime of your products if used under certain reliability
conditions.
・You must design the Diodes to be operated within the specified maximum ratings (voltage, current,
temperature, etc. ) to prevent possible failure or destruction of devices.
・Consider the possible temperature rise not only for the junction and case, but also for the outer leads.
・Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to
avoid electric shock and burns.
・The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame.
Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke
or flame in case the Diodes become even hotter during operation.
Design the arrangement to prevent the spread of fire.
・The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas.
(hydrogen sulfide, sulfurous acid gas.)
・The Diodes should not used in an irradiated field since they are not radiation proof.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
safety measures such as a backup system to prevent the equipment from malfunctioning.
MS5D3304
6/12
H04-004-03a
INSTALLATION
・Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Table 1: Solder temperature and duration
Solder
Method
Duration
temperature
Flow
260±5℃
10±1sec
Soldering iron
350±10℃
3.5±0.5sec
・The immersion depth of the lead should basically be up to the lead stopper and the distance
should be a maximum of 1.5mm from the device.
・When flow-soldering, be careful to avoid immersing the package in the solder bath.
・Refer to the following torque reference When mounting the device on a heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will
increase the thermal resistance, both of which conditions may destroy the device.
Package style
Screw
Recommended tightening torque
TO-220
M3
0.3∼0.5N・m
・The heat sink should have a flatness within ±30μm and roughness within 10μm. Also, keep
the tightening torque within the limits of this specification.
・Improper handling may cause isolation breakdown leading to a critical accident.
・We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is
important to evenly apply the compound and to eliminate any air voids.
STORAGE
・The Diodes must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45
to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
・The Diodes should not be subjected to rapid changes in temperature to avoid condensation on
the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is
steady.
・The Diodes should not be stored on top of each other, since this may cause excessive external
force on the case.
・The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may
cause presoldered connections to go fail during later processing.
・The Diodes should be stored in antistatic containers or shipping bags.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Table 2:Recommended tightening torque
MS5D3304
7/12
H04-004-03a
7.APPENDIX
・This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated
Diphenyl Ether ) , substances.
・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘Clean Air
Act of US’ law.
・If you have any questions about any part of this specification, please contact Fuji Electric Device
Technology or its sales agent before using the product
・Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in
accordance with the instructions.
・This specification does not confer any industrial property rights or other rights, nor constitute a
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
license for such rights.
MS5D3304
8/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Sn-Cu dipping (Pb<1000ppm)
Sn-Cu ディッピング(Pb<1000ppm)
MS5D3304
9/12
H04-004-03a
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
102
Tj=150°C
101
Tj=125°C
10
IR Reverse Current (µA)
Tj=100°C
IF Forward Current (A)
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
10
0
10-1
10-3
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0
2.8
100
200
300
400
500
600
700
VR Reverse Voltage (V)
VF Forward Voltage (V)
Reverse Power Dissipation (max.)
Forward Power Dissipation (max.)
0.035
30
DC
360°
360°
0.030
25
VR
I0
(W)
λ
α
(W)
20
Reverse Power Dissipation
Forward Power Dissipation
0.025
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
15
Square wave λ=180°
DC
0.020
α=180°
0.015
PR
10
WF
0.010
5
0.005
Per 1element
0.000
0
0
2
4
6
IF(AV) Average Forward Current
8
0
Fuji Electric Device Technology Co.,Ltd.
100
200
VR
(A)
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Tj=25°C
10-2
300
400
Reverse Voltage
MS5D3304
500
600
700
(V)
10/12
H04-004-03a
Peak Half - Wave Current
(A)
Cj
Tc
(°C)
110
Case Temperature
100
90
DC
80
70
Square wave λ=60°
30
0
1
2
4
6
8
10
12
14
10
16
IF(AV) Average Forward Current
18
20
Fuji Electric Device Technology Co.,Ltd.
Junction Capacitance (pF)
Square wave λ=180°
Sine wave λ=180°
Square wave λ=120°
DWG.NO.
IFSM
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f F u ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
160
Current Derating (IF(AV)-Tc) (max.)
1000
Junction Capacitance Characteristic (typ.)
150
140
130
120
100
10
60
50
40
22
1
(A)
1
10
100
VR
Reverse Voltage (V)
MS5D3304
1000
λ:Conduction angle of forward current for each rectifier element
IF(AV):Forward current of center-tap full wave connection
1000
Surge Capability (max.)
100
10
1
Number of Cycles at 50Hz
100
11/12
H04-004-03a
10
-3
10
-2
10
-1
t
Time
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f F u ji E le c t r ic
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Transient Thermal Impedance
(°C/W)
10
2
Transient Thermal Impedance (max.)
10
1
Rth j-c:1.5℃/W
10
0
10
-1
(sec)
10
0
10
1
10
2
MS5D3304
12/12
H04-004-03a