ETC 2SK3450-01

DATE
CHECKED Mar.-10-'01
NAME
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
SPECIFICATION
Device Name
:
Power MOSFET
Type Name
:
2SK3450-01
Spec. No.
:
MS5F4924
Date
:
Mar.-10-2001
Fuji Electric Co.,Ltd.
Matsumoto Factory
APPROVED
DRAWN Mar.-10-'01
Fuji Electric Co.,Ltd.
MS5F4924
a
1 / 19
H04-004-05
1.Scope
This specifies Fuji Power MOSFET 2SK3450-01
2.Construction
N-Channel enhancement mode power MOSFET
3.Applications
for Switching
4.Outview
TO-220
Outview See to 7/19 page
5.Absolute Maximum Ratings at Tc=25°° C (unless otherwise specified)
Symbol
Characteristics
Unit
600
V
Remarks
Drain-Source Voltage
VDS
Continuous Drain Current
ID
± 12
A
Pulsed Drain Current
IDP
± 48
A
Gate-Source Voltage
VGS
± 30
V
Maximum Avalanche Current
IAR
12
A
Maximum Avalanche Energy
EAV
235
mJ
Maximum Drain-Source dV/dt
dVDS/dt
20
kV/µs
VDS<=600V
Peak Diode Recovery dV/dt
dV/dt
5
kV/µs
*1
Maximum Power Dissipation
PD
2.0
W
115
Tch<=150°C
L=3.00mH
Vcc=60V
Ta=25°C
Tc=25°C
Operating and Storage
Tch
150
°C
Temperature range
Tstg
-55 to +150
°C
*1 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C
6.Electrical Characteristics at Tc=25°° C (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
600
-
-
V
3.0
-
5.0
V
-
-
25
ID=250µA
Drain-Source
Breakdown Voltage BVDSS
Gate Threshold
Voltage VGS(th)
Zero Gate Voltage
Drain Current IDSS
Gate-Source
Leakage Current IGSS
Drain-Source
On-State Resistance RDS(on)
VGS=0V
ID=250µA
VDS=VGS
VDS=600V
Tch=25°C
VGS=0V
VDS=480V
Tch=125°C
VGS=0V
µA
-
-
250
-
10
100
nA
-
0.50
0.65
Ω
VGS= ± 30V
VDS=0V
ID=6A
VGS=10V
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Description
MS5F4924
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H04-004-03
Dynamic Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
VDS=25V
5.5
11
-
S
ID=6A
Forward
Transconductance gfs
Input Capacitance
Ciss
VDS=25V
-
1600
2400
Output Capacitance
Coss
VGS=0V
-
160
240
7
10.5
Reverse Transfer
f=1MHz
Capacitance Crss
-
td(on)
Vcc=300V
-
18
27
tr
VGS=10V
-
16
24
td(off)
ID=6A
-
35
50
Turn-Off Time
tf
RGS=10Ω
-
8
15
Total Gate Charge
QG
Vcc=300V
-
34
51
Gate-Source Charge
QGS
ID=12A
-
12.5
19
Gate-Drain Charge
QGD
VGS=10V
-
11.5
17.5
min.
typ.
max.
Unit
12
-
-
A
-
1.00
1.50
V
-
0.75
-
µs
-
6.5
-
µC
min.
typ.
max.
Unit
Turn-On Time
ns
nC
Reverse Diode
Description
Symbol
Avalanche Capability
Conditions
L=3.00mH Tch=25°C
IAV
See Fig.1 and Fig.2
IF=12A
Diode Forward
On-Voltage VSD
VGS=0V
Tch=25°C
IF=12A
Reverse Recovery
Time trr
Reverse Recovery
VGS=0V
-di/dt=100A/µ s
Charge Qrr
Tch=25°C
7.Thermal Resistance
Description
Symbol
Channel to Case
Rth(ch-c)
1.09
°C/W
Channel to Ambient
Rth(ch-a)
62.0
°C/W
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
pF
MS5F4924
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3 / 19
H04-004-03
50Ω
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Fig.1 Test circuit
L
D.U.T
L=3.00mH
Vcc=60V
Single Pulse Test
MS5F4924
Vcc
Fig.2 Operating waveforms
+10V
VGS
-15V
IDP
BVDSS
0
VDS
ID
a
4 / 19
H04-004-03
8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards.
Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test
Items
1 Terminal
Strength
(Tensile)
Mechanical test methods
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
2 Terminal
Strength
(Bending)
3 Mounting
Strength
4 Vibration
5 Shock
6 Solderability
7 Resistance to
Soldering Heat
Testing methods and Conditions
Pull force
TO-220,TO-220F : 10N
TO-3P,TO-3PF,TO-247 : 25N
TO-3PL : 45N
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
Load force
TO-220,TO-220F : 5N
TO-3P,TO-3PF,TO-247 : 10N
TO-3PL : 15N
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
Screwing torque value: (M3)
TO-220,TO-220F : 40±10N
TO-3P,TO-3PF,TO-247 : 50±10N
TO-3PL : 70±10N
frequency : 100Hz to 2kHz
2
Acceleration : 100m/s
Sweeping time : 20min./1 cycle
6times for each X,Y&Z directions.
2
Peak amplitude: 15km/s
Duration time : 0.5ms
3times for each X,Y&Z directions.
Solder temp. : 235±5°C
Immersion time : 5±0.5sec
Each terminal shall be immersed in
the solder bath within 1 to 1.5mm from
the body.
Solder temp. : 260±5°C
Immersion time : 10±1sec
Number of times : 2times
Fuji Electric Co.,Ltd.
DWG.NO.
Test
No.
Reference
Standard
EIAJ ED4701
Sampling
number
Acceptance
number
A-111A
method 1
15
A-111A
method 3
15
A-112
method 2
15
A-121
test code C
15
(0:1)
A-122
test code D
15
A-131A
test code A
15
A-132
15
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H04-004-03
Test
Items
Testing methods and Conditions
1 High Temp.
Storage
2 Low Temp.
Storage
3 Temperature
Humidity
Storage
4 Temperature
Humidity
BIAS
Test for FET
Reference
Standard
EIAJ ED4701
B-111A
Temperature : 150+0/-5°C
Test duration : 1000hr
Temperature : -55+5/-0°C
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VDS(max) * 0.8
2 HTRB
(Gate-source)
Test duration : 1000hr
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 96hr
High temp.side : 150±5°C
Low temp.side : -55±5°C
Duration time : HT 30min,LT 30min
Number of cycles : 100cycles
Fluid : pure water(running water)
High temp.side : 100+0/-5°C
Low temp.side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
Ta=25±5°C
∆Tc=90degree
Tch≤Tch(max.)
Test duration : 3000 cycle
Temperature : 150+0/-5°C
Bias Voltage : VGS(max)
3 HTRB
(Drain-Source)
Test duration : 1000hr
Temperature : 150+0/-5°C
Bias Voltage : VDS(max)*0.8
5 Unsaturated
Pressurized
Vapor
6 Temperature
Cycle
7 Thermal Shock
1 Intermittent
Operating
Life
Sampling
number
Acceptance
number
22
B-112A
22
B-121A
test code C
22
B-122A
test code C
22
B-123A
test code C
22
B-131A
test code A
22
B-141A
test code A
22
D-322
22
D-323
22
D-323
22
(0:1)
(0:1)
Test duration : 1000hr
Failure Criteria
Symbols
Failure Criteria
Lower Limit
Upper Limit
Unit
Breakdown Voltage
BVDSS
LSL * 0.8
-----
V
Zero gate Voltage Drain-Source Current
IDSS
-----
USL * 2
A
Gate-Source Leakage Current
IGSS
-----
USL * 2
A
Gate Threshold Voltage
VGS(th)
LSL * 0.8
USL * 1.2
V
Drain-Source on-state Resistance
RDS(on)
Forward Transconductance
gfs
Diode forward on-Voltage
VSD
-----
USL * 1.2
Ω
LSL * 0.8
-----
S
-----
USL * 1.2
V
Marking
Soldering
-----
With eyes or Microscope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Fuji Electric Co.,Ltd.
DWG.NO.
Electrical
Characteristics
Item
Outview
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Climatic test methods
Test
No.
MS5F4924
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H04-004-03
DWG.NO.
Fuji Electric Co.,Ltd.
MS5F4924
a
7 / 19
H04-004-03
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
9 Warning
9.1. Although Fuji Electric is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you
are requested to take adequate safety measures to prevent the equipment from causing a physical
injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design fail-safe, flame retardant, and free of malfunction.
9.2. The products introduced in this Specification are intended for use in the following electronic and
electrical equipment witch has normal reliability requirements.
• Communications equipment (Terminal devices)
• Machine tools
• AV equipments
• Personal equipments
• Industrial robots
etc…
9.3. If you need to use a product in this Specification for equipment requiring higher reliability than normal,
such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval.
When using these products for such equipment, take adequate measures such as a backup system to
prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment
becomes faulty.
• Transportation equipment (Automotives, Locomotives and ships etc…)
• Backbone network equipment
• Traffic-signal control equipment
• Gas alarm, Leakage gas auto breaker
• Burglar alarm, Fire alarm, Emergency equipments etc…
9.4. Don’t use products in this Specification for the equipment requiring strict reliability such as
(without limitation)
• Aerospace equipment
• Aeronautic equipment
• nuclear control equipment
• Medical equipment
• Submarine repeater equipment
10. General Notice
10.1. Preventing ESD Damage
Although the gate oxide of Fuji Power MOSFETs is much higher ruggedness to ESD damage than
small-Signal MOSFETs and CMOS ICs, careful handling of any MOS devices are an important
consideration.
1) When handling MOSFETs, hold them by the case (package) and don’t touch the leads and
terminals.
2) It is recommended that any handling of MOSFETs is done while used electrically conductive floor and
tablemats that are grounded.
3) Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by
grounding out through a high impedance resistor (about 1MΩ)
4) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or
soldering bath through a low impedance resistor.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
• Computers OA equipments
• Measurement equipments
• Electrical home appliances
MS5F4924
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H04-004-03
10.2. Short mode failure / Open mode failure
The MOSFETs may be in the risk of having short mode failure or open mode failure when the applied
over voltage, over current or over temperature each specified maximum rating. It is recommended to
use the fail-safe equipment or circuit from such possible failures.
10.3. An Electric shock / A Skin burn
You may be in risk for an Electric shock or a Skin burn for directly touching to the leads or package of
the MOSFETs while turning on electricity or operating.
10.4. Smoke / Fire
Fuji MOSFETs are made of incombustibility material. However, a failure of the MOSFETs may emit
smoke or fire. Also, operating the MOSFETs near any flammable place or material may risk the
MOSFETs to emit smoke or fire due to the MOSFETs reach high temperature while operated.
10.6. Radiation field
Don’t use of the device under the radiation field since the device is not designed for radiation proofing.
11. Notes for Design
11.1. You must design the MOSFETs to be operated within specified maximum ratings (Voltage, Current,
Temperature etc…) which are imperative to prevent possible failure or destruction of the device.
11.2. We recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent
the fire or damage in case of unexpected accident may have occurred.
11.3. You must design the MOSFETs within it’s reliability and lifetime in certain the environment or condition.
There is a risk that MOSFETs breakdown earlier than the target lifetime of the your products when
MOSFETs was used in the reliability condition excessively. Especially avoid use of the MOSFETs
under the higher humidity, corrosive gases.
11.4. We recommend to consider for the temperature rise not only for the Channel but also for the Leads if it
designed to large current operation to the MOSFETs.
11.5. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous
Avalanche capability which can be assumed as abnormal condition. Please note the device may be
destructed from the Avalanche over the specified maximum rating.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
10.5. Corrosion / Erosion
Avoid use or storage of the MOSFETs under the higher humidity, corrosive gases. It will lead the device
to corrode and possibly cause the device to fail.
MS5F4924
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H04-004-03
12. Note on implementation
12.1. Soldering
Soldering involves temperatures witch exceed the device storage temperature rating. To avoid device
damage and to ensure reliability, the following guidelines from the quality assurance standard must be
observed.
1) Solder temperature and duration (Through-Hole Package)
Solder temperature
Duration
260±5 °C
10±1 seconds
350±10 °C
3.5±0.5 seconds
2) The device should not be soldered closer than 1mm from the package. (* through-hole package)
3) When flow soldered, care must be taken to Avoid immersing the package in the solder-bath.
Table 1 : Recommended tightening torques.
Package style
TO-220
TO-220F
TO-3P
TO-3PF
TO-247
TO-3PL
Screw
Recommended tightening
torques
M3
30 – 50 Ncm
M3
40 – 60 Ncm
M3
60 –80 Ncm
12.3. If the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a
point may cause the MOSFETs to be destructed. We recommend in such condition to process the
surface of heat sink within ±50µm and use of thermal compound to optimize its efficiency of heat
radiation. Moreover, it is important to evenly apply the compound and eliminate any air voids. A simple
method is to apply a dot of compound of the appropriate quantity to the center of the case just below
the chip mount.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
12.2. Please see to the following the Torque reference when mounting the device to heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will increase the
thermal resistance. Both of these conditions may lead the device to be destructed.
MS5F4924
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H04-004-03
13.Notes for Storage
13.1. The MOSFETs should be stored at a standard temperature of 5 to 35 °C and humidity of 45 to
75%RH. If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
13.2. Avoid exposure to corrosive gases and dust.
13.3. Rapid temperature changes may cause condensation on the MOSFETs surface. Therefore, store
the MOSFETs in a place with few temperature changes.
13.4. While in storage, it is important that nothing be loaded on top of the MOSFETs, since this may
cause excessive external force on the case.
13.5. Store MOSFETs with unprocessed lead terminals. Rust may cause presoldered connections to go
bad during later processing.
14. Additional points
If you have any question about any portion in this Specification, ask Fuji Electric or its sales agents before
using the product. Neither Fuji nor its agents shall be liable for any injury caused bay any use of the
products not in accordance with instructions set forth herein.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
13.6. Use only antistatic containers or shipping bag for storing MOSFETs.
MS5F4924
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11 / 19
H04-004-03
0
25
10
1
10
0
50
Fuji Electric Co.,Ltd.
DWG.NO.
ID [A]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
PD [W]
150
Allowable Power Dissipation
PD=f(Tc)
125
100
75
50
25
0
75
100
t
D= T
10
1
10
2
125
150
Tc [°C]
Safe operating area
ID=f(VDS):Single Pulse,Tc=25 °C
10
2
t=
1µs
10µs
D.C.
100µs
0
1ms
10
10ms
t
100ms
-1
T
10
10
MS5F4924
3
VDS [V]
a
12 / 19
H04-004-03
0
0
2
1
4
2
6
8
3
Fuji Electric Co.,Ltd.
4
5
VGS[V]
DWG.NO.
ID[A]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
ID [A]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
30
28
26
24
20V
10V
8V
22
7.5V
20
18
16
14
7.0V
12
10
8
6
VGS=6.5V
4
2
0
10 12
VDS [V]
14
6
16
7
18
8
20
9
22
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10
1
0.1
10
MS5F4924
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H04-004-03
0.1
1.3
VGS=6.5V
0
2
4
6
8
Fuji Electric Co.,Ltd.
10
12
DWG.NO.
RDS(on) [ Ω ]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
gfs [S]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
1
10
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
1.4
7.0V
1.2
1.1
1.0
0.9
7.5V
0.8
8V
10V
0.7
20V
0.6
0.5
0.4
0.3
0.2
0.1
0.0
ID [A]
14
16
18
20
22
24
26
MS5F4924
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H04-004-03
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
2.0
1.8
1.6
RDS(on) [ Ω ]
1.4
1.2
1.0
max.
0.8
typ.
0.6
0.4
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
0.2
0.0
-50
-25
0
25
50
Tch [°C]
75
100
125
150
125
150
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
max.
VGS(th) [V]
5.0
4.5
typ.
4.0
3.5
min.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-25
0
Fuji Electric Co.,Ltd.
25
50
75
Tch [°C]
DWG.NO.
-50
100
MS5F4924
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H04-004-03
VGS [V]
16
0
10
-1
10
20
30
10
0
Fuji Electric Co.,Ltd.
DWG.NO.
C [F]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Typical Gate Charge Characteristics
VGS=f(Qg):ID=12A,Tch=25 °C
24
22
20
Vcc= 120V
18
300V
480V
14
12
10
8
6
4
2
0
40
50
10
1
60
1n
100p
10
2
70
80
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10n
Ciss
Coss
10p
Crss
1p
10
MS5F4924
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VDS [V]
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H04-004-03
0.1
0.00
0.25
0.50
0.75
Fuji Electric Co.,Ltd.
1.00
DWG.NO.
t [ns]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
IF [A]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
10
1
1.25
10
0
1.50
1
td(on)
10
1.75
td(off)
2.00
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
10
2
tr
tf
10
0
10
1
ID [A]
MS5F4924
a
17 / 19
H04-004-03
0
10
2
10
-8
25
10
-7
50
10
-6
Fuji Electric Co.,Ltd.
DWG.NO.
Avalanche Current I AV [A]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
EAV [mJ]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=12A
300
250
200
150
100
50
0
75
100
10
-5
10
-4
125
150
starting Tch [°C]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=60V
10
1
Single Pulse
10
0
10
-1
10
-2
10
-3
MS5F4924
10
-2
tAV [sec]
a
18 / 19
H04-004-03
Zth(ch-c) [K/W]
0
10
-1
10
10
-2
10
-5
10
-4
10
-3
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
10
1
0.5
0.2
0.1
0.05
0.02
t
D=
0.01
10
-2
10
-1
MS5F4924
t
T
T
0
10
0
10
1
t [s]
a
19 / 19
H04-004-03