Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0300 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0␣ GHz • 10.0␣ dBm Typical P 1 dB at 1.0␣ GHz The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Chip Outline[1] Description The MSA-0300 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, “Chip Use”. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) C block IN C block OUT MSA Vd = 5 V 5965-9565E 6-290 Note: 1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. MSA-0300 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 45°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25°C. 3. Derate at 22.2 mW/°C for TC > 181°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions[2]: Id = 35 mA, ZO = 50 Ω Units Min. Typ. GP Power Gain (|S21| 2) f = 0.1 GHz dB 12.5 ∆GP Gain Flatness f = 0.1 to 1.8 GHz dB ± 0.6 f3 dB 3 dB Bandwidth VSWR GHz Input VSWR 2.8 f = 0.1 to 3.0 GHz Output VSWR f = 0.1 to 3.0 GHz NF 50 Ω Noise Figure f = 1.0 GHz Max. 1.8:1 1.8:1 dB 6.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 23.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 125 4.5 5.0 5.5 –8.0 Notes: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. Part Number Ordering Information Part Number MSA-0300-GP4 Devices Per Tray 100 6-291 MSA-0300 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 35 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .13 .13 .12 .11 .11 .10 .11 .16 .23 .29 .35 .38 .41 .43 –179 –179 –179 –177 –172 –166 –145 –140 –141 –149 –157 –164 179 153 12.6 12.6 12.5 12.5 12.4 12.4 12.0 11.5 10.8 9.8 8.7 7.6 5.5 3.6 4.28 4.27 4.24 4.22 4.19 4.15 4.00 3.76 3.47 3.10 2.72 2.40 1.88 1.51 177 172 165 158 152 144 126 109 97 82 67 55 35 18 –18.6 –18.3 –18.3 –18.2 –17.8 –17.7 –17.1 –16.2 –15.6 –15.2 –14.5 –14.3 –13.7 –13.3 .118 .121 .121 .123 .129 .130 .139 .154 .166 .173 .188 .193 .206 .217 2 3 5 8 11 1 1 2 2 24 21 22 17 14 .09 .10 .12 .14 .17 .20 .24 .27 .28 .28 .27 .25 .21 .21 –13 –27 –48 –65 –76 –85 –104 –122 –133 –145 –148 –146 –134 –137 1.21 1.19 1.19 1.18 1.15 1.14 1.09 1.03 0.99 0.99 0.97 1.00 1.14 1.27 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) Gain Flat to DC G p (dB) 12 14 12 13 12 GP 11 11 10 8 6 P1 dB 10 8 4 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 6 2 0 0.3 0.5 1.0 3.0 6.0 15 20 25 FREQUENCY (GHz) 30 35 40 50 Figure 2. Power Gain vs. Current. 18 7.0 15 I d = 50 mA NF (dB) P1 dB (dBm) 6.5 12 9 I d = 35 mA 6.0 6 5.5 I d = 20 mA 3 I d = 35 mA I d = 20 mA 0 0.1 0.2 0.3 I d = 50 mA 5.0 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-292 6 NF 4 –55 –25 +25 +85 +125 TEMPERATURE (°C) I d (mA) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 35 mA. 7 5 4 0.1 9 8 NF (dB) G p (dB) G p (dB) 10 Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 35 mA. P1 dB (dBm) 14 MSA-0300 Chip Dimensions NOT APPLICABLE INPUT 365 µm 14.4 mil GROUND OPTIONAL [1] OUTPUT 365 µm 14.4 mil Unless otherwise specified, tolerances are ±13 µm / ±0.5 mils. Chip thickness is 5.5 ± 0.5 mils. Bond Pads are 41 µm / 1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die. 6-293