HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .............................................................................................................................................. -50 ~ +150 °C Junction Temperature ....................................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................................... 20 W • Maximum Voltages and Currents (TC=25°C) VCBO Collector to Emitter Voltage ........................................................................................................................................ 700 V VCEO Collector to Emitter Voltage ........................................................................................................................................ 400 V VEBO Emitter to Base Voltage................................................................................................................................................... 9 V IC Collector Current ........................................................................................................................................... Continuous 1.2 A IB Base Current................................................................................................................................................... Continuous 0.3A Electrical Characteristics (TC=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 700 - - V IB=1mA BVCEO 400 - - V IC=10mA IEBO - - 1 mA VEB=9V ICEX - - 1 mA VCE=700V, VBE(off)=1.5V *VCE(sat)1 - - 500 mV IC=0.5A, IB=0.1A *VCE(sat)2 - - 1 V IC=1A, IB=0.25A *VCE(sat)3 - - 3 V IC=1.5A, IB=0.5A *VBE(sat) - - 1 V IC=0.5A, IB=0.1A *VBE(sat) - - 1.2 V IC=1A, IB=0.25A *hFE1 8 - 40 IC=0.3A, VCE=5V *hFE2 5 - 25 IC=1A, VCE=5V *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HLB123SA HSMC Product Specification HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve IC & hFE IC & VBE(sat) 10 100 VBE(sat) (V) hFE VCE=5V 10 1 VBE(sat) @ IC=5IB 1 0.001 0.01 0.1 1 0.1 0.001 10 0.01 0.1 IC (A) 1 10 1 10 IC (A) IC & VBE(sat) IC & VCE(sat) 10 100 VCE(sat) (V) VBE(sat) (V) 10 1 VBE(sat) @ IC=4IB VCE(sat) @ IC=5IB 1 0.1 0.1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 IC (A) IC (A) IC & VCE(sat) Capacitance & Reverse-Biased Voltage 10 Capacitance (pF) 100 VCE(sat) (V) 1 0.1 10 VCE(sat) @ IC=4IB 0.01 0.001 1 0.01 0.1 IC (A) HLB123SA 1 10 0.1 1 10 100 Reverse-Biased Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 3/5 MICROELECTRONICS CORP. IC & Ton IC & Ts 10 10 TS (us) Ton (us) 1 1 VCE=125V IC=5IB1=-5IB2 VCE=125V IC=5IB1=-5IB2 0.1 0.1 1 10 0.1 0.1 1 10 0.01 IC (A) IC (A) IC & Toff 1 TS (us) VCE=125V IC=5IB1=-5IB2 0.1 0.1 1 10 IC (A) HLB123SA HSMC Product Specification HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 4/5 MICROELECTRONICS CORP. TO-92 Dimension Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 DIM A B C D E F G H I α1 α2 α3 Marking: α2 A 2 H L B 1 2 3 SA 3 Control Code Date Code α3 Note: Green label is used for pb-free packing C Pin Style: 1.Emitter 2.Collector 3.Base D H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5° *2° *2° *: Typical, Unit: mm α1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB123SA HSMC Product Specification HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) o 100 C o 150 C - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec o 183 C 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245 C ±5 C 10sec ±1sec Pb-Free devices. o o 260 C ±5 C 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products HLB123SA o o HSMC Product Specification