HSMC HLB123SA

HI-SINCERITY
Spec. No. : HA200601
Issued Date : 2006.12.01
Revised Date : 2006.12.28
Page No. : 1/5
MICROELECTRONICS CORP.
HLB123SA
NPN EPITAXIAL PLANAR TRANSISTOR
Description
• High Voltage, High Speed Power Switch
• Switch Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .............................................................................................................................................. -50 ~ +150 °C
Junction Temperature ....................................................................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TC=25°C) ....................................................................................................................................... 20 W
• Maximum Voltages and Currents (TC=25°C)
VCBO Collector to Emitter Voltage ........................................................................................................................................ 700 V
VCEO Collector to Emitter Voltage ........................................................................................................................................ 400 V
VEBO Emitter to Base Voltage................................................................................................................................................... 9 V
IC Collector Current ........................................................................................................................................... Continuous 1.2 A
IB Base Current................................................................................................................................................... Continuous 0.3A
Electrical Characteristics (TC=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
700
-
-
V
IB=1mA
BVCEO
400
-
-
V
IC=10mA
IEBO
-
-
1
mA
VEB=9V
ICEX
-
-
1
mA
VCE=700V, VBE(off)=1.5V
*VCE(sat)1
-
-
500
mV
IC=0.5A, IB=0.1A
*VCE(sat)2
-
-
1
V
IC=1A, IB=0.25A
*VCE(sat)3
-
-
3
V
IC=1.5A, IB=0.5A
*VBE(sat)
-
-
1
V
IC=0.5A, IB=0.1A
*VBE(sat)
-
-
1.2
V
IC=1A, IB=0.25A
*hFE1
8
-
40
IC=0.3A, VCE=5V
*hFE2
5
-
25
IC=1A, VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HLB123SA
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200601
Issued Date : 2006.12.01
Revised Date : 2006.12.28
Page No. : 2/5
MICROELECTRONICS CORP.
Characteristics Curve
IC & hFE
IC & VBE(sat)
10
100
VBE(sat) (V)
hFE
VCE=5V
10
1
VBE(sat) @ IC=5IB
1
0.001
0.01
0.1
1
0.1
0.001
10
0.01
0.1
IC (A)
1
10
1
10
IC (A)
IC & VBE(sat)
IC & VCE(sat)
10
100
VCE(sat) (V)
VBE(sat) (V)
10
1
VBE(sat) @ IC=4IB
VCE(sat) @ IC=5IB
1
0.1
0.1
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
IC (A)
IC (A)
IC & VCE(sat)
Capacitance & Reverse-Biased Voltage
10
Capacitance (pF)
100
VCE(sat) (V)
1
0.1
10
VCE(sat) @ IC=4IB
0.01
0.001
1
0.01
0.1
IC (A)
HLB123SA
1
10
0.1
1
10
100
Reverse-Biased Voltage (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200601
Issued Date : 2006.12.01
Revised Date : 2006.12.28
Page No. : 3/5
MICROELECTRONICS CORP.
IC & Ton
IC & Ts
10
10
TS (us)
Ton (us)
1
1
VCE=125V
IC=5IB1=-5IB2
VCE=125V
IC=5IB1=-5IB2
0.1
0.1
1
10
0.1
0.1
1
10
0.01
IC (A)
IC (A)
IC & Toff
1
TS (us)
VCE=125V
IC=5IB1=-5IB2
0.1
0.1
1
10
IC (A)
HLB123SA
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200601
Issued Date : 2006.12.01
Revised Date : 2006.12.28
Page No. : 4/5
MICROELECTRONICS CORP.
TO-92 Dimension
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
B
1
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Marking:
α2
A
2
H
L B
1 2 3 SA
3
Control Code
Date Code
α3
Note: Green label is used for pb-free packing
C
Pin Style: 1.Emitter 2.Collector 3.Base
D
H
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
G
Min.
4.33
4.33
12.70
0.36
3.36
0.36
-
Max.
4.83
4.83
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
*: Typical, Unit: mm
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
H2
H2A H2A
H2
D2
A
H3
H4 H
L
L1
H1
W1
W
D1
F1F2
T2
T
T1
P1
P
P2
D
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056
Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB123SA
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200601
Issued Date : 2006.12.01
Revised Date : 2006.12.28
Page No. : 5/5
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
o
100 C
o
150 C
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
o
183 C
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
Pb devices.
245 C ±5 C
10sec ±1sec
Pb-Free devices.
o
o
260 C ±5 C
10sec ±1sec
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
60~150 sec
240 C +0/-5 C
Peak Temperature (TP)
o
3. Flow (wave) soldering (solder dipping)
Products
HLB123SA
o
o
HSMC Product Specification