DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1.2 MAX. 1.0 ±0.05 0.25 FEATURES 3° +5° –3° • 1.8 V drive available • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A) RDS(on)3 = 22.5 mΩ MAX. (VGS = −2.5 V, ID = −4.5 A) RDS(on)4 = 41.5 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A) • Built-in G-S protection diode against ESD 1 6.4 ±0.2 3.15 ±0.15 3.0 ±0.1 µPA1816GR-9JG Power TSSOP8 0.65 0.27 +0.03 –0.08 4.4 ±0.1 0.145 ±0.055 PACKAGE 0.6 +0.15 –0.1 4 ORDERING INFORMATION PART NUMBER 0.5 0.1 ±0.05 1.0 ±0.2 0.1 0.8 MAX. 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −12 V Gate to Source Voltage (VDS = 0 V) VGSS m 8.0 V Drain Current (DC) (TA = 25°C) ID(DC) m 9.0 A ID(pulse) m 36 A Drain Current (pulse) Note1 Total Power Dissipation Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16252EJ1V0DS00 (1st edition) Date Published July 2002 NS CP(K) Printed in Japan © 2002 µ PA1816 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = −12 V, VGS = 0 V Gate Leakage Current IGSS VGS = Gate Cut-off Voltage Drain to Source On-state Resistance TYP. m 8.0 V, VDS = 0 V VDS = −10 V, ID = −1.0 mA VGS(off) Forward Transfer Admittance MIN. −0.45 −0.75 MAX. UNIT −1.0 µA m 10 µA −1.5 V | yfs | VDS = −10 V, ID = −4.5 A RDS(on)1 VGS = −4.5 V, ID = −4.5 A 12.0 15 mΩ RDS(on)2 VGS = −4.0 V, ID = −4.5 A 12.5 16 mΩ RDS(on)3 VGS = −2.5 V, ID = −4.5 A 16.2 22.5 mΩ RDS(on)4 VGS = −1.8 V, ID = −2.5 A 23.7 41.5 mΩ 11 22 S Input Capacitance Ciss VDS = −10 V 1570 pF Output Capacitance Coss VGS = 0 V 400 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 240 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −4.5 A 16 ns VGS = −4.0 V 132 ns RG = 10 Ω 223 ns 295 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −10 V 15 nC Gate to Source Charge QGS VGS = −4.0 V 3.0 nC Gate to Drain Charge QGD ID = −9.0 A 4.5 nC VF(S-D) IF = 9.0 A, VGS = 0 V 0.82 V Reverse Recovery Time trr IF = 9.0 A, VGS = 0 V 490 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 580 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE VGS (−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% VDS (−) VDD PG. 90% 90% VDS VDS VGS (−) 0 Wave Form 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 D.U.T. 90% Data Sheet G16252EJ1V0DS IG = −2 mA RL 50 Ω VDD µ PA1816 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 2 1.5 1 Mounted on ceramic substrate of 2 5000 mm x 1.1 mm 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 PW = 1 ms ID(DC) -10 10 ms -1 -0.1 R DS(on) Limited (VGS = −4.5 V) 100 ms DC Single Pulse Mounted on ceramic substrate of 2 5000 mm x 1.1 mm -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) 100 62.5°C/W 10 Single Pulse Mounted on ceramic 2 substrate of 5000 mm x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16252EJ1V0DS 3 µ PA1816 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -40 -100 −4.0 V V D S = −10 V Pulsed -10 −2.5 V VGS = −4.5 V -30 ID - Drain Current - A ID - Drain Current - A Pulsed -20 −1.8 V -1 T A = 125°C 75°C 25°C −25°C -0.1 -0.01 -10 -0.001 0 -0.0001 0 -0.2 -0.4 -0.6 -0.8 -1 0 VDS - Drain to Source Voltage - V VGS(off) - Gate Cut-off Voltage - V VDS = −10 V ID = −1.0 mA -0.8 -0.6 -0.4 0 50 100 -2 VDS = −10 V Pulsed 10 T A = −25°C 25°C 75°C 125°C 1 -0.1 -1 -10 -100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed VGS = −1.8 V, ID = −1.5 A 30 VGS = −2.5 V, ID = −4.5 A 20 10 VGS = −4.0 V, ID = −4.5 A VGS = −4.5 V, ID = −4.5 A 0 -50 0 50 100 150 40 Pulsed 30 20 ID = −4.5 A 10 Tch - Channel Temperature - °C 4 -1.5 100 0.1 -0.01 150 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ -50 -1 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1 -0.5 VGS - Gate to Source Voltage - V 0 0 -2 -4 -6 VGS - Gate to Source Voltage - V Data Sheet G16252EJ1V0DS -8 µ PA1816 20 VGS = −4.5 V Pulsed TA = 125°C 15 75°C 25°C −25°C 10 5 -0.01 -0.1 -1 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 VGS = −4.0 V Pulsed TA = 125°C 75°C 15 25°C −25°C 10 5 -0.01 -0.1 ID - Drain Current - A VGS = −2.5 V Pulsed 30 TA = 125°C 75°C 25°C −25°C 20 10 0 -0.01 -0.1 -1 -10 -100 40 30 20 10 TA = 125°C 75°C 25°C −25°C 0 -0.01 -0.1 -1 -10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS C iss 1000 C oss C rss -1 -10 td(on), tr, td(off), tf - Switching Time - ns 10000 V GS = 0 V f = 1.0 MHz 100 -0.1 -100 VGS = −1.8 V Pulsed ID - Drain Current - A 10000 Ciss, Coss, Crss - Capacitance - pF -10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 -1 ID - Drain Current - A 1000 -100 V DD = −10 V V GS = −4.0 V R G = 10 Ω tf t d(off) 100 t d(on) 10 -100 VDS - Drain to Source Voltage - V 1 -0.01 tr -0.1 -1 -10 ID - Drain Current - A Data Sheet G16252EJ1V0DS 5 µ PA1816 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 100 ID = −9.0 A VGS - Gate to Source Voltage - V IF - Diode Forward Current - A Pulsed 10 1 VGS = 0 V 0.1 VDD = −10 V −6.0 V −2.0 V -3 -2 -1 0 0.01 0.4 0.6 0.8 1 1.2 0 5 10 15 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V 6 -4 Data Sheet G16252EJ1V0DS 20 µ PA1816 [MEMO] Data Sheet G16252EJ1V0DS 7 µ PA1816 • The information in this document is current as of July, 2002. 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