ETC NT256D64S88AAG

NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
184pin One Bank Unbuffered DDR SDRAM MODULE Based on DDR266/200 32Mx8 SDRAM
Features
• 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module
• DRAM DLL aligns DQ and DQS transitions with clock
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
transitions.
• Performance:
• Address and control signals are fully synchronous to positive
PC1600
clock edge
PC2100
Speed Sort
- 8B
- 75B
- 7K
DIMM CAS Latency
2
2.5
2
• Programmable Operation:
Unit
- DIMM CAS Latency: 2, 2.5
f CK Clock Frequency
100
133
133
MHz
t CK Clock Cycle
10
7.5
7.5
ns
f DQ DQ Burst Frequency
200
266
266
MHz
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write
• Auto-Refresh (CBR) and Self-Refresh Modes
• Intended for 100 MHz and 133 MHz applications
• Automatic and controlled precharge commands
• Inputs and outputs are SSTL-2 compatible
• 13/10/1 Addressing (row/column/bank)
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
• 7.8 µs Max. Average Periodic Refresh Interval
• SDRAMs have 4 internal banks for concurrent operation
• Serial Presence Detect
• Module has one physical bank
• Gold contacts
• Differential clock inputs
• SDRAMs in 66-pin TSOP Type II Package
• Data is read or written on both clock edges
Description
NT256D64S88AAG is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM),
organized as a one-bank high-speed memory array. The 32Mx64 module is a single-bank DIMM that uses eight 32Mx8 DDR
SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use
in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 controls all
devices on the DIMM.
Prior to any access operation, the device CAS latency and burst type/ length/operation type must be programmed into the DIMM by
address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.
These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common
design files minimizes electrical variation between suppliers.
The DIMM uses serial presence detects implemented via a serial EEPROM using the two-pin IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The last 128 bytes are available to the customer.
All NANYA 184 DDR SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
Ordering Information
Part Number
NT256D64S88AAG-7K
NT256D64S88AAG-75B
NT256D64S88AAG-8B
REV 1.1
08/2002
Speed
143MHz (7ns @ CL = 2.5)
Organization
Leads
Power
32Mx64
Gold
2.5V
PC2100
133MHz (7.5ns @ CL= 2)
133MHz (7.5ns @ CL= 2.5)
PC2100
100MHz (10ns @ CL = 2)
125MHz (8ns @ CL = 2.5)
PC1600
100MHz (10ns @ CL = 2)
1
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Pin Description
CK0, CK1, CK2,
Differential Clock Inputs
CK0, CK1, CK2
DQ0-DQ63
Data input/output
CKE0
Clock Enable
DQS0-DQS7,
RAS
Row Address Strobe
DQS9-DQS16
CAS
Column Address Strobe
VDD
Power (2.5V)
WE
Write Enable
VDDQ
Supply voltage for DQs (2.5V)
Bi-directional data strobes
S0
Chip Selects
VSS
Ground
A0-A9, A11, A12
Address Inputs
NC
No Connect
A10/AP
Address Input/Auto-precharge
SCL
Serial Presence Detect Clock Input
BA0, BA1
SDRAM Bank Address Inputs
SDA
Serial Presence Detect Data input/output
VREF
Ref. Voltage for SSTL_2 inputs
SA0-2
Serial Presence Detect Address Inputs
VDDID
VDD Identification flag.
VDDSPD
Serial EEPROM positive power supply (2.5V)
Pinout
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
1
VREF
93
VSS
32
A5
124
VSS
62
VDDQ
154
Back
RAS
2
DQ0
94
DQ4
33
DQ24
125
A6
63
WE
155
DQ45
3
VSS
95
DQ5
34
VSS
126
DQ28
64
DQ41
156
VDDQ
4
DQ1
96
VDDQ
35
DQ25
127
DQ29
65
CAS
157
S0
5
DQS0
97
DQS9
36
DQS3
128
VDDQ
66
VSS
158
NC
6
DQ2
98
DQ6
37
A4
129
DQS12
67
DQS5
159
DQS14
7
VDD
99
DQ7
38
VDD
130
A3
68
DQ42
160
VSS
8
DQ3
100
VSS
39
DQ26
131
DQ30
69
DQ43
161
DQ46
DQ47
9
NC
101
NC
40
DQ27
132
VSS
70
VDD
162
10
NC
102
NC
41
A2
133
DQ31
71
NC
163
NC
11
VSS
103
NC
42
VSS
134
NC
72
DQ48
164
VDDQ
12
DQ8
104
VDDQ
43
A1
135
NC
73
DQ49
165
DQ52
13
DQ9
105
DQ12
44
NC
136
VDDQ
74
VSS
166
DQ53
14
DQS1
106
DQ13
45
NC
137
CK0
75
CK2
167
NC
15
VDDQ
107
DQS10
46
VDD
138
CK0
76
CK2
168
VDD
16
CK1
108
VDD
47
NC
139
VSS
77
VDDQ
169
DQS15
17
CK1
109
DQ14
48
A0
140
NC
78
DQS6
170
DQ54
18
VSS
110
DQ15
49
NC
141
A10
79
DQ50
171
DQ55
19
DQ10
111
NC
50
VSS
142
NC
80
DQ51
172
VDDQ
20
DQ11
112
VDDQ
51
NC
143
VDDQ
81
VSS
173
NC
21
CKE0
113
NC
52
BA1
144
NC
82
VDDID
174
DQ60
22
VDDQ
114
DQ20
83
DQ56
175
DQ61
KEY
KEY
23
DQ16
115
A12
53
DQ32
145
VSS
84
DQ57
176
VSS
24
DQ17
116
VSS
54
VDDQ
146
DQ36
85
VDD
177
DQS16
25
DQS2
117
DQ21
55
DQ33
147
DQ37
86
DQS7
178
DQ62
26
VSS
118
A11
56
DQS4
148
VDD
87
DQ58
179
DQ63
27
A9
119
DQS11
57
DQ34
149
DQS13
88
DQ59
180
VDDQ
28
DQ18
120
VDD
58
VSS
150
DQ38
89
VSS
181
SA0
29
A7
121
DQ22
59
BA0
151
DQ39
90
NC
182
SA1
30
VDDQ
122
A8
60
DQ35
152
VSS
91
SDA
183
SA2
31
DQ19
123
DQ23
61
DQ40
153
DQ44
92
SCL
184
VDDSPD
Note: All pin assignments are consistent for all 8-byte unbuffered versions.
REV 1.1
08/2002
2
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Input/Output Functional Description
Symbol
Type
CK0, CK1, CK2
(SSTL)
CK0, CK1, CK2
(SSTL)
CKE0
(SSTL)
Positive The positive line of the differential pair of system clock inputs. All the DDR SDRAM
Edge
Negative
Edge
Active
High
(SSTL)
Active
Low
RAS, CAS, WE
(SSTL)
Active
Low
VREF
Supply
VDDQ
Supply
BA0, BA1
(SSTL)
S0
Function
Polarity
address and control inputs are sampled on the rising edge of their associated clocks.
The negative line of the differential pair of system clock inputs.
Activates the SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode, or the Self-Refresh
mode.
Enables the associated SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored
but previous operations continue.
When sampled at the positive rising edge of the clock, RAS, CAS, WE define the operation
to be executed by the SDRAM.
Reference voltage for SSTL-2 inputs
Isolated power supply for the DDR SDRAM output buffers to provide improved noise
immunity
-
Selects which SDRAM bank is to be active.
During a Bank Activate command cycle, A0-A12 defines the row address (RA0-RA12)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9 defines the column address (CA0-CA9)
A0 - A9
A10/AP
A11, A12
when sampled at the rising clock edge. In addition to the column address, AP is used to
(SSTL)
-
invoke Auto-precharge operation at the end of the Burst Read or Write cycle. If AP is high,
auto-precharge is selected and BA0/BA1 define the bank to be precharged. If AP is low,
auto-precharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control
which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the
state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to pre-charge.
DQ0 - DQ63
(SSTL)
-
DQS0 - DQS7
DQS9 - DQS16
(SSTL)
Active
High
VDD, VSS
Supply
-
SDA
-
SCL
-
REV 1.1
08/2002
Supply
DRAMs.
Data strobes: Output with read data, input with write data. Edge aligned with read data,
centered on write data. Used to capture write data.
Power and ground for the DDR SDRAM input buffers and core logic
SA0 – SA2
V DDSPD
Data and Check Bit input/output pins operate in the same manner as on conventional
Address inputs. Connected to either VDD or VSS on the system board to configure the
Serial Presence Detect EEPROM address.
This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V DD to act as a pullup.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V DD to act as a pullup.
Serial EEPROM positive power supply.
3
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Functional Block Diagram (1 Bank, 32Mx8 DDR SDRAMs)
S0
DQS0
DQS9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS4
DQS13
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D0
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D1
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D2
DQS3
DQS12
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D3
RAS
RAS : SDRAMs D0-D7
CAS
CAS : SDRAMs D0-D7
CKE0
CKE : SDRAMs D0-D7
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
D6
DQS
D7
* Wire per Clock Loading Table/
Wiring Diagrams
WE : SDRAMs D0-D7
VDDSPD
VDD/VDDQ
VREF
VSS
VDDID
Serial PD
08/2002
CS
D5
* Clock Wiring
Clock Input
SDRAMs
*CK0/CK0
2 SDRAMs
*CK1/CK1
3 SDRAMs
*CK2/CK2
3 SDRAMs
A0-A13 : SDRAMs D0-D7
WE
REV 1.1
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
DQS
BA0-BA1 : SDRAMs D0-D7
A0-A13
Notes :
1.
2.
3.
4.
CS
D4
DQS7
DQS16
BA0-BA1
SCL
WP
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
DQS
DQS6
DQS15
DQS2
DQS11
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
CS
DQS5
DQS14
DQS1
DQS10
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
A0
A1
A2
SA0
SA1
SA2
SDA
SPD
D0-D7
D0-D7
D0-D7
Strap: see Note 4
DQ-to-I/O wiring is shown as recommended but may be changed.
DQ/DQS/DM/CKE/S relationships must be maintained as shown.
DQ, DQS, DM/DQS resistors: 22 Ohms.
VDDID strap connections (for memory device VDD, VDDQ):
STRAP OUT (OPEN): VDD = VDDQ
STRAP IN (VSS): VDD is not equal to VDDQ.
4
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Serial Presence Detect -- Part 1 of 2
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 2.5V DDR SDRAMs with SPD
SPD Entry Value
Byte
Description
DDR266A DDR266B
-7K
0
-75B
Number of Serial PD Bytes Written during
Production
1
Total Number of Bytes in Serial PD device
2
Fundamental Memory Type
3
Serial PD Data Entry (Hexadecimal) Note
DDR200
-8B
DDR266A DDR266B
-7K
-75B
128
80
256
08
SDRAM DDR
07
Number of Row Addresses on Assembly
13
0D
4
Number of Column Addresses on Assembly
10
0A
5
Number of DIMM Bank
1
01
6
Data Width of Assembly
X64
40
X64
00
SSTL 2.5V
04
7
Data Width of Assembly (cont’)
8
Voltage Interface Level of this Assembly
9
10
DDR SDRAM Device Cycle Time at CL=2.5
DDR SDRAM Device Access Time from
Clock at CL=2.5
11
DIMM Configuration Type
12
Refresh Rate/Type
7.5ns
8ns
70
75
80
0.75ns
0.75ns
0.8ns
75
75
80
Non-Parity
00
SR/1x(7.8µs)
82
Primary DDR SDRAM Width
X8
08
14
Error Checking DDR SDRAM Device Width
N/A
00
1 Clock
01
2,4,8
0E
4
04
16
17
18
DDR SDRAM Device Attr: Min CLk Delay,
Random Col Access
DDR SDRAM Device Attributes:
Burst Length Supported
DDR SDRAM Device Attributes: Number of
Device Banks
DDR SDRAM Device Attributes: CAS
Latencies Supported
2/2.5
2/2.5
2/2.5
0C
0C
19
DDR SDRAM Device Attributes: CS Latency
0
01
20
DDR SDRAM Device Attributes: WE Latency
1
02
Differential Clock
20
21
DDR SDRAM Device Attributes:
22
DDR SDRAM Device Attributes: General
23
Minimum Clock Cycle at CL=2
24
25
26
27
28
Maximum Data Access Time from Clock at
CL=2
+/-0.2V Voltage Tolerance
10ns
75
A0
A0
0.75ns
0.75ns
0.8ns
75
75
80
CL=1
(tRRD)
00
10ns
Minimum Clock Cycle Time at CL=1
Minimum Row Precharge Time (tRP)
0C
7.5ns
Maximum Data Access Time from Clock at
Minimum Row Active to Row Active delay
-8B
7ns
13
15
DDR200
N/A
00
N/A
00
20ns
20ns
20ns
50
50
50
15ns
15ns
15ns
3C
3C
3C
29
Minimum RAS to CAS delay (tRCD)
20ns
20ns
20ns
50
50
50
30
Minimum RAS Pulse Width (tRAS)
45ns
45ns
50ns
2D
2D
32
31
Module Bank Density
32
33
Address and Command Setup Time Before
Clock
Address and Command Hold Time After
Clock
256MB
40
0.9ns
0.9ns
1.1ns
90
90
B0
0.9ns
0.9ns
1.1ns
90
90
B0
34
Data Input Setup Time Before Clock
0.5ns
0.5ns
0.6ns
50
50
60
35
Data Input Hold Time After Clock
0.5ns
0.5ns
0.6ns
50
50
60
Initial
00
00
00
8F
BF
45
36-61
Reserved
62
SPD Revision
63
Checksum Data
REV 1.1
08/2002
Undefined
Initial
Initial
00
5
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Serial Presence Detect -- Part 2 of 2
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 2.5V DDR SDRAMs with SPD
SPD Entry Value
Byte
Description
DDR266A DDR266B
-7K
64-71
Manufacturer’s JEDEC ID Code
72
Module Manufacturing Location
73-90
Module Part number
91-92
Module Revision Code
93-94
Module Manufacturing Data
95-98
Module Serial Number
99-255 Reserved
-75B
DDR266A DDR266B
-7K
N/A
00
00
00
Year/Week Code
yy/ww
Serial Number
00
Undefined
00
ww= Binary coded decimal year code, 01-52(Decimal), 01-34(Hex)
Note
-8B
00
N/A
N/A
2.
DDR200
-75B
7F7F7F0B00000000
N/A
N/A
yy= Binary coded decimal year code, 0-99(Decimal), 00-63(Hex)
08/2002
-8B
0B
1.
REV 1.1
Serial PD Data Entry (Hexadecimal)
DDR200
00
1, 2
6
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Absolute Maximum Ratings
Symbol
VIN, VOUT
Voltage on I/O pins relative to Vss
Rating
Units
-0.5 to VDDQ+0.5
V
VIN
Voltage on Input relative to Vss
-0.5 to +3.6
V
VDD
Voltage on VDD supply relative to Vss
-0.5 to +3.6
V
Voltage on VDDQ supply relative to Vss
-0.5 to +3.6
V
0 to+70
°C
VDDQ
TA
TSTG
PD
IOUT
Note:
Parameter
Operating Temperature (Ambient)
Storage Temperature (Plastic)
-55 to +150
°C
Power Dissipation
8
W
Short Circuit Output Current
50
mA
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Capacitance
Symbol
Max.
Units
Notes
Input Capacitance: CK0, CK0, CK1, CK1, CK2, CK2
CI1
12
pF
1
Input Capacitance: A0-A11, BA0, BA1, WE, RAS, CAS, CKE0, S0
CI2
30
pF
1
Input Capacitance: SA0-SA2, SCL
CI4
9
pF
1
CIO1
7
pF
1, 2
Parameter
Input/Output Capacitance DQ0-63; DQS0-7, 9-16
Input/Output Capacitance: SDA
CIO3
11
pF
1. VDDQ = VDD = 2.5V ± 0.2V, f = 100 MHz, TA = 25 °C, VOUT (DC) = VDDQ/2, VOUT (Peak to Peak) = 0.2V.
2. DQS inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at
the board level.
REV 1.1
08/2002
7
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
DC Electrical Characteristics and Operating Conditions
(TA = 0 °C ~ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics)
Symbol
Min
Max
Units
Notes
Supply Voltage
2.3
2.7
V
1
I/O Supply Voltage
2.3
2.7
V
1
0
0
V
I/O Reference Voltage
0.49 x VDDQ
0.51 x VDDQ
V
1, 2
I/O Termination Voltage (System)
VREF – 0.04
VREF + 0.04
V
1, 3
VIH (DC)
Input High (Logic1) Voltage
VREF + 0.15
VDDQ + 0.3
V
1
VIL (DC)
Input Low (Logic0) Voltage
-0.3
VREF- 0.15
V
1
VIN (DC)
Input Voltage Level, CK and CK Inputs
-0.3
VDDQ + 0.3
V
1
VID (DC)
Input Differential Voltage, CK and CK Inputs
0.30
V DDQ + 0.6
V
1, 4
-5
5
uA
1
-5
5
uA
1
-16.8
-
mA
1
16.8
-
mA
1
VDD
VDDQ
VSS, VSSQ
VREF
VTT
II
IOZ
IOH
IOL
Parameter
Supply Voltage, I/O Supply Voltage
Input Leakage Current
Any input 0V ≤ VIN ≤ VDD; (All other pins not under test = 0V)
Output Leakage Current
(DQs are disabled; 0V ≤ Vout ≤ VDDQ
Output High Current
(VOUT = VDDQ -0.373V, min VREF, min VTT)
Output Low Current
(VOUT = 0.373, max VREF, max VTT)
1. Inputs are not recognized as valid until V REF stabilizes.
2. VREF is expected to be equal to 0.5 V DDQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak
noise on VREF may not exceed 2% of the DC value.
3. VTT is not applied directly to the DIMM. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF,
and must track variations in the DC level of V REF .
4. VID is the magnitude of the difference between the input level on CK and the input level on CK.
REV 1.1
08/2002
8
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
AC Characteristics
(Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating
Conditions, Operating, Standby, and Refresh Currents, and Electrical Characteristics and AC Timing.)
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply voltage levels, but
the related specifications and device operation are guaranteed for the full voltage range specified.
3. Outputs measured with equivalent load. Refer to the AC Output Load Circuit below.
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or
to the crossing point for CK, CK), and parameter specifications are guaranteed for the specified AC input levels under normal use
conditions. The minimum slew rate for the input signals is 1V/ns in the range between VIL (AC) and VIH (AC) unless otherwise specified.
5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver effectively switches as a result of the
signal crossing the AC input level, and remains in that state as long as the signal does not ring back above (below) the DC input LOW
(HIGH) level.
AC Output Load Circuits
VTT
50 ohms
Output
Timing Reference Point
VOUT
30 pF
AC Operating Conditions
(TA = 0 °C ~ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics)
Symbol
Parameter/Condition
Min
VIH (AC)
Input High (Logic 1) Voltage.
VIL (AC)
Input Low (Logic 0) Voltage.
VID (AC)
Input Differential Voltage, CK and CK Inputs
VIX (AC)
Input Differential Pair Cross Point Voltage, CK and CK Inputs
Max
Unit
Notes
V
1, 2
V REF - 0.31
V
1, 2
0.62
V DDQ + 0.6
V
1-3
(0.5*VDDQ) - 0.2
(0.5*VDDQ) + 0.2
V
1, 2, 4
V REF + 0.31
1. Input slew rate = 1V/ ns.
2. Inputs are not recognized as valid until VREF stabilizes.
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.
REV 1.1
08/2002
9
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Operating, Standby, and Refresh Currents
(TA = 0 °C ~ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics)
Symbol
Parameter/Condition
PC1600
PC2100
Unit
Notes
600
680
mA
1, 2
880
960
mA
1, 2
200
200
mA
1, 2
240
280
mA
1, 2
200
200
mA
1, 2
400
480
mA
1, 2
1040
1320
mA
1, 2
920
1200
mA
1, 2
t RC = t RFC (MIN)
1280
1360
mA
1, 2
t RC = 7.8 µs
132
132
mA
1, 2, 4
24
24
mA
1-3
2000
2400
mA
1
Operating Current : one bank; active / precharge; tRC = tRC (MIN) ;
I DD0
tCK = tCK (MIN) ; DQ, DM, and DQS inputs changing twice per clock cycle;
address and control inputs changing once per clock cycle
Operating Current : one bank; active / read / precharge; Burst = 2;
I DD1
tRC = tRC (MIN) ; CL=2.5; tCK = tCK (MIN) ; IOUT = 0mA;
address and control inputs changing once per clock cycle
I DD2P
I DD2N
I DD3P
Precharge Power-Down Standby Current :
all banks idle; power-down mode; CKE ≤ VIL (MAX) ; tCK = tCK (MIN)
Idle Standby Current : CS ≥ VIH (MIN) ; all banks idle; CKE ≥ VIH(MIN) ;
tCK = tCK (MIN) ; address and control inputs changing once per clock cycle
Active Power-Down Standby Current : one bank active;
power-down mode; CKE ≤ VIL (MAX) ; tCK = tCK (MIN)
Active Standby Current : one bank; active / precharge; CS ≥ VIH (MIN) ;
I DD3N
CKE ≥ VIH (MIN) ; tRC = tRAS (MAX) ; tCK = tCK (MIN) ; DQ, DM, and DQS
inputs changing twice per clock cycle;
address and control inputs changing once per clock cycle
Operating Current : one bank; Burst = 2; reads; continuous burst;
I DD4R
address and control inputs changing once per clock cycle;
DQ and DQS outputs changing twice per clock cycle; CL = 2.5;
tCK = tCK (MIN) ; IOUT = 0mA
Operating Current : one bank; Burst = 2; writes; continuous burst;
I DD4W
address and control inputs changing once per clock cycle;
DQ and DQS inputs changing twice per clock cycle; CL=2.5;
tCK = tCK (MIN)
I DD5
Auto-Refresh Current :
Self-Refresh Current : CKE ≤ 0.2V
Operating Current: four bank; four bank interleaving with BL = 4, address
and control inputs randomly changing; 50% of data changing at every
I DD7
transfer; tRC = tRC (min); IOUT = 0mA.
1. I DD specifications are tested after the device is properly initialized.
I DD6
2. Input slew rate = 1V/ ns.
3. Enables on-chip refresh and address counters.
4. Current at 7.8 µs is time averaged value of IDD5 at tRFC (MIN) and IDD2P over 7.8 µs.
REV 1.1
08/2002
10
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
(TA = 0 °C ~ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 1 of 2)
Symbol
-7K
Parameter
-75B
-8B
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Notes
tAC
DQ output access time from CK/CK
-0.75
+0.75
-0.75
+0.75
-0.8
+0.8
ns
1-4
tDQSCK
DQS output access time from CK/CK
-0.75
+0.75
-0.75
+0.75
-0.8
+0.8
ns
1-4
tCH
CK high-level width
0.45
0.55
0.45
0.55
0.45
0.55
tCK
1-4
tCL
CK low-level width
0.45
0.55
0.45
0.55
0.45
0.55
tCK
1-4
CL=2.5
7
12
7.5
12
8
12
ns
1-4
CL=2
7.5
12
10
12
10
12
ns
tCK
tCK
Clock cycle time
1-4
1-4,
tDH
DQ and DM input hold time
0.5
0.5
0.6
ns
tDS
DQ and DM input setup time
0.5
0.5
0.6
ns
tDIPW
DQ and DM input pulse width (each input)
1.75
ns
1-4
tHZ
Data-out high-impedance time from CK/CK
-0.75
+0.75
-0.75
+0.75
-0.8
+0.8
ns
1-5
tLZ
Data-out low-impedance time from CK/CK
-0.75
+0.75
-0.75
+0.75
-0.8
+0.8
ns
1-5
tDQSQ
tDQSQA
tHP
tQH
tDQSS
tDQSL,H
tDSS
tDSH
1.75
DQS-DQ skew (DQS & associated DQ
signals)
DQS-DQ skew (DQS & all DQ signals)
2
0.5
0.6
ns
1-4
0.5
0.5
0.6
ns
1-4
tCK
1-4
tCK
1-4
tCK
1-4
tCH
tCH
cycle; defined by clk high(tCH )
or
or
or
or clk low (tCL ) time
tCL
tCL
tCL
Write command to 1st DQS latching
transition
DQS input low (high) pulse width
(write cycle)
DQS falling edge to CK setup time
(write cycle)
DQS falling edge hold time from CK
(write cycle)
tCH
tHP -
tHP -
tHP -
0.75ns
0.75ns
1.0ns
0.75
1-4,
15, 16
0.5
Minimum half clk period for any given
Data output hold time from DQS
15, 16
1.25
0.75
1.25
0.75
1.25
0.35
0.35
0.35
tCK
1-4
0.2
0.2
0.2
tCK
1-4
0.2
0.2
0.2
tCK
1-4
tMRD
Mode register set command cycle time
14
15
16
ns
1-4
tWPRES
Write preamble setup time
0
0
0
ns
1-4, 7
tCK
1-4, 6
tWPST
Write postamble
0.40
tWPRE
Write preamble
0.25
tIH
tIS
tIH
tIS
REV 1.1
08/2002
Address and control input hold time
(fast slew rate)
Address and control input setup time
(fast slew rate)
Address and control input hold time
(slow slew rate)
Address and control input setup time
(slow slew rate)
0.60
0.40
0.25
0.9
1.1
0.60
0.40
0.25
1.1
0.60
tCK
ns
0.9
1.1
1.1
ns
1.0
1.1
1.1
ns
1-4
2-4, 9,
11, 12
2-4, 9,
11, 12
2-4,
10-12,
14
2-4,
1.0
1.0
1.1
ns
10-12,
14
11
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
(TA = 0 °C ~ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
Symbol
Parameter
-7K
Min.
-75B
Max.
Min.
-8B
Max.
Min.
Notes
-
ns
2-4, 12
tIPW
Input pulse width
2.2
tRPRE
Read preamble
0.9
1.1
0.9
1.1
0.9
1.1
tCK
1-4
tRPST
Read postamble
0.40
0.60
0.40
0.60
0.40
0.60
tCK
1-4
tRAS
Active to Precharge command
45
120,000
45
120,000
50
120,000
ns
1-4
tRC
tRFC
tRCD
tRAP
tRP
tRRD
tWR
tDAL
tWTR
tXSNR
Active to Active/Auto-refresh
65
65
70
ns
1-4
75
75
80
ns
1-4
20
20
20
ns
1-4
20
20
20
ns
1-4
20
20
20
ns
1-4
15
15
15
ns
1-4
15
(tWR/
tCK )
+
15
(tWR/
tCK )
+
ns
1-4
Auto precharge write recovery +
15
(tWR/
tCK )
+
precharge time
(tRP/
(tRP /
(tRP /
tCK
1-4, 13
tCK )
tCK )
tCK )
1
1
1
tCK
1-4
75
75
80
ns
1-4
200
200
200
tCK
1-4
µs
1-4, 8
command period
Auto-refresh to Active/Auto-refresh
command period
Active to Read or Write delay
Active to Read Command with
Auto-precharge
Precharge command period
Active bank A to Active bank B
command
Write recovery time
Internal write to read command delay
Exit self-refresh to non-read
command
tXSRD
Exit self-refresh to read command
tREFI
Average Periodic Refresh Interval
REV 1.1
08/2002
2.2
Unit
Max.
7.8
7.8
7.8
12
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
AC Timing Specification Notes
1. Input slew rate = 1V/ns.
2. The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for
signals other than CK/CK is VREF.
3. Inputs are not recognized as valid until VREF stabilizes.
4. The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (Note 3) is VTT .
5. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a
specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
6. The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
7. The specific requirement is that DQS be valid (high, low, or some point on a valid transition) on or before this CK edge. A valid
transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in
progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW,
or transitioning from high to low at this time, depending on tDQSS .
8. A maximum of eight Auto refresh commands can be posted to any given DDR SDRAM device.
9. For command/address input slew rate >= 1.0 V/ns. Slew rate is measured between VOH (AC) and VOL (AC).
10. For command/address input slew rate >= 0.5 V/ns and < 1.0 V/ns. Slew rate is measured between VOH (AC) and VOL (AC).
11. CK/CK slew rates are >= 1.0 V/ns.
12. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed by
design or tester characterization.
13. For each of the terms in parentheses, if not already an integer, round to the next highest integer. t CK is equal to the actual system
clock cycle time. For example, for PC2100 at CL= 2.5, t DAL = (15ns/7.5ns) +(20ns/7.0ns) = 2 + 3 = 5.
14. An input setup and hold time derating table is used to increase t IS and t IH in the case where the input slew rate is below 0.5 V/ns.
Input Slew Rate
Delta (tIS)
Delta (tIH)
Unit
Note
0.5 V/ns
0
0
ps
1, 2
0.4 V/ns
+50
0
ps
1, 2
0.3 V/ns
+100
0
ps
1, 2
1. Input slew rate is based on the lesser of the slew rates determined by either V IH (AC) to V IL (AC) or V IH (DC) to V IL (DC), similarly
for rising transitions.
2. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.
15. An input setup and hold time derating table is used to increase t DS and t DH in the case where the I/O slew rate is below 0.5 V/ns.
Input Slew Rate
Delta (tDS)
Delta (tDH)
Unit
Note
0.5 V/ns
0
0
ps
1, 2
0.4 V/ns
+75
+75
ps
1, 2
0.3 V/ns
+150
+150
ps
1, 2
1. I/O slew rate is based on the lesser of the slew rates determined by either V IH (AC) to V IL (AC) or V IH (DC) to V IL (DC), similarly for
rising transitions.
2. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.
16. An I/O Delta Rise, Fall Derating table is used to increase t DS and t DH in the case where DQ, DM, and DQS slew rates differ.
Delta Rise and Fall Rate
Delta (tDS)
Delta (tDH)
Unit
Note
0.0 ns/V
0
0
ps
1-4
0.25 ns/V
+50
+50
ps
1-4
0.5 ns/V
+100
+100
ps
1-4
1. Input slew rate is based on the lesser of the slew rates determined by either V IH (AC) to V IL (AC) or V IH (DC) to V IL (DC), similarly
for rising transitions.
2. Input slew rate is based on the larger of AC to AC delta rise, fall rate and DC to DC delta rise, fall rate.
3. The delta rise, fall rate is calculated as: [1/(slew rate 1)] - [1/(slew rate 2)]
For example: slew rate 1 = 0.5 V/ns; slew rate 2 = 0.4 V/ns. Delta rise, fall = (1/0.5) - (1/0.4) [ns/V] = -0.5 ns/V
Using the table above, this would result in an increase in t DS and t DH of 100 ps.
4. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each
device.
REV 1.1
08/2002
13
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Package Dimensions
FRONT
133.35
5.250
17.80
0.700
31.75
1.250
10.0
0.394
(2x)4.00
0.157
128.93
5.076
Detail A
2.30
0.91
θ 2.50
0.098
Detail B
Side
BACK
3.18
0.125 MAX
Detail A
1.27+/- 0.10
0.050 +/- 0.004
3.80
0.150
4.00
0.157
Detail B
1.00 Width
0.039
6.35
0.250
1.27 Pitch
0.05
1.80
0.071
Note: All dimensions are typical with tolerances of +/- 0.15 (0.006) unless otherwise stated.
Units: Millimeters (Inches)
REV 1.1
08/2002
14
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Revision Log
Rev
Date
1.0
06/2002
Official Release
1.1
08/2002
Added tolerance specification of +/- 0.15 to Package Dimensions
REV 1.1
08/2002
Modification
15
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.