OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS(on) Fast Switching, Low Drive Current Ease of Paralleling For Added Power Small Size Available Screened to MIL-S-19500, TX, TXV, S Levels DESCRIPTION This series of hermetic surface mount product features the latest advanced MOSFET and packaging technology. They are ideally suited for Military surface mount requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS AT TC = 25°C PART NUMBER OM6034NM OM6035NM OM6036NM OM6037NM VDS 100V 200V 500V 1000V RDS(on) .065Ω .095Ω 0.4Ω 3Ω ID 35A 30A 15A 5A SCHEMATIC 3 Drain 3.5 2 Gate 1 Source 4 11 R1 Supersedes 1 05 R0 3.5 - 81 Gate-Body Leakage (OM6105) Gate-Body Leakage (OM6005) Zero Gate Voltage Drain IGSS IDSS Resistance1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State 3.5 - 82 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf 50 100 45 28 470 0.11 Ω V = 10 V, ID = 20 A TC = 125°C VGS = 10 V, ID = 20 A, GS VGS = 10 V, ID = 20 A VDS ≥ 2 VDS(on), VGS = 10 V TC = 125° C ns ns ns ns pF pF pF Resistance1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State On-State Drain Current1 Current Zero Gate Voltage Drain Gate-Body Leakage (OM6006) Gate-Body Leakage (OM6106) td(on) tr VDD = 30 V, ID ≅ 20 A Rg = 5.0 Ω, VGS = 10 V tf td(off) Crss Coss Ciss gfs Fall Time Turn-Off Delay Time Rise Time Turn-On Delay Time Reverse Transfer Capacitance Output Capacitance Input Capacitance Forward Transductance1 DYNAMIC RDS(on) RDS(on) VDS(on) ID(on) IDSS IGSS f = 1 MHz VDS = 25 V VGS = 0 D VDS = 0.8 Max. Rat., VGS = 0, VDS = Max. Rat., VGS = 0 VGS = ± 20 V S(Ω) VDS ≥ 2 VDS(on), ID = 20 A Ω V A mA mA nA IGSS VGS(th) Gate-Threshold Voltage VGS = ± 12.8 V VDS = VGS, ID = 250 µA 4.0 1.0 0.25 ± 100 ± 500 0.14 0.17 .085 .095 1.36 1.52 0.2 0.1 38 85 60 25 250 600 2400 10.0 12.5 30 2.0 200 V Reverse Recovery Time trr 400 - 2.5 - 160 - 40 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. Diode Forward Voltage1 (Body Diode) Source Current1 VSD ISM (Body Diode) Continuous Source Current ns V A A G S dlF/ds = 100 A/µs TJ = 150°C, IF = IS, TC = 25°C, IS = -40 A, VGS = 0 Junction rectifier. the integral P-N symbol showing Modified MOSPOWER Reverse Recovery Time Diode Forward Voltage1 (Body Diode) Source Current1 350 - 30 -2 - 120 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. trr VSD ISM (Body Diode) Continuous Source Current VGS = 0, = 10 V, ID = 16 A TC = 125°C VGS = 10 V, ID = 16 A, GS VGS = 10 V, ID = 16 A VDS ≥ 2 VDS(on), VGS = 10 V TC = 125° C ns ns ns ns pF pF pF ns V A A G S dlF/ds = 100 A/µs TJ = 150°C, IF = IS, TC = 25°C, IS = -30 A, VGS = 0 Junction rectifier. the integral P-N symbol showing Modified MOSPOWER Rg = 5.0 Ω, VGS = 10 V VDD = 75 V, ID ≅ 16 A f = 1 MHz VDS = 25 V VGS = 0 D VDS = 0.8 Max. Rat., VGS = 0, VDS = Max. Rat., VGS = 0 VGS = ± 20 V VGS = ± 12.8 V VDS = VGS, ID = 250 µA ID = 250 µA S(Ω) VDS ≥ 2 VDS(on), ID = 16 A Ω Ω V A mA mA nA nA V V IS Reverse Transfer Capacitance Crss 1300 2700 10 .09 V nA Voltage ID = 250 µA Min. Typ. Max. Units Test Conditions BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Output Capacitance Coss 1.3 1.0 0.25 ± 100 .055 .065 1.1 0.2 0.1 4.0 ± 500 V Drain-Source Breakdown IS Input Capacitance Ciss 9.0 35 2.0 100 BVDSS (TC = 25°C unless otherwise noted) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Forward Transductance1 gfs DYNAMIC RDS(on) RDS(on) Static Drain-Source On-State VDS(on) Voltage1 On-State Drain Current1 ID(on) Current Gate-Threshold Voltage VGS(th) IGSS Voltage VGS = 0, Min. Typ. Max. Units Test Conditions Parameter Drain-Source Breakdown (Ω) BVDSS Parameter ELECTRICAL CHARACTERISTICS: STATIC P/N OM6035NM (200V) (TC = 25°C unless otherwise noted) STATIC P/N OM6034NM (100V) (Ω) 3.5 ELECTRICAL CHARACTERISTICS: OM6034NM - OM6037NM Resistance1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State 0.4 2.8 3.5 - 83 ns ns ns ns 40 30 46 75 31 Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf Reverse Recovery Time trr 700 A V - 52 - 1.4 ns A - 13 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. Diode Forward Voltage1 (Body Diode) Source Current1 VSD ISM (Body Diode) Continuous Source Current Fall Time 25 62 55 65 150 350 2600 6.0 3.0 1.0 0.25 -100 100 4.0 Reverse Recovery Time Diode Forward Voltage1 (Body Diode) Source Current2 (Body Diode) Continuous Source Current 1100 2.5 24 6 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 1.5%. trr dlF/ds = 100 A/µs TJ = 150°C, IF = IS, ISM IS VSD G Rise Time Turn-On Delay Time 4.0 5.0 2.0 1000 ns ns ns ns pF pF pF S Ω Ω A mA mA nA nA V V GS V ns V A A = 10 V, ID = 2.5 A = 10 V, ID = 2.5 A f = 1 MHz VDS = 25 V VGS = 0 VDS = 25 VDS(on), ID = 2.5 A TC = 100°C GS V VGS = 10 V VDS > ID(on) x RDS(on)Max., TC = 125° C VDS = 0.8 x Max. Rat., VDS = Max. Rat., VGS = 0 VGS = - 20 V, VDS = 0 VGS = 20 V, VDS = 0 VDS = VGS, ID = 250 µA ID = 250 µA VGS = 0, Min. Typ. Max. Units Test Conditions G S dlF/ds = 100 A/µs IF = IS,VDD = 100 V TC = 25°C, IS = 6 A, VGS = 0 Junction rectifier. the integral P-N symbol showing Modified MOSPOWER D TC = 25° unless otherwise noted BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS tf TC = 25°C, IS = -13 A, VGS = 0 Junction rectifier. the integral P-N S tr Reverse Transfer Capacitance Output Capacitance Input Capacitance Forward Transductance1 Tr(Voff) Off-Voltage Rise Time Td(on) Coss Ciss gfs Rg = 5.0 Ω, = VGS = 10 V symbol showing Resistance1 DYNAMIC VDD = 210 V, ID ≅ 7.0 A D Resisitance1 RDS(on) Static Drain-Source On-State Crss Modified MOSPOWER On-State Drain Current Drain Current Zero Gate Voltage Gate-Body Leakage Reverse RDS(on) Static Drain-Source On-State f = 1 MHz VDS = 25 V BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS pF 280 Output Capacitance Coss Crss VGS = 0 pF TC = 125°C pF Input Capacitance Ciss IS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A, GS 2600 V VGS = 10 V, ID = 7.0 A VDS ≥ 2 VDS(on), VGS = 10 V TC = 125° C S(Ω) VDS ≥ 2 VDS(on), ID = 7.0 A Ω Ω V IDSS VDS = Max. Rat., VGS = 0 ID(on) IGSSR VGS = ± 20 V VDS = 0.8 Max. Rat., VGS = 0, IGSSF VGS = ± 12.8 V Gate-Body Leakage Forward Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 7.2 0.66 0.88 0.3 2.1 A mA Forward Transductance1 5.0 13 1.0 0.2 mA nA nA gfs DYNAMIC RDS(on) RDS(on) Static Drain-Source On-State VDS(on) Voltage1 On-State Drain Current1 ID(on) 0.25 Zero Gate Voltage Drain IDSS 0.1 ± 100 Gate-Body Leakage (OM6008) IGSS Voltage BVDSS Drain-Source Breakdown Parameter STATIC P/N OM6037NM (1000V) ELECTRICAL CHARACTERISTICS: ID = 250 µA (Ω) Current ± 500 Gate-Body Leakage (OM6108) IGSS V 2.0 4.0 V 500 VGS = 0, Min. Typ. Max. Units Test Conditions Gate-Threshold Voltage Voltage Drain-Source Breakdown (TC = 25°C unless otherwise noted) VGS(th) BVDSS Parameter STATIC P/N OM6036NM (500V) (Ω) ELECTRICAL CHARACTERISTICS: OM6034NM - OM6037NM 3.5 OM6034NM-OM6037NM ABSOLUTE MAXIMUM RATINGS: VDS (TC = 25°C unless otherwise noted) Parameter Drain-Source Voltage OM6034 100 OM6035 200 100 200 OM6036 500 OM6037 1000 Units V 1000 V VDGR Drain-Gate Voltage (RGS = 1MΩ) ID @ TC = 25°C Continuous Drain Current 30 25 11 4 A VGS Continuous Gate-Source Voltage ±20 ±20 ±20 ±20 V VGSM Gate-Source Voltage Non-Repetitive (tp ≤ 50µs) ±40 ±40 ±40 ±40 V Pulsed Drain Current1 105 60 65 17 A PD @ TC = 25°C Max. Power Dissipation 100 100 100 100 W PD @ TC = 100°C Max. Power Dissipation 35 35 35 35 W Junction to Case Linear Derating Factor1 1.0 1.0 1.0 1.0 W/°C Junction to Ambient Linear Derating Factor .025 .025 .025 .025 W/°C TJ Operating and -55 to -55 to -55 to -55 to IDM 500 Tstg Storage Temperature Range 150 150 150 150 °C Lead Temperature (At case for 5 seconds) 225 225 225 225 °C 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. THERMAL RESISTANCE (MAXIMUM) at T A = 25°C RthJC Junction-to-Case 1.0 °C/W RthJA Junction-to-Ambient 40 °C/W Free Air Operation PD - POWER DISSIPATION (WATTS) POWER DERATING PIN CONNECTION 1 180 2 150 120 Pin 1: Source Pin 2: Gate Pin 3: Drain RθJC = 1.0 C/W 90 3 60 30 0 0 25 50 75 100 125 150 175 TC - CASE TEMPERATURE (°C) MECHANICAL OUTLINE .140 .140 .140 .015 .500 .075 .075 .157 .030 MIN. 3.5 .625 .415 .062 TOP VIEW SIDE VIEW .375 BOTTOM VIEW