COM150A COM350A COM250A COM450A (COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PA C K A G E 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Standard Off-The-Shelf DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ PART NUMBER COM150A COM250A COM350A COM450A 25°C VD S 100 V 200 V 400 V 500 V S C H E M ATIC 8 09 R0 R DS(on) .070 .100 .32 .42 ID 25 A 20 A 12 A 10 A POWER RATING 3.1 - 1 3.1 Parameter B VDSS (TC = 25°C unless otherwise noted) P/N COM150A STATIC Min. Typ. Max. Units Test Conditions Drain-Source Breakdown Voltage 100 V B VD S S ID = 250 mA IGSSF Gate-Body Leakage Forward 100 nA IG S S R Gate-Body Leakage Reverse - 100 nA IDSS Zero Gate Voltage Drain 0.25 mA V D S = Max. Rat., VG S = 0 2.0 0.1 Current 0.2 On-State Drain Current1 V DS(on) Static Drain-Source On-State Static Drain-Source On-State V mA A 1.1 1.3 V 0.55 0.07 Resistance1 R DS(on) 1.0 35 Voltage1 R DS(on) 4.0 Static Drain-Source On-State 1.0 Resistance1 V D S = VG S,ID = 250 mA 200 V V G S = +20 V IGSSF Gate-Body Leakage Forward 100 nA V G S = + 20 V V G S = -20 V IG S S R Gate-Body Leakage Reverse -100 nA V G S = - 20 V ID S S Zero Gate Voltage Drain 0.1 0.25 mA V D S = Max. Rat., VG S = 0 0.2 1.0 mA Current TC = 125° C VD S 2 VDS(on),VG S = 10 V V G S = 10 V, ID = 20 A ID(on) On-State Drain Current1 V DS(on) Static Drain-Source On-State 30 1.36 1.60 Voltage1 R DS(on) Static Drain-Source On-State V G S = 10 V, ID = 20 A, R DS(on) Static Drain-Source On-State V D S = VG S,ID = 250 mA V D S = 0.8 Max. Rat., VG S = 0, TC = 125° C A VD S V V G S = 10 V, ID = 16 A 2 VDS(on),VG S = 10 V V G S = 10 V, ID = 16 A V G S = 10 V, ID = 16 A, 0.15 0.18 Resistance1 TC = 125 C DYNAMIC (W ) 3.1 - 2 DYNAMIC V .085 .100 Resistance1 TC = 125 C 4.0 ID = 250 mA Gate-Threshold Voltage V D S = 0.8 Max. Rat., VG S = 0, 2.0 V G S = 0, V GS(th) V G S = 10 V, ID = 20 A 0.12 Min. Typ. Max. Units Test Conditions Drain-Source Breakdown Voltage Gate-Threshold Voltage (TC = 25°C unless otherwise noted) P/N COM250A Parameter V G S = 0, V GS(th) ID(on) ELECTRICAL CHARACTERISTICS: (W ) STATIC gfs Forward Transductance1 gfs Forward Transductance1 C iss Input Capacitance 2700 pF VG S = 0 C iss Input Capacitance 2400 pF VG S = 0 C oss Output Capacitance 1300 pF V D S = 25 V C oss Output Capacitance 600 pF V D S = 25 V C rss Reverse Transfer Capacitance 470 pF f = 1 MHz C rss Reverse Transfer Capacitance 250 pF f = 1 MHz td(on) Turn-On Delay Time 28 ns V D D = 30 V, ID @ 20 A td(on) Turn-On Delay Time 25 ns V D D = 75 V, ID @ 16 A tr Rise Time 45 ns R g = 5.0 W ,VG = 10V tr Rise Time 60 ns R g = 5.0 W ,VG S = 10V td(off) Turn-Off Delay Time 100 ns td(off) Turn-Off Delay Time 85 ns tf Fall Time 50 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 38 ns (MOSFET switching times are essentially independent of operating temperature.) 9.0 S(W ) V D S 2 VDS(on),ID = 20 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 40 IS M A the integral P-N - 160 (Body Diode) IS Diode Forward Voltage1 tr Reverse Recovery Time - 2.5 G 400 300msec, Duty Cycle 2%. IS M A V ns Continuous Source Current 2 VDS(on),ID = 16 A Modified MOSPOWER - 30 (Body Diode) Junction rectifier. VS D 1 Pulse Test: Pulse Width D symbol showing Source Current1 S(W ) V D S BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER (Body Diode) 10.0 TC = 25 C,IS = -40 A, VG S = 0 TJ = 150 C,IF =IS, dlF/ds = 100 A/ms symbol showing Source Current1 the integral P-N - 120 (Body Diode) S G A Junction rectifier. VS D Diode Forward Voltage1 tr Reverse Recovery Time 1 Pulse Test: Pulse Width D A -2 350 300msec, Duty Cycle 2%. V ns S TC = 25 C,IS = -30 A, VG S = 0 TJ = 150 C,IF =IS, dlF/ds = 100 A/ms COM150A - COM450A 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: Parameter B VDSS (TC = 25°C unless otherwise noted) P/N COM350A STATIC Min. Typ. Max. Units Test Conditions Drain-Source Breakdown Voltage 400 V B VD S S ID = 250 mA IGSSF Gate-Body Leakage Forward 100 nA IG S S R Gate-Body Leakage Reverse - 100 nA 0.25 mA V D S = Max. Rat., VG S = 0 2.0 Zero Gate Voltage Drain 0.1 Current 0.2 ID(on) On-State Drain Current1 V DS(on) Static Drain-Source On-State Static Drain-Source On-State Resistance1 R DS(on) 1.0 15 Voltage1 R DS(on) 4.0 Static Drain-Source On-State V mA A 2.0 2.64 0.25 .32 V V D S = VG S,ID = 250 mA 500 V V G S = +20 V IGSSF Gate-Body Leakage Forward 100 nA V G S = +20 V V G S = - 20 V IG S S R Gate-Body Leakage Reverse - 100 nA V G S = - 20 V ID S S Zero Gate Voltage Drain 0.1 0.25 mA V D S = Max. Rat., VG S = 0 0.2 1.0 mA Current TC = 125° C VD S 2 VDS(on),VG S = 10 V V G S = 10 V, ID = 8.0 A ID(on) On-State Drain Current1 V DS(on) Static Drain-Source On-State 13 Voltage1 R DS(on) Static Drain-Source On-State Resistance1 V G S = 10 V, ID = 8.0 A, R DS(on) Static Drain-Source On-State 2.94 0.3 0.42 V D S = VG S,ID = 250 mA V D S = 0.8 Max. Rat., VG S = 0, TC = 125° C A VD S 2 VDS(on),VG S = 10 V V V G S = 10 V, ID = 7.0 A V G S = 10 V, ID = 7.0 A V G S = 10 V, ID = 7.0 A, TC = 125 C DYNAMIC (W ) 3.1 - 3 DYNAMIC 2.1 V 0.67 0.89 Resistance1 TC = 125 C 4.0 ID = 250 mA Gate-Threshold Voltage V D S = 0.8 Max. Rat., VG S = 0, 2.0 V G S = 0, V GS(th) V G S = 10 V, ID = 8.0 A 0.51 0.67 Resistance1 Min. Typ. Max. Units Test Conditions Drain-Source Breakdown Voltage Gate-Threshold Voltage (TC = 25°C unless otherwise noted) P/N COM450A Parameter V G S = 0, V GS(th) IDSS ELECTRICAL CHARACTERISTICS: (W ) STATIC gfs Forward Transductance1 gfs Forward Transductance1 C iss Input Capacitance 2900 pF VG S = 0 C iss Input Capacitance 2600 pF VG S = 0 C oss Output Capacitance 450 pF V D S = 25 V C oss Output Capacitance 280 pF V D S = 25 V C rss Reverse Transfer Capacitance 150 pF f = 1 MHz C rss Reverse Transfer Capacitance 40 pF f = 1 MHz td(on) Turn-On Delay Time 30 ns V D D = 200 V, ID @ 8.0 A td(on) Turn-On Delay Time 30 ns V D D = 210 V, ID @ 7.0 A 6.0 S(W ) V D S 2 VDS(on),ID = 8.0 A 6.0 S(W ) V D S 2 VDS(on),ID = 7.0 A tr Rise Time 40 ns R g =5.0 W ,VG S =10V tr Rise Time 46 ns R g = 5.0 W ,VG S = 10 V td(off) Turn-Off Delay Time 80 ns td(off) Turn-Off Delay Time 75 ns tf Fall Time 30 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 31 ns (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 15 (Body Diode) IS M D A IS the integral P-N A - 1.6 V G Junction rectifier. VS D Diode Forward Voltage1 tr Reverse Recovery Time 600 300msec, Duty Cycle ns IS M TJ = 100 C,IF =IS, dlF/ds = 100 A/ms the integral P-N - 52 A - 1.4 V G Junction rectifier. VS D Diode Forward Voltage1 tr Reverse Recovery Time 1 Pulse Test: Pulse Width D A symbol showing Source Current1 (Body Diode) S TC = 25 C,IS = -15 A, VG S = 0 2%. Modified MOSPOWER - 13 700 300msec, Duty Cycle 2%. ns S TC = 25 C,IS = -13 A, VG S = 0 TJ = 150 C,IF =IS, dlF/ds = 100 A/ms 3.1 COM150A - COM450A (Body Diode) - 60 Continuous Source Current (Body Diode) symbol showing Source Current1 1 Pulse Test: Pulse Width BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER COM150A - COM450A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter COM150A COM250A COM350A COM450A Units VD S Drain-Source Voltage 100 200 400 500 VD G R Drain-Gate Voltage (RG S = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current2 ±25 ±25 ±13 ±11 A ID @ TC = 100°C Continuous Drain Current2 ±16 ±16 ±8 ±7 A ±100 ±80 ±54 ±40 A Current1 V ID M Pulsed Drain VG S Gate-Source Voltage ± 20 ± 20 ±20 ± 20 V P D @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W P D @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C .020 .020 .020 .020 W/°C -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C 300 300 300 300 °C Junction To Ambient Linear Derating Factor TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/16" from case for 10 secs.) 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2 Package Pin Limitation = 15 Amps 2%. THERMAL RESISTA N C E R thJC Junction-to-Case 1.0 °C/W R thJA Junction-to-Ambient 50 °C/W Free Air Operation MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 3.1 .800 .790 .685 .665 1 2 .550 .530 3 .550 .510 .005 .045 .035 .150 TYP. .150 TYP. .260 .249 Pin 1: Drain Pin 2: Source Pin 3: Gate 205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246