OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV and S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PER TRANSISTOR @ 25°C PART NUMBER OMD100 OMD200 OMD400 OMD500 VDS 100V 200V 400V 500V SCHEMATIC RDS(on) .08 .11 .35 .43 ID 25A 25A 13A 11A 3.1 CONNECTION DIAGRAM FET 4 G S FET 3 D G S D .150 1.520 .500 MIN. .260 1.000 SQ. 45° REF .170 R. TYP. .156 DIA. TYP. .040 LEAD DIA. D S FET 1 4 11 R2 Supersedes 1 07 R1 3.1 - 1 G G S D FET 3 .187 TYP. .125 (10 PLCS) .625 .050 .270 (TC = 25°C unless otherwise noted) STATIC P/N OMD100 (100V) BVDSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSSF IGSSR IDSS Min. Typ. Max. Units Test Conditions 100 2.0 ID = 250 mA Drain-Source Breakdown Voltage VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSF Gate-Body Leakage Reverse - 100 nA VGS = -20 V 0.25 mA VDS = Max. Rat., VGS = 0 Zero Gate Voltage Drain On-State Drain Current1 VDS(on) Static Drain-Source On-State 0.1 0.2 1.0 35 1.1 Voltage1 Static Drain-Source On-State 1.60 mA Static Drain-Source On-State .10 Resistance1 200 V VGS = 10 V, ID = 20 A 100 nA VGS = + 20 V IGSSR Gate-Body Leakage Reverse -100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.25 mA 0.1 Current ID(on) On-State Drain Current1 VDS(on) Static Drain-Source On-State Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 TC = 125 C 0.2 1.0 30 1.36 1.76 mA VDS = VGS, ID = 250 mA VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A .085 .110 VGS = 10 V, ID = 16 A, 0.14 .200 TC = 125 C DYNAMIC (W ) 3.1 - 2 DYNAMIC ID = 250 mA Gate-Body Leakage Forward RDS(on) VGS = 10 V, ID = 20 A, VGS = 0, V Voltage1 VGS = 10 V, ID = 20 A V 2.0 TC = 125° C VDS 2 VDS(on), VGS = 10 V .160 Min. Typ. Max. Units Test Conditions 4.0 VDS = 0.8 Max. Rat., VGS = 0, A .065 .080 Resistance1 RDS(on) BVDSS V Current RDS(on) V Parameter VGS = 0, 4.0 ID(on) (TC = 25°C unless otherwise noted) (W ) Parameter ELECTRICAL CHARACTERISTICS: STATIC P/N OMD200 (200V) gfs Forward Transductance1 gfs Forward Transductance1 Ciss Input Capacitance 2700 pF VGS = 0 Ciss Input Capacitance 2400 pF VGS = 0 Coss Output Capacitance 1300 pF VDS = 25 V Coss Output Capacitance 600 pF VDS = 25 V Crss Reverse Transfer Capacitance 470 pF f = 1 MHz Crss Reverse Transfer Capacitance 250 pF f = 1 MHz td(on) Turn-On Delay Time 28 ns VDD = 30 V, ID @ 20 A td(on) Turn-On Delay Time 25 ns VDD = 75 V, ID @ 16 A 9.0 10 S(W ) VDS 2 VDS(on), ID = 20 A 10.0 12.5 S(W ) VDS 2 VDS(on), ID = 16 A tr Rise Time 45 ns Rg = 5.0 W , VG = 10V tr Rise Time 60 ns Rg = 5.0 W ,VGS = 10V td(off) Turn-Off Delay Time 100 ns td(off) Turn-Off Delay Time 85 ns tf Fall Time 50 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 38 ns (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (Body Diode) ISM Source Current1 (Body Diode) VSD Diode Forward Voltage1 trr Reverse Recovery Time - 40 A - 160 A - 2.5 400 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. V ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER D IS the integral P-N G Junction rectifier. ISM TJ = 150 C, IF = IS, Source Current1 (Body Diode) S TC = 25 C, IS = -40 A, VGS = 0 dlF/ds = 100 A/ms Continuous Source Current (Body Diode) symbol showing VSD Diode Forward Voltage1 trr Reverse Recovery Time 350 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 30 A - 120 A -2 V ns Modified MOSPOWER D symbol showing the integral P-N G Junction rectifier. S TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms OMD100 - OMD500 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) STATIC P/N OMD400 (400V) BVDSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSSF IGSSR IDSS Min. Typ. Max. Units Test Conditions 400 2.0 ID = 250 mA Drain-Source Breakdown Voltage VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSF Gate-Body Leakage Reverse - 100 nA VGS = - 20 V 0.25 mA VDS = Max. Rat., VGS = 0 Zero Gate Voltage Drain On-State Drain Current1 VDS(on) Static Drain-Source On-State 0.1 0.2 1.0 15 Voltage1 Static Drain-Source On-State Resistance1 RDS(on) BVDSS V Current RDS(on) V Parameter VGS = 0, 4.0 ID(on) (TC = 25°C unless otherwise noted) Static Drain-Source On-State 2.8 0.30 .35 .60 .70 500 2.0 VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 8.0 A 100 nA VGS = +20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.25 mA 0.1 Current ID(on) On-State Drain Current1 VDS(on) Static Drain-Source On-State RDS(on) 0.2 RDS(on) 2.1 Static Drain-Source On-State DYNAMIC 3.0 mA Static Drain-Source On-State VDS = VGS, ID = 250 mA VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A 0.35 0.43 VGS = 10 V, ID = 7.0 A, 0.66 0.88 Resistance1 TC = 125 C 1.0 13 Resistance1 VGS = 10 V, ID = 8.0 A, ID = 250 mA Gate-Body Leakage Forward Voltage1 VGS = 10 V, ID = 8.0 A VGS = 0, V TC = 125° C A V 4.0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C DYNAMIC (W ) 3.1 - 3 Resistance1 2.0 mA Min. Typ. Max. Units Test Conditions (W ) Parameter ELECTRICAL CHARACTERISTICS: STATIC P/N OMD500 (500V) gfs Forward Transductance1 gfs Forward Transductance1 Ciss Input Capacitance 2900 pF VGS = 0 Ciss Input Capacitance 2600 pF VGS = 0 Coss Output Capacitance 450 pF VDS = 25 V Coss Output Capacitance 280 pF VDS = 25 V Crss Reverse Transfer Capacitance 150 pF f = 1 MHz Crss Reverse Transfer Capacitance 40 pF f = 1 MHz td(on) Turn-On Delay Time 30 ns VDD = 200 V, ID @ 8.0 A td(on) Turn-On Delay Time 30 ns VDD = 210 V, ID @ 7.0 A 6.0 9.6 S(W ) VDS 2 VDS(on), ID = 8.0 A 6.0 7.2 S(W ) VDS 2 VDS(on), ID = 7.0 A tr Rise Time 40 ns Rg =5.0 W , VGS =10V tr Rise Time 46 ns Rg = 5.0 W , VGS = 10 V td(off) Turn-Off Delay Time 80 ns td(off) Turn-Off Delay Time 75 ns tf Fall Time 30 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 31 ns (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (Body Diode) ISM Source Current1 Diode Forward Voltage1 trr Reverse Recovery Time 600 A - 60 A - 1.6 V ns D IS the integral P-N G Junction rectifier. ISM TJ = 100 C, IF = IS, 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Source Current1 (Body Diode) S TC = 25 C, IS = -15 A, VGS = 0 dlF/ds = 100 A/ms Continuous Source Current (Body Diode) symbol showing VSD Diode Forward Voltage1 trr Reverse Recovery Time 700 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 13 A - 52 A - 1.4 V ns Modified MOSPOWER D symbol showing the integral P-N G Junction rectifier. S TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms 3.1 OMD100 - OMD500 (Body Diode) VSD - 15 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER OMD100 - OMD500 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OMD100 OMD200 OMD400 OMD500 Units 100 200 400 500 V Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current 2 ± 25 ± 25 ± 13 ± 11 A ID @ TC = 100°C Continuous Drain Current 2 ± 16 ± 16 ±.8 ±7 A IDM Pulsed Drain Current1 ± 100 ± 80 ± 54 ± 40 A VGS Gate-Source Voltage ± 20 ± 20 ± 20 ±20 V PD @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W PD @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C Junction To Ambient Linear Derating Factor .033 .033 .033 .033 W/°C VDS Drain-Source Voltage VDGR TJ Operating and Tstg Storage Temperature Range -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 300 300 -55 to 150 -55 to 150 -55 to 150 300 300 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package pin limitation = 10 Amps THERMAL RESISTANCE RthJC Junction-to-Case 1.0 °C/W RthJA Junction-to-Ambient 30 °C/W Free Air Operation POWER DERATING 3.1 PACKAGE OPTIONS MOD PAK 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 °C °C