OMY140 OMY340 OMY240 OMY440 POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFETs In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels Equivalent To IRFY 140 Series DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ 25°C PART NUMBER OMY140 OMY240 OMY340 OMY440 VDS 100V 200V 400V 500V SCHEMATIC RDS(on) .115 .21 .58 .88 ID(MAX) 14A 14A 10A 7A CONNECTION DIAGRAM 1. GATE 2. DRAIN 3. SOURCE 1 2 3 4 11 R2 Supersedes 1 07 R1 3.1 - 5 3.1 TC = 25° unless otherwise noted STATIC P/N OMY140 ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OMY240 Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 100 BVDSS Drain-Source Breakdown 200 V Voltage ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IGSSR Gate-Body Leakage Reverse -100 IDSS VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C On-State Drain Current1 14 VDS(on) Static Drain-Source On-State 1.40 1.73 TC = 125° C On-State Drain Current1 A VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 15 A VDS(on) Static Drain-Source On-State VGS = 10 V, ID = 15 A RDS(on) Static Drain-Source On-State Voltage1 14 1.8 2.1 A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 10 A Voltage1 RDS(on) Static Drain-Source On-State .115 Resistance1 0.21 VGS = 10 V, ID = 10 A 0.40 VGS = 10 V, ID = 10 A, Resistance1 RDS(on) Static Drain-Source On-State .20 VGS = 10 V, ID = 15 A, RDS(on) Static Drain-Source On-State Resistance1 TC = 125 C DYNAMIC TC = 125 C DYNAMIC (W ) 3.1 - 6 Resistance1 gfs Forward Transductance1 Ciss Input Capacitance 1275 pF Coss Output Capacitance 550 Crss Reverse Transfer Capacitance Td(on) tr (W ) ID(on) gfs Forward Transductance1 VGS = 0 Ciss Input Capacitance 1000 pF pF VDS = 25 V Coss Output Capacitance 250 pF VDS = 25 V 160 pF f = 1 MHz Crss Reverse Transfer Capacitance 100 pF f = 1 MHz Turn-On Delay Time 16 ns VDD = 30 V, ID @5 A Td(on) Turn-On Delay Time 17 ns VDD =75 V, ID @ 18 A Rise Time 19 ns Rg = 5 W , VGS =10 V tr Rise Time 52 ns Rg =5 W , VGS= 10 V Td(off) Turn-Off Delay Time 42 ns Td(off) Turn-Off Delay Time 36 ns tf Fall Time 24 ns (MOSFET) switching times are essentially independent of operating temperature. tf Fall Time 30 ns (MOSFET) switching times are essentially independent of operating temperature. 10 S(W ) VDS 2 VDS(on), ID = 15 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 27 A (Body Diode) ISM Diode Forward Voltage1 trr Reverse Recovery Time D IS Continuous Source Current G the integral P-N - 2.0 V TC = 25 C, IS = -24 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time Junction rectifier. ISM A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G - 72 A the integral P-N -1.5 V TC = 25 C, IS = -18 A, VGS = 0 (Body Diode) S dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing Source Current1 A 200 - 18 (Body Diode) - 108 (Body Diode) VSD S(W ) VDS 2 VDS(on), ID = 10 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current1 6.0 Junction rectifier. 350 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms S OMY140 - OMY440 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OMY340 ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OMY440 Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 400 BVDSS Drain-Source Breakdown 500 V Voltage ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IGSSR Gate-Body Leakage Reverse -100 IDSS VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C On-State Drain Current1 10 VDS(on) Static Drain-Source On-State 2.5 2.9 TC = 125° C On-State Drain Current1 A VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 5 A VDS(on) Static Drain-Source On-State Voltage1 4.5 3.2 3.52 A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 4 A Voltage1 RDS(on) Static Drain-Source On-State 0.58 VGS = 10 V, ID = 5 A RDS(on) Static Drain-Source On-State Resistance1 0.88 VGS = 10 V, ID = 4 A 1.76 VGS = 10 V, ID = 4 A, Resistance1 RDS(on) Static Drain-Source On-State 1.16 VGS = 10 V, ID = 5 A, Resistance1 RDS(on) Static Drain-Source On-State Resistance1 DYNAMIC TC = 125 C DYNAMIC (W ) 3.1 - 7 TC = 125 C gfs Forward Transductance1 Ciss Input Capacitance 1150 pF Coss Output Capacitance 165 Crss Reverse Transfer Capacitance Td(on) tr (W ) ID(on) gfs Forward Transductance1 VGS = 0 Ciss Input Capacitance 1225 pF pF VDS = 25 V Coss Output Capacitance 200 pF VDS = 25 V 70 pF f = 1 MHz Crss Reverse Transfer Capacitance 85 pF f = 1 MHz Turn-On Delay Time 17 ns VDD = 175 V, ID = 5 A Td(on) Turn-On Delay Time 17 ns VDD = 200 V, ID = 4 A Rise Time 12 ns Rg = 5 W , VDS =10V tr Rise Time 5 ns Rg = 5 W , VDS =10 V Td(off) Turn-Off Delay Time 45 ns Td(off) Turn-Off Delay Time 42 ns tf Fall Time 30 ns tf Fall Time 14 ns (MOSFET) switching times are essentially independent of operating temperature. 4.0 4.4 S(W ) VDS 2 VDS(on), ID = 5 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 10 A (Body Diode) ISM trr Reverse Recovery Time IS Continuous Source Current G VGS = 0 A -2 V TC = 25 C, IS = -10 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time Junction rectifier. ISM dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. D G - 32 A the integral P-N -2 V TC = 25 C, IS = -18 A, VGS = 0 (Body Diode) S Modified MOSPOWER symbol showing Source Current1 the integral P-N 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. -8 (Body Diode) A 530 S(W ) VDS 2 VDS(on), ID = 4 A Junction rectifier. 700 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms S 3.1 OMY140 - OMY440 Diode Forward Voltage1 D - 40 (Body Diode) VSD 4.8 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current1 4.0 OMY140 - OMY440 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OMY140 OMY240 OMY340 OMY440 Units 100 200 400 500 V VDS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current 2 ± 14 ± 14 ± 10 ±8 A ID @ TC = 100°C Continuous Drain Current 2 ± 14 ± 11 ±6 ±5 A IDM Pulsed Drain Current ± 56 ± 56 ± 40 ± 32 A VGS Gate-Source Voltage ± 20 ± 20 ± 20 ± 20 V PD @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W PD @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C Junction To Ambient Linear Derating Factor .015 .015 .015 .015 W/°C 1 TJ Operating and Tstg Storage Temperature Range -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 300 300 1.00 °C/W 65 °C/W -55 to 150 -55 to 150 -55 to 150 300 300 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package pin limitation = 10 Amps THERMAL RESISTANCE RthJC Junction-to-Case RthJA Junction-to-Ambient POWER DERATING Free Air Operation MECHANICAL OUTLINE .200 .190 .420 .410 .045 .035 .665 .645 .150 .140 .537 .527 3.1 .430 .410 .038 MAX. .750 .500 .035 .025 .100 TYP. .005 .120 TYP. PACKAGE OPTIONS MOD PAK 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 °C °C